SQJQ910EL

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Vishay Siliconix
Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L Dual
• TrenchFET® power MOSFET
• AEC-Q101 qualified
D1 • 100 % Rg and UIS tested
D2 • Fully lead (Pb)-free device
• Material categorization: 
1
G1
for definitions of compliance please see
8

2
m

www.vishay.com/doc?99912
m

mm 3 S1
1 8.1 4 S2
G2 D1 D2
Top View Bottom View

PRODUCT SUMMARY
VDS (V) 100
G1 G2
RDS(on) () at VGS = 10 V 0.0086
RDS(on) () at VGS = 4.5 V 0.0114
ID (A) per leg 70
Configuration Dual S1 S2
Package PowerPAK 8 x 8L N-Channel MOSFET N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100
V
Gate-source voltage VGS ± 20
TC = 25 °C a 70
Continuous drain current ID
TC = 125 °C 40
Continuous source current (diode conduction) a IS 100 A
Pulsed drain current b IDM 280
Single pulse avalanche current IAS 42
L = 0.1 mH
Single pulse avalanche energy EAS 88 mJ
TC = 25 °C 187
Maximum power dissipation b PD W
TC = 125 °C 62
Operating junction and storage temperature range TJ, Tstg -55 to +175
°C
Soldering recommendations (peak temperature) d, e 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount c RthJA 85
°C/W
Junction-to-case (drain) RthJC 2
Notes
a. Package limited
b. Pulse test; pulse width  300 μs, duty cycle  2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

S17-0464-Rev. A, 03-Apr-17 1 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQJQ910EL
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Vishay Siliconix

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 100 - -
V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = 20 V - - 1
Zero gate voltage drain current IDSS VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 μA
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150
On-state drain current a ID(on) VGS = 10 V VDS  5 V 40 - - A
VGS = 10 V ID = 10 A - 0.0072 0.0086
VGS = 4.5 V ID = 10 A - 0.0095 0.0114
Drain-source on-state resistance a RDS(on) 
VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.0110
VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.0187
Forward Transconductance b gfs VDS = 15 V, ID = 10 A - 52 - S
Dynamic b
Input capacitance Ciss - 2266 2832
Output capacitance Coss VGS = 0 V VDS = 50 V, f = 1 MHz - 799 1000 pF
Reverse transfer capacitance Crss - 34 43
Total gate charge c Qg - 46 58
Gate-source charge c Qgs VGS = 10 V VDS = 50 V, ID = 10 A - 7 - nC
Gate-drain charge c Qgd - 10 -
Gate resistance Rg f = 1 MHz 1.1 1.9 3.0 
Turn-on delay time c td(on) - 11 14
Rise time c tr VDD = 40 V, RL = 4  - 4 5
ns
Turn-off delay time c td(off) ID  10 A, VGEN = 10 V, Rg = 1  - 33 42
Fall time c tf - 7 8
Source-Drain Diode Ratings and Characteristics b

Pulsed current a ISM - - 280 A

Forward voltage VSD IF = 40 A, VGS = 0 - 1 1.2 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S17-0464-Rev. A, 03-Apr-17 2 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQJQ910EL
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

150 10000 10 10000

120 8
VGS = 10 V thru 4 V
ID - Drain Current (A)

ID - Drain Current (A)

1000 1000
90 6

2nd line

2nd line
1st line

1st line
2nd line

2nd line
60 4
100 TC = 25 °C 100
VGS = 3 V
30 2
TC = 125 °C TC = -55 °C
0 10 0 10
0 6 12 18 24 30 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

100 10000 0.025 10000

80 0.020
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)

1000 1000
60 0.015
2nd line

2nd line
1st line

1st line
2nd line

2nd line

40 0.010 VGS = 4.5 V

TC = 25 °C 100 100

20 0.005
VGS = 10 V
TC = 125 °C TC = -55 °C
0 10 0.000 10
0 1 2 3 4 5 0 20 40 60 80 100 120
VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)
2nd line 2nd line

Transfer Characteristics On-Resistance vs. Drain Current

Axis Title Axis Title

100 10000 10 10000
TC = -55 °C
VGS - Gate-to-Source Voltage (V)

ID = 10 A
80 8 VDS = 50 V
gfs - Transconductance (S)

TC = 25 °C
1000 1000
60 6
2nd line

2nd line
1st line

1st line
2nd line
2nd line

40 4
TC = 125 °C 100 100

20 2

0 10 0 10
0 5 10 15 20 25 0 12 24 36 48 60
ID - Drain Current (A) Qg - Total Gate Charge (nC)
2nd line 2nd line

Transconductance Capacitance

S17-0464-Rev. A, 03-Apr-17 3 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQJQ910EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

5000 10000 100 10000

4000 10

IS - Source Current (A)

C - Capacitance (pF)

1000 TJ = 150 °C TJ = 25 °C 1000

3000 1

2nd line

2nd line
1st line

1st line
2nd line

2nd line
Ciss

2000 0.1
100 100
Coss
1000 0.01
Crss
0 10 0.001 10
0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 1.2
VDS - Drain-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V)
2nd line 2nd line

Capacitance Source Drain Diode Forward Voltage

Axis Title Axis Title

2.5 10000 0.5 10000
RDS(on) - On-Resistance (Normalized)

ID = 20 A
VGS = 10 V
2.1 0.1
VGS(th) Variance (V)

1000 ID = 5 mA 1000
1.7 -0.3
2nd line

2nd line
1st line

1st line
2nd line
2nd line

1.3 -0.7
VGS = 4.5 V 100 100
ID = 250 μA
0.9 -1.1

0.5 10 -1.5 10
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C) TJ - Temperature (°C)
2nd line 2nd line

On-Resistance vs. Junction Temperature Threshold Voltage

Axis Title Axis Title

0.05 10000 125 10000
VDS - Drain-to-Source Voltage (V)

ID = 1 mA
RDS(on) - On-Resistance (Ω)

0.04 121

1000 1000
0.03 117
2nd line

2nd line
1st line

1st line
2nd line

2nd line

0.02 113
TJ = 150 °C 100 100

0.01 109
TJ = 25 °C

0.00 10 105 10
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)
2nd line 2nd line

On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature

S17-0464-Rev. A, 03-Apr-17 4 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQJQ910EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

1000

100

ID - Drain Current (A)

IDM limited

1 ms
10
10 ms
100 ms, 1 s,
Limited by RDS(on) (1) 10 s, DC
1

BVDSS limited
0.1
TC = 25 °C
single pulse
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) V
GS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02
Single Pulse

0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

S17-0464-Rev. A, 03-Apr-17 5 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQJQ910EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1 0.05

Single Pulse

0.02

0.01
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76026.

S17-0464-Rev. A, 03-Apr-17 6 Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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