AP9T16GH/J

f=1.0MHz
14 10000

I D =18A
12
VGS , Gate to Source Voltage (V)

V DS =10V
10
V DS =12V
V DS =16V

C (pF)
8

1000
C iss
6

2
C oss
C rss
0 100
0 5 10 15 20 25 30 1 5 9 13 17 21 25

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5
100us

0.2

0.1
ID (A)

10
1ms 0.1

0.05

PDM
0.02
t
T
10ms 0.01

T c =25 o C 100ms Single Pulse

Duty factor = t/T
Peak Tj = P DM x Rthjc + T C
DC
Single Pulse
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform