EE 121B:

Principles of
Semiconductor Device Design
The Bipolar Junction Transistor
Sam Emaminejad
(Optional Materials)
 Course Overview
1. Semiconductor Properties
2. Metal-Semiconductor Contacts
3. P-N Junction
4. MOS Devices
5. Bipolar Junction Transistor
Metal-Oxide-Semiconductor (MOS)
Field-Effect Transistor (FET)

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 OUTLINE
The Bipolar Junction Transistor
• Introduction
• BJT Fundamentals
• Ideal transistor analysis
• Narrow base and narrow emitter

Reading: Pierret 10, 11.1; Hu 8.1

 Introduction
• In recent decades, the higher layout density and low-power
advantage of CMOS technology has eroded the BJT’s
dominance in integrated-circuit products.
(higher circuit density → better system performance)

• BJTs are still preferred in some integrated circuit applications

because of their high speed and superior intrinsic gain.
✓ faster circuit speed
 larger power dissipation
→ limits device density (~104 transistors/chip)
 BJT Types and Definitions
• The BJT is a 3-terminal device, with two types: PNP and NPN

VEB = VE – VB VBE = VB – VE
VCB = VC – VB VBC = VB – VC
VEC = VE – VC VCE = VC – VE
= VEB - VCB = VCB - VEB

Note: The current flow sign convention used in the Pierret textbook does not
follow IEEE convention (currents defined as positive flowing into a terminal);
nevertheless, we will use it.
R. F. Pierret, Semiconductor Device Fundamentals, p. 372
 Review: Current Flow in a
Reverse-Biased pn Junction
• In a reverse-biased pn junction, there is negligible diffusion
of majority carriers across the junction. The reverse
saturation current is due to drift of minority carriers across
the junction and depends on the rate of minority-carrier
generation close to the junction (within ~one diffusion
length of the depletion region).
 We can increase this reverse current by increasing the
rate of minority-carrier generation, e.g. by
➢optical excitation of carriers (e.g. photodiode)

➢electrical injection of minority carriers into the vicinity of

the junction…
 PNP BJT Operation (Qualitative)
A forward-biased “emitter” pn junction is used to inject minority
carriers into the vicinity of a reverse-biased “collector” pn junction.
→ The collector current is controlled via the base-emitter junction.

“Active mode”: ICn

•VEB > 0
“Emitter” “Collector”
•VCB < 0
“Base”

ICp

IC
current gain  dc 
IB
 BJT Design
• To achieve high current gain:
– The injected minority carriers should not recombine within
the quasi-neutral base region

– The emitter junction current is comprised almost entirely

of carriers injected into the base (rather than carriers
injected into the emitter)
 Base Current Components
(Active Mode of Operation)
The base current consists of majority carriers supplied for
1. Recombination of injected minority carriers in the base
2. Injection of carriers into the emitter
3. Reverse saturation current in collector junction
• Reduces | IB |
4. Recombination in the base-emitter depletion region

EMITTER BASE COLLECTOR

p-type n-type p-type

 BJT Circuit Configurations
R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.3

Output Characteristics for Common-Emitter Configuration

R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.4

 BJT Modes of Operation
R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.5

Common-emitter output characteristics

(IC vs. VCE)

Mode Emitter Junction Collector Junction

CUTOFF reverse bias reverse bias
Forward ACTIVE forward bias reverse bias*
Reverse ACTIVE reverse bias* forward bias
SATURATION forward bias forward bias
*more precisely: not strongly forward biased
 BJT Electrostatics
• Under normal operating conditions, the BJT may be viewed
electrostatically as two independent pn junctions

R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.7

Electrostatic potential, V(x)

e
Electric field, (x)

Charge density, r(x)

R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.7

 BJT Performance Parameters (PNP)

Emitter Efficiency: Base Transport Factor:

I Ep I Cp
 T 
I Ep + I En I Ep
Decrease (5) relative to (1+2) Decrease (1) relative to (2)
to increase efficiency to increase transport factor
Common-Base d.c. Current Gain:  dc   T
 Collector Current (PNP)
The collector current is comprised of
•Holes injected from emitter, which do not recombine in the base  (2)
•Reverse saturation current of collector junction  (3)
I C = α dc I E + I CB 0
where ICB0 is the collector current
which flows when IE = 0

I C = α dc (I C + I B ) + I CB 0
α dc I CB 0
IC = IB +
1 − α dc 1 − α dc • Common-Emitter d.c.
= βI B + I CE 0 Current Gain:
IC  dc
 dc  
I B 1 −  dc
 Summary: BJT Fundamentals
• Notation & conventions: IE = IB + IC
pnp BJT npn BJT

• Electrostatics:
– Under normal operating conditions, the BJT may be
viewed electrostatically as two independent pn junctions
 BJT Performance Parameters
I Ep
• Emitter efficiency 
I Ep + I En
I Cp
• Base transport factor T 
I Ep
I Cp
• Common base d.c. current gain  dc  T =
IE

IC  dc
• Common emitter d.c. current gain  dc  
I B 1 −  dc
 Notation (PNP BJT)

NE  NAE NB  NDB NC  NAC

DE  DN DB  DP DC  DN
tE  tn tB  tp tC  tn
LE  LN LB  LP LC  LN
nE0  np0 = ni2/NE pB0  pn0  ni2/NB nC0  np0  ni2/NC

R. F. Pierret, Semiconductor Device Fundamentals, Fig. 11.1

 “Game Plan” for I-V Derivation
• Solve the minority-carrier diffusion equation in each quasi-
neutral region to obtain excess minority-carrier profiles
– different set of boundary conditions for each region

• Find minority-carrier diffusion currents at depletion region edges

dnE dp B
I En = −qAD E dx" I Ep = −qAD B dx
x"= 0 x =0

dnC dp B
I Cn = qAD C dx ' I Cp = −qAD B dx
x '= 0 x =W
• Add hole & electron components together → terminal currents
Emitter Region Analysis
d 2 nE
• Diffusion equation: 0 = DE dx"2
− tnEE

• General solution: nE ( x" ) = A1e − x"/ LE + A2 e x"/ LE

• Boundary conditions: nE ( x" → ) = 0

nE ( x" = 0) = nE 0 (e qVEB / kT − 1)

• Solution: nE ( x" ) = nE 0 (e qVEB / kT − 1)e − x"/ LE

nE
I En = −qADE ddx " = qA DLEE nE 0 (e qVEB / kT − 1)
x"= 0
Collector Region Analysis
d 2 nC
• Diffusion equation: 0 = DC dx '2
− tnCC

• General solution: nC ( x' ) = A1e − x '/ LC + A2e x '/ LC

• Boundary conditions: nC ( x' → ) = 0

nC ( x' = 0) = nC 0 (e qVCB / kT − 1)

• Solution: nC ( x' ) = nC 0 (e qVCB / kT − 1)e − x '/ LC

I Cn = qADC ddxn'C = −qA DLCC nC 0 (e qVCB / kT − 1)

x '= 0
Base Region Analysis
d 2 p B
• Diffusion equation: 0 = DB
dx 2
− tpBB

• General solution: pB ( x) = A1e − x / LB + A2 e x / LB

• Boundary conditions: pB (0) = pB 0 (e qVEB / kT − 1)

pB (W ) = pB 0 (e qVCB / kT − 1)

• Solution: pB ( x ) = pB 0 (e qVEB / kT

− 1) ( e ( W − x ) / LB − e − ( W − x ) / LB
eW / LB − e −W / LB
)
+ pB 0 ( e qVCB / kT
− 1) ( e x / LB − e − x / LB
eW / LB − e −W / LB
)
Since sinh ( ) = e − e − 
2

we can write

pB ( x) = pB 0 (e qVEB / kT
− 1) ( e (W − x ) / LB − e − (W − x ) / LB
eW / LB − e −W / LB
)
+ p B 0 (e qVCB / kT
− 1) ( e x / LB − e − x / LB
eW / LB − e −W / LB
)
sinh (W − x ) LB 
pB ( x) = pB 0 (e qVEB / kT − 1)
sinh (W LB )
as

sinh  x LB 
+ pB 0 (e qVCB / kT − 1)
sinh (W LB )
 d  e − e −  e + e − 
sinh ( ) = = cosh ( )
d
  =
d d  2  2

sinh (W − x ) LB  sinh  x LB 

pB ( x) = pB 0 (e qVEB / kT − 1) + p B 0 (e qVCB / kT
− 1)
sinh ( LB )
W sinh (W LB )

dp B
I Ep = −qAD B dx
x =0

= qA DB
LB p cosh(W / LB )
B 0 sinh(W / LB ) (e qVEB / kT
− 1) − 1
sinh(W / LB )
(e qVCB / kT
)
−1

I Cp = −qADB ddxpB
x =W

= qA DB
LB p  1
B 0 sinh(W / LB ) (e qVEB / kT
− 1) −
cosh(W / LB )
sinh(W / LB )
(e qVCB / kT
−1 )
 BJT Terminal Currents
• We know:
I En = qA DE
LE nE 0 (e qVEB / kT − 1)

I Ep = qA
DB
LB
pB 0  cosh(W / L B )
sinh( W / L B )
( e qV EB / kT
− 1) − 1
sinh( W / L B )
e qVCB / kT
−1 ( )
I Cp = qA DB
LB p  1
B 0 sinh( W / LB ) (e qVEB / kT
− 1) −
cosh(W / LB )
sinh( W / LB )
(e qVCB / kT
−1 )
I Cn = −qA DC
LC nC 0 (e qVCB / kT − 1)

• Therefore:
I E = qA( DE
LE
nE 0 +
DB
LB
pB 0
cosh(W / L B )
sinh( W / L B )
)(e qV EB / kT
− 1) − ( DB
LB
)(
pB 0 sinh( W1 / LB ) e qVCB / kT − 1 )
= qA( )(e − 1) − ( nC 0 + DLBB pB 0 )(e )
−1
DB 1 qVEB / kT DC cosh(W / LB ) qVCB / kT
IC LB pB 0 sinh( W / LB ) LC sinh( W / LB )
 BJT with Narrow Base
• In practice, we make W << LB to achieve high current gain.
Then, since
sinh ( ) →  for   1
cosh( ) → 1 + 2
2 for   1

we have:

pB ( x)  pB 0 (e qVEB / kT − 1)(1 − Wx )

+ pB 0 (e qVCB / kT − 1)(Wx )

R. F. Pierret, Semiconductor Device Fundamentals, Fig. 11.2

BJT Performance Parameters
1
= ni E 2 D N W
Assumptions:
1+ E B
ni B 2 DB N E LE
• emitter junction forward
biased, collector junction
1 reverse biased
T =
1+ 1
2 ( )
W 2
LB
• W << LB
Replace LE with WE’ if WE’ << LE
1
 dc =
1+
ni E 2 D N W
E B
ni B 2 DB N E LE
+ 1
2 ( )
W 2
LB

1
 dc = ni E 2 D N W
E B
ni B 2 DB N E LE
+ 1
2 ( )
W 2
LB
 Acknowledgement
• Modern Semiconductor Devices for Integrated Circuits
by C. Hu (Prentice Hall, 2009)
• Semiconductor Device Fundamentals by R. F. Pierret
(Addison Wesley, 1996)
• Professor Tsu-Jae King Liu EE130/230A notes