‫ن ا ْلعِْلِم إِاَّل قَلِ ًيل‬ِ ‫وما أُوتِيتم‬

‫م‬
14 November 2020 1442 ‫ ربيع األول‬28

َ ُْ ََ

Introduction to Electronics

Lecture 06
Bipolar Junction Transistor (BJT)

Dr. Hesham A. Omran

Integrated Circuits Lab (ICL)
Electronics and Communications Eng. Dept.
Faculty of Engineering
Ain Shams University
 Outline
❑ The Bipolar Junction Transistor (BJT)
❑ Why Is It Different?
❑ BJT Structure
❑ BJT Simplified Operation
❑ BJT Fabrication
❑ BJT Symbols
❑ BJT Large Signal Model
❑ BJT Modes of Operation
❑ DC Analysis
❑ Graphical Analysis
❑ Discrete Circuit Biasing

06: BJT 2
 Bipolar Junction Transistor (BJT)

06: BJT 3
 Why is the Transistor Different?
❑ We are used to two-terminal electronic devices
▪ Diodes, resistors, capacitors, inductors
❑ The transistor is a three-terminal device
▪ The voltage between two terminals controls the current flowing in the third terminal
▪ Voltage controlled current source (VCCS)
❑ This feature enabled a multitude of applications that changed our life!
▪ Analog signal amplification and processing
▪ Digital logic and memory circuits

06: BJT 4
 PN Junction IV Characteristics
𝑉𝐷
❑ Forward: Exponential current passes: 𝐼𝐷 = 𝐼𝑆 𝑒 𝑉𝑇

❑ Reverse: Small current, large electric field 𝐸

VF
VR

p n p n

Electric VF
Field (E)
I S exp( )
VT

06: BJT [Razavi, 2013] 5

 BJT Structure
❑ Two coupled back-to-back pn-junctions: Base is VERY thin
❑ E: Emitter, B: Base, C: Collector
❑ EBJ: Emitter-base junction
❑ CBJ: Collector-base junction

Collector (C) C
Emitter (E)
E

n p
Base p B
Base n B
(B) (B)
n p

E C
Emitter (E) Collector (C)
06: BJT 6
 BJT Simplified Operation
❑ Two coupled back-to-back pn-junctions IC
𝑽𝑩𝑬 Collector
❑ 𝑽𝑩𝑬 → 𝐼𝐸 ≈ 𝐼𝑆 𝑒 𝑉𝑇
(C)

❑ Electrons swept by electric field (𝐸) to Collector n

VCB

Reverse
instead of Base Electric
𝑽𝑩𝑬 Field (E)
Base
▪ 𝑰𝑪 ≈ 𝐼𝐸 ≈ 𝐼𝑆 𝑒 𝑉𝑇
IB (B) p
▪ 𝐼𝐶 independent of 𝑉𝐶𝐵 (VCCS)

e-
❑ Small fraction of 𝐼𝐸 goes to base

Forward
VBE
I S exp( )
𝐼𝐶 VT
▪ 𝛽= ~ 50 − 200 ≫ 1 VBE
𝐼𝐵
n+
❑ Diff-Drif: EBJ (diffusion) → CBJ (drift) IE (E)
Emitter

06: BJT 7
 BJT Simplified Operation
𝑽𝑩𝑬
𝑰𝑪 = 𝐼𝑆 𝑒 𝑉𝑇

𝐼𝐶 𝑰𝑺 𝑽𝑽𝑩𝑬
𝐼𝐵 = = 𝒆 𝑻
𝛽 𝜷

𝑰𝑪 = 𝜷𝑰𝑩

1 𝛽+1 𝐼𝐶 𝑰𝑺 𝑽𝑽𝑩𝑬
𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 = 1 + 𝐼𝐶 = 𝐼𝐶 = = 𝒆 𝑻
𝛽 𝛽 𝛼 𝜶

𝐼𝐶 = 𝛼𝐼𝐸
𝛽
𝛼= 𝛽≫1 𝛼 <≈ 1
𝛽+1

06: BJT 8
 BJT in Active Mode
❑ Diff-Drif: EBJ and Base (diffusion) → CBJ (drift)

06: BJT [Sedra/Smith, 2015] 9

 How a BJT is Fabricated?
❑ Base is VERY thin (few nm for modern technologies)

06: BJT [Sedra/Smith, 2015] 10

 NPN vs PNP
❑ Convention: Current flows from top to bottom
▪ We draw collector at top for NPN and at bottom for PNP
IC IE
Collector Emitter
(C) (E)
n p+

Forward
VCB

Reverse
VEB VEB
Electric I S exp( )
VT
Field (E)
Base Base
IB (B) p IB (B) n

h+
e-
Forward

Reverse
VBE Electric
I S exp( )
VBE VT VBC Field (E)
n+ p
IE (E) (C)
IC
Emitter Collector
06: BJT 11
 BJT Symbol
❑ Arrow at the emitter: Current flows in the arrow direction (p to n)
❑ Current flows from top to bottom
▪ Collector at top for NPN and at bottom for PNP
❑ Active mode (VCCS): EBJ forward and CBJ reverse

Collector Emitter
VBC (C) VEB (E)
n p
Base Base
(B) p VCE
(B) n VEC

n p
VBE (E) VCB (C)
Emitter Collector

06: BJT 12
 BJT Large Signal Model
Collector (C)
Collector
VBC (C)
n
n Base
Base
(B) p VCE
p
(B)
n n
VBE (E)
Emitter
Emitter (E)

06: BJT [Razavi, 2013] 13

 BJT IV Characteristics: VCCS

06: BJT [Razavi, 2013] 14

 BJT Modes of Operation
Mode Active Saturation Cutoff Collector (C)

EBJ Forward Forward Reverse

n
CBJ Reverse Forward Reverse Base p
(B)
𝐼𝐶 n
𝑰𝑪 𝐼𝐶 = 𝛽𝐼𝐵 <𝛽 𝐼𝐶 = 0
𝐼𝐵

Emitter (E)

𝑽𝑪𝑬 𝑉𝐶𝐸 > 𝑉𝐶𝐸,𝑆𝑎𝑡 𝑉𝐶𝐸 ≈ 𝑉𝐶𝐸,𝑆𝑎𝑡

Collector
VBC (C)
n
Base
(B) p VCE
Application Analog amplifiers Digital circuits (switch)
n
VBE (E)
𝑉𝐵𝐸,𝑂𝑁 ≈ 0.7𝑉 − 0.8𝑉 Emitter
𝑉𝐶𝐸,𝑆𝑎𝑡 ≈ 0.1𝑉 − 0.3𝑉
06: BJT 15
 BJT DC Analysis
❑ How to analyze and design circuits that contain BJTs, resistors, and dc sources
❑ How to “bias” a BJT in the active mode (VCCS) to work as an amplifier

VCC

RC
VCB
IC
RB IB
n
p VCE
VBB

n
VBE IE

RE

VEE
06: BJT 16
 BJT DC Analysis
❑ In order for the BJT to work as an amplifier, first, it must be “biased” in the active mode
(VCCS)
▪ EBJ forward and CBJ reverse VCC

▪ 𝑉𝐵𝐸 ≈ 𝑉𝐵𝐸,𝑂𝑁 ≈ 0.7𝑉 − 0.8𝑉

RC
▪ 𝑉𝐶𝐸 > 𝑉𝐶𝐸,𝑠𝑎𝑡 VCB
IC
❑ The DC solution 𝑉𝐶𝐸 , 𝐼𝐶 is called the bias point n
RB IB p
▪ A.k.a.: operating (OP) point, quiescent (Q) point VBB VCE

n
VBE IE

RE

VEE

06: BJT 17
 BJT DC Analysis
❑ We have 6 unknowns: 𝐼𝐵 , 𝐼𝐶 , 𝐼𝐸 , 𝑉𝐵𝐸 , 𝑉𝐶𝐵 , 𝑉𝐶𝐸
VCC
❑ We need 6 equations!
❑ Two basic KCL and KVL equations RC
1) 𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 VCB
IC
2) 𝑉𝐶𝐸 = 𝑉𝐶𝐵 + 𝑉𝐵𝐸 RB IB
n o/p
p
❑ Two KVL equations @ i/p & o/p loops VBB VCE loop

3) 𝑉𝐵𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸 + 𝑉𝐸𝐸 n

IE
i/p VBE
4) 𝑽𝑪𝑪 = 𝑰𝑪 𝑹𝑪 + 𝑽𝑪𝑬 + 𝑰𝑬 𝑹𝑬 + 𝑽𝑬𝑬 loop RE
(LOAD LINE)
VEE

06: BJT 18
 BJT DC Analysis
❑ Two equations from BJT characteristics
VCC
▪ Assume active mode
5) 𝑉𝐵𝐸 = 𝑉𝐵𝐸,𝑂𝑁 ≈ 0.7𝑉 (i/p ccs)
RC
6) 𝐼𝐶 = 𝛽𝐼𝐵 (o/p ccs) VCB
IC
▪ Check 𝑉𝐶𝐸 > 𝑉𝐶𝐸,𝑠𝑎𝑡 ≈ 0.2𝑉 n
RB IB o/p
p
▪ Else assume saturation VBB VCE loop
5) 𝑉𝐵𝐸 = 𝑉𝐵𝐸,𝑂𝑁 ≈ 0.7𝑉 (i/p ccs) n
i/p VBE IE
6) 𝑉𝐶𝐸 ≈ 𝑉𝐶𝐸,𝑠𝑎𝑡 ≈ 0.2𝑉 (o/p ccs)
loop RE
▪ Check 𝐼𝐶 < 𝛽𝐼𝐵
▪ Else assume off
VEE
5) 𝐼𝐵 = 0 (i/p ccs)
6) 𝐼𝐶 = 0 (o/p ccs)
▪ Check 𝑉𝐵𝐸 < 𝑉𝐵𝐸,𝑂𝑁 and 𝑉𝐵𝐶 < 𝑉𝐵𝐶,𝑂𝑁
06: BJT 19
 Example 6.4
❑ Given: 𝛽 = 100
❑ Required: Find the Q-point

06: BJT [Sedra/Smith, 2015] 20

 Example 6.4

06: BJT [Sedra/Smith, 2015] 21

 Example 6.5
❑ Given: 𝛽 = 100
❑ Required: Find the Q-point

06: BJT [Sedra/Smith, 2015] 22

 Example 6.5

06: BJT [Sedra/Smith, 2015] 23

 Example 6.6
❑ Given: 𝛽 = 100
❑ Required: Find the Q-point

06: BJT [Sedra/Smith, 2015] 24

 Graphical Analysis
❑ Replace approximate BJT ccs equations with actual ccs
❑ We assumed 𝑉𝐵𝐸,𝑜𝑛 ≈ 0.7
▪ Instead, we can plot KVL @ i/p loop on BJT i/p ccs
𝑉𝐵𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸 + 𝑉𝐸𝐸
−1
𝑰𝑩 ≈ 𝑽𝑩𝑬 + 𝑉𝐸𝐸 − 𝑉𝐵𝐵
𝑅𝐵 + 𝛽 + 1 𝑅𝐸
𝑦 = 𝑚𝑥 + 𝑐
❑ We assumed ideal CS: 𝐼𝐶 = 𝛽𝐼𝐵
▪ Instead, we can plot KVL @ o/p loop (load line) on BJT o/p ccs
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 + 𝐼𝐸 𝑅𝐸 + 𝑉𝐸𝐸
−1
𝑰𝑪 ≈ 𝑽𝑪𝑬 + 𝑉𝐸𝐸 − 𝑉𝐶𝐶
𝑅𝐶 + 𝑅𝐸
𝑦 = 𝑚𝑥 + 𝑐

06: BJT 25
 Graphical Analysis

06: BJT [Sedra/Smith, 2015] 26

 Effect of Temperature and Current on 𝜷

06: BJT [Sedra/Smith, 2015] 27

 “Good” Biasing
❑ 𝐼𝑆 , 𝛽, 𝑎𝑛𝑑 𝑉𝐵𝐸,𝑜𝑛 vary with process, current, and temperature
❑ A good bias circuit should provide a robust and stable Q-point
▪ Establish a robust and stable collector current 𝐼𝐶
▪ Independent of process, voltage, and temperature (PVT)

06: BJT 28
 Discrete-Circuit Biasing
❑ Why do we need 𝑅𝐶 ? VCC

▪ Convert I to V
▪ More on this next lecture
VBB

VCC

RC
VOUT

VBB

06: BJT 29
 Discrete-Circuit Biasing
VCC
❑ Why do we need 𝑅𝐵 ?
▪ Avoid exponential dependence on VBB RC
▪ 𝑅𝐸 can do the same role VOUT

VBB

VCC

RC
VOUT
RB
VBB

06: BJT 30
 Discrete-Circuit Biasing
❑ Why do we need 𝑅1 𝑎𝑛𝑑 𝑅2 ? VCC

▪ Operate from a single supply RC

VOUT
RB
VBB

VCC

R1 RC
VOUT

R2

06: BJT 31
 Discrete-Circuit Biasing
VCC
❑ Why do we need 𝑅𝐸 ?
▪ Stabilize bias point RC
R1
(avoid 𝛽 dependence) VOUT

R2

VCC

R1 RC
VOUT

R2 RE

06: BJT 32
 Discrete-Circuit Biasing
❑ KVL @ i/p loop
𝑉𝐵𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸
𝑉𝐵𝐵 − 𝑉𝐵𝐸
𝑰𝑪 ≈
𝑅𝐵
𝑅𝐸 +
𝛽
𝑉𝐵𝐵 − 𝑉𝐵𝐸,𝑜𝑛 ± Δ𝑉𝐵𝐸
=
𝑅
𝑅𝐸 + 𝐵
𝛽
❑ For robust 𝐼𝐶
𝑅𝐵
𝑅𝐸 ≫
𝛽
𝑉𝐵𝐵 − 𝑉𝐵𝐸,𝑜𝑛 ≫ Δ𝑉𝐵𝐸

06: BJT [Sedra/Smith, 2015] 33

 Thank you!

06: BJT 34
 Saturation Current (𝑰𝑺 )
𝑽𝑩𝑬
𝑰𝑪 = 𝐼𝑆 𝑒 𝑉𝑇

𝐴𝐸 𝑞𝐷𝑛 𝑛𝑖2
𝐼𝑆 =
𝑁𝐵 𝑊𝐵
❑ 𝐴𝐸 : Cross-sectional area of emitter-base junction (EBJ)
❑ 𝑞: Electron charge
❑ 𝐷𝑛 : Diffusion constant
❑ 𝑛𝑖 : Intrinsic carrier concentration
❑ 𝑁𝐵 : Doping level of the base region
❑ 𝑊𝐵 : Width of the base region

06: BJT 35