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Introduction to Electronics
Lecture 03
Review on Semiconductors Basics
❑ The concentration of free electrons (𝑛) is equal to the concentration of holes (𝑝)
𝑛 = 𝑝 = 𝑛𝑖
❑ To increase the concentration of free electrons (𝑛) silicon is doped with a pentavalent
(valence = 5) impurity (Ex: Phosphorus)
▪ Each dopant atom (donor) gives a free 𝑒 − and a fixed positive charge (+ve ion)
• 𝑁𝐷 : donor concentration
❑ Electrons become the majority carriers
▪ The doped silicon is n-type
𝑛𝑖2
▪ 𝑛 ≈ 𝑁𝐷 ≫ 𝑝 =
𝑁𝐷
❑ To increase the concentration of holes (𝑝) silicon is doped with a trivalent (valence = 3)
impurity (Ex: Boron)
▪ Each dopant atom (acceptor) gives a ℎ+ and a fixed negative charge (-ve ion)
• 𝑁𝐴 : acceptor concentration
❑ Holes become the majority carriers
▪ The doped silicon is p-type
𝑛𝑖2
▪ 𝑝 ≈ 𝑁𝐴 ≫ 𝑛 =
𝑁𝐴
Metal
contact
Anode P-type N-type Cathode
Anode Cathode
ID ID
IS IS
E E
++holes++ -electrons- ++holes++ -electrons-
A +++++++ ----------- K A +++++++ ----------- K
+++++++ ----------- +++++++ -----------
+++++++ ----------- +++++++ -----------
+++++++ ----------- +++++++ -----------
03: Semiconductors Basics 16
PN Junction in Forward (Fwd) Bias
❑ The applied forward voltage decreases diffusion barrier
▪ Dramatically increases diffusion current
𝑉𝐹
❑ Net current is very high = 𝐼𝐷 − 𝐼𝑆 ≈ 𝐼𝐷 = 𝐼𝑆 𝑒 𝑉𝑇
VF
ID ID
IS IS
E E
++holes++ -electrons- ++holes++ -electrons-
A +++++++ ----------- K A +++++++ ----------- K
+++++++ ----------- +++++++ -----------
+++++++ ----------- +++++++ -----------
+++++++ ----------- +++++++ -----------
03: Semiconductors Basics 17
PN Junction I-V Characteristics
𝑉 V
𝐼 = 𝐼𝑆 (𝑒 𝑉𝑇 − 1)
Anode Cathode
❑ Forward: High diffusion current exponentially I
dependent on 𝑉 = 𝑉𝐹
𝑉
𝐼 ≈ 𝐼𝑆 𝑒 𝑉𝑇
❑ Reverse: Very small drift current almost
independent of 𝑉 = −𝑉𝑅
𝐼 ≈ −𝐼𝑆
❑ Breakdown: Very high reverse current at LARGE
reverse bias voltage
03: Semiconductors Basics [MIT, OCW, 6.012 - Microelectronic Devices and Circuits - Fall 2005] 20