Si1330EDL

New Product Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
VDS (V) rDS(on) (W) ID (A)
APPLICATIONS
2.5 @ VGS = 10 V 0.25
D P-Channel Driver
60 3 @ VGS = 4.5 V 0.23 − Notebook PC
8 @ VGS = 3 V 0.05 − Servers

SOT-323
SC-70 (3-LEADS) D

G 1
Marking Code
3 G
D KD XX
YY

Lot Traceability
and Date Code
S 2
Part # Code

Top View
S
Ordering Information: Si1330EDL-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS "20

TA = 25_C 0.25 0.24

Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 0.2 0.19
A
Pulsed Drain Current IDM 1.0

Continuous Diode Current (Diode Conduction)a IS 0.26 0.23

TA = 25_C 0.31 0.28

Maximum Power Dissipationa PD W
TA = 70_C 0.20 0.18

Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 5 sec 355 400
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 380 450 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72861 www.vishay.com

S-40853—Rev. A, 03-May-04 1
 Si1330EDL
Vishay Siliconix New Product

SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter Symbol Test Conditions Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2.0 2.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1
VDS = 60 V, VGS = 0 V 1 mA
m
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V, TJ = 55_C 10
VGS = 10 V, VDS = 7.5 V 0.5
On-State Drain Currentb ID(on) VGS = 4.5 V, VDS = 10 V 0.4 A
VGS = 3 V, VDS = 10 V 0.05
VGS = 10 V, ID = 0.25 A 1.0 2.5
Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.2 A 1.4 3 W
VGS = 3 V, ID = 0.025 A 3.0 8
Forward Transconductanceb gfs VDS = 10 V, ID = 0.25 A 350 mS
Diode Forward Voltage VSD IS = 0.23 A, VGS = 0 V 0.83 1.2 V

Dynamicb
Total Gate Charge Qg 0.4 0.6
Gate-Source Charge Qgs VDS = 10 V
V, VGS = 4.5
45V 0.11 nC
ID ^ 0.25 A
Gate-Drain Charge Qgd 0.15
Gate Resistance Rg 173 W
td(on) 3.8 10
Turn On Time
Turn-On
tr VDD = 30 V, RL = 150 W 4.8 15
ID ^ 0.2
02A A, VGEN = 10V ns
td(off) Rg = 10 W 12.8 20
Turn-Off Time
tf 9.6 15

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

1.0 1.0
6V TJ = −55_C
VGS = 10, 7 V
25_C
0.8 5V 0.8
I D − Drain Current (A)

I D − Drain Current (A)

0.6 0.6
125_C

0.4 4V 0.4

0.2 0.2

3V

0.0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72861

2 S-40853—Rev. A, 03-May-04
 Si1330EDL
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Gate Charge
4.0 7

3.5 6 VDS = 10 V

V GS − Gate-to-Source Voltage (V)

ID = 250 mA
r DS(on) − On-Resistance ( W )

3.0
5
2.5
4
2.0 VGS = 4.5 V
3
1.5 VGS = 10 V
2
1.0

0.5 1

0.0 0
0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6

ID − Drain Current (mA) Qg − Total Gate Charge (nC)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

2.0 1000

VGS = 10 V @ 250 mA VGS = 0 V

1.6
rDS(on) − On-Resiistance

I S − Source Current (A)

100
(Normalized)

1.2 VGS = 4.5 V

TJ = 125_C
@ 200 mA

0.8
10 TJ = 25_C

0.4
TJ = −55_C

0.0 1
−50 −25 0 25 50 75 100 125 150 0.00 0.3 0.6 0.9 1.2 1.5
TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)

On-Resistance vs. Gate-Source Voltage Threshold Voltage Variance over Temperature

5 0.4

0.2
4
r DS(on) − On-Resistance ( W )

ID = 250 mA
V GS(th) Variance (V)

−0.0
3

−0.2

2
−0.4
ID = 200 mA
1
−0.6

0 −0.8
0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150

VGS − Gate-to-Source Voltage (V) TJ − Temperature (_C)

Document Number: 72861 www.vishay.com

S-40853—Rev. A, 03-May-04 3
 Si1330EDL
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Single Pulse Power Safe Operating Area
10
5
IDM
Limited
rDS(on) Limited
4
1

I D − Drain Current (A)

3
Power (W)

1 ms
0.1
TA = 25_C 10 ms
2 ID(on)
Limited
100 ms
0.01 TA = 25_C
1 Single Pulse 1s
dc, 10 s
BVDSS Limited
0 0.001
10−2 10−1 1 10 100 600 0.1 1 10 100
Time (sec) VDS − Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 380_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600
Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72861

4 S-40853—Rev. A, 03-May-04
 Legal Disclaimer Notice
Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1
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