B3942

N- and P-Channel 30-V (D-S) MOSFET

General Description Features

B3942 is the N- and P-Channel logic enhancement RDS(ON)=24mΩ@VGS=10V (N-Ch)
mode power field effect transistor using high cell RDS(ON)=38mΩ@VGS=4.5V (N-Ch)
density, DMOS trench technology in production. RDS(ON)=25mΩ@VGS=-10V (P-Ch)
This high density process is especially tailored to
RDS(ON)=26mΩ@VGS =-4.5V (P-Ch)
minimize on-state resistance. The device is
Super High Density Cell Design for
particularly suitable for low voltage application such
Extremely Low RDS(ON)
as cellular phone and notebook computer power
Exceptional On-Resistance and
management and other battery powered circuits
Maximum DC Current
where high-side switching and low in-line power
SOP-8 Package
loss are needed in a very small outline surface
mount package.

Applications
Pin Configuration Power Management in Note book
D1
D Portable Equipment
D1
D
D
D2 Battery Powered System
D
D2
DC/DC Converter
Load Switch
DSC
S
S1
S
G1
S
S2
G
G2

Absolute Maximum Ratings (TA=25 ℃ Unless Otherwise Noted):

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS ±20 ±20 V
Continuous Drain TA=25 ℃ 6.9 -6.1
Current(tJ=150 ) ℃ TA=70 ℃ ID
5.5 -4.9
A

Pulsed Drain Current IDM 30 -30 A

Continuous Source Current (Diode Conduction) IS 1.7 -1.7 A
TA=25℃ 2.0
TA=70℃
Maximum Power Dissipation PD W
1.44
Operating Junction Temperature TJ -55 to 150 ℃
Thermal Resistance-Junction to Case RθJC 62.5 ℃/W

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