KBP200 - KBP210 SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts

KBP
Io : 2.0 Amperes
0.71 (18.0)
0.63 (16.0)
FEATURES :
* High case dielectric strength
0.825 (20.95)
* High surge current capability 0.605 (15.36)
* High reliability + AC AC

* Low reverse current 0.035 (0.89)

0.028 (0.71)
* Low forward voltage drop
0.500 (12.7) 0.16 (4.00)
* Ideal for printed circuit board
MIN. 0.14 (3.55)

0.276 (7.01 )
0.236 (5.99)
MECHANICAL DATA : 0.105 (2.66)
0.085 (2.16)
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case Dimensions in inches and ( millimeter )
* Mounting position : Any
* Weight : 3.4 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

KBP KBP KBP KBP KBP KBP KBP

RATING SYMBOL
200 201 202 204 206 208 210
UNIT

Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 50°C IF(AV) 2.0 Amps.
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 60 Amps.
Rating for fusing ( t < 8.3 ms. ) 2
It 10 A 2S
Maximum Forward Voltage per Diode at IF = 1.0 Amp. VF 1.0 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 1.0 mA
Typical Junction Capacitance per Diode (Note 1) CJ 24 pF
Typical Thermal Resistance (Note 2) RθJA 30 °C/W
Operating Junction Temperature Range TJ - 50 to + 125 °C
Storage Temperature Range TSTG - 50 to + 125 °C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000
 RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT FORWARD SURGE CURRENT
80

PEAK FORWARD SURGE CURRENT,

2.0
AVERAGE FORWARD OUTPUT

70
CURRENT, AMPERES

1.5 60 Hz, Resistive or 60

inductive load. TJ = 55 ° C

AMPERES
50

1.0 40

30

0.5 20
P.C. Board Mounted with 8.3 ms SINGLE HALF SINE WAVE
0.47" X 0.47" ( 12mm X 12mm ) 10
JEDEC METHOD
Cu. pads.
0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE
REVERSE CURRENT, MICROAMPERES

100 10

Pulse Width = 300 µs TJ = 100 ° C

1 % Duty Cycle
FORWARD CURRENT, AMPERES

10 1.0

1.0 0.1 TJ = 25 ° C

TJ = 25 ° C
0.1 0.01
0 20 40 60 80 100 120 140

PERCENT OF RATED REVERSE

VOLTAGE, (%)
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE, VOLTS

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.