Si4848DY

Vishay Siliconix

N-Channel 150-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Definition
0.085 at VGS = 10 V 3.7
150 • TrenchFET® Power MOSFETs
0.095 at VGS = 6.0 V 3.5
• Compliant to RoHS Directive 2002/95/EC

SO-8

S 1 8 D

S 2 7 D
G
S 3 6 D

G 4 5 D

Top View
S
Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free)
Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 150
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 3.7 2.7
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C 3.0 2.1
Pulsed Drain Current IDM 25 A
Avalanche Current L = 0.1 mH IAS 10
Continuous Source Current (Diode Conduction)a IS 2.5 1.3
TA = 25 °C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.9 1.0
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 35 42
Maximum Junction-to-Ambienta RthJA
Steady State 68 82 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 23
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71356 www.vishay.com

S09-0870-Rev. C, 18-May-09 1
Si4848DY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 120 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 120 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A
VGS = 10 V, ID = 3.5 A 0.068 0.085
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 6.0 V, ID = 3.0 A 0.076 0.095
Forward Transconductancea gfs VDS = 15 V, ID = 5 A 15 S
a VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 17 21
Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 3.5 A 3.2 nC
Gate-Drain Charge Qgd 6.0
Gate Resistance Rg 0.5 0.85 1.8 Ω
Turn-On Delay Time td(on) 9.0 14
Rise Time tr VDD = 75 V, RL = 21 Ω 10 15
Turn-Off Delay Time td(off) ID ≅ 3.5 A, VGEN = 10 V, Rg = 6 Ω 24 35 ns
Fall Time tf 17 25
Source-Drain Reverse Recovery Time trr IF = 2.5 A, dI/dt = 100 A/µs 45 70
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

25 25

VGS = 10 V thru 6 V
20 20
I D - Drain Current (A)

I D - Drain Current (A)

15 15

10 5V 10

TC = 125 °C

5 5
25 °C
3 V, 4 V - 55 °C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 71356

2 S09-0870-Rev. C, 18-May-09
 Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15 1200

0.12 Ciss
R DS(on) - On-Resistance (Ω)

900

C - Capacitance (pF)
0.09
VGS = 6 V
600

0.06 VGS = 10 V

300
0.03 Crss
Coss

0.00 0
0 5 10 15 20 25 0 30 60 90 120 150

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

20 3.0
VDS = 75 V VGS = 10 V
ID = 3.5 A ID = 3.5 A
VGS - Gate-to-Source Voltage (V)

2.5
16
R DS(on) - On-Resistance

2.0
(Normalized)

12

1.5

8
1.0

4
0.5

0 0.0
0 6 12 18 24 30 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.25

0.20
I S - Source Current (A)

R DS(on) - On-Resistance

ID = 3.5 A
TJ = 150 °C
TJ = 25 °C
10 0.15

0.10

0.05

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 71356 www.vishay.com

S09-0870-Rev. C, 18-May-09 3
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0 60

50
0.5
ID = 250 µA
VGS(th) Variance (V)

40
0.0

Power (W)
30

- 0.5
20

- 1.0
10

- 1.5 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = R thJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71356.

www.vishay.com Document Number: 71356

4 S09-0870-Rev. C, 18-May-09
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019 1 Document Number: 91000

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Vishay:
SI4848DY-T1 SI4848DY-T1-E3 SI4848DY-E3 SI4848DY SI4848DY-T1-GE3