Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
4800

N-Channel Reducded Qg, Fast Switching MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.020@ V GS = 10 V 9
30
0.033 @ VGS = 4.5 V 7

D D D D

SO-8

S 1 8 D

S 2 7 D
G
S 3 6 D

G 4 5 D N-Channel MOSFET

Top View

Ordering Information: Si4800

S S S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "25

Continuous Drain Current (TJ = 150_C)a, b TA = 25_C ID 9

A
Pulsed Drain Current (10 ms Pulse Width) IDM 40
Continuous Source Current (Diode Conduction)a, b IS 2.3

Maximum Power Dissipationa, b TA = 25_C PD 2.5 W

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 50
Maximum Junction to Ambient (MOSFET)a
Junction-to-Ambient RthJA _C/W
Steady State 70

Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.

1
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4800

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 1 mA

On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A

VGS = 10 V, ID = 9 A 0.020
Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 7 A 0.033
Forward Transconductancea gfs VDS = 15 V, ID = 9 A 16 S
Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.71 1.2 V

Dynamicb
Total Gate Charge Qg 8.7 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 9 A 2.25 nC
Gate-Drain Charge Qgd 4.2
Gate Resistance Rg 0.5 1.5 2.6 W
Turn-On Delay Time td(on) 11 16
Rise Time tr 8 15
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 22 30 ns
Fall Time tf 9 15
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/ms 50 80

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4800
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 5 V

32 32
4V
I D - Drain Current (A)

I D - Drain Current (A)

24 24

16 16
TC = 125_C
3V
8 8
25_C
- 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.15 1200
r DS(on) - On-Resistance ( W )

1000
0.12
C - Capacitance (pF)

Ciss
800
0.09

600
Coss
0.06
400
VGS = 4.5 V

0.03
VGS = 10 V 200
Crss

0.00 0
0 8 16 24 32 40 0 5 10 15 20 25 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

ID = 9 A 1.6 ID = 9 A
r DS(on) - On-Resistance (W)

8
1.4
(Normalized)

6
1.2

1.0
4

0.8
2
0.6

0 0.4
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

3
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4800
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.20

0.16

r DS(on) - On-Resistance ( W )
I S - Source Current (A)

10 TJ = 150_C 0.12 ID = 9 A

TJ = 25_C
0.08

0.04

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.6 30

0.4 ID = 250 mA
25
0.2
V GS(th) Variance (V)

20
Power (W)

- 0.0

- 0.2 15

- 0.4
10
- 0.6
5
- 0.8

- 1.0 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature (_C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 125_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600

Square Wave Pulse Duration (sec)