Si4947ADY

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Definition
0.080 at VGS = - 10 V - 3.9
- 30 • TrenchFET® Power MOSFETs
0.135 at VGS = - 4.5 V - 3.0
• Compliant to RoHS Directive 2002/95/EC

S1 S2

SO-8

S1 1 8 D1
G1 G2
G1 2 7 D1

S2 3 6 D2

G2 4 5 D2

Top View
D1 D2
Ordering Information: Si4947ADY-T1-E3 (Lead (Pb)-free)
Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TA = 25 °C - 3.9 - 3.0
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 3.1 - 2.4
A
Pulsed Drain Current IDM - 20
Continuous Source Current (Diode Conduction)a IS - 1.7 - 1.0
TA = 25 °C 2.0 1.2
Maximum Power Dissipationa PD W
TA = 70 °C 1.3 0.76
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 54 62.5
Maximum Junction-to-Ambienta RthJA
Steady State 87 105 °C/W
Maximum Junction-to-Foot Steady State RthJF 34 45
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71101 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 15 A
VGS = - 10 V, ID = - 3.9 A 0.062 0.080
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 3.0 A 0.105 0.135
Forward Transconductancea gfs VDS = - 15 V, ID = - 2.5 A 5.0 S
a VSD IS = - 1.7 A, VGS = 0 V - 0.82 - 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 5.8 8
Gate-Source Charge Qgs VDS = - 10 V, VGS = - 5 V, ID = - 3.9 A 2 nC
Gate-Drain Charge Qgd 1.9
Turn-On Delay Time td(on) 8 15
Rise Time tr VDD = - 10 V, RL = 10 Ω 9 18
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 21 40 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs 27 40
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20 20

TC = - 55 °C
VGS = 10 V thru 6 V
16 16
5V 25 °C
I D - Drain Current (A)

125 °C
I D - Drain Current (A)

12 12

8 8
4V

4 4

2V 3V
0 0
0 2 4 6 8 0 1 2 3 4 5 6 7

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 71101

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 Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30 1000

0.24 800
R DS(on) - On-Resistance (Ω)

C - Capacitance (pF)
Ciss
0.18 600

VGS = 4.5 V

0.12 400

VGS = 10 V

0.06 200 Coss

Crss
0.00 0
0 3 6 9 12 15 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8
VDS = 10 V VGS = 10 V
ID = 3.9 A ID = 3.9 A
VGS - Gate-to-Source Voltage (V)

1.6
8
RDS(on) - On-Resistance

1.4
(Normalized)

1.2

4
1.0

2
0.8

0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

30 0.40

ID = 3.9 A
TJ = 150 °C 0.32
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)

10
0.24

0.16

TJ = 25 °C
0.08

1 0.00
0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 71101 www.vishay.com

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Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8 30

0.6
24
ID = 250 µA
VGS(th) Variance (V)

0.4

Power (W)
18

0.2

12
0.0

- 0.2 6

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 87 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1

0.02 0.05

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71101.

www.vishay.com Document Number: 71101

4 S09-0870-Rev. D, 18-May-09
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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1