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Dual N-CHANNEL POWER MOSFET SSD2025

FEATURES 8 SOIC
S1 1 8 D1
G1 2 7 D1
! Lower RDS(on) S2 3 6 D2
G2 4 5 D2
! Improved Inductive Ruggedness
Top View
! Fast Switching Times
! Low Input Capacitance D1,D2 D1,D2
! Extended Safe Operating Area
! Improved High Temperature Reliability

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G1 ,G2

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Product Summary
Part Number BVDSS RDS(on) ID
S1 ,S2

SSD2025 60V 0.10Ω 3.3A

N -Channel MOSFET

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current TA=25℃ 3.3
ID A
Continuous Drain Current TA=70℃ 2.6
IDM Drain Current-Pulsed ① 10.0 A
VGS Gate-to-Source Voltage ±20 V
Total Power Dissipation ( TA=25℃ ) 2.0
PD W
( TA=70℃ ) 1.3
TJ , TSTG Operating and Junction Storage
- 55 to +150 ℃
Temperature Range

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJA Junction-to-Ambient -- 62.5 ℃/W

Rev. A1
 Dual N-CHANNEL
SSD2025 POWER MOSFET

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250μA
VGS(th) Gate Threshold Voltage 1.0 -- -- V VDS= 5V ,ID=250μA
Gate-Source Leakage , Forward -- -- 100 nA VGS=20V
IGSS
Gate-Source Leakage , Reverse -- -- -100 nA VGS=-20V
-- -- 1.0 VDS=48V
IDSS Drain-to-Source Leakage Current μA
-- -- 25 VDS=48V,TC=55℃
IDON On-State Drain-Source Current 10 -- -- A VDS=5V ,VGS=10V
Static Drain-Source -- 0.065 0.1 VGS=10V,ID=3.3A
RDS(on) Ω
On-State Resistance ② -- 0.084 0.2 VGS=4.5V,ID=2.5A
gFS Forward Transconductance ② -- 7.0 -- S VDS =15V,ID=3.3A
td(on) Turn-On Delay Time -- 16 25
tr Rise Time -- 18 30 VDD=30V,ID=1.0A,
ns
td(off) Turn-Off Delay Time -- 40 50 R0=6.0Ω,
tf Fall Time -- 23 40 ②③
Qg Total Gate Charge -- 18 30
VDS=30V,VGS=10V,
Qgs Gate-Source Charge -- 2.3 -- nC
ID=3.3A ②③
Qgd Gate-Drain (“Miller”) Charge -- 4.7 --

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
Continuous Source Current Modified MOSFET Symbol ○D

IS Showing the Integral Reverse ─││

│

(Body Diode) -- -- 1.7 A ○

│─
─┘─│
│
│
│
◀
│
│
─
─
▲

P-N Junction Rectifier

G │ ○S

VSD Diode Forward Voltage ② -- -- 1.2 V TA=25℃,IS=1.7A,VGS=0V

trr Reverse Recovery Time ② -- 70 100 ns TA=25℃,IF=1.7A,diF/dt=100A/μs

Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
 Dual N-CHANNEL
POWER MOSFET SSD2025
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
10 10

Vgs= 10,9,8,7,6,5,4V
8 8
ID , Drain Current [A]

ID , Drain Current [A]

6 6
-55 oC
25 oC
4 4
Vgs= 3V 150 oC

2 2

0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Forward Voltage

0.14 101
IDR , Reverse Drain Current [A]

0.12
Drain-Source On-Resistance
RDS(on) , [ Ω ]

0.10
VGS =4.5 V
100
0.08

150 oC
0.06
VGS = 10 V 25 oC

0.04 10-1

0.02
0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
800 10

8
VGS , Gate-Source Voltage [V]

@ Notes :
600
Capacitance [pF]

1. VGS = 0 V
2. f = 1 MHz
6
C iss
400

4 VDS = 30V
ID= 3.3A

200 C oss
2
C rss

0 0
5 10 15 20 25 30 0 4 8 12 16 20
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
 Dual N-CHANNEL
SSD2025 POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2 2.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
1.6
BVDSS , (Normalized)

RDS(on) , (Normalized)
1.1

1.2
1.0 VGS = 10 V
ID = 250 µA
ID = 3.3 A

0.8
0.9

0.4

0.8
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC] TJ , Junction Temperature [oC]

Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient

100
Thermal Response

Duty Cycle=0.5

0.2
PDM

10- 1 0.1 t1
@ Notes : t2
0.05
1. Zθ J C (t)=62.5 o C/W Max.
2. Duty Factor, D=t1 /t2
0.02
3. TJ M -TC =PD M *Zθ J C (t)
4. Surface Mounted
Single Pulse
10- 2 - 4
10 10- 3 10- 2 10- 1 100 101
t1 , Square Wave Pulse Duration [sec]
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST â MICROWIRE™ SILENT SWITCHER â UHC™
Bottomless™ FASTr™ OPTOLOGIC â SMART START™ UltraFET â
CoolFET™ FRFET™ OPTOPLANAR™ SPM™ VCX™
CROSSVOLT™ GlobalOptoisolator™ PACMAN™ STAR*POWER™
DenseTrench™ GTO™ POP™ Stealth™
DOME™ HiSeC™ Power247™ SuperSOT™-3
EcoSPARK™ I2C™ PowerTrench â SuperSOT™-6
E2CMOSTM ISOPLANAR™ QFET™ SuperSOT™-8
EnSignaTM LittleFET™ QS™ SyncFET™
FACT™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™ Quiet Series™ TruTranslation™
STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5