Si4362DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
PRODUCT SUMMARY
Rectifier Operation
VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested
0.0045 @ VGS = 10 V 20 APPLICATIONS
30
0.0055 @ VGS = 4.5 V 19 D DC/DC Converters
D Synchronous Rectifiers

SO-8
D
S 1 8 D

S 2 7 D

S 3 6 D

G 4 5 D

G
Top View

Ordering Information: Si4362DY

Si4362DY-T1 (with Tape and Reel) S
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a

Parameter Symbol Limits Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "12
TA = 25_C 20
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 15
A
Pulsed Drain Current (10 ms Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9
TA = 25_C 3.5
Maximum Power Dissipationa PD W
TA = 70_C 2.2
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150

THERMAL RESISTANCE RATINGSa

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient RthJA 29 35
_C/W
Maximum Junction-to-Foot (Drain) RthJF 13 16

Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec

Document Number: 71628 www.vishay.com

S-40762—Rev. E, 19-Apr-04 1
Si4362DY
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA

VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5

On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A

VGS = 10 V, ID = 20 A 0.0035 0.0045

Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 19 A 0.0042 0.0055
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 90 S
Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V

Dynamicb
Total Gate Charge Qg 42 55

Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 12.8 nC

Gate-Drain Charge Qgd 7.7
Gate Resistance RG 0.5 1.3 2.2 W
Turn-On Delay Time td(on) 17 30
Rise Time tr VDD = 15 V, RL = 15 W 14 25
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 158 230 ns
Fall Time tf 43 65
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 50 80

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

60 60

VGS = 10 thru 3 V
50 50

40 40
I D − Drain Current (A)

I D − Drain Current (A)

30 30

20 20
TC = 125_C
10 2V 10
25_C
−55_C

0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

www.vishay.com Document Number: 71628

2 S-40762—Rev. E, 19-Apr-04
 Si4362DY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance
0.010 8000

0.008
r DS(on) − On-Resistance ( W )

Ciss
6000

C − Capacitance (pF)
0.006
VGS = 4.5 V 4000

0.004
VGS = 10 V
2000
0.002 Coss
Crss

0.000 0
0 10 20 30 40 50 0 6 12 18 24 30

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

5 1.6

VDS = 15 V VGS = 10 V
V GS − Gate-to-Source Voltage (V)

4 ID = 20 A 1.4 ID = 20 A
rDS(on) − On-Resiistance
(Normalized)

3 1.2

2 1.0

1 0.8

0 0.6
0 10 20 30 40 50 −50 −25 0 25 50 75 100 125 150

TJ − Junction Temperature (_C)

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

50 0.025

0.020
r DS(on) − On-Resistance ( W )
I S − Source Current (A)

TJ = 150_C
10 0.015

0.010
TJ = 25_C
ID = 20 A
0.005

1 0.000
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 71628 www.vishay.com

S-40762—Rev. E, 19-Apr-04 3
 Si4362DY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power
0.4 60

ID = 250 mA 50
0.2
V GS(th) Variance (V)

−0.0 40

Power (W)
−0.2 30

−0.4 20

−0.6 10

−0.8 0
−50 −25 0 25 50 75 100 125 150 10−2 10−1 1 10 100 600
TJ − Temperature (_C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600
Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 71628

4 S-40762—Rev. E, 19-Apr-04
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Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
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or in any other disclosure relating to any product.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1