AP4439GMT-HF

Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS -30V

▼ SO-8 Compatible RDS(ON) 10mΩ
▼ Lower Gate Charge ID -58A
▼ RoHS Compliant & Halogen-Free G
S
D
Description D
AP4439 series are from Advanced Power innovated design and silicon D
D
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 5x6 package is special for voltage conversion application
S
using standard infrared reflow technique with the backside heat sink to S
achieve the good thermal performance. S
G
PMPAK ® 5x6

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage +25 V
ID@TC=25℃ Continuous Drain Current (Chip), VGS @ 10V -58 A
3
ID@TA=25℃ Continuous Drain Current , VGS @ 10V -18.5 A
3
ID@TA=70℃ Continuous Drain Current , VGS @ 10V -14.8 A
1
IDM Pulsed Drain Current -200 A
PD@TC=25℃ Total Power Dissipation 50 W
PD@TA=25℃ Total Power Dissipation 5 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W

Data and specifications subject to change without notice 1

201205211