ES2ABF THRU ES2JBF

SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER

Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Amperes

SMBF
FEATURES
Cathode Band
Top View For surface mounted applications
Low profile package
0.146(3.70) 0.086(2.20) Glass Passivated Chip Junction
0.138(3.50) 0.075(1.90)
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.173(4.4)
0.165(4.2)

0.010(0.26)
0.051(1.30)
0.0071(0.18)
0.043(1.10)

0.051(1.30)
0.039(1.0) MECHANICAL DATA

Case: JEDEC SMBF molded plastic body

Terminals: leads solderable per MIL-STD-750,
Method 2026
0.216(5.5)
Mounting Position: Any
0.200(5.1) Weight:57mg/0.002oz
Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MDD Catalog Number SYMBOLS ES2ABF ES2BBF ES2DBF ES2GBF ES2JBF UNITS
Marking code E2AB E2BB E2DB E2GB E2JB
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 VOLTS
Maximum RMS voltage VRMS 35 70 140 280 420 VOLTS
Maximum DC blocking voltage VDC 50 100 200 400 600 VOLTS
Maximum average forward rectified current
I(AV) 2.0 Amps
at TL=100 C
Peak forward surge current
8.3ms single half sine-wave superimposed on IFSM 50 Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A VF 1.0 1.25 1.65 Volts
Maximum DC reverse current TA=25 C 5.0
IR µA
at rated DC blocking voltage TA=125 C 100.0
Maximum reverse recovery time (NOTE 1) trr 35 ns
Typical junction capacitance (NOTE 2) CJ 45.0 pF
Typical thermal resistance (NOTE 3) RθJA 65.0 C/W
Operating junction and storage temperature range TJ,TSTG -55 to +150 C
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
 RATINGS AND CHARACTERISTIC CURVES ES2ABF THRU ES2JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm 10 ohm
Noninductive Noninductive t rr
+0.5

D.U.T
+
PULSE
25Vdc GENERATOR 0
approx Note 2
- -0.25

1 ohm OSCILLOSCOPE
NonInductive Note 1

-1.0
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF. 10ns/div
2. Ries Time =10ns, max.
Set time Base for 10ns/div
Source Impedance = 50 ohms.

Fig.2 Maximum Average Forward Current Rating Fig.3 Typical Reverse Characteristics

2.4 300
Average Forward Current (A)

2.0 100

I R- Reverse Current ( μ A)
T J =125°C
1.6
10
1.2 T J =75°C

0.8
1.0
Single phase half wave resistive T J =25°C
0.4 or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm ) pad areas.

0.0 0.1
25 50 75 100 125 150 175 0 20 40 60 80 100

Lead Temperature (°C) % of PIV.VOLTS

Fig.4 Typical Forward Characteristics

Fig.5 Typical Junction Capacitance

10 70
Instaneous Forward Current (A)

T J =25°C 60
Junction Capacitance ( pF)

1.0
50
ES2ABF~ES2DBF
40
0.1 ES2EBF/ ES2GBF
30
ES2JBF
T J =25°C
20 f = 1.0MHz
0.01
V sig = 50mV p-p
10

0.001
0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100

Instaneous Forward Voltage (V) Reverse Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surage Current
Peak Forward Surage Current (A)

60

50

40

30

20

8.3 ms Single Half Sine Wave

10 (JEDEC Method)

00
1 10 100

Number of Cycles

The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!