PD-94015

IRF5803
HEXFET® Power MOSFET
l Ultra Low On-Resistance VDSS Ω)
RDS(on) max (mΩ) ID
l P-Channel MOSFET -40V 112@VGS = -10V -3.4A
l Surface Mount 190@VGS = -4.5V -2.7A
l Available in Tape & Reel
l Low Gate Charge

Description
These P-channel HEXFET® Power MOSFETs from 1 6
A
D D
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
2
per silicon area. This benefit provides the designer D 5
D
with an extremely efficient device for use in battery and
load management applications. 3 4
G S

The TSOP-6 package with its customized leadframe

T op V iew TSOP-6
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.7 A
IDM Pulsed Drain Current  -27
PD @TA = 25°C Power Dissipation ƒ 2.0
W
PD @TA = 70°C Power Dissipation ƒ 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Max. Units
RθJA Maximum Junction-to-Ambientƒ 62.5 °C/W
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 112 VGS = -10V, ID = -3.4 ‚
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– ––– 190 VGS = -4.5V, ID = -2.7A ‚
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 4.0 ––– ––– S VDS = -10V, ID = -3.4A
––– ––– -10 VDS = -32V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 25 37 ID = -3.4A
Qgs Gate-to-Source Charge ––– 4.5 6.8 nC VDS = -20V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = -10V
td(on) Turn-On Delay Time ––– 43 ––– VDD = -20V ‚
tr Rise Time ––– 550 ––– ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω
tf Fall Time ––– 50 ––– VGS = -10V
Ciss Input Capacitance ––– 1110 ––– VGS = 0V
Coss Output Capacitance ––– 93 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 73 ––– ƒ = 100kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.0

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -27
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
trr Reverse Recovery Time ––– 27 40 ns TJ = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge ––– 34 50 nC di/dt = -100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by ƒ Surface mounted on 1 in square Cu board
max. junction temperature.

‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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100 100
VGS VGS
TOP -15V TOP -15V
-10V -10V
-ID, Drain-to-Source Current (A)

-ID, Drain-to-Source Current (A)

-4.5V -4.5V
-3.7V -3.7V
10 -3.5V 10 -3.5V
-3.3V -3.3V
-3.0V -3.0V
BOTTOM - 2.7V BOTTOM - 2.7V

1 1

-2.7V
0.1 0.1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
-2.7V Tj = 125°C
0.01 0.01
0.1 1 10 100 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0

ID = -3.4A
RDS(on) , Drain-to-Source On Resistance


-I D , Drain-to-Source Current (A)

TJ = 25 ° C

1.5
10

(Normalized)

TJ = 150 ° C

1.0

1
0.5

0.1
 V DS = -25V
20µs PULSE WIDTH
0.0

-
VGS = -10V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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2000 12

ID = -3.4A

VGS = 0V, f = 100 KHZ
V DS=-32V
C iss = Cgs + Cgd , Cds

-VGS , Gate-to-Source Voltage (V)

V DS=-20V
SHORTED 10
Crss = Cgd
1500
C, Capacitance(pF)

Coss = Cds + Cgd

8
Ciss

1000 6

4
500

Coss 2

Crss
0 0
1 10 100 0 5 10 15 20 25 30
- V , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
DS

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-ISD , Reverse Drain Current (A)

-ID, Drain-to-Source Current (A)


TJ = 150 ° C
10 10


TJ = 25 ° C 100µsec

1 1
1msec
TA = 25°C
TJ = 150°C 10msec

V GS = 0 V Single Pulse
0.1 0.1
0.4 0.8 1.2 1.6
-VSD ,Source-to-Drain Voltage (V) 1 10 100
-VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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3.5 RD
VDS
3.0 VGS
D.U.T.
RG
-ID , Drain Current (A)

2.5 -
+ VDD

2.0 VGS
Pulse Width ≤ 1 µs
1.5 Duty Factor ≤ 0.1 %

1.0
Fig 10a. Switching Time Test Circuit
0.5 td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
TC , Case Temperature ( ° C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05


0.02
PDM
0.01


1 SINGLE PULSE t1
(THERMAL RESPONSE)
t2

0.1
 Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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0.20 0.40

RDS ( on ) , Drain-to-Source On Resistance (Ω )

RDS(on), Drain-to -Source On Resistance Ω)
(

VGS = -4.5V
0.15 0.30

0.10 ID = -3.4A 0.20

VGS = -10V
0.05 0.10

0.00
0.00
4.0 8.0 12.0 16.0
0.0 5.0 10.0 15.0
-VGS, Gate -to -Source Voltage (V) -ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit

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30

2.8 25

ID = -250µA
20
-VGS(th) ( V )

Power (W)
2.4
15

10
2.0

1.6 0
-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000

TJ , Temperature ( °C ) Time (sec)

Fig 15. Typical Threshold Voltage Vs. Fig 16. Typical Power Vs. Time
Junction Temperature

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IRF5803
TSOP-6 Package Outline

TSOP-6 Part Marking Information

EXAMPLE: T HIS IS AN SI3443DV WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR

WORK
YEAR Y WEEK W
PART NUMBER DATE
2001 1 01 A
3A YW CODE
2002 2 02 B
2003 3 03 C
2004 4 04 D
T OP 2005 5
1996 6
1997 7
WAFER LOT 1998 8
NUMBER CODE 1999 9
XXXX 2000 0 24 X
25 Y
26 Z
BOT TOM

PART NUMBER CODE REFERENCE: WW = (27-52) IF PRECEDED BY A LET T ER

3A = SI3443DV WORK
YEAR Y WEEK W
3B = IRF5800
3C = IRF5850 2001 A 27 A
2002 B 28 B
3D = IRF5851
2003 C 29 C
3E = IRF5852 2004 D 30 D
3I = IRF5805 2005 E
3J = IRF5806 1996 F
1997 G
DAT E CODE EXAMPLES : 1998 H
1999 J
YWW = 9603 = 6C 2000 K 50 X
YWW = 9632 = FF 51 Y

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TSOP-6 Tape & Reel Information

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
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