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Lecture 14
Transistors
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EEE 1 (Essentials of Electrical and Electronics Engineering)
The Semiconductor “Family Tree”
Semiconductor
Triac
Zener
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Bipolar Junction Transistors (BJT)
• Emitter (E)
– Heavily doped
– Job is to emit or inject free electrons to the
base
• Base (B)
– Lightly doped and very thin
– It passes most of the emitter-injected
electrons on the collector
• Collector (C)
– Doping level is between the heavy doping of
emitter and light doping of the base
– It collects or gather electrons from the base
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Perspective View
Example Silicon p-n-p Bipolar Junction Transistor
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EEE 1 (Essentials of Electrical and Electronics Engineering)
p-n-p Transistor
Looks sort
of like two
diodes back
to back
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EEE 1 (Essentials of Electrical and Electronics Engineering)
p-n-p Transistor
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EEE 1 (Essentials of Electrical and Electronics Engineering)
n-p-n Transistor
Looks sort
of like two
diodes back
to back
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EEE 1 (Essentials of Electrical and Electronics Engineering)
n-p-n Transistor
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Emitter-Base Junction
• has forward V applied to the PN or NP junction
in order to allow free charges of the E to move
into B
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Collector-Base Junction
• removes charges into B
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Transistor Action
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Regions of Operation
1. Active region
* E-B junction forward biased; C-B junction
reverse biased
* largest signal gain and smallest distortion
* IC = bIB
- b(current gain) typical values : 50 to >
400
2. Saturation region
* E-B and C-B junctions forward biased
* device acts like an “ON” switch
* VCE = VCE,sat, IC = IC,sat
* further increase in IB will not increase IC
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Regions of Operation
3. Cut-off region
* E-B and C-B junctions reverse biased
* device acts like an “OFF” switch
4. Reverse-Active region
* E-B junction reversed biased; C-B junction
forward biased
* Basically the forward active region with
roles of emitter and collector reversed
* typically avoided region
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EEE 1 (Essentials of Electrical and Electronics Engineering)
p-n-p n-p-n
Ø Two of the currents and two of the voltages are independent.
If two of the currents or voltages are known, third terminal current or voltage can determined.
(VCE = - VEC )
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Formulas
true for all operating regions:
IC = bIB IE = (b+1)IB
IC = aIE a = b/(b+1)
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Notation
• VBE,FA/VBE,ON – VBE when the transistor is
forward active
• VBE,SAT – VBE when the transistor is
saturated
• VCE,SAT – VCE when the transistor is
saturated
• IC,SAT – IC when the transistor is saturated
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Basic Steps in Analyzing Transistor
Circuits
1. Assume transistor is forward active
IC = bIB and IE = (b+1)IB are applicable.
2. Take KVL at the base-emitter loop
Equation will be in terms of IB, and thus, IB can be
solved.
3. Take KVL at the collector-emitter loop
Solve for VCE and/or VO.
4. Check validity of assumption
a. If VCE > VCE,sat then assumption is valid.
b. If VCE < VCE,sat then transistor is saturated.
i. Replace VCE with VCE,sat and set B-E to on.
ii. Redo all calculations.
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Transistor Switch
Vcc = 5V
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Fixed Bias Circuit
Vcc KVL at B-E loop:
VCC = IBRB + VBE
IB = (VCC – VBE) / RB
RB IC RC
KVL at C-E loop:
IB VCC = ICRC + VCE
VCE = VCC - ICRC
Vo VO = VCE
Find Vo. IC = bIB
VO = VCC – bIBRC
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Emitter-Stabilized Bias Circuit
Vcc KVL at B-E loop:
VCC = IBRB + VBE + IERE
IE = (b+1)IB
RB IC RC IB = (VCC– VBE) / [RB+(b+1)RE]
R2
Vo
R2 RE
VTH = VCCR2 / (R1 + R2 )
RTH = R1R2 / (R1 + R2 )
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Voltage Divider Bias Circuit
Vcc
KVL at B-E loop:
IC
RC
VTH = IBRTH + VBE + IERE
IB = (VTH–VBE)/[RTH+(b+1)RE]
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EEE 1 (Essentials of Electrical and Electronics Engineering)
DC Bias with Voltage Feedback
Vcc KVL at B-E loop:
I1 VCC = I1R1 + IBRB + VBE + IERE
R1 I1 = IB + IC = (b+1)IB = IE
RB
IB = (VCC–VBE)/[RB+(b+1)(RE+R1)]
IC
IB
KVL at C-E loop:
VCC = I1R1 + VCE + IERE
Vo VCE = VCC - I1R1 - IERE
RE VO = VCE + IERE
IC = bIB
I1 = IE = (b+1)IB
Find Vo. VO = VCC – (b+1)IBR1
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Exercise 1
Vcc = 16V
470k IC 2.7k
Find IB, IC, VCE, VC,
VC
IB VB, VE
β = 90
VE
VCE,sat = 0.2V
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Exercise 2
Vcc = 12V
Ic = 2mA
RB IC RC
IB
7.6V Find RB, RC, VCE,
β = 80 VB, RE
VCE,sat = 0.2V 2.4V
RE
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Exercise 3
Vcc = 16V
1. Find IB, IC, VCE,
62k
VC, VE, VB.
IC 3.9k
IB VC 2. Determine IC,sat?
β = 80
VE
9.1k 0.68k
VCE,sat = 0.2V
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EEE 1 (Essentials of Electrical and Electronics Engineering)
Exercise 4
Vcc = 12V
VCE,sat = 0.2V
680
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EEE 1 (Essentials of Electrical and Electronics Engineering)