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S25VB20 ~ S25VB60 SILICON BRIDGE RECTIFIERS

BR50
PRV : 200 ~ 600 Volts
0.728(18.50)
Io : 25 Amperes 0.688(17.40)

FEATURES :
* High current capability 0.570(14.50) 0.685(16.70) 1.130(28.70)
* High surge current capability 0.530(13.40) 0.618(15.70) 1.120(28.40)

* High reliability
* Low reverse current
0.210(5.30)
* Low forward voltage drop 0.658(16.70) 0.200(5.10)
* Ideal for printed circuit board 0.618(15.70)
* Pb / RoHS Free 0.032(0.81) 0.252(6.40)
0.028(0.71) 0.248(6.30)
MECHANICAL DATA : φ 0.100(2.50)
* Case : Molded plastic with heatsink integrally 0.090(2.30)
mounted in the bridge encapsulation 0.905(23.0)
0.826(21.0)
* Epoxy : UL94V-O rate flame retardant 0.310(7.87)
* Terminals : plated .25" (6.35 mm). Faston 0.280(7.11)

* Polarity : Polarity symbols marked on case Metal Heatsink


* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge Dimensions in inches and ( millimeters )
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RATING SYMBOL S15VB20 S15VB60 UNIT

Maximum Reverse Voltage VRM 200 600 V


Maximum Average Forward Current Tc = 85°C IF(AV) 25 A
Maximum Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method) IFSM 400 A


2
Current Squared Time at 1ms < t < 10 ms. It 800 A2S
Maximum Forward Voltage per Diode at IF = 12.5 A VF 1.05 V
Maximum DC Reverse Current at VR = VRRM
IR 10 µA
(Pulse Measurement, Rating of per diode)

Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W


Operating Junction Temperature Range TJ 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C

Note :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2 Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( S25VB20 ~ S25VB60 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


RECTIFIED CURRENT FORWARD SURGE CURRENT
30 600

PEAK FORWARD SURGE CURRENT,


AVERAGE FORWARD OUTPUT

25 500
CURRENT, AMPERES

20 400 T J = 25 °C

AMPERES
15 300

10 200
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
5 (12.8cm x 15.2cm x 12.4cm) 100 50 Hz Sine W ave, Non-repetitive
Al.-Finned plate
1 Cycle Peak Value

0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


PER DIODE PER DIODE
REVERSE CURRENT, MICROAMPERES

100 10

T J = 100 °C
FORWARD CURRENT, AMPERES

10 1.0

Pulse test per one


diode
1.0 0.1 T J = 25 °C

T J = 25 °C
0.1 0.01
0 20 40 60 80 100 120 140

PERCENT OF RATED
REVERSE VOLTAGE, (%)
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE, VOLTS

Page 2 of 2 Rev. 01 : April 2, 2002

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