Basic Electronics

Dr. Abbas Ahmed

03

Bipolar Junction Transistors (BJTs)

 In this session…

• In this session we will learn

– Structures of BJTs
– How it works
– DC Bias
– Small signal AC model

in comparison with MOSFETs

Learning outcomes

• At the end of this session you should be able to:

– Understand
• The structure of BJTs
• Operational principle of BJTs
• DC bias: transfer and output characteristics
• AC signal amplification: small signal equivalent circuit
Chapter 3 Bipolar Junction
Transistors (BJTs)
Structures

How it works

DC Bias

Small signal AC model

 3.1 Structures
z Like MOSFETs: three electrodes
¾ Base --- Gate
¾ Collector --- Drain
¾ Emitter --- Source
z Two pn junctions
z Can you draw the structure of a pnp BJT?
Gate: Vg Base
Source Drain Emitter Collector

n+ n+
n+ p n
p-Si

nMOSFETs npn BJTs

2
3.2 Operation principle
z How to switch on a BJT?
z Without base bias, a BJT is off because two
diodes (pn junctions) are "back-to-back". One
of them will be reversely biased.
Base
Emitter Collector

n+ p n

3
Biases
z BE junction: forward
z BC junction: reverse
Vb Vcb

Emitter Base Collector

n+ p n

4
Forward bias

z p or n: which is
anode? e
z ‘+’ applies to p
n p
¾ External field: opposite
to self-built field hole
¾ Self-built field is Self-built-in
weakened Voltage
¾ Diffusion gives a net
current

5
Forward bias

z Typical bias over a diode

in conduction?
z 0.7V I
¾ Property of Silicon
z Relation: I vs V
¾ I = A exp(V/Vt)
¾ A:
¾ Vt: depends on
temperature
V
0.7V

6
Reverse bias

z ‘+’ applies to n e
¾ External field: in the
same direction as the n p
self-built field hole
¾ Self-built field is Self-built-in
strengthened
Voltage
¾ Only a small leakage
current can flow

7
Rectifier

z Current is allowed to
flow only in one
I
direction
z Breakdown: when
reverse bias is too
high Breakdown

V
0.7V

8
Switch on a BJT
z Forward biased BE junction
¾ Electrons flow from E to B
z Reverse biased BC junction
¾ Block holes from B to C
¾ Encourage electrons from B to C
z Ie=Ib+Ic
¾ Ic>>Ib
¾ Ie ≈ Ic
z By applying a bias on B, one can control Ic: Transistor
Vb Vcb

Ib Base
Emitter Collector

n+ p n
Ie Ic

9
Output characteristics

z Similar to MOSFETs
z Amplification uses active region
Active
Ic

Increase Ib

Vce
Cut-off

10
Differences between BJTs and MOSFETs

z Both are used

MOSFETs BJTs
Control terminal Gate: insulated Base: not insulated
Conduction In a thin interfacial In bulk of silicon
channel
Driving current Small Large
Power consumption Small Large
Applications Popular for digital Popular for analogue
Vg>0
Vd Base
Emitter Collector

n+ n+
n-channel n+ p n
p-Si Ie Ic

11
3.3 DC properties and bias of BJTs
z Symbols
z Approximation: Vbe=≈0.7V
z Current gain: βdc=Ic/Ib Ib

z Typical βdc>20

Ib Ic

Vbe
MOSFET
npn BJT
0.7V Vbe

12
DC Biasing:
z Similar to MOSFETs
z Vbe must be limited by Rb or Re
Vdd

Rd Rd
R1
Vdd Vg=Vdd x R2/(R1+R2)
Vg R2

Two power supplies MOSFETs One power supply

Vcc

To limit current Rc Rc
Rb R1
Vcc To limit current
Vbb R2 Re

Two power supplies

BJTs One power supply
13
 DC Analysis: example
z Vbb=5V, Rb=100kΩ, Rc=1kΩ, β=100.
If Vc=3V is required, determine Vcc.
Solution:
Rc
Ib=(Vbb-0.7)/Rb
=(5-0.7)/100
Vc
Rb
=0.043 (mA)
Vcc
Ic= βIb=4.3 (mA)
Vcc-Vc=Ic x Rc Vbb
=4.3 x 1=4.3 (V)
Vcc=Vc+4.3=3+4.3=7.3V

14
 DC Analysis: exercise
z Vbb=5.7V, Vcc=10V, Rb=100kΩ,
Rc=1kΩ, β=100.
¾ Determine: Ib, Ic, and Vc
Rc
Solution:

Vc
Rb

Vcc

Vbb

15
 DC Analysis: exercise
z Vbb=5.7V, Vcc=10V, Rb=100kΩ,
Rc=1kΩ, β=100.
¾ Determine: Ib, Ic, and Vc
Rc
Solution:
Ib=(Vbb-0.7)/Rb
Vc
Rb
=(5.7-0.7)/100
Vcc
=0.05 (mA)
Ic= βIb=5 (mA) Vbb
Vc=Vcc-Ic x Rc
=10-5 x 1=5 (V)

15
DC Analysis: example
z Vcc=10V, R1=10kΩ, R2=2.2kΩ, Rc=5kΩ, β=100.
Ib<<I(R1)
¾ If Vc=5V is required, determine Re.

Solution: Vcc
Since Ib<<I(R1), voltage divider rule can be
used: I(R1)
Rc
Vb=VccR2/(R1+R2) R1
Vc
=10 x 2.2/(10+2.2) Vb
Ib

=1.8 (V)
Re
R2
Ic=(Vcc-Vc)/Rc
=(10-5)/5=1(mA)
Ie= Ic+Ib≈Ic=1(mA)
Re=Ve/Ie=(Vb-0.7)/Ie
= (1.8-0.7)/1=1.1 (kΩ)

16
 DC Analysis: exercise
z Vcc=10V, R1=10kΩ, R2=2.2kΩ, Re=1kΩ, Rc=3.6kΩ,
β=100. Ib<<I(R1).
¾ Determine I(R1), Ib, Vb, Ic, Vc, Ie and Ve.
Solution:

Vcc

I(R1) Vc
Rc
R1
Ic
Ib Vc
Vb
Ve
R2 Ie
Re

17
 DC Analysis: exercise
z Vcc=10V, R1=10kΩ, R2=2.2kΩ, Re=1kΩ, Rc=3.6kΩ,
β=100. Ib<<I(R1).
¾ Determine I(R1), Ib, Vb, Ic, Vc, Ie and Ve.
Solution:
Since Ib<<I(R1), voltage divider rule can be used:
Vb=VccR2/(R1+R2) Vcc

=10 x 2.2/(10+2.2)=1.8 (V)

I(R1) Vc
Ve=Vb-0.7=1.8-0.7=1.1(V) Rc
R1
Ic
Ie=Ve/Re=(Vb-0.7)/Re Ib Vc
Vb
=(1.8-0.7)/1=1.1(mA) Ve
R2 Ie
Ic= Ie-Ib≈Ie=1.1 (mA) Re
Ib=Ic/β=1.1/100=0.011(mA)
I(R1)=(Vcc-Vb)/R1=(10-1.8)/10=0.82(mA) [I(R1)>>Ib]
Vc=Vcc-Ic x Rc =10-1.1 x3.6=6.04 (V) 17
 3.4 Small signal model of BJT
z Similar to MOSFETs
z Base is not insulated from substrate

G D C B C
D
Vin Rbe
G B
Vbe
gmVbe
gmVin
S S E
E
Equivalent
Symbol Symbol Equivalent
Circuit
Circuit
MOSFETs BJT
18
Small signal model of BJT
z Current gain, β=ic/ib
¾ β=ic/ib=gmVbe/Ib=gmRbe

C B C B ib C ic
Rbe
B Rbe
Vbe
gmVbe Vbe
β ib

E
E
E
Symbol Equivalent
Circuit
BJT
19
 AC analysis
z Similar to MOSFETs
z DC voltage: contain zero AC signal
¾ Short-circuit
¾ Coupling capacitor: short circuit
¾ BJT: small signal model
Vcc
B C Vout
Vin
Rc
R1 Vco
R1 R2 Rbe Rc
Vb Vc
Vout
Vbe
Vin
R2 gmVbe
E

Small signal AC equivalent circuit

Original circuit
20
Voltage gain
z Vout= -ic x Rc = -gmVbe x Rc
z Vbe=Vin
z Voltage gain: A=Vout/Vin = -gmRc
z The same as MOSFET

Vin B C Vout
R1 R2 Rbe Rc

Vbe ic
gmVbe

E
Small signal AC equivalent circuit

21
Example
z gm=0.02S
¾ A=-20 is required. Determine Rc
Solution:
Since A =-gm x Rc, we have,
Rc = -A/gm
= -(-20)/0.02
=1000 (Ω) Vin B C Vout

R1 R2 Rbe Rc

Vbe ic
gmVbe

E
Small signal AC equivalent circuit
22
 Exercise
z Draw the equivalent small signal AC circuit
z If gm=0.02S, Rc=2000Ω, determine the gain A.

Vcc

Rc Vco
R1

Vb Vc
Vout
Vin
R2

Original circuit

23
 Exercise
z Draw the equivalent small signal AC circuit
z If gm=0.02S, Rc=2000Ω, determine the gain A.
Solution:
A =-gm x Rc =0.02 x 2000 = -40

Vcc
Vin B C Vout

R1
Rc Vco R1 R2 Rbe Rc

Vb Vc Vbe ic
Vout
Vin
gmVbe
R2

E
Small signal AC equivalent circuit
Original circuit

23
Rin and Ro for amplifier
z Should Rin be large or small?
z Should Ro be large or small?

Iin Rin Ro
Vin
Vo

Amplifier

24
Rin for BJT circuit
z Rin=R1//R2//Rbe
z Calculation
¾ R12=R1 x R2 /(R1 +R2)
¾ Rin =R12 x Rbe /(R12 +Rbe)
Vin B C Vout

R1 R2 Rbe Rc

Vbe ic
gmVbe

E
Small signal AC equivalent circuit

25
 Example
z R1=10kΩ, R2=5k Ω
¾ If Rin=1k Ω is required, determine Rbe.
Solution:
R12=R1 x R2/(R1+R2)
=10 x 5 /(10+5) Vout
Vin B C
=3.33 (kΩ)
R1 R2 Rbe Rc
Rin=RbeR12/(Rbe+R12)
Vbe ic
Rin(Rbe+R12)=RbeR12
gmVbe
RinRbe+RinR12=RbeR12
(Rin-R12)Rbe=-RinR12 E
Rbe=-RinR12/(Rin-R12) Small signal AC equivalent circuit
=-1 x 3.33/(1-3.33)
= 1.43 kΩ
26
 Exercise
z R1=5kΩ, R2=5k Ω, Rbe=0.5k Ω
¾ Determine Rin
Solution:
Vin B C Vout

R1 R2 Rbe Rc

Vbe ic
gmVbe

E
Small signal AC equivalent circuit

Note:
Rin is smaller than R1, R2 and Rbe

27
 Exercise
z R1=5kΩ, R2=5k Ω, Rbe=0.5k Ω
¾ Determine Rin
Solution:
R12=R1 x R2/(R1+R2) Vin B C Vout
=5 x 5 /(5+5) R1 R2 Rc
Rbe
=2.5 (kΩ) ic
Vbe
Rin=RbeR12/(Rbe+R12) gmVbe
=0.5 x 2.5 /(0.5+2.5)
=0.42 (kΩ) E
Small signal AC equivalent circuit

Note:
Rin is smaller than R1, R2 and Rbe

27
Ro for BJT circuit
z Vin=0, Vbe=0, gmVbe=0
z The current source=0, open circuit
z Ro=Rc
Vin B C Vout

R1 R2 Rbe Rc

Vbe ic
gmVbe

E
Small signal AC equivalent circuit

28
Summary
• BJT has three terminals:
Base, Emitter, Collector
• Three regions: Cut-off, Triode, Active (amplifier).

• Ie=Ib+Ic; Vbe≈0.7V; βdc=Ic/Ib

• Transconductance gm= DIc /DVbe =local slope, which is
dependent on the DC bias point.
 Summary
• gm is controllability of small AC output current
signal, DIc, by the small AC input voltage
Ic

signal, DVb. Since signal amplification must

be linear, the AC signal must be small Vbe
sufficiently for linear signal approximation.

• Small signal model: remove DC bias, for the

analysis of small AC signal amplification.
• Vout= -icx Rc= -gmVbex Rc
• Voltage gain: A=Vout/Vin = -gmRc
Next session

• In our next session we will be looking at

Operational Amplifiers
– Integration of transistors