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40N06 TO252
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N-Channel 6 0-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES


• TrenchFET® Power MOSFET
VDS (V) rDS(on) (Ω) ID (A)a
• 175 °C Junction Temperature Available
0.025 at VGS = 10 V 35
60 RoHS*
0.030 at VGS = 4.5 V 30 COMPLIANT

TO-252 D

Drain Connected to Tab

G D S
S
Top View
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted


Parameter Symbol Limit Unit
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 35
Continuous Drain Current (TJ = 175 °C)b ID
TC = 100 °C 28
Pulsed Drain Current IDM 100 A
Continuous Source Current (Diode Conduction) IS 23
Avalanche Current IAS 20
Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ
TC = 25 °C 100
Maximum Power Dissipation PD W
TA = 25 °C 3a
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS


Parameter Symbol Typical Maximum Unit
t ≤ 10 sec 18 22
Maximum Junction-to-Ambienta RthJA
Steady State 40 50 °C/W
Maximum Junction-to-Case RthJC 3.2 4
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted


Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.0 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 15 A 0.025 0.031
VGS = 10 V, ID = 15 A, TJ = 125 °C 0.055
Drain-Source On-State Resistanceb rDS(on) Ω
VGS = 10 V, ID = 15 A, TJ = 175 °C 0.069
VGS = 4.5 V, ID = 10 A 0.030 0.045
Forward Transconductance b gfs VDS = 15 V, ID = 15 A 20 S
Dynamica
Input Capacitance Ciss 670
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 140 pF
Reverse Transfer Capacitance Crss 60
Total Gate Chargec Qg 11 17
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 23 A 3 nC
c Qgd 3
Gate-Drain Charge
Turn-On Delay Timec td(on) 8 15
Rise Timec tr VDD = 30 V, RL = 1.3 Ω 15 25
ns
Turn-Off Delay Timec td(off) ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 30 45
Fall Timec tf 25 40
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current ISM 50 A
Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C unless noted

100 50
VGS = 10 thru 6 V
5V
80 40

I D - Drain Current (A)


I D - Drain Current (A)

60 30

40 4V 20

20 10 TC = 125 °C
25 °C
3V
- 55 °C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)


Output Characteristics Transfer Characteristics

32 0.10

TC = - 55 °C
25 °C 0.08
24
g fs - Transconductance (S)

r DS(on) - On-Resistance (Ω)

125 °C
0.06
16
VGS = 4.5 V
0.04 VGS = 10 V

8
0.02

0 0.00
0 5 10 15 20 25 0 10 20 30 40 50

ID - Drain Current (A) ID - Drain Current (A)


Transconductance On-Resistance vs. Drain Current

1000 10

VDS = 30 V
V GS - Gate-to-Source Voltage (V)

800 8 ID = 23 A
Ciss
C - Capacitance (pF)

600 6

400 4

200 Coss 2

Crss
0 0
0 10 20 30 40 50 60 0 2 4 6 8 10 12

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)


Capacitance Gate Charge

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TYPICAL CHARACTERISTICS 25 °C unless noted

2.5 100
VGS = 10 V
ID = 15 A
2.0
rDS(on) - On-Resistance

I S - Source Current (A)


(Normalized)

1.5
TJ = 150 °C TJ = 25 °C
10

1.0

0.5

0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

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THERMAL RATINGS

25 100
*rDS(on) Limited
10 µs

20 100 µs

I D - Drain Current (A)


I D - Drain Current (A)

10
15

1 ms
10
1 10 ms
100 ms
TC = 25 °C dc
5
Single Pulse

0 0.1
0.1 1 10 100
0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TA - Ambient Temperature (°C) *VGS > minimum VGS at which rDS(on) is specified
Maximum Drain Current Safe Operating Area
vs. Ambient Temperature

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1
0.05
0.02
Single Pulse

0.01 10- 4 10- 3 10- 2 10- 1 1 10


Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case

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