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ELECTROCS 6s2wsws2w0t03__b1444
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=20A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
2
AP60T03GH/J
125 90
5 oC oC
0
T C =2 10V T C =175 1
8.0 V
V
100
8.0V
6.0V 60
6.0 V
75
5.0V
50 5.0 V
30
VG 0V
25 =4. V G =4.0 V
0 0
0 1 2 3 0 1 2 3 4 5
4
80 2
15A 20
ID ID
Normalized RDS(ON)
A
= =
60
T C =2 5 ℃ 1.6
V G =1 0V
RDS(ON) (mΩ)
40 1.2
20 0.8
0 0.4
2 4 6 8 -50 25 100 175
10 o
V GS , Gate-to-Source Voltage T j , Junction Temperature ( C)
(V)
2.3
VGS(th) (V)
10
1.8
IS(A)
o o
T j = 175 C Tj C
=2
1.3
5
1
0.8
0.1 0.3
0 0.5 1 -50 25 100 175
1.5 o
V SD , Source-to-Drain Voltage T j , Junction Temperature ( C )
(V)