AP60T03GH/J

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Free Datasheet http://www.datasheet4u.com/

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C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - - 12 mΩ
VGS=4.5V, ID=15A - - 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
2
gfs Forward Transconductance VDS=10V, ID=10A - 25 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T =175 C) V =24V ,V =0V - - 250 uA
j DS GS

IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA

2
Qg Total Gate Charge ID=20A - 12 20 nC
Qgs Gate-Source Charge VDS=20V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC
Qoss Output Charge VDD=15V,VGS=0V - 10 16 nC
2
td(on) Turn-on Delay Time VDS=15V - 9 - ns
tr Rise Time ID=20A - 58 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tf Fall Time RD=0.75Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 1135 1820 pF
Coss Output Capacitance VDS=25V - 200 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF
Rg Gate Resistance f=1.0MHz - 1.4 2.1 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=20A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP60T03GH/J

125 90
5 oC oC
0

ID , Drain Current (A)

ID , Drain Current (A)

T C =2 10V T C =175 1
8.0 V
V
100
8.0V
6.0V 60
6.0 V
75

5.0V
50 5.0 V
30

VG 0V
25 =4. V G =4.0 V

0 0
0 1 2 3 0 1 2 3 4 5
4

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

80 2

15A 20
ID ID
Normalized RDS(ON)

A
= =
60
T C =2 5 ℃ 1.6
V G =1 0V
RDS(ON) (mΩ)

40 1.2

20 0.8

0 0.4
2 4 6 8 -50 25 100 175
10 o
V GS , Gate-to-Source Voltage T j , Junction Temperature ( C)
(V)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.8

2.3
VGS(th) (V)

10

1.8
IS(A)

o o
T j = 175 C Tj C
=2
1.3
5
1

0.8

0.1 0.3
0 0.5 1 -50 25 100 175
1.5 o
V SD , Source-to-Drain Voltage T j , Junction Temperature ( C )
(V)

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