DTM4420

www.din-tek.jp
N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.009 at VGS= 10 V 13
30 6.8 nC • Optimized for High-Side Synchronous
0.012 at VGS = 4.5 V 12 Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested

APPLICATIONS
• Notebook CPU Core
- High-Side Switch
SO-8 D

S 1 8 D

S 2 7 D

S 3 6 D
G
G 4 5 D

Top View
S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 13
TC = 70 °C 12
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 11b, c
TA = 70 °C 9b, c
A
Pulsed Drain Current IDM 50
TC = 25 °C 3.8
Continuous Source-Drain Diode Current IS
TA = 25 °C 2.1b, c
Single Pulse Avalanche Current IAS 22
L = 0.1 mH
Avalanche Energy EAS 24 mJ
TC = 25 °C 4.5
TC = 70 °C 2.8
Maximum Power Dissipation PD W
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 22 28
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.

1
 DTM4420
www.din-tek.jp

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient ΔVDS/TJ 28
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 5 A 0.009 0.010
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 3 A 0.012 0.016
Forward Transconductancea gfs VDS = 15 V, ID = 11 A 52 S
Dynamicb
Input Capacitance Ciss 820
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 195 pF
Reverse Transfer Capacitance Crss 73
VDS = 15 V, VGS = 10 V, ID = 11 A 15 23
Total Gate Charge Qg
6.8 10.2
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 11 A 2.5
Gate-Drain Charge Qgd 2.3
Gate Resistance Rg f = 1 MHz 0.36 1.8 3.6 Ω
Turn-On Delay Time td(on) 16 24
Rise Time tr VDD = 15 V, RL = 1.4 Ω 12 18
Turn-Off Delay Time td(off) ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 16 24
Fall Time tf 10 20
ns
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 15 V, RL = 1.4 Ω 10 20
Turn-Off Delay Time td(off) ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 16 24
Fall Time tf 8 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 25
A
Pulse Diode Forward Currenta ISM 50
Body Diode Voltage VSD IS = 9 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 15 30 ns
Body Diode Reverse Recovery Charge Qrr 6 12 nC
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 8
ns
Reverse Recovery Rise Time tb 7
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

2
 DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 5
VGS = 10 thru 4 V

40 4
TC = - 55 °C
I D - Drain Current (A)

I D - Drain Current (A)

30 3

20 2
VGS = 3 V
TC = 25 °C

10 1
TC = 125 °C

0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.015 1200

0.013 VGS = 4.5 V

R DS(on) - On-Resistance (Ω)

900 Ciss
C - Capacitance (pF)

0.011
VGS = 10 V
600

0.009

300 Coss
0.007

Crss
0.005 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8

ID = 11 A ID = 11 A
VGS - Gate-to-Source Voltage (V)

8
1.5
R DS(on) - On-Resistance

VGS = 10 V
VDS = 15 V
(Normalized)

6
VDS = 24 V 1.2

4 VGS = 4.5 V

0.9
2

0 0.6
0 4 8 12 16 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

3
 DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030

0.025
10

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C
0.020
1 TJ = 25 °C TJ = 125 °C
0.015

0.1
0.010
TJ = 25 °C
0.01
0.005

0.001 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.2 50

2.0
40

1.8
Power (W)

30
VGS(th) (V)

ID = 250 µA
1.6

20
1.4

10
1.2

1.0 0
- 50 - 25 0 25 50 75 100 125 150 10- 3 10- 2 10- 1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

100 µA
10
I D - Drain Current (A)

1 ms

1 10 ms

100 ms

1s
0.1 10 s
TA = 25 °C
Single Pulse DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

4
 DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

18

15

I D - Drain Current (A)

12

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

6
2.0

1.5
4
Power (W)
Power (W)

3
1.0

0.5
1

0
0.0
0 25 50 75 100 125 150
0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

5
 DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

6
 Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

1
 Application Note
www.din-tek.jp

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

1
 Legal Disclaimer Notice
www.din-tek.jp
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.