FDS6982

June 1999

FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description Features
This part is designed to replace two single SO-8 MOSFETs • Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook RDS(on) = 0.020 Ω @ VGS = 4.5V
computers and other battery powered electronic devices. • Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench MOSFETs designed to maximize power RDS(on) = 0.035 Ω @ VGS = 4.5V
conversion efficiency.

The high-side switch (Q1) is designed with specific

• Fast switching speed.
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction losses (less • High performance trench technology for extremely
than 20mΩ at VGS = 4.5V). low RDS(ON).
Applications
• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.

D1
D1 5 Q1
4
D2
D2 6 3

G1 7 2
Q2
SO-8 S1
G2 8 1
pin 1 S2

Absolute Maximum Ratings T A = 25°C unless otherwise noted

Symbol Parameter Q2 Q1 Units

V DSS Drain-Source Voltage 30 30 V

V GSS Gate-Source Voltage ±20 ±20 V
ID Drain Current - Continuous (Note 1a) 8.6 6.3 A
- Pulsed 30 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
FDS6982 FDS6982 13” 12mm 2500 units
1999 Fairchild Semiconductor Corporation FDS6982, Rev. D1
 FDS6982
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown VGS = 0 V, ID = 250 µA Q2 30 V
Voltage Q1 30
∆BVDSS Breakdown Voltage ID = 250 µA, Referenced to 25°C Q2 27 mV/°C
∆TJ Temperature Coefficient Q1 26
IDSS Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V All 1 µA
Current
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA Q2 1 2.2 3 V
Q1 1 1.6 3
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Q2 -5 mV/°C
∆TJ Temperature Coefficient Q1 -4
RDS(on) Static Drain-Source VGS = 10 V, ID = 8.6 A Q2 0.012 0.015 Ω
On-Resistance VGS = 10 V, ID = 8.6 A, TJ = 125°C 0.018 0.024
VGS = 4.5 V, ID = 7.5 A 0.016 0.020
VGS = 10 V, ID = 6.3 A Q1 0.021 0.028 Ω
VGS = 10 V, ID = 6.3 A, TJ = 125°C 0.038 0.047
VGS = 4.5 V, ID = 5.6 A 0.028 0.035
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q2 30 A
Q1 20
gFS Forward Transconductance VDS = 5 V, ID = 8.6 A Q2 50 S
VDS = 5 V, ID = 6.3 A Q1 40

Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, Q2 2085 pF
f = 1.0 MHz Q1 760
Coss Output Capacitance Q2 420 pF
Q1 160
Crss Reverse Transfer Capacitance Q2 160 pF
Q1 70

FDS6982, Rev. D1
 FDS6982
Electrical Characteristics (continued) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, Q2 15 27 ns
VGS = 10V, RGEN = 6 Ω Q1 10 18
tr Turn-On Rise Time Q2 11 20 ns
Q1 14 25
td(off) Turn-Off Delay Time Q2 36 58 ns
Q1 21 34
tf Turn-Off Fall Time Q2 18 29 ns
Q1 7 14
Qg Total Gate Charge Q2 Q2 18.5 26 nC
VDS = 15 V, ID = 8.6 A, VGS = 5 V Q1 8.5 12
Qgs Gate-Source Charge Q2 7.3 nC
Q1 Q1 2.4
Qgd Gate-Drain Charge VDS = 15 V, ID = 6.3 A,VGS = 5 V Q2 6.2 nC
Q1 3.1

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2 1.3 A
Q1 1.3
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Q2 0.72 1.2 V
Voltage VGS = 0 V, IS = 1.3 A (Note 2) Q1 0.74 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.Thermal rating based on independant
single device opperation.

a) 78° C/W when b) 125° C/W when c) 135° C/W when

mounted on a 0.5 in2 mounted on a 0.02 in2 mounted on a
pad of 2 oz. copper. pad of 2 oz. copper. minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDS6982, Rev. D1
 FDS6982
Typical Characteristics: Q2

50 2
VGS = 10V
5.0V
4.5V 1.8
40
VGS = 4.0V
1.6
4.0V
30
1.4 4.5V

20 5.0V
1.2 6.0V
3.5V 7.0V
10 10V
1

3.0V
0 0.8
0 1 2 3 4 0 10 20 30 40 50

VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6 0.04
ID = 8.6A
ID = 4.5A
VGS = 10V
1.4
0.03

1.2 o
TA = 125 C
0.02
1
o
TA = 25 C
0.01
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10

TJ, JUNCTION TEMPERATURE ( C)

o VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation

with Temperature. with Gate-to-Source Voltage.

50 100
o
TA = -55 C VGS = 0V
VDS = 5V o
25 C
o 10
40 125 C
o
TA = 125 C
1
30 25 C
o

0.1
o
-55 C
20
0.01

10 0.001

0 0.0001

1 2 3 4 5 6 0 0.4 0.8 1.2 1.6

VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6982, Rev. D1
 FDS6982
Typical Characteristics: Q2 (continued)

10 3000
ID = 8.6A f = 1MHz
VDS = 5V 10V VGS = 0 V
2500
8
15V CISS
2000
6
1500
4
1000

2
500
COSS
CRSS
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

100 30
RDS(ON) LIMIT SINGLE PULSE
o
100µs RθJA = 135 C/W
25
1ms o
10 TA = 25 C
10ms
20
100ms
1s
1 10s 15
DC

VGS = 10V 10
0.1 SINGLE PULSE
o
RθJA = 135 C/W 5
o
TA = 25 C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

FDS6982, Rev. D1
 FDS6982
Typical Characteristics: Q1

40 2
VGS = 10V
6.0V
4.5V 1.8
30 4.0V
1.6 VGS = 3.5V

3.5V
20 1.4 4.0V
4.5V
5.0V
1.2
3.0V 6.0V
10
10V
1
2.5V
0 0.8
0 1 2 3 4 0 10 20 30 40
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6 0.08
ID = 6.3A
ID = 3.5A
VGS = 10V
1.4
0.06

1.2 o
TA = 125 C
0.04
1

o
0.02 TA = 25 C
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation Figure 14. On-Resistance Variation

with Temperature. with Gate-to-Source Voltage.

40 100
o
TA = -55 C o
VGS = 0V
VDS = 5V 25 C o
125 C 10
30 o
TA = 125 C
1
o
25 C
20 0.1
o
-55 C
0.01
10
0.001

0 0.0001
1 2 3 4 5 6 0 0.4 0.8 1.2 1.6

VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.

FDS6982, Rev. D1
 FDS6982
Typical Characteristics: Q1 (continued)

10 1200
ID = 6.3A f = 1MHz
VDS = 5V 10V VGS = 0 V
1000
8
15V
800
CISS
6
600
4
400

2
200
COSS
CRSS
0 0
0 4 8 12 16 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate-Charge Characteristics. Figure 18. Capacitance Characteristics.

100 30
SINGLE PULSE
o
100µs RθJA = 135 C/W
RDS(ON) LIMIT 25
1ms o
10 TA = 25 C
10ms
20
100ms
1s
1 10s 15
DC

VGS = 10V 10
0.1 SINGLE PULSE
o
RθJA = 135 C/W 5
o
TA = 25 C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.

FDS6982, Rev. D1
 FDS6982
Typical Characteristics: Q1 & Q2 (continued)

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 0.2
R θJA (t) = r(t) * R θJA
0.1 0.1 R θJA = 135°C/W
0.05 0.05

0.02 P(pk)
0.02 0.01
0.01 Single Pulse
t1
t2
0.005
TJ - TA = P * R θJA (t)
0.002 Duty Cycle, D = t1 /t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)

Figure 21. Transient Thermal Response Curve.

FDS6982, Rev. D1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
Mouser Electronics

Authorized Distributor

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FDS6982