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SUD50N024-06P
New Product Vishay Siliconix

N-Channel 22-V (D-S) 175_C MOSFET

FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)d D 175_C Junction Temperature
D PWM Optimized for High Efficiency
0.006 @ VGS = 10 V 80
24C
0.0095 @ VGS = 4.5 V 64
APPLICATIONS
D Synchronous Buck DC/DC Conversion
- Desktop
D - Server
TO-252

G
Drain Connected to Tab

G D S

Top View

Order Number: S
SUD50N024-06P
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Pulse Voltage VDS(pulse) 24C

Drain-Source Voltage VDS 22 V

Gate-Source Voltage VGS "20

TC = 25_C 80d
Continuous Drain Currenta ID
TC= 100_C 56d

Pulsed Drain Current IDM 100 A

Continuous Source Current (Diode Conduction)a IS 26

Avalanche Current, Single Pulse L = 0.1 mH IAS 45

Avalanche Energy, Single Pulse EAS 101 mJ

TA = 25_C 6.8a
Maximum Power Dissipation PD W
TC = 25_C 65

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 18 22
Maximum Junction to Ambienta
Junction-to-Ambient RthJA
Steady State 40 50 _C/W
C/W
Maximum Junction-to-Case RthJC 1.9 2.3

Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.

Document Number: 72289 www.vishay.com

S-31398—Rev. A, 30-Jun-03 1
www.DataSheet4U.com
SUD50N024-06P
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 22
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 16 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 16 V, VGS = 0 V, TJ = 125_C 50
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 20 A 0.0046 0.006
Drain-Source
Drain Source On State Resistanceb
On-State rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C 0.0084 W
VGS = 4.5 V, ID = 20 A 0.0073 0.0095
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 15 S

Dynamica
Input Capacitance Ciss 2550
Output Capacitance Coss VGS = 0 V, VDS = 10 V, f = 1 MHz 900 pF
p
Reverse Transfer Capacitance Crss 415
Gate Resistance RG 1.5 W
Total Gate Chargec Qg 19 30
Gate-Source Chargec Qgs VDS = 10 V, VGS = 4.5 V, ID = 50 A 7.5 nC
Gate-Drain Chargec Qgd 6.0
Turn-On Delay Timec td(on) 11 20
Rise Timec tr VDD = 10 V, RL = 0.2 W 10 15
ns
Turn-Off Delay Timec td(off) ID ^ 50 A, VGEN = 10 V, RG = 2.5 W 24 35
Fall Timec tf 9 15

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current ISM 100 A
Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 35 70 ns

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

160 100

140
VGS = 10 thru 5 V 80
120
I D - Drain Current (A)

I D - Drain Current (A)

4V
100
60

80

40
60
TC = 125_C
40 3V
20
25_C
20
2V - 55_C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72289

2 S-31398—Rev. A, 30-Jun-03
www.DataSheet4U.com
SUD50N024-06P
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Transconductance On-Resistance vs. Drain Current
100 0.010

TC = - 55_C

r DS(on)- On-Resistance ( W )
80 25_C 0.008
g fs - Transconductance (S)

VGS = 4.5 V

125_C
60 0.006
VGS = 6.3 V

40 0.004
VGS = 10 V

20 0.002

0 0.000
0 10 20 30 40 50 0 20 40 60 80 100

ID - Drain Current (A) ID - Drain Current (A)

Capacitance Gate Charge

3500 10

3000 VDS = 10 V
V GS - Gate-to-Source Voltage (V)

Ciss 8 ID = 50 A
2500
C - Capacitance (pF)

6
2000

1500
4
Coss
1000
Crss
2
500

0 0
0 4 8 12 16 20 0 8 16 24 32 40

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

1.6 100
VGS = 10 V
ID = 30 A
1.4
r DS(on)- On-Resistance ( W )

I S - Source Current (A)

(Normalized)

1.2
TJ = 150_C
TJ = 25_C
10
1.0

0.8

0.6 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

Document Number: 72289 www.vishay.com

S-31398—Rev. A, 30-Jun-03 3
www.DataSheet4U.com
SUD50N024-06P
Vishay Siliconix New Product

THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature Safe Operating Area
40 1000

Limited
by rDS(on)
32 10, 100 ms
100

I D - Drain Current (A)

I D - Drain Current (A)

1 ms
24 10
10 ms
100 ms
16 1 1s
10 s
100 s
8 0.1 TA = 25_C dc
Single Pulse

0 0.01
0 25 50 75 100 125 150 175 0.1 1 10 100
TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1
0.02

0.05

Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1 Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1
0.02
0.05
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10 100
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72289

4 S-31398—Rev. A, 30-Jun-03