Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
4612

Features
n-channel p-channel
VDS (V) = 60V -60V
ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)
RDS(ON) RDS(ON)
< 55mΩ (VGS=10V) < 80m Ω (VGS = -10V)
< 60mΩ (VGS=4.5V) < 95m Ω (VGS = -4.5V)

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 60 -60 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain
Current A TA=25°C ID 4.5 -3.2
A
Pulsed Drain Current B IDM 20 -20

TA=25°C PD 2 2 W
Power Dissipation
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C
Thermal Characteristics: n-channel and p-channel
Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 48 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State n-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 35 60 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 48 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State p-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 40 °C/W
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V

IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V 1 µA

IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA

VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 2.1 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A

VGS=10V, ID=4.5A 46 55 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=3A 50 60 mΩ
gFS Forward Transconductance VDS=5V, ID=4.5A 11 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 60 pF
Crss Reverse Transfer Capacitance 25 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.65 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.5 10.5 nC
Qg(4.5V) Total Gate Charge 4.3 5.5 nC
VGS=10V, VDS=30V, ID=4.5A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 4.7 7 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=6.7Ω, 2.3 4.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.7 24 ns
tf Turn-Off Fall Time 1.9 4 ns
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 27.5 35 ns
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 32 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

20 15
10V
5.0V VDS=5V
15
10
4.5V
ID (A)

125°C

ID(A)
10

4.0V
5
5
25°C

VGS=3.5V
0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5 5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

100 2
90 VGS=10V
Normalized On-Resistance

1.8 ID=4.5A
80
VGS=4.5V 1.6
RDS(ON) (mΩ)

70 VGS=4.5V
60 1.4 ID=3.0A
50
1.2
VGS=10V
40

30 1

20 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

140 1.0E+01

ID=4.5A
1.0E+00
120

1.0E-01 125°C
RDS(ON) (mΩ)

100
IS (A)

125°C 1.0E-02
80
1.0E-03 25°C

60 25°C 1.0E-04

40 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=30V
ID= 4.5A
8
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4
Coss
200
2
Crss

0 0
0 10 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150°C
limited TA=25°C
100µs 10µs
30
10.0
Power (W)
ID (Amps)

10ms 1ms
20
1s
1.0
10s 0.1s 10
TJ(Max)=150°C
TA=25°C DC

0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -60 V

IDSS Zero Gate Voltage Drain Current VDS=-48V, VGS=0V -1 µA

IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -2.1 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A

VGS=-10V, ID=-3.2A 75 80 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.8A 85 90 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3.2A 9 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.73 -1 V
IS Maximum Body-Diode Continuous Current -3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1120 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 85 pF
Crss Reverse Transfer Capacitance 35 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 7.2 9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 16 20 nC
Qg(4.5V) Total Gate Charge (4.5V) 8 10 nC
VGS=-10V, VDS=-30V, ID=-3.2A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=9.4Ω, 3.8 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 31.5 48 ns
tf Turn-Off Fall Time 7.5 15 ns
trr Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs 32 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given
givenapplication
applicationdepends
dependson onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thett≤≤10s
10sthermal
thermalresistance
resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev2: August 2005
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

20 30

-10V VDS=-5V
25
15 -4.5V
-4.0V
20
-ID (A)

-ID(A)
10 15
-3.5V
10
5
125°C
5
VGS=-3.0V 25°C
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

130 Normalized On-Resistance 2

120 1.8 ID=-3.2A

VGS=-4.5V
VGS=-10V
110 1.6
RDS(ON) (mΩ)

100 1.4 VGS=-4.5V

ID=-2.8A
90 1.2

VGS=-10V 1
80

0.8
70
0 2 4 6 8 10 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

200 1.0E+01

180 ID=-3.2 1.0E+00

160 1.0E-01
125°C
RDS(ON) (mΩ)

125°C
140 1.0E-02
-IS (A)

120
1.0E-03

100
1.0E-04
80 25°C 25°C
1.0E-05
60
2 3 4 5 6 7 8 9 10 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1400

1200
8 VDS=-30V
Ciss
ID=-3.2A 1000

Capacitance (pF)
-VGS (Volts)

6 800

600
4
400
2 Coss Crss
200

0 0
0 4 8 12 16 20 0 10 20 30 40 50 60

-Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 30
10.0 100µs
limited 1ms
-ID (Amps)

Power (W)

10ms
0.1s 20

1.0
1s 10
10s DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance