Si9933ADY

Vishay Siliconix

Dual P-Channel 20-V (D-S) MOSFET


  
VDS (V) rDS(on) (
) ID (A)
0.075 @ VGS = –4.5 V
3.4

–20
20 0.105 @ VGS = –3.0 V
2.9

0.115 @ VGS = –2.7 V
2.6

S1 S2

SO-8

S1 1 8 D1
G1 G2
G1 2 7 D1

S2 3 6 D2

G2 4 5 D2

Top View
D1 D1 D2 D2

P-Channel MOSFET P-Channel MOSFET

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS –20
V
Gate-Source Voltage VGS
12

TA = 25C
3.4
Continuous Drain Current (TJ = 150C)a ID
TA = 70C
2.7
A
Pulsed Drain Current IDM
16

Continuous Source Current (Diode Conduction)a IS –2.0

TA = 25C 2.0
Maximum Power Dissipationa PD W
TA = 70C 1.3

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C

    

Parameter Symbol Limit Unit

Maximum Junction-to-Ambienta RthJA 62.5 C/W

Notes
a. Surface Mounted on FR4 Board, t  10 sec.
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Parameter Symbol Test Condition Min Typa Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.8 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA

VDS = –16 V, VGS = 0 V –1

Zero Gate Voltage Drain Current IDSS mA
VDS = –10 V, VGS = 0 V, TJ = 85C –3
VDS v –5 V, VGS = –4.5 V –16
On-State Drain Currentb ID(on) A
VDS v –5 V, VGS = –2.7 V –3
VGS = –4.5 V, ID = –3.2 A 0.06 0.075
D i S
Drain-Source On-State
O S Resistance
R i b rDS(on) VGS = –3.0 V, ID = –2.0 A 0.078 0.105 W
VGS = –2.7 V, ID = –1 A 0.085 0.115
Forward Transconductanceb gfs VDS = –9 V, ID = –3.4 A 8 S
Diode Forward Voltageb VSD IS = –2.0 A, VGS = 0 V –0.7 –1.2 V

Dynamica
Total Gate Charge Qg 10 20

Gate-Source Charge Qgs VDS = –6

6 V,
V VGS = –4.5
45V V, ID = –3.2
32A 2.1 nC
C
Gate-Drain Charge Qgd 3.3
Turn-On Delay Time td(on) 16 40
Rise Time tr VDD = –6
6VV,, RL = 6 W 46 80
Turn-Off Delay Time td(off) ID ^ –1
1 A,
A VGEN = –4.5
45V V, RG = 6 W 40 70 ns
Fall Time tf 25 40
Source-Drain Reverse Recovery Time trr IF = –2.0 A, di/dt = 100 A/ms 60 100

Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

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Output Characteristics Transfer Characteristics

16 16
VGS = 5 – 3.5 V 3V TC = –55C

12 12 25C
I D – Drain Current (A)

I D – Drain Current (A)

125C
8 2.5 V 8

4 4
2V

0 0
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.20 2000

0.16
r DS(on) – On-Resistance ( Ω )

1500
VGS = 3 V
C – Capacitance (pF)

0.12 VGS = 2.7 V

1000 Ciss

0.08 VGS = 4.5 V

Coss
500
0.04 Crss

0 0
0 3 6 9 12 15 0 2 4 6 8 10

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

4.5 2.0

4.0
VDS = 6 V VGS = 4.5 V
V GS – Gate-to-Source Voltage (V)

3.5 ID = 3.2 A 1.6 ID = 3.2 A

r DS(on) – On-Resistance ( Ω )

3.0
1.2
(Normalized)

2.5

2.0
0.8
1.5

1.0 0.4
0.5

0 0
0 2 4 6 8 10 –50 0 50 100 150

Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

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Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

20 0.20

TJ = 150C
0.16

r DS(on) – On-Resistance ( Ω )
10
ID = 3.2 A
I S – Source Current (A)

TJ = 25C 0.12

0.08

0.04

1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.8 40

0.6
ID = 250 µA 30
V GS(th) Variance (V)

0.4
Power (W)

0.2 20

0.0
10
–0.2

–0.4 0
–50 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 30

TJ – Temperature (C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 62.5C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10–4 10–3 10–2 10–1 1 10 30

Square Wave Pulse Duration (sec)

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Revision: 18-Jul-08 1