RoHS-compliant Product

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D

BVDSS 30V
▼ Low Gate Charge RDS(ON) 12mΩ
▼ Fast Switching G ID 45A
▼ RoHS Compliant S

Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, GD
STO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for all commercial-industrial surface

mount applications and suited for low voltage applications such as DC/DC
converters. The through-hole version (AP60T03GJ) are available for low-profile
applications. GD
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 45 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 32 A
1
IDM Pulsed Drain Current 120 A
PD@TC=25℃ Total Power Dissipation 44 W
Linear Derating Factor 0.3 W/℃
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W