SB5150 THRU SB5200

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current - 5.0 Amperes
DO-201AD FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MAX.
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
0.210 (5.3)
0.190 (4.8)
High forward surge current capability
DIA. High temperature soldering guaranteed:
0.375 (9.50)
250 C/10 seconds,0.375”(9.5mm) lead length,
0.285(7.20) 5 lbs. (2.3kg) tension

1.0 (25.4)
MAX.
MECHANICAL DATA
0.052 (1.3)
0.048 (1.2)
Case: JEDEC DO-201AD molded plastic body
DIA. Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Dimensions in inches and (millimeters) Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS SB5150 SB5200 UNITS

Maximum repetitive peak reverse voltage VRRM 150 200 VOLTS
Maximum RMS voltage VRMS 105 140 VOLTS
Maximum DC blocking voltage VDC 150 200 VOLTS
Maximum average forward rectified current
I(AV) 5.0 Amps
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on IFSM 150.0 Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A VF 0.92 0.95 Volts
Maximum DC reverse current TA=25 C 0.5
IR mA
at rated DC blocking voltage TA=100 C 20
Typical junction capacitance (NOTE 1) CJ 400 pF
Typical thermal resistance (NOTE 2) R JA 25.0 C/W
Operating junction temperature range TJ -65 to +150 C
Storage temperature range TSTG -65 to +150 C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1 GOOD ELECTRONIC CO., LTD

 RATINGS AND CHARACTERISTIC CURVES SB5150 THRU SB5200
AVERAGE FORWARD RECTIFIED CURRENT,

FIG. 1- FORWARD CURRENT DERATING CURVE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

PEAK FORWARD SURGE CURRENT,

SURGE CURRENT
5 150

4 125

AMPERES
AMPERES

Single Phase
3 Half Wave 60Hz 100
Resistive or
inductive Load

2
75

50 8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

0
0 25 50 75 100 125 150 175 25
1 10 100

AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD FIG. 4-TYPICAL REVERSE CHARACTERISTICS

CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT,
100
20
INSTANTANEOUS FORWARD

10
CURRENT,AMPERES

10
TJ=100 C
MILLIAMPERES

1 SB5150
TJ=25 C
PULSE WIDTH=300 s 1
1%DUTY CYCLE TJ=75 C

0.1 SB5200 0.1

0.01 TJ=25 C
0.01
0.2 0.4 0.6 0.8 1.0 1.1

0.001
0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS PERCENT OF PEAK REVERSE VOLTAGE,%
TRANSIENT THERMAL IMPEDANCE,

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000 100
JUNCTION CAPACITANCE, pF

TJ=25 C
1000

10
C/W

100
1

0.1
0.01 0.1 1 10 100

10
0.1 1.0 10 100
REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec.

2 GOOD ELECTRONIC CO., LTD