Si2303DS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET


  
VDS (V) rDS(on) (
) ID (A)
0.240 @ VGS = –10 V –1.7
–30
0.460 @ VGS = –4.5 V –1.3

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2303DS (A3)*
*Marking Code

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS –30
V
Gate-Source Voltage VGS
20

Continuous Drain Current ((TJ = 150C)) TA = 25C –1.7

ID
board t  5 sec)
(surface mounted on FR4 board, TA = 70C –1.4
Pulsed Drain Currenta IDM –10 A

Continuous Source Current (MOSFET Diode Conduction)

IS –1.25
(surface mounted on FR4 board, t  5 sec)
TA = 25C 1.25
Maximum Power Dissipationa PD W
TA = 70C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C

    

Parameter Symbol Typical Unit
Maximum Junction-to-Ambient (surface mounted on FR4 board, t  5 sec) 100
RthJA C/W
Maximum Junction-to-Ambient (surface mounted on FR4 board) 166

Notes
a. Pulse width limited by maximum junction temperature.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70770 www.vishay.com
FaxBack 408-970-5600

S-49557—Rev. B, 27-Apr-98 2-1
Si2303DS
Vishay Siliconix


 
       
 
 


Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = –30 V, VGS = 0 V –1

Zero Gate Voltage Drain Current IDSS mA
VDS = –30 V, VGS = 0 V, TJ = 55C –10
On-State Drain Currenta ID(on) VDS w –5 V, VGS = –10 V –6 A
VGS = –10 V, ID = –1.7 A 0.190 0.240
Drain-Source On State Resistancea
Drain Source On-State rDS(on)
DS( ) W
VGS = –4.5 V, ID = –1.3 A 0.240 0.460

Forward Transconductancea gfs VDS = –10 V, ID = –1.7 A 2.4 S

Diode Forward Voltage VSD IS = –1.25 A, VGS = 0 V –0.8 –1.2 V

Dynamicb
Total Gate Charge Qg 5.8 10
Gate-Source Charge Qgs VDS = –15
15 V
V, VGS = –10
10 V
V, ID = –1.7
17A 0.8 nC
C
Gate-Drain Charge Qgd 1.5
Input Capacitance Ciss 226
Output Capacitance Coss VDS = –15 V, VGS = 0 V,
15 V V f = 1 MHz
MH 87 pF
F
Reverse Transfer Capacitance Crss 19

Switchingb
Turn-On Delay Time td(on) 9 20
Rise Time tr VDD = –15 V,, RL = 15 W
15 V 9 20
ns
Turn-Off Delay Time td(off) ID ^ –1
1 A,
A VGEN = –10 V, RG = 6 W
10 V 18 35
Fall Time tf 6 20

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

www.vishay.com
FaxBack 408-970-5600 Document Number: 70770

2-2 S-49557—Rev. B, 27-Apr-98
 Si2303DS
Vishay Siliconix

 
       
Output Characteristics Transfer Characteristics
10 10

VGS = 10 thru 6 V TC = –55C

8 8
5V 25C
I D – Drain Current (A)

I D – Drain Current (A)

125C
6 6

4 4
4V

2 2
3V

0 0
0 2 4 6 8 10 0 1 2 3 4 5 6 7
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.8 500
r DS(on) – On-Resistance (
)

400
C – Capacitance (pF)

0.6
VGS = 4.5 V
300
Ciss
0.4

200
VGS = 10 V Coss
0.2
100
Crss

0 0
0 2 4 6 8 10 0 6 12 18 24 30

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.8
VDS = 15 V VGS = 10 V
V GS – Gate-to-Source Voltage (V)

ID = 1.7 A ID = 1.7 A
r DS(on) – On-Resistance (
)

1.6
8
(Normalized)

1.4
6

1.2

4
1.0

2
0.8

0 0.6
0 1 2 3 4 5 6 –50 0 50 100 150

Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

Document Number: 70770 www.vishay.com
FaxBack 408-970-5600

S-49557—Rev. B, 27-Apr-98 2-3
Si2303DS
Vishay Siliconix

        


Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 1.0

r DS(on) – On-Resistance ( W )
0.8
I S – Source Current (A)

TJ = 150C
0.6

ID = 1.7 A

0.4
TJ = 25C

0.2

1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.5 10

0.4
8
V GS(th) Variance (V)

0.3
Power (W)

6
0.2
ID = 250 mA TC = 25C
Single Pulse
0.1 4

0.0
2
–0.1

–0.2 0
–50 0 50 100 150 0.01 0.10 1.00 10.00

TJ – Temperature (C)
Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10–4 10–3 10–2 10–1 1 10 30

Square Wave Pulse Duration (sec)

www.vishay.com
FaxBack 408-970-5600 Document Number: 70770

2-4 S-49557—Rev. B, 27-Apr-98
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1
www.s-manuals.com