PD- 94087

IRF7241
HEXFET Power MOSFET
Trench Technology VDSS )
RDS(on) max (m) ID
Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A
P-Channel MOSFET 70@VGS = -4.5V -5.0A
Available in Tape & Reel

A
1 8
S D
Description
New trench HEXFET Power MOSFETs from S
2 7
D
International Rectifier utilize advanced processing
3 6
techniques to achieve extremely low on-resistance S D
per silicon area. This benefit, combined with the 4 5
G D
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use T o p V ie w SO-8
in battery and load management applications.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TA = 25C Continuous Drain Current, VGS @ -10V -6.2
ID @ TA= 70C Continuous Drain Current, VGS @ -10V -4.9 A
IDM Pulsed Drain Current -25
PD @TA = 25C Power Dissipation 2.5
W
PD @TA = 70C Power Dissipation 1.6
Linear Derating Factor 20 mW/C
VGS Gate-to-Source Voltage 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJL Junction-to-Drain Lead 20
RJA Junction-to-Ambient 50 C/W
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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, ID = -1mA
25 41 VGS = -10V, ID = -6.2A
RDS(on) Static Drain-to-Source On-Resistance m
45 70 VGS = -4.5V, I D = -5.0A
VGS(th) Gate Threshold Voltage -1.0 -3.0 V VDS = VGS, ID = -250A
gfs Forward Transconductance 8.9 S VDS = -10V, ID = -6.2A
-10 VDS = -32V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
-25 VDS = -32V, VGS = 0V, TJ = 70C
Gate-to-Source Forward Leakage -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage 100 VGS = 20V
Qg Total Gate Charge 53 80 ID = -6.2A
Qgs Gate-to-Source Charge 14 21 nC VDS = -32V
Qgd Gate-to-Drain ("Miller") Charge 3.9 5.9 VGS = -10V
td(on) Turn-On Delay Time 24 VDD = -20V
tr Rise Time 280 ID = -1.0A
ns
td(off) Turn-Off Delay Time 210 RG = 6.0
tf Fall Time 100 VGS = -10V
Ciss Input Capacitance 3220 VGS = 0V
Coss Output Capacitance 160 pF VDS = -25V
Crss Reverse Transfer Capacitance 190 = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-2.5
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-25
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage -1.2 V TJ = 25C, IS = -2.5A, VGS = 0V

trr Reverse Recovery Time 32 48 ns TJ = 25C, IF = -2.5A
Qrr Reverse Recovery Charge 45 68 nC di/dt = -100A/s

Notes:
Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board
max. junction temperature.

Pulse width 400s; duty cycle 2%.

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 IRF7241

1000 100 VGS

VGS
TOP -15V TOP -15V
-10V -10V
-4.5V -4.5V

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-3.7V -3.7V
-3.5V -3.5V
100 -3.3V -3.3V
-3.0V -3.0V
BOTTOM -2.7V BOTTOM -2.7V
10
10

1
1
-2.70V

0.1
-2.70V
20s PULSE WIDTH 20s PULSE WIDTH
TJ = 25 C TJ = 150 C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.0
100.00 ID = -6.2A
R DS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current ( )

10.00 T J = 150C 1.5

(Normalized)

1.00 1.0

T J = 25C
0.10 0.5

VDS = -25V
20s PULSE WIDTH VGS = -10V
0.01 0.0
2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7241

5000 20
VGS = 0V, f = 1 MHZ ID = -6.2A
Ciss = Cgs + Cgd, Cds SHORTED

-VGS , Gate-to-Source Voltage (V)

VDS = -32V
Crss = Cgd VDS = -20V
4000 16
Coss = Cds + Cgd
Ciss
C, Capacitance(pF)

3000 12

2000 8

1000 4
Coss

Crss
0 0
1 10 100 0 20 40 60 80 100
QG , Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-ISD , Reverse Drain Current (A)

-I D , Drain-to-Source Current (A)

10 10
100sec
TJ = 150 C

1msec

1 1
10msec
TJ = 25 C

Tc = 25C
Tj = 150C
V GS = 0 V Single Pulse
0.1 0.1
0.4 0.6 0.8 1.0 1.2
0 1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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8.0 RD
VDS

VGS
D.U.T.
6.0 RG
-I D , Drain Current (A)

-
+ VDD

VGS
4.0 Pulse Width 1 s
Duty Factor 0.1 %

2.0 Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
TC , Case Temperature ( C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

100
Thermal Response (Z thJA )

D = 0.50

10 0.20

0.10

0.05

P DM
0.02
1
t1
0.01
t2

SINGLE PULSE Notes:

(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7241

0.08
R DS(on) , Drain-to -Source On Resistance ( )

0.10

R DS (on) , Drain-to-Source On Resistance ( )

0.08

0.06

VGS = -4.5V
0.06

0.04
ID = -6.2A
0.04

VGS = -10V

0.02 0.02
2 6 10 14 18 0 5 10 15 20 25
-V GS, Gate -to -Source Voltage (V) -I D , Drain Current (A)

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit

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 IRF7241

3.0 100
-V GS(th) Gate threshold Voltage (V)

80

2.5
60

Power (W)
ID = -250A

40
2.0

20

1.5 0
-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000

T J , Temperature ( C ) Time (sec)

Fig 15. Typical Vgs(th) Vs. Fig 16. Typical Power Vs. Time
Junction Temperature

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IRF7241
SO-8 Package Details
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BAS IC 1.27 BAS IC
e1 .025 BAS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0 8 0 8

e1 K x 45
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOTPRINT
NOT ES:
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.

3X 1.27 [.050]
8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
INTERNAT IONAL F7101 LOT CODE
RECTIFIER
LOGO PART NUMBER

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 IRF7241
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1

1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )

8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 ) F E E D D IR E C T IO N

N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

3 3 0 .0 0
(1 2 .9 9 2 )
MAX.

1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
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