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High−Speed CMOS Data

DL129/D
Rev. 8, January−2005

 SCILLC, 2005
Previous Edition  2000
“All Rights Reserved’’

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Table of Contents

Page Page

Numeric Data Sheet Listing


Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4

Chapter 2: Data Sheets


Chapter 1: Selector Guide
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Buffers/Inverters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Schmitt Triggers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Chapter 3: Case Outlines and Package
Bus Transceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Dimensions
Latches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Flip−Flops . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Case Outlines and Package Dimensions . . . . . . . . . . . . 388
Digital Data Selectors/Multiplexers . . . . . . . . . . . . . . . . . . 19
Decoders/Demultiplexers/Display Drivers . . . . . . . . . . . . 20
Analog Switches/Multiplexers/ Chapter 4: Index
Demultiplexers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 High−Speed CMOS Device Index . . . . . . . . . . . . . . . . . . 406
Shift Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Counters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Miscellaneous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

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Numeric Data Sheet Listing

Data Sheet Function Page

MC74HC00A Quad 2−Input NAND Gate − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . 27

MC74HC02A Quad 2−Input NOR Gate − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . 31

MC74HC03A Quad 2−Input NAND Gate with Open−Drain Outputs − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

MC74HC04A Hex Inverter − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . 39

MC74HC08A Quad 2−Input AND Gate − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . 43

MC74HC125A,
MC74HC126A Quad 3−State Noninverting Buffers − High−Performance Silicon−Gate CMOS . . . . . 47

MC74HC132A Quad 2−Input NAND Gate with Schmitt−Trigger Inputs − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

MC74HC138A 1−of−8 Decoder/ Demultiplexer − High−Performance Silicon−Gate CMOS . . . . . . . . 58

MC74HC139A Dual 1−of−4 Decoder/Demultiplexer − High−Performance Silicon−Gate CMOS . . . . 63

MC74HC14A Hex Schmitt−Trigger Inverter − High−Performance Silicon−Gate CMOS . . . . . . . . . . 69

MC74HC157A Quad 2−Input Data Selectors / Multiplexers − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

MC74HC161A,
MC74HC163A Presettable Counters − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . 79

MC74HC164A 8−Bit Serial−Input/Parallel−Output Shift Register − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

MC74HC174A Hex D Flip−Flop with Common Clock and Reset − High−Performance Silicon−
Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98

MC74HC175A Quad D Flip−Flop with Common Clock and Reset − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

MC74HC1G00 Single 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

MC74HC1G02 Single 2−Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

MC74HC1G04 Single Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

MC74HC1G08 Single 2−Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122

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Data Sheet Function Page

MC74HC1G14 Single Inverter with Schmitt−Trigger Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

MC74HC1G32 Single 2−Input OR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

MC74HC1GU04 Single Unbuffered Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134

MC74HC240A Octal 3−State Inverting Buffer/Line Driver/Line Receiver − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138

MC74HC244A Octal 3−State Noninverting Buffer/Line Driver/Line Receiver − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

MC74HC245A Octal 3−State Noninverting Bus Transceiver − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

MC74HC273A Octal D Flip−Flop with Common Clock and Reset − High−Performance Silicon−
Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154

MC74HC32A Quad 2−Input OR Gate − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . 160

MC74HC373A Octal 3−State Non−Inverting Transparent Latch − High−Performance Silicon−


Gate CMOs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164

MC74HC374A Octal 3−State Non−Inverting D Flip−Flop − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

MC74HC390A Dual 4−Stage Binary Ripple Counter with ÷ 2 and ÷ 5 Sections − High−
Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175

MC74HC393A Dual 4−Stage Binary Ripple Counter − High−Performance Silicon−Gate CMOS . . . 181

MC74HC4020A 14−Stage Binary Ripple Counter − High−Performance Silicon−Gate CMOS . . . . . . 187

MC74HC4040A 12−Stage Binary Ripple Counter − High−Performance Silicon−Gate CMOS . . . . . . 193

MC74HC4046A Phase−Locked Loop − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . 199

MC74HC4051A,
MC74HC4052A,
MC74HC4053A Analog Multiplexers / Demultiplexers − High−Performance Silicon−Gate CMOS . . . 213

MC74HC4060A 14−Stage Binary Ripple Counter With Oscillator − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226

MC74HC4066A Quad Analog Switch/Multiplexer/Demultiplexer − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235

MC74HC4316A Quad Analog Switch/Multiplexer/Demultiplexer with Separate Analog and Digital


Power Supplies − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . 246

MC74HC4538A Dual Precision Monostable Multivibrator (Retriggerable, Resettable) . . . . . . . . . . . . . 257

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Data Sheet Function Page

MC74HC4851A,
MC74HC4852A Analog Multiplexers/Demultiplexers with Injection Current Effect
Control − Automotive Customized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270

MC74HC540A Octal 3−State Inverting Buffer/Line Driver/Line Receiver − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280

MC74HC541A Octal 3−State Noninverting Buffer/Line Driver/Line Receiver − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 286

MC74HC573A Octal 3−State Noninverting Transparent Latch − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 292

MC74HC574A Octal 3−State Noninverting D Flip−Flop − High−Performance Silicon−Gate


CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298

MC74HC589A 8−Bit Serial or Parallel−Input/Serial−Output Shift Register with 3−State


Output − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304

MC74HC595A 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State


Outputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313

MC74HC74A Dual D Flip−Flop with Set and Reset − High−Performance Silicon−Gate CMOS . . . 321

MC74HCT04A Hex Inverter − With LSTTL−Compatible Inputs High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 326

MC74HCT138A 1−of−8 Decoder/ Demultiplexer with LSTTL Compatible Inputs − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330

MC74HCT14A Hex Schmitt−Trigger Inverter with LSTTL Compatible Inputs − High−Performance


Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 335

MC74HCT244A Octal 3−State Noninverting Buffer/Line Driver/Line Receiver with LSTTL−Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 340

MC74HCT245A Octal 3−State Noninverting Bus Transceiver with LSTTL Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 344

MC74HCT273A Octal D Flip−Flop with Common Clock and Reset with LSTTL−Compatible
Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 349

MC74HCT373A Octal 3−State Noninverting Transparent Latch with LSTTL−Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 353

MC74HCT374A Octal 3−State Noninverting D Flip−Flop with LSTTL−Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 359

MC74HCT541A Octal 3−State Non−Inverting Buffer/Line Driver/Line Receiver With LSTTL−Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364

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Data Sheet Function Page

MC74HCT573A Octal 3−State Noninverting Transparent Latch with LSTTL Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368

MC74HCT574A Octal 3−State Noninverting D Flip−Flop with LSTTL−Compatible


Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373

MC74HCT74A Dual D Flip−Flop with Set and Reset with LSTTL Compatible
Inputs − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 378

MC74HCU04A Hex Unbuffered Inverter − High−Performance Silicon−Gate CMOS . . . . . . . . . . . . . . 383

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CHAPTER 1
Selector Guide

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BUFFERS/INVERTERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC04A Hex Inverter LS04 *4069 LS/CMOS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HCT04A Hex Inverter with LSTTL−Compatible Inputs LS04 *4069 LS/CMOS 14
HCU04A Hex Unbuffered Inverter LS04 4069 LS/CMOS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC14A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HCT14A ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Hex Schmitt−Trigger Inverter

ÎÎÎÎÎ
ÎÎÎ
Hex Schmitt−Trigger Inverter with LSTTL−Compatible
LS14
LS14
4584
4584
LS/CMOS
LS/CMOS
14
14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC125A Quad 3−State Noninverting Buffer LS125,LS125A LS 14
HC126A Quad 3−State Noninverting Buffer LS126,LS126A LS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC240A Octal 3−State Inverting Buffer/Line Driver/Line Receiver LS240 LS 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC244A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HCT244A
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
Receiver ÎÎÎ
Octal 3−State Noninverting Buffer/Line Driver/Line

ÎÎÎÎÎ
ÎÎÎ
Octal 3−State Noninverting Buffer/Line Driver/Line
LS244

LS244
LS

LS
20

20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
HC245A ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Receiver with LSTTL−Compatible Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
Octal 3−State Noninverting Bus Transceiver LS245 LS 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HCT245A Octal 3−State Noninverting Bus Transceiver with LS245 LS 20
LSTTL−Compatible Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC540A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC541A
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Octal 3−State Inverting Buffer/Line Driver/Line Receiver

ÎÎÎÎÎ
ÎÎÎ
Octal 3−State Noninverting Buffer/Line Driver/Line LS541 LS
20

20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
HCT541A ÎÎÎÎÎ
ÎÎÎÎÎ
Receiver

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Octal 3−State Noninverting Buffer/Line Driver/Line
Receiver with LSTTL−Compatible Inputs
LS541 LS 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
HC HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
HCT HCU HC HC HC HC HCT HCT
Device 04A 04A 14A 125A 126A 240A 244A 245A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
# Pins
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Quad Device
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
14 14 14 14

14

20 20 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Hex Device   
  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Octal Device
Nine−Wide Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Noninverting Outputs

ÎÎÎ
Inverting Outputs ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
  
 

 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
Schmitt Trigger ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Single Stage (unbuffered)

ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
3−State Outputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
Open−Drain Outputs ÎÎÎ
ÎÎÎ
Common Output Enables
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
  







ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Active−Low Output Enables    


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Active−High Output Enables
 
Separate 4−Bit Sections

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Transceiver ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Separate 2−Bit and 4−Bit Sections

ÎÎÎ
ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Direction Control 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Logic−Level Down Converter

http://onsemi.com
11
BUFFERS/INVERTERS (Continued)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
HC
HC HCT

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
# Pins ÎÎÎ
ÎÎÎ
ÎÎÎ
Device 540A

20
541A
20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Quad Device
Hex Device
Octal Device
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Nine−Wide Device
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Noninverting Outputs ÎÎÎ
ÎÎÎ
ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Inverting Outputs 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Single Stage (unbuffered)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Schmitt Trigger

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
3−State Outputs  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Open−Drain Outputs
Common Output Enables  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Active−Low Output Enables  

http://onsemi.com
12
GATES
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC00A Quad 2−Input NAND Gate LS00 4011 LS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC02A Quad 2−Input NOR Gate 4001 14
HC03A Quad 2−Input NAND Gate with Open−Drain Outputs *4011 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC08A

ÎÎÎÎÎ
HC32A
HC86A
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Quad 2−Input AND Gate

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
Quad 2−Input OR Gate
Quad 2−Input Exclusive OR Gate
LS08
LS32
LS86
4081
4071
4070
LS
LS
14
14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
LS 14
HC132A Quad 2−Input NAND Gate with Schmitt−Trigger Inputs LS132 4093 LS 14

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC HC HC HC HC
Device 00A 02A 03A 08A 32A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
# Pins
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Single Device
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
14 14 14 14 14

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Dual Device
Triple Device ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ     

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Quad Device

NAND
NOR
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ




ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
AND 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
OR 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Exclusive OR

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Exclusive NOR
AND−NOR

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
AND−OR

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2−Input
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−Input ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
    

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4−Input
8−Input

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
13−Input

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Schmitt−Trigger Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Open−Drain Outputs 

http://onsemi.com
13
GATES (Continued)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC HC
86A 132A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
# Pins 14 14

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Single Device
Dual Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Triple Device
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Quad Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
NAND 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
NOR
AND

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
OR

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Exclusive OR
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Exclusive NOR ÎÎÎ
ÎÎÎÎ
ÎÎÎ


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
AND−NOR
AND−OR

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2−Input
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−Input ÎÎÎ
ÎÎÎÎ
ÎÎÎ
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
4−Input
8−Input

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
13−Input
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Schmitt−Trigger Inputs ÎÎÎ
ÎÎÎÎ
ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Open−Drain Outputs
ÎÎÎÎ
ÎÎÎ

http://onsemi.com
14
SCHMITT TRIGGERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC14A Hex Schmitt−Trigger Inverter LS14 4584 LS/CMOS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HCT14A Hex Schmitt−Trigger Inverter with LSTTL−Compatible LS14 4584 LS 14
Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC132A Quad 2−Input NAND Gate with Schmitt−Trigger Inputs LS132 4093 LS 14

BUS TRANSCEIVERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC245A Octal 3−State Noninverting Bus Transceiver LS245 LS 20
HCT245A Octal 3−State Noninverting Bus Transceiver with LS245 LS 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
LSTTL−Compatible Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎ HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
Device
HCT
245A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
# Pins 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Quad Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Octal Device 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Buffer 
Storage Capability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inverting Outputs
Noninverting Outputs
ÎÎÎ
ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Output Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Output Enable ÎÎÎ
ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Active−High Output Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Direction Control 

http://onsemi.com
15
LATCHES
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC373A Octal 3−State Noninverting Transparent Latch LS373 LS373 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HCT373A Octal 3−State Noninverting Transparent Latch with LS373 LS373 20
LSTTL−Compatible Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC573A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HCT573A ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Octal 3−State Noninverting Transparent Latch

ÎÎÎÎÎ
ÎÎÎ
Octal 3−State Noninverting Transparent Latch with
LS373
LS373
LS573
LS573
20
20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
LSTTL−Compatible Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎÎ
ÎÎÎ HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
HCT HCT

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Device 373A 573A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
# Pins 20 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Single Device
Dual Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Octal Device
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Number of Bits Controlled by Latch Enable:
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
8  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Transparent  
Addressable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Readback Capability

Noninverting Outputs ÎÎÎÎ


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Inverting Outputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Common Latch Enable, Active−Low  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
3−State Outputs  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Common Output Enable, Active−Low  
These devices are identical in function and are different in pinout only: HC/HCT373A and HC/HCT573A

http://onsemi.com
16
FLIP−FLOPS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
HC74A Dual D Flip−Flop with Set and Reset LS74,LS74A *4013 LS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
HCT74A Dual D Flip−Flop with Set and Reset with LS74,LS74A 4013 LS 14
LSTTL−Compatible Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC174A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC175A ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Hex D Flip−Flop with Common Clock and Reset

ÎÎÎ
Quad D Flip−Flop with Common Clock and Reset
LS174
LS175
4174
4175
LS/CMOS
LS/CMOS
16
16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC273A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HCT273A ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Octal D Flip−Flop with Common Clock and Reset

ÎÎÎ
Octal D Flip−Flop with Common Clock and Reset with
LS273
LS273
LS
LS
20
20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
LSTTL−Compatible Inputs
HC374A Octal 3−State Noninverting D Flip−Flop LS374 LS374 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HCT374A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Octal 3−State Noninverting D Flip−Flop with

ÎÎÎ
LSTTL−Compatible Inputs
LS374 LS374 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
HC574A Octal 3−State Noninverting D Flip−Flop LS374 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
HCT574A Octal 3−State Noninverting D Flip−Flop with LS374 20
LSTTL−Compatible Inputs
*Suggested alternative

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎ HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
HCT HC HC
74A 174A 175/A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
# Pins 14 16 16
Type D D D

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Dual Device
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Quad Device ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Hex Device 
Octal Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Clock
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Negative−Transition Clocking ÎÎÎ
ÎÎÎ 
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎ
ÎÎÎ
Positive−Transition Clocking  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Common, Active−Low Data Enables

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Noninverting Outputs   
Inverting Outputs  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−State Outputs
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Common, Active−Low Output Enables

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Common Reset  


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Active−Low Reset  
Active−High Reset

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Set
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Transceiver
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Direction Control

http://onsemi.com
17
FLIP−FLOPS (Continued)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
HC Devices Have CMOS−Compatible Inputs. HCT Devices Have LSTTL−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ HC HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
HCT HCT HCT

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Device 273A 374A 574A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
# Pins 20 20 20
Type D D D

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Dual Device
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Quad Device ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Hex Device
Octal Device   

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Clock
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Negative−Transition Clocking ÎÎÎ
ÎÎÎ
  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎ
ÎÎÎ
Positive−Transition Clocking   

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Common, Active−Low Data Enables

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Noninverting Outputs   
Inverting Outputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−State Outputs
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Common, Active−Low Output Enables





ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Reset
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Reset
Active−High Reset
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Set
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Transceiver
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Direction Control
These devices are identical in function and are different in pinout only: HC374A and HC574A

http://onsemi.com
18
DIGITAL DATA SELECTORS/MULTIPLEXERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Number
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC157A Quad 2−Input Noninverting Data Selector/Multiplexer LS157 LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC251 8−Input Data Selector/Multiplexer with 3−State Outputs LS251 *4512 LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC253 Dual 4−Input Data Selector/Multiplexer with 3−State LS253 LS 16
Outputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
HC257
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Quad 2−Input Data Selector/Multiplexer with 3−State

ÎÎÎÎÎ
Outputs
*Suggested alternative
ÎÎÎ
LS257B LS 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Device 157A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
# Pins 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Description One of
two 4−bit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
words is

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
selected

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Single Device
Dual Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Quad Device 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Data Latch with Active−Low Latch Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Address
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1−Bit Binary Address

ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
2−Bit Binary Address
3−Bit Binary Address

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Address Latch (Transparent)
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Address Latch (Non−transparent)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Active−Low Address Latch Enable


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Noninverting Output
Inverting Output

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−State Outputs
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Common Output Enable
ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−High Output Enable
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Output Enable

ÎÎÎ


http://onsemi.com
19
DECODERS/DEMULTIPLEXERS/DISPLAY DRIVERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Number
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
HC138A 1−of−8 Decoder/Demultiplexer LS138 *4028 LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
HCT138A 1−of−8 Decoder/Demultiplexer with LSTTL−Compatible LS138 *4028 LS 16
Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC139A
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Dual 1−of−4 Decoder/Demultiplexer
*Suggested alternative
LS139 4556 LS/CMOS 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎ
HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
HCT HC
Device 138A 139A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
# Pins
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Description
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
16
3−Bit Binary
16
2−Bit Binary

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Address Address

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Output Description One of 8 One of 4

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Single Device 


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Dual Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Address Input Latch
Active−High Latch Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Active−Low Latch Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Active−Low Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Active−Low Outputs  
Active−High Outputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Active−Low Output Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Active−High Output Enable ÎÎÎÎ
ÎÎÎÎ




ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Reset
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Active−Low Blanking Input ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Active−High Blanking Input

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Active−Low Lamp−Test Input
Phase Input (for LCD’s)
 Implies the device has two such enables

http://onsemi.com
20
ANALOG SWITCHES/MULTIPLEXERS/DEMULTIPLEXERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC4051A 8−Channel Analog Multiplexer/Demultiplexer 4051 CMOS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC4052A Dual 4−Channel Analog Multiplexer/Demultiplexer 4052 CMOS 16
HC4053A Triple 2−Channel Analog Multiplexer/Demultiplexer 4053 CMOS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC4066A Quad Analog Switch/Multiplexer/Demultiplexer 4066,4016 CMOS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC4316/A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC4851A
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Quad Analog Switch/Multiplexer/Demultiplexer with

ÎÎÎÎÎ
ÎÎÎ
Separate Analog and Digital Power Supplies
*4016 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Analog Multiplexer/Demultiplexer with Injection Current *4051 20
Effect Control

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC4852A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Analog Multiplexer/Demultiplexer with Injection Current

ÎÎÎÎÎ
ÎÎÎ
Effect Control
*Suggested alternative
*4052 20

 High−Speed CMOS design only

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ HC HC HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Device 4051A 4052A 4053A 4066A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
# Pins 16 16 16 14

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Description A 3−Bit Address A 2−Bit Address A 3−Bit Address 4 Independently

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Selects One of 8 Selects One of 4 Selects Varying Controlled
Switches Switches Combinations of Switches

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
the 6 Switches

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Single Device 


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Dual Device
Triple Device 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Quad Device 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
1−to−1 Multiplexing 


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
2−to−1 Multiplexing
4−to−1 Multiplexing 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
8−to−1 Multiplexing 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Active−High ON/OFF Control 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Common Address Inputs  


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
2−Bit Binary Address
3−Bit Binary Address  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Address Latch with Active−Low Latch

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Enable

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
Common Switch Enable

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎ
Active−Low Enable ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ







ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Active−High Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Separate Analog and Control Reference   

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Power Supplies


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Switched Tubs (for RON and Prop. Delay
Improvement)

http://onsemi.com
21
ANALOG SWITCHES/MULTIPLEXERS/DEMULTIPLEXERS (Continued)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
HC HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Device 4316A 4851A 4852A
# Pins 16 20 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Description
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
4 Independently
Controlled Switches
A 3−Bit Address
Selects One of 8
A 3−Bit Address
Selects Varying

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
(Has a Separate Switches Combinations of

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Analog Lower (Has Injection Current the 6 Switches
Power Supply) Protection) (Has Injection Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Protection)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Single Device 


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Dual Device
Triple Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Quad Device 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
1−to−1 Multiplexing 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
2−to−1 Multiplexing
4−to−1 Multiplexing 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
8−to−1 Multiplexing 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Active−High ON/OFF Control 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Common Address Inputs 


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
2−Bit Binary Address
3−Bit Binary Address  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
Common Switch Enable

ÎÎÎÎÎÎÎ
Active−Low Enable ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ







ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Active−High Enable
  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Separate Analog and Control Reference Power Supplies

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Switched Tubs (for RON and Prop. Delay Improvement)
njection Current Protection  

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22
SHIFT REGISTERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC164A 8−Bit Serial−Input/Parallel−Output Shift Register LS164 LS 14

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC165A 8−Bit Serial− or Parallel−Input/Serial−Output Shift Register LS165 *4021 LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC589A 8−Bit Serial− or Parallel−Input/Serial−Output Shift Register 16
with 3−State Output

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
HC595A

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
8−Bit Serial−Input/Serial− or Parallel−Output Shift Register

ÎÎÎÎÎ
ÎÎÎ
with Latched 3−State Outputs
*Suggested alternative
16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
HC HC HC HC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Device 164A 165A 589A 595A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
# Pins 14 16 16 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
4−Bit Register
8−Bit Register    

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Serial Data Input
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parallel Data Inputs ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
 





ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Serial Output Only
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parallel Outputs ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ







ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Inverting Output
Noninverting Output    

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Shifts One Direction Only ÎÎÎ
Serial Shift/Parallel Load Control

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ




 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Shifts Both Directions

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Positive−Transition Clocking    
Active−High Clock Enable 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Data Enable
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Data Latch with Active−High Latch Clock



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3−State Outputs
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Output Latch with Active−High Latch Clock

ÎÎÎÎ
ÎÎÎ 



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Active−Low Output Enable  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Active−Low Reset
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ  

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23
COUNTERS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC161A Presettable 4−Bit Binary Counter with Asynchronous LS161,LS161A LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Reset
HC163A Presettable 4−Bit Binary Counter with Synchronous Reset LS161,LS161A LS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC390A Dual 4−Stage Binary Ripple Counter with ÷ 2 and ÷ 5 16
Sections 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
HC393A
HC4020A ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Dual 4−Stage Binary Ripple Counter
14−Stage Binary Ripple Counter
LS393 *4520
4020
LS
CMOS
14
16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC4040A 12−Stage Binary Ripple Counter 4040 CMOS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
HC4060A 14−Stage Binary Ripple Counter with Oscillator 4060 CMOS 16
*Suggested alternative

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
HC Devices Have CMOS−Compatible Inputs.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
HC HC HC HC HC HC HC
Device 161A 163A 390A 393A 4020A 4040A 4060A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
# Pins
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Single Device
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
16

16

16 14 16

16

16


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Dual Device

Ripple Counter ÎÎÎ


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ





   

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Number of Ripple Counter Internal Stages 4 4 14 12 14

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Number of Stages with Available Outputs 4 4 12 12 10

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Count Up       

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
4−Bit Binary Counter   


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
BCD Counter
Decimal Counter

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Separate ÷ 2 Section

ÎÎÎ ÎÎÎ
ÎÎÎ
Separate ÷ 5 Section ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
On−Chip Oscillator Capability

ÎÎÎÎ ÎÎÎ
ÎÎÎ
Positive−Transition Clocking
ÎÎÎ  


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Negative−Transition Clocking     

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Active−High Clock Enable
Active−Low Clock Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Active−High Reset
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
Active−High Count Enable

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ



     

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
4−Bit Binary Preset Data Inputs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
BCD Preset Data Inputs
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Active−Low Load Preset  

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Carry Output  
 implies the device has two such enables

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24
MISCELLANEOUS DEVICES
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ Functional

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Functional Equivalent

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Equivalent CMOS
Device LSTTL Device Number

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Number

ÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC74 ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Function
Device
74
MC1XXXX
or CDXXXX
Direct Pin
Compatibility
of
Pins

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
HC4046A Phase−Locked Loop 4046 CMOS 16

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
HC4538A Dual Precision Monostable Multivibrator 4538,4528 CMOS 16
(Retriggerable, Resettable)

http://onsemi.com
25
CHAPTER 2
Data Sheets

http://onsemi.com
26
MC74HC00A

Quad 2−Input NAND Gate


High−Performance Silicon−Gate CMOS
The MC74HC00A is identical in pinout to the LS00. The device
inputs are compatible with Standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs. http://onsemi.com

Features
• Pb−Free Packages are Available*
MARKING
DIAGRAMS
• Output Drive Capability: 10 LSTTL Loads 14
• Outputs Directly Interface to CMOS, NMOS and TTL PDIP−14
MC74HC00AN
• Operating Voltage Range: 2 to 6 V
N SUFFIX
CASE 646 AWLYYWW
• Low Input Current: 1 A 1
• High Noise Immunity Characteristic of CMOS Devices 14
• In Compliance With the JEDEC Standard No. 7 A Requirements SOIC−14
HC00A
D SUFFIX
• Chip Complexity: 32 FETs or 8 Equivalent Gates CASE 751A
AWLYWW

1
14
LOGIC DIAGRAM HC
TSSOP−14
1 DT SUFFIX 00A
A1 3
Y1 CASE 948G ALYW
2
B1
1
4
A2 6 A = Assembly Location
5 Y2
B2 WL or L = Wafer Lot
Y = AB YY or Y = Year
9 WW or W = Work Week
A3 8
10 Y3
B3

12 FUNCTION TABLE
A4 11
13 Y4 Inputs Output
B4
A B Y
PIN 14 = VCC
PIN 7 = GND L L H
L H H
Pinout: 14−Lead Packages (Top View) H L H
VCC B4 A4 Y4 B3 A3 Y3 H H L

14 13 12 11 10 9 8

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 28 of this data sheet.

1 2 3 4 5 6 7
A1 B1 Y1 A2 B2 Y2 GND

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004 27 Publication Order Number:


December, 2004 − Rev. 9 MC74HC00A/D
MC74HC00A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ VCC = 6.0 V 0 400

ORDERING INFORMATION
Device Package Shipping†
MC74HC00AN PDIP−14 2000 Units / Box
MC74HC00ANG PDIP−14 2000 Units / Box
(Pb−Free)

MC74HC00AD SOIC−14 55 Units / Rail


MC74HC00ADG SOIC−14 55 Units / Rail
(Pb−Free)

MC74HC00ADR2 SOIC−14 2500 Units / Reel


MC74HC00ADR2G SOIC−14 2500 Units / Reel
(Pb−Free)

MC74HC00ADT TSSOP−14* 96 Units / Rail


MC74HC00ADTR2 TSSOP−14* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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28
MC74HC00A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20A 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20A 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20A 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 A
Current (per Package) Iout = 0A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55
4.5 15 19 22
6.0 13 16 19
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

CPD Power Dissipation Capacitance (Per Buffer)* 22 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
29
MC74HC00A

tf tr
VCC
90%
INPUT 50%
A OR B
10% GND
tPLH tPHL

90%
OUTPUT Y 50%
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A
Y
B

Figure 3. Expanded Logic Diagram


(1/4 of the Device)

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30
MC74HC02A

Quad 2−Input NOR Gate


High−Performance Silicon−Gate CMOS
The MC74HC02A is identical in pinout to the LS02. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs. http://onsemi.com

Features
MARKING
• Pb−Free Packages are Available* DIAGRAMS
• Output Drive Capability: 10 LSTTL Loads 14

• Outputs Directly Interface to CMOS, NMOS, and TTL


PDIP−14
N SUFFIX MC74HC02AN
• Operating Voltage Range: 2.0 to 6.0 V CASE 646 AWLYYWW

• Low Input Current: 1.0 A 1



14
High Noise Immunity Characteristic of CMOS Devices
SOIC−14
• In Compliance with the Requirements Defined by JEDEC Standard D SUFFIX
HC02A
AWLYWW
No. 7.0 A CASE 751A

• Chip Complexity: 40 FETs or 10 Equivalent Gates 1


14

TSSOP−14 HC
LOGIC DIAGRAM DT SUFFIX 02A
CASE 948G ALYW
2
A1 1 1
3 Y1
B1
A = Assembly Location
5 WL or L = Wafer Lot
A2 4
Y2 YY or Y = Year
6
B2 WW or W = Work Week
Y=A+B
8
A3 10 FUNCTION TABLE
9 Y3
B3 Inputs Output
11 A B Y
A4 13
12 Y4 L L H
B4 L H L
PIN 14 = VCC H L L
PIN 7 = GND H H L

PIN ASSIGNMENT

Y1 1 14 VCC ORDERING INFORMATION


A1 2 13 Y4 See detailed ordering and shipping information in the package
dimensions section on page 34 of this data sheet.
B1 3 12 B4
Y2 4 11 A4
A2 5 10 Y3
B2 6 9 B3

GND 7 8 A3

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004 31 Publication Order Number:


December, 2004 − Rev. 9 MC74HC02A/D
MC74HC02A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ VCC = 6.0 V 0 400

http://onsemi.com
32
MC74HC02A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25C  85C  125°C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V
Voltage |Iout|  20 A 3.0 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 4.2 4.2 4.2
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 0.5 0.5 0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 A 3.0
4.5
6.0
0.9
1.35
1.8
0.9
1.35
1.8
0.9
1.35
1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 A
2.0
4.5
1.9
4.4
1.9
4.4
1.9
4.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9
Vin = VIH or VIL |Iout|  2.4 mA 3.0 2.48 2.34 2.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.2
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 A

Vin = VIH or VIL |Iout|  2.4 mA


4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3.0 0.26 0.33 0.4
|Iout|  4.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
|Iout| = 0 A
6.0 1.0 10 40 A

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 2)
2.0
3.0
75
30
95
40
110
55
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance — 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Gate)* 22 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
33
MC74HC02A

ORDERING INFORMATION
Device Package Shipping†
MC74HC02AN PDIP−14 2000 Units / Box
MC74HC02ANG PDIP−14 2000 Units / Box
(Pb−Free)

MC74HC02AD SOIC−14 55 Units / Rail


MC74HC02ADG SOIC−14 55 Units / Rail
(Pb−Free)

MC74HC02ADR2 SOIC−14 2500 Units / Reel


MC74HC02ADR2G SOIC−14 2500 Units / Reel
(Pb−Free)

MC74HC02ADT TSSOP−14* 96 Units / Rail


MC74HC02ADTR2 TSSOP−14* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

tf tr TEST POINT

INPUT 90% VCC


50% OUTPUT
A OR B
10% GND DEVICE
UNDER
tPLH tPHL CL*
TEST
90%
OUTPUT Y 50%
10%
tTLH tTHL
*Includes all probe and jig capacitance

Figure 1. Switching Waveforms Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM


(1/4 OF THE DEVICE)

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34
MC74HC03A

Quad 2−Input NAND Gate


with Open−Drain Outputs
High−Performance Silicon−Gate CMOS
The MC74HC03A is identical in pinout to the LS03. The device
inputs are compatible with Standard CMOS outputs; with pullup
http://onsemi.com
resistors, they are compatible with LSTTL outputs.
The HC03A NAND gate has, as its outputs, a high−performance MARKING
MOS N−Channel transistor. This NAND gate can, therefore, with a DIAGRAMS
suitable pullup resistor, be used in wired−AND applications. Having 14
the output characteristic curves given in this data sheet, this device can PDIP−14
N SUFFIX MC74HC03AN
be used as an LED driver or in any other application that only requires CASE 646 AWLYYWW
a sinking current.
1
• Output Drive Capability: 10 LSTTL Loads With Suitable Pullup 14
Resistor SOIC−14
HC03A
• Outputs Directly Interface to CMOS, NMOS and TTL D SUFFIX
AWLYWW
CASE 751A
• High Noise Immunity Characteristic of CMOS Devices 1
• Operating Voltage Range: 2 to 6V 14
• Low Input Current: 1µA TSSOP−14 HC
• In Compliance With the JEDEC Standard No. 7A Requirements DT SUFFIX 03A
• Chip Complexity: 28 FETs or 7 Equivalent Gates CASE 948G ALYW

DESIGN GUIDE 1
A = Assembly Location
Criteria Value Unit WL or L = Wafer Lot
Internal Gate Count* 7.0 ea YY or Y = Year
Internal Gate Propagation Delay 1.5 ns WW or W = Work Week

Internal Gate Power Dissipation 5.0 µW


FUNCTION TABLE
Speed Power Product 0.0075 pJ
* Equivalent to a two−input NAND gate Inputs Output
LOGIC DIAGRAM A B Y
VCC
L L Z
OUTPUT L H Z
PIN 14 = VCC PROTECTION
PIN 7 = GND H L Z
DIODE
* Denotes open−drain outputs 3,6,8,11 H H L
Y*
Z = High Impedance
1,4,9,12
A
2,5,10,13
B

ORDERING INFORMATION
Pinout: 14−Lead Packages (Top View)
Device Package Shipping
VCC B4 A4 Y4 B3 A3 Y3
14 13 12 11 10 9 8 MC74HC03AN PDIP−14 2000 / Box
MC74HC03AD SOIC−14 55 / Rail
MC74HC03ADR2 SOIC−14 2500 / Reel
MC74HC03ADT TSSOP−14 96 / Rail
1 2 3 4 5 6 7 MC74HC03ADTR2 TSSOP−14 2500 / Reel
A1 B1 Y1 A2 B2 Y2 GND

 Semiconductor Components Industries, LLC, 2000 35 Publication Order Number:


March, 2000 − Rev. 8 MC74HC03A/D
MC74HC03A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 25 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package
*Maximum Ratings are those values beyond which damage to the device may occur.
260
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC = 6.0 V 0 400

VCC Guaranteed Limit


Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOL Maximum Low−Level Output Vout = 0.1V or VCC − 0.1V 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 µA
Current (per Package) Iout = 0µA
IOZ Maximum Three−State Leakage Output in High−Impedance State 6.0 ±0.5 ±5.0 ±10 µA
Current Vin = VIL or VIH
Vout = VCC or GND
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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36
MC74HC03A

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLZ, Maximum Propagation Delay, Input A or B to Output Y 2.0 120 150 180 ns
tPZL (Figures 1 and 2) 3.0 45 60 75
4.5 24 30 36
6.0 20 26 31
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
Cout Maximum Three−State Output Capacitance 10 10 10 pF
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

CPD Power Dissipation Capacitance (Per Buffer)* 8.0 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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37
MC74HC03A

VCC

tr tf
1kΩ Rpd
VCC
90%
INPUT A 50% OUTPUT TEST
10% GND DEVICE POINT
tPZL tPLZ UNDER
HIGH TEST CL*
90% IMPEDANCE
OUTPUT Y 50%
10% 10%
VOL
tTHL *Includes all probe and jig capacitance

Figure 1. Switching Waveforms Figure 2. Test Circuit

25
VCC=5V
TYPICAL
T=25°C
20
I D, SINK CURRENT (mA)

T=25°C
15
T=85°C

10 T=125°C

EXPECTED MINIMUM*
5

0
0 1 2 3 4 5
VO, OUTPUT VOLTAGE (VOLTS)

*The expected minimum curves are not guarantees, but are design aids.

Figure 3. Open−Drain Output Characteristics

VCC VCC
VCC +
VR

PULLUP +
RESISTOR VF
A1 −
1/4 Y1
OUTPUT 1/4 1/4
HC03
B1 LED1 HC03 HC03

A2 DESIGN EXAMPLE
1/4 Y2
CONDITIONS: ID 10mA
B2 HC03 LED2
USING FIGURE NO TAG TYPICAL
CURVE, at ID=10mA, VDS 0.4V
LED
ENABLE V  VF  VO
An
1/4 Yn R  CC
ID
HC03
Bn
 5V  1.7V  0.4V
OUTPUT = Y1 • Y2 • . . . • Yn 10mA
= A1B1 • A2B2 • . . . • AnBn  290
USE R = 270Ω

Figure 4. Wired AND Figure 5. LED Driver With Blanking

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38
MC74HC04A

Hex Inverter
High−Performance Silicon−Gate CMOS
The MC74HC04A is identical in pinout to the LS04 and the
MC14069. The device inputs are compatible with Standard CMOS
outputs; with pullup resistors, they are compatible with LSTTL http://onsemi.com
outputs.
The device consists of six three−stage inverters.
Features PDIP−14
N SUFFIX
• Output Drive Capability: 10 LSTTL Loads CASE 646
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2 to 6V
SOIC−14
• Low Input Current: 1A D SUFFIX
• High Noise Immunity Characteristic of CMOS Devices CASE 751A

• In Compliance With the JEDEC Standard No. 7A Requirements TSSOP−14


• Chip Complexity: 36 FETs or 9 Equivalent Gates DT SUFFIX
• Pb−Free Packages are Available* CASE 948G

LOGIC DIAGRAM
MARKING DIAGRAMS
1 2
A1 Y1 14
MC74HC04AN
3 4 AWLYYWW
A2 Y2
1

5 6 14
A3 Y3
Y=A HC04A
9 8 AWLYWW
A4 Y4
1

11 10 14
A5 Y5
HC
04A
13 12 ALYW
A6 Y6
1
A = Assembly Location
Pinout: 14−Lead Packages (Top View) WL or L = Wafer Lot
VCC A6 Y6 A5 Y5 A4 Y4 YY or Y = Year
14 13 12 11 10 9 8 WW or W = Work Week

FUNCTION TABLE
Inputs Outputs

A Y
L H
1 2 3 4 5 6 7 H L
A1 Y1 A2 Y2 A3 Y3 GND

*For additional information on our Pb−Free strategy and soldering details, please ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D. dimensions section on page 40 of this data sheet.

 Semiconductor Components Industries, LLC, 2004 39 Publication Order Number:


November, 2004 − Rev. 9 MC74HC04A/D
MC74HC04A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 25 mA

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
PD Power Dissipation in Still Air, Plastic DIP† 750 mW

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
TSSOP Package† 450

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Tstg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎ
Storage Temperature

ÎÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
– 65 to + 150 C
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation,
Vin and Vout should be constrained to the range GND  (Vin or Vout)  VCC. Unused inputs must always be tied to an appropriate logic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating − Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ORDERING INFORMATION
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC = 6.0 V 0 400

Device Order N
Number
mber Package Shipping†
MC74HC04AN PDIP−14 2000 / Box
MC74HC04ANG PDIP−14 2000 / Box
(Pb−Free)

MC74HC04AN SOIC−14 55 / Rail


MC74HC04ADR2 SOIC−14 2500 / Tape & Reel
MC74HC04ADR2G SOIC−14 2500 / Tape & Reel
(Pb−Free)

MC74HC04ADT TSSOP−14* 96 / Rail


(Pb−Free)

MC74HC04ADTR2 TSSOP−14* 2500 / Tape & Reel


(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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40
MC74HC04A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20A 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20A 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20A 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 A
Current (per Package) Iout = 0A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55
4.5 15 19 22
6.0 13 16 19
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Inverter)* 20 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
41
MC74HC04A

tf tr
VCC
90%
INPUT A 50%
10% GND
tPLH tPHL

90%
OUTPUT Y 50%
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A Y

Figure 3. Expanded Logic Diagram


(1/6 of the Device Shown)

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42
MC74HC08A

Quad 2−Input AND Gate


High−Performance Silicon−Gate CMOS
The MC74HC08A is identical in pinout to the LS08. The device
inputs are compatible with Standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
http://onsemi.com
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL MARKING
DIAGRAMS
• Operating Voltage Range: 2 to 6V 14
• Low Input Current: 1µA PDIP−14
MC74HC08AN
• High Noise Immunity Characteristic of CMOS Devices N SUFFIX
CASE 646 AWLYYWW
• In Compliance With the JEDEC Standard No. 7A Requirements 1
• Chip Complexity: 24 FETs or 6 Equivalent Gates 14
SOIC−14
HC08A
LOGIC DIAGRAM D SUFFIX
AWLYWW
CASE 751A
1 1
A1 3 14
2 Y1
B1 HC
TSSOP−14
4 DT SUFFIX 08A
A2 6 CASE 948G ALYW
5 Y2
B2 1
Y = AB
9 A = Assembly Location
A3 8 WL or L = Wafer Lot
10 Y3
B3 YY or Y = Year
WW or W = Work Week
12
A4 11
13 Y4 FUNCTION TABLE
B4
Inputs Output
PIN 14 = VCC
PIN 7 = GND A B Y
L L L
Pinout: 14−Lead Packages (Top View) L H L
H L L
VCC B4 A4 Y4 B3 A3 Y3
H H H
14 13 12 11 10 9 8

ORDERING INFORMATION
Device Package Shipping
1 2 3 4 5 6 7
MC74HC08AN PDIP−14 2000 / Box
A1 B1 Y1 A2 B2 Y2 GND
MC74HC08AD SOIC−14 55 / Rail
MC74HC08ADR2 SOIC−14 2500 / Reel
MC74HC08ADT TSSOP−14 96 / Rail
MC74HC08ADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 43 Publication Order Number:


March, 2000 − Rev. 8 MC74HC08A/D
MC74HC08A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

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44
MC74HC08A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 µA
Current (per Package) Iout = 0µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55
4.5 15 19 22
6.0 13 16 19
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

CPD Power Dissipation Capacitance (Per Buffer)* 20 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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45
MC74HC08A

tr tf
VCC
90%
INPUT 50%
A OR B
10% GND

tPLH tPHL

90%
OUTPUT Y 50%
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A
Y
B

Figure 3. Expanded Logic Diagram


(1/4 of the Device)

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46
MC74HC125A,
MC74HC126A

Quad 3−State Noninverting


Buffers
High−Performance Silicon−Gate CMOS
The MC74HC125A and MC74HC126A are identical in pinout to http://onsemi.com
the LS125 and LS126. The device inputs are compatible with standard MARKING
CMOS outputs; with pullup resistors, they are compatible with DIAGRAMS
LSTTL outputs. 14
The HC125A and HC126A noninverting buffers are designed to be PDIP−14
used with 3−state memory address drivers, clock drivers, and other N SUFFIX MC74HC12xAN
bus−oriented systems. The devices have four separate output enables CASE 646 AWLYYWW
that are active−low (HC125A) or active−high (HC126A). 1

• Output Drive Capability: 15 LSTTL Loads 14

• Outputs Directly Interface to CMOS, NMOS, and TTL


SOIC−14
D SUFFIX
HC12xA
• Operating Voltage Range: 2.0 to 6.0 V CASE 751A
AWLYWW

• Low Input Current: 1.0 µA 1


• High Noise Immunity Characteristic of CMOS Devices
14

• In Compliance with the Requirements Defined by JEDEC Standard TSSOP−14 HC


DT SUFFIX 12xA
No. 7A ALYW
CASE 948G
• Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM 1
HC125A HC126A A = Assembly Location
Active−Low Output Enables Active−High Output Enables WL or L = Wafer Lot
YY or Y = Year
2 3 2 3 WW or W = Work Week
A1 Y1 A1 Y1
PIN ASSIGNMENT
1 1
OE1 OE1
OE1 1 14 VCC
5 6 5 6
A2 Y2 A2 Y2 A1 2 13 OE4

4 4 Y1 3 12 A4
OE2 OE2
OE2 4 11 Y4
9 8 Y3 9 8 Y3
A3 A3 A2 5 10 OE3
Y2 6 9 A3
10 10
OE3 OE3 GND 7 8 Y3
12 11 12 11
A4 Y4 A4 Y4

13 13
OE4 OE4

PIN 14 = VCC
PIN 7 = GND ORDERING INFORMATION
FUNCTION TABLE Device Package Shipping
HC125A HC126A MC74HC12xAN PDIP−14 2000 / Box
Inputs Output Inputs Output MC74HC12xAD SOIC−14 55 / Rail
A OE Y A OE Y
MC74HC12xADR2 SOIC−14 2500 / Reel
H L H H H H
L L L L H L MC74HC12xADT TSSOP−14 96 / Rail
X H Z X L Z MC74HC12xADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 47 Publication Order Number:


March, 2000 − Rev. 9 MC74HC125A/D
MC74HC125A, MC74HC126A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
± 20 voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin mA
voltages to this high−impedance cir-
± 35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin mA cuit. For proper operation, Vin and
ICC DC Supply Current, VCC and GND Pins ± 75 mA Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
range GND  (Vin or Vout)  VCC.
PD Power Dissipation in Still Air Plastic DIP† 750 mW

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
SOIC Package† 500 tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TSSOP Package† 450 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature – 65 to + 150 C Unused outputs must be left open.
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: – 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage 0 VCC V
(Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎ
Input Rise and Fall Time

ÎÎÎÎÎ
ÎÎÎ
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V
Voltage |Iout|  20 µA 3.0 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH
|Iout|  20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH |Iout|  3.6 mA
|Iout|  6.0 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.2
3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 µA 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  3.6 mA 3.0 0.26 0.33 0.4
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.4

http://onsemi.com
48
MC74HC125A, MC74HC126A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
µA

(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A to Output Y 2.0 90 115 135 ns
tPHL (Figures 1 and 3) 3.0 36 45 60

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 18 23 27

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 15 20 23

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to Y 2.0 120 150 180 ns
tPHZ (Figures 2 and 4) 3.0 45 60 80

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 24 30 36
6.0 20 26 31

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to Y

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
2.0
3.0
90
36
115
45
135
60
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 18 23 27
6.0 15 20 23

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
60
22
75
28
90
34
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance


10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Buffer)* 30 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
49
MC74HC125A, MC74HC126A

SWITCHING WAVEFORMS

VCC
OE (HC125A) 50%
tr tf GND
VCC
90% VCC
INPUT A 50%
10% OE (HC126A) 50%
GND
tPHL GND
tPLH
OUTPUT Y 90% tPZL tPLZ
HIGH
50%
10% IMPEDANCE
OUTPUT Y 50%
10% VOL
tTLH tTHL tPZH tPHZ
90% VOH
OUTPUT Y 50% HIGH
Figure 1.
IMPEDANCE
Figure 2.

TEST POINT TEST POINT


CONNECT TO VCC WHEN
1 kΩ
OUTPUT OUTPUT TESTING tPLZ AND tPZL.
DEVICE CONNECT TO GND WHEN
DEVICE UNDER
UNDER TESTING tPHZ and tPZH.
CL* TEST CL *
TEST

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Test Circuit Figure 4. Test Circuit

VCC

OE

A Y

HC125A
(1/4 OF THE DEVICE)
VCC

OE

A Y

HC126A
(1/4 OF THE DEVICE)

http://onsemi.com
50
MC74HC132A

Quad 2−Input NAND Gate


with Schmitt−Trigger Inputs
High−Performance Silicon−Gate CMOS
The MC74HC132A is identical in pinout to the LS132. The device http://onsemi.com
inputs are compatible with standard CMOS outputs; with pull−up
resistors, they are compatible with LSTTL outputs. MARKING
The HC132A can be used to enhance noise immunity or to square up DIAGRAMS
slowly changing waveforms.
14
Features PDIP−14
MC74HC132AN

N SUFFIX
Output Drive Capability: 10 LSTTL Loads CASE 646 AWLYYWW
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 A 14
• High Noise Immunity Characteristic of CMOS Devices SOIC−14
HC132A
D SUFFIX
• In Compliance with the Requirements as Defined by JEDEC CASE 751A
AWLYWW
Standard No. 7A 1
• Chip Complexity: 72 FETs or 18 Equivalent Gates
• Pb−Free Packages are Available* 14

TSSOP−14 HC
DT SUFFIX 132A
CASE 948G ALYW

A1 1 14 VCC 1
B1 2 13 B4
Y1 3 12 A4 A = Assembly Location
L, WL = Wafer Lot
A2 4 11 Y4 Y, YY = Year
B2 5 10 B3 W, WW = Work Week

Y2 6 9 A3
GND 7 8 Y3 FUNCTION TABLE

Inputs Output
Figure 1. Pin Assignment A B Y
L L H
L H H
H L H
H H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 52 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2005 51 Publication Order Number:


January, 2005 − Rev. 10 MC74HC132A/D
MC74HC132A

1
A1
3
Y1
2
B1

A2 4

6
Y2
5
B2
Y = AB
9
A3
8
Y3
10
B3

A4 12
11
Y4
13
B4
PIN 14 = VCC
PIN 7 = GND

Figure 2. Logic Diagram

ORDERING INFORMATION
Device Order N mber
Number Package Shipping†
MC74HC132AN PDIP−14 2000 Units / Box
MC74HC132ANG PDIP−14 2000 Units / Box
(Pb−Free)

MC74HC132AD SOIC−14 55 Units / Rail


MC74HC132ADG SOIC−14 55 Units / Rail
(Pb−Free)

MC74HC132ADR2 SOIC−14 2500 Tape & Reel


MC74HC132ADR2G SOIC−14 2500 Tape & Reel
(Pb−Free)

MC74HC132ADT TSSOP−14* 96 Units / Rail


MC74HC132ADTR2 TSSOP−14* 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

http://onsemi.com
52
MC74HC132A

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Positive DC Supply Voltage 0.5 to 7.0 V
VIN Digital Input Voltage 0.5 to 7.0 V
VOUT DC Output Voltage Output in 3−State 0.5 to 7.0 V
High or Low State 0.5 to VCC 0.5

IIK Input Diode Current 20 mA


IOK Output Diode Current 20 mA
IOUT DC Output Current, per Pin 25 mA
ICC DC Supply Current, VCC and GND Pins 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance 14−PDIP 78 C/W
14−SOIC 125
14−TSSOP 170
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL 94 V0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 1) 2000 V
Machine Model (Note 2) 100
Charged Device Model (Note 3) 500
ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 4) 300 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
5. For high frequency or heavy load considerations, see Chapter 2the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types 55 125 C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time (Figure 3) − No Limit ns
(Note 6)
6. When VIN
0.5 VCC, ICC >> quiescent current.
7. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.

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53
MC74HC132A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VT+max ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Maximum Positive−Going
Test Conditions
VOUT = 0.1 V
V
2.0
55C to 25C
1.5
85C
1.5
125C
1.5
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Input Threshold Voltage |IOUT|  20 A 4.5 3.15 3.15 3.15
(Figure 5) 6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VT+min

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Minimum Positive−Going

ÎÎ
Input Threshold Voltage
VOUT = 0.1 V
|IOUT|  20 A
2.0
4.5
1.0
2.3
0.95
2.25
0.95
2.25
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 5) 6.0 3.0 2.95 2.95

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VT–max Maximum Negative−Going VOUT = VCC – 0.1 V 2.0 0.9 0.95 0.95 V
Input Threshold Voltage |IOUT|  20 A 4.5 2.0 2.05 2.05

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 5) 6.0 2.6 2.65 2.65

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VT–min Minimum Negative−Going VOUT = VCC – 0.1 V 2.0 0.3 0.3 0.3 V
Input Threshold Voltage |IOUT|  20 A 4.5 0.9 0.9 0.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 5) 6.0 1.2 1.2 1.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VHmax Maximum Hysteresis VOUT = 0.1 V or VCC – 0.1 V 2.0 1.2 1.2 1.2 V
|IOUT|  20 A

ÎÎ
Voltage 4.5 2.25 2.25 2.25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(Note 8)
(Figure 5) 6.0 3.0 3.0 3.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VHmin

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
(Note 8) ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Voltage
ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 5) ÎÎÎÎ
Minimum Hysteresis

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
VOUT = 0.1 V or VCC – 0.1 V
|IOUT|  20 A
2.0
4.5
6.0
0.2
0.4
0.5
0.2
0.4
0.5
0.2
0.4
0.5
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Minimum High−Level

ÎÎÎÎ
Output Voltage

ÎÎÎÎÎÎ
ÎÎ
VIN  VT−min or VT+max
|IOUT|  20 A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
VIN  −VT−min or VT+max
|IOUT|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
|IOUT|  5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOL Maximum Low−Level VIN ≥ VT+max 2.0 0.1 0.1 0.1 V
Output Voltage |IOUT|  20 A 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VIN ≥ VT+max |IOUT|  4.0 mA 4.5 0.26 0.33 0.4
|IOUT|  5.2 mA 6.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
IIN

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎÎ
Current
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VIN = VCC or GND 6.0 0.1 1.0 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Maximum Quiescent

ÎÎÎÎ
Supply Current
(per Package) ÎÎ
ÎÎÎÎÎÎ
VIN = VCC or GND
IOUT = 0 A
6.0 1.0 10 40 A

8. VHmin (VT+min)  (VT−max); VHmax = (VT+max)  (VT−min).


9. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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54
MC74HC132A

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH, ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ
ÎÎÎÎ
ÎÎ
Parameter
Maximum Propagation Delay, Input A or B to Output Y
V
2.0
55C to 25C
125
85C
155
125C
190
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ ÎÎ
ÎÎÎÎ
tPHL (Figures 3 and 4) 4.5 25 31 38
6.0 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ
Maximum Output Transition Time, Any Output

ÎÎ
ÎÎÎÎ
(Figures 3 and 4)
2.0
4.5
75
15
95
19
110
22
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
6.0 13 16 19
Cin Maximum Input Capacitance — 10 10 10 pF
10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (per Gate) (Note 11) 24 pF
11. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

TEST POINT
tr tf
VCC OUTPUT
90%
INPUT 50% DEVICE
A OR B 10% GND UNDER
tPHL tPLH CL*
TEST
90%
Y 50%
10%
tTHL tTLH
*Includes all probe and jig capacitance

Figure 3. Switching Waveforms Figure 4. Test Circuit

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55
MC74HC132A

VT, TYPICAL INPUT THRESHOLD VOLTAGE


4

3
VHtyp

(VOLTS)
2

2 3 4 5 6
VCC, POWER SUPPLY VOLTAGE (VOLTS)
VHtyp = (VT+ typ) − (VT− typ)
Figure 5. Typical Input Threshold, VT+, VT− Versus Power Supply Voltage

VCC VCC
VH VH
VT+ VIN VT+
VIN VT−
VT−

GND GND

VOH VOH

VOUT VOUT

VOL VOL
VCC

VOUT
VIN
(a)A SCHMITT TRIGGER SQUARES UP INPUTS (b)A SCHMITT TRIGGER OFFERS MAXIMUM
(a)WITH SLOW RISE AND FALL TIMES NOISE IMMUNITY

Figure 6. Typical Schmitt−Trigger Applications

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56
MC74HC132A

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57
MC74HC138A

1−of−8 Decoder/
Demultiplexer
High−Performance Silicon−Gate CMOS
The MC74HC138A is identical in pinout to the LS138. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs. http://onsemi.com
The HC138A decodes a three−bit Address to one−of−eight
MARKING
active−low outputs. This device features three Chip Select inputs, two
DIAGRAMS
active−low and one active−high to facilitate the demultiplexing,
16
cascading, and chip−selecting functions. The demultiplexing function
PDIP−16
is accomplished by using the Address inputs to select the desired N SUFFIX MC74HC138AN
16 AWLYYWW
device output; one of the Chip Selects is used as a data input while the CASE 648
other Chip Selects are held in their active states. 1
1
• Output Drive Capability: 10 LSTTL Loads 16
• Outputs Directly Interface to CMOS, NMOS and TTL SO−16
HC138A
• Operating Voltage Range: 2.0 to 6.0 V 16
D SUFFIX
CASE 751B
AWLYWW
• Low Input Current: 1.0 µA 1
1
• High Noise Immunity Characteristic of CMOS Devices 16
• In Compliance with the Requirements Defined by JEDEC Standard TSSOP−16 HC
No. 7A 16 DT SUFFIX 138A
• Chip Complexity: 100 FETs or 29 Equivalent Gates 1
CASE 948F ALYW

LOGIC DIAGRAM 1
1 15 A = Assembly Location
A0 Y0 WL = Wafer Lot
ADDRESS 14
2 Y1 YY = Year
INPUTS A1 13
Y2 WW = Work Week
3 12
A2 Y3 ACTIVE−LOW
11 OUTPUTS
Y4 PIN ASSIGNMENT
10
Y5
9 A0 1 16 VCC
Y6
7
Y7 A1 2 15 Y0
A2 3 14 Y1
6
CS1
CHIP− PIN 16 = VCC CS2 4 13 Y2
4
SELECT CS2 PIN 8 = GND
CS3 5 12 Y3
INPUTS 5
CS3 CS1 6 11 Y4
FUNCTION TABLE Y7 7 10 Y5
Inputs Outputs GND 8 9 Y6
CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
X X H X X X H H H H H H H H
X H X X X X H H H H H H H H
L X X X X X H H H H H H H H
H L L L L L L H H H H H H H ORDERING INFORMATION
H L L L L H H L H H H H H H
Device Package Shipping
H L L L H L H H L H H H H H
H L L L H H H H H L H H H H MC74HC138AN PDIP−16 2000 / Box
H L L H L L H H H H L H H H MC74HC138AD SOIC−16 48 / Rail
H L L H L H H H H H H L H H
MC74HC138ADR2 SOIC−16 2500 / Reel
H L L H H L H H H H H H L H
H L L H H H H H H H H H H L MC74HC138ADT TSSOP−16 96 / Rail
H = high level (steady state); L = low level (steady state); X = don’t care MC74HC138ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 58 Publication Order Number:


March, 2000 − Rev. 7 MC74HC138A/D
MC74HC138A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 25 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
260
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 .W/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
Î ÎÎ
Symbol

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎ
Parameter
DC Supply Voltage (Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
Operating Temperature, All Package Types
0
– 55
VCC
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎ
Input Rise and Fall Time

ÎÎÎÎÎ
ÎÎÎ
(Figure 2)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC −55C to
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
|Iout|  4.0 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.20
3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.20

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59
MC74HC138A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC −55C to
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V Unit
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.40
|Iout|  4.0 mA 4.5 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current
µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160
Current (per Package) Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ Parameter
VCC
V
−55C to
25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A to Output Y 2.0 135 170 205 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 1 and 4) 3.0 90 125 165
4.5 27 34 41

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 23 29 35

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, CS1 to Output Y 2.0 110 140 165 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 2 and 4) 3.0 85 100 125
4.5 22 28 33

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, CS2 or CS3 to Output Y 2.0 120 150 180 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 3 and 4) 3.0 90 120 150
4.5 24 30 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 20 26 31

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 2 and 4) 3.0 30 40 55

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
15
13
19
16
22
19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance — 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 55 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
60
MC74HC138A

SWITCHING WAVEFORMS
tr tf
VALID VALID
VCC
VCC INPUT CS1 90%
INPUT A 50% 50%
10% GND
GND
tPHL tPLH
tPLH tPHL
90%
50%
OUTPUT Y 50% OUTPUT Y 10%
tTHL tTLH

Figure 1. Figure 2.

TEST POINT
tf tr
VCC OUTPUT
90%
INPUT 50% DEVICE
CS2, CS3 10% GND UNDER
tPHL tPLH TEST CL*
90%
50%
OUTPUT Y 10%
tTHL tTLH
*Includes all probe and jig capacitance
Figure 3.
Figure 4. Test Circuit

PIN DESCRIPTIONS

ADDRESS INPUTS Address inputs. For any other combination of CS1, CS2, and
A0, A1, A2 (Pins 1, 2, 3) CS3, the outputs are at a logic high.
Address inputs. These inputs, when the chip is selected,
OUTPUTS
determine which of the eight outputs is active−low.
Y0 − Y7 (Pins 15, 14, 13, 12, 11, 10, 9, 7)
CONTROL INPUTS Active−low Decoded outputs. These outputs assume a
CS1, CS2, CS3 (Pins 6, 4, 5) low level when addressed and the chip is selected. These
Chip select inputs. For CS1 at a high level and CS2, CS3 outputs remain high when not addressed or the chip is not
at a low level, the chip is selected and the outputs follow the selected.

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61
MC74HC138A

EXPANDED LOGIC DIAGRAM

15
Y0

14
Y1

13
1 Y2
A0

12
2 Y3
A1

11
Y4
3
A2

10
Y5
5
CS3
4 9
CS2 Y6

7
Y7

6
CS1

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62
MC74HC139A

Dual 1−of−4 Decoder/


Demultiplexer
High−Performance Silicon−Gate CMOS
The MC74HC139A is identical in pinout to the LS139. The device
inputs are compatible with standard CMOS outputs; with pull−up http://onsemi.com
resistors, they are compatible with LSTTL outputs.
This device consists of two independent 1−of−4 decoders, each of MARKING
which decodes a two−bit Address to one−of−four active−low outputs. DIAGRAMS
Active−low Selects are provided to facilitate the demultiplexing and
cascading functions. The demultiplexing function is accomplished by 16
using the Address inputs to select the desired device output, and 16
utilizing the Select as a data input. 1
MC74HC139AN
AWLYYWW
• Output Drive Capability: 10 LSTTL Loads PDIP−16
N SUFFIX 1
• Outputs Directly Interface to CMOS, NMOS and TTL CASE 648
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
16
• In Compliance with the Requirements Defined by JEDEC Standard 16
No. 7A 1 HC139A
AWLYWW
• Chip Complexity: 100 FETs or 25 Equivalent Gates SO−16
D SUFFIX 1
CASE 751B

SELECTa 1 16 VCC
A0a 2 15 SELECTb
A1a 3 14 A0b 16
16
Y0a 4 13 A1b HC
1
139A
Y1a 5 12 Y0b
TSSOP−16 ALYW
Y2a 6 11 Y1b DT SUFFIX
CASE 948F 1
Y3a 7 10 Y2b
GND 8 9 Y3b

Figure 1. Pin Assignment A = Assembly Location


L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

FUNCTION TABLE

Inputs Outputs
ORDERING INFORMATION
Select A1 A0 Y0 Y1 Y2 Y3
Device Package Shipping
H X X H H H H
L L L L H H H MC74HC139AN PDIP−16 2000/Box
L L H H L H H MC74HC139AD SOIC−16 48/Rail
L H L H H L H
L H H H H H L MC74HC139ADR2 SOIC−16 2500/Reel
MC74HC139ADT TSSOP−16 96/Rail
X = don’t care
MC74HC139ADTR2 TSSOP−16 2500/Reel

 Semiconductor Components Industries, LLC, 2001 63 Publication Order Number:


June, 2001 − Rev. 8 MC74HC139A/D
MC74HC139A

2 4
ADDRESS A0a Y0a
INPUTS 3 5
A1a Y1a ACTIVE−LOW
6 OUTPUTS
Y2a
7
Y3a

1 PIN 16 = VCC
SELECTa PIN 8 = GND

14 12
ADDRESS A0b Y0b
INPUTS 13 11
A1b Y1b ACTIVE−LOW
10 OUTPUTS
Y2b
9
Y3b

15
SELECTb

Figure 2. Logic Diagram

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64
MC74HC139A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) 0.5 to 7.0 V
VIN DC Input Voltage (Referenced to GND) 1.5 to VCC 1.5 V
VOUT DC Output Voltage (Referenced to GND) (Note 2) 0.5 to VCC 0.5 V
IIN DC Input Current, per Pin 20 mA
IOUT DC Output Current, per Pin 25 mA
ICC DC Supply Current, VCC Pin 50 mA
IGND DC Ground Current per Ground Pin 50 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 78 C/W
SOIC 112
TSSOP 148
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 3) 2000 V
Machine Model (Note 4) 200
Charged Device Model (Note 5) 1000
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA

1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. IO absolute maximum rating must be observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
7. For high frequency or heavy load considerations, see Chapter 2the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIN, VOUT

ÎÎÎÎ
TA ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
(Referenced to GND) 0
55
VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 3)
ÎÎÎ
Input Rise and Fall Time

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

8. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.

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65
MC74HC139A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIH ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Minimum High−Level Input
Test Conditions
VOUT = 0.1 V or VCC 0.1 V
V
2.0
55C to 25C
1.5
85C
1.5
125C
1.5
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Voltage |IOUT|  20 A 4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Voltage ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Low−Level Input

ÎÎ
VOUT = 0.1 V or VCC 0.1 V
|IOUT|  20 A
2.0
4.5
0.5
1.35
0.5
1.35
0.5
1.35
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Output VIN = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |IOUT|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VIN = VIH or VIL |IOUT|  4.0 mA 4.5 3.98 3.84 3.70
|IOUT|  5.2 mA 6.0 5.48 5.34 5.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Voltage ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Low−Level Output

ÎÎ
VIN = VIH or VIL
|IOUT|  20 A
2.0
4.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 0.1 0.1 0.1
|IOUT|  4.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VIN = VIH or VIL 4.5 0.26 0.33 0.40
|IOUT|  5.2 mA 6.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IIN

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎÎ
Current

ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VIN = VCC or GND 6.0 0.1 1.0 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ICC Maximum Quiescent Supply VIN = VCC or GND 6.0 4 40 160 A
Current (per Package) IOUT = 0 A

9. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ Parameter V 55C to 25C 85C 125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
(Figures 1 and 3)
ÎÎ
Maximum Propagation Delay, Select to Output Y

ÎÎ
2.0
4.5
6.0
115
23
20
145
29
25
175
35
30
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
Maximum Propagation Delay, Input A to Output Y

ÎÎÎ
ÎÎÎÎ
(Figures 2 and 3)

ÎÎ
2.0
4.5
115
23
145
29
175
35
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 20 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 3) 4.5 15 19 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Cin Maximum Input Capacitance − 10 10 10 pF

10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Decoder) (Note 11) 55 pF

11. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f  I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
66
MC74HC139A

tf tr
VCC VALID VALID
90% VCC
50%
SELECT 10% GND INPUT A 50%
tPHL tPLH GND
tPLH tPHL
90%
50%
OUTPUT Y 10% OUTPUT Y 50%
tTHL tTLH

Figure 3. Switching Waveform Figure 4. Switching Waveform

TEST POINT

OUTPUT
DEVICE
UNDER
CL*
TEST

* Includes all probe and jig capacitance

Figure 5. Test Circuit

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67
MC74HC139A

PIN DESCRIPTIONS

ADDRESS INPUTS inputs. A high level on this input forces all outputs to a high
level.
A0a, A1a, A0b, A1b (Pins 2, 3, 14, 13)
Address inputs. These inputs, when the respective 1−of−4 OUTPUTS
decoder is enabled, determine which of its four active−low
Y0a − Y3a, Y0b − Y3b (Pins 4 − 7, 12, 11, 10, 9)
outputs is selected.
Active−low outputs. These outputs assume a low level
CONTROL INPUTS when addressed and the appropriate Select input is active.
These outputs remain high when not addressed or the
Selecta, Selectb (Pins 1, 15)
appropriate Select input is inactive.
Active−low select inputs. For a low level on this input, the
outputs for that particular decoder follow the Address

SELECT
Y0

Y1
A0

Y2

Y3
A1

Figure 6. Expanded Logic Diagram


(1/2 of Device)

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68
MC74HC14A

Hex Schmitt−Trigger
Inverter
High−Performance Silicon−Gate CMOS
The MC74HC14A is identical in pinout to the LS14, LS04 and the
HC04. The device inputs are compatible with Standard CMOS http://onsemi.com
outputs; with pullup resistors, they are compatible with LSTTL
outputs. MARKING
The HC14A is useful to “square up” slow input rise and fall times. DIAGRAMS
Due to hysteresis voltage of the Schmitt trigger, the HC14A finds 14
applications in noisy environments. PDIP−14
N SUFFIX MC74HC14AN
CASE 646 AWLYYWW
Features
• Pb−Free Packages are Available*
1
14
• Output Drive Capability: 10 LSTTL Loads SOIC−14
• Outputs Directly Interface to CMOS, NMOS and TTL D SUFFIX
HC14A
AWLYWW
• Operating Voltage Range: 2.0 to 6.0 V
CASE 751A


1
Low Input Current: 1.0 A 14
• High Noise Immunity Characteristic of CMOS Devices
HC
TSSOP−14
• In Compliance With the JEDEC Standard No. 7.0 A Requirements DT SUFFIX 14A
• Chip Complexity: 60 FETs or 15 Equivalent Gates CASE 948G ALYW

LOGIC DIAGRAM 1

1 2 A = Assembly Location
A1 Y1
WL or L = Wafer Lot
YY or Y = Year
3 4 WW or W = Work Week
A2 Y2

5 6 FUNCTION TABLE
A3 Y3
Inputs Outputs
Y=A
9 8 A Y
A4 Y4 Pin 14 = VCC
Pin 7 = GND L H
H L
11 10
A5 Y5

13 12
A6 Y6 ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 70 of this data sheet.
Pinout: 14−Lead Packages (Top View)
VCC A6 Y6 A5 Y5 A4 Y4
14 13 12 11 10 9 8 *For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

1 2 3 4 5 6 7
A1 Y1 A2 Y2 A3 Y3 GND

 Semiconductor Components Industries, LLC, 2004 69 Publication Order Number:


December, 2004 − Rev. 9 MC74HC14A/D
MC74HC14A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature Range – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to 0 VCC V
GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Operating Temperature Range, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Input Rise/Fall Time

ÎÎÎÎ
ÎÎÎ
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
0
0
No Limit*
No Limit*
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC = 6.0 V 0 No Limit*
*When Vin = 50% VCC, ICC > 1mA

ORDERING INFORMATION
Device Package Shipping†
MC74HC14AN PDIP−14 2000 Units / Box
MC74HC14ANG PDIP−14 2000 Units / Box
(Pb−Free)

MC74HC14AD SOIC−14 55 Units / Rail


MC74HC14ADG SOIC−14 55 Units / Rail
(Pb−Free)

MC74HC14ADR2 SOIC−14 2500 Units / Reel


MC74HC14ADR2G SOIC−14 2500 Units / Reel
(Pb−Free)

MC74HC14ADT TSSOP−14* 96 Units / Rail


MC74HC14ADTR2 TSSOP−14* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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70
MC74HC14A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VT+ max Maximum Positive−Going Input Vout = 0.1V 2.0 1.50 1.50 1.50 V
Threshold Voltage |Iout| ≤ 20A 3.0 2.15 2.15 2.15
(Figure 3) 4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VT+ min Minimum Positive−Going Input Vout = 0.1V 2.0 1.0 0.95 0.95 V
Threshold Voltage |Iout| ≤ 20A 3.0 1.5 1.45 1.45
(Figure 3) 4.5 2.3 2.25 2.25
6.0 3.0 2.95 2.95
VT− max Maximum Negative−Going Input Vout = VCC − 0.1V 2.0 0.9 0.95 0.95 V
Threshold Voltage |Iout| ≤ 20A 3.0 1.4 1.45 1.45
(Figure 3) 4.5 2.0 2.05 2.05
6.0 2.6 2.65 2.65
VT− min Minimum Negative−Going Input Vout = VCC − 0.1V 2.0 0.3 0.3 0.3 V
Threshold Voltage |Iout| ≤ 20A 3.0 0.5 0.5 0.5
(Figure 3) 4.5 0.9 0.9 0.9
6.0 1.2 1.2 1.2
VHmax Maximum Hysteresis Voltage Vout = 0.1V or VCC − 0.1V 2.0 1.20 1.20 1.20 V
Note 2 (Figure 3) |Iout| ≤ 20A 3.0 1.65 1.65 1.65
4.5 2.25 2.25 2.25
6.0 3.00 3.00 3.00
VHmin Minimum Hysteresis Voltage Vout = 0.1V or VCC − 0.1V 2.0 0.20 0.20 0.20 V
Note 2 (Figure 3) |Iout| ≤ 20A 3.0 0.25 0.25 0.25
4.5 0.40 0.40 0.40
6.0 0.50 0.50 0.50
VOH Minimum High−Level Output Vin ≤ VT− min 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20A 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin ≤ VT− min |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin ≥ VT+ max 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin ≥ VT+ max |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 A
Current (per Package) Iout = 0A
12. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
13. VHmin > (VT+ min) − (VT− max); VHmax = (VT+ max) − (VT− min).

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71
MC74HC14A

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55
4.5 15 19 22
6.0 13 16 19
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Inverter)* 22 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

tf tr
VCC
90%
INPUT A 50%
10% GND
tPLH tPHL

90%
OUTPUT Y 50%
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

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72
MC74HC14A

VT , TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS


4

3
(VT+) VHtyp

2
(VT−)

2 3 4 5 6
VCC, POWER SUPPLY VOLTAGE (VOLTS)

VHtyp = (VT+ typ) − (VT− typ)

Figure 3. Typical Input Threshold, VT+, VT− versus Power Supply Voltage

A Y

(a) A Schmitt−Trigger Squares Up Inputs With Slow Rise and Fall Times (b) A Schmitt−Trigger Offers Maximum Noise Immunity

VCC VCC
VH VH
VT+ VT+
Vin Vin
VT− VT−

GND GND

VOH VOH

Vout Vout

VOL VOL

Figure 4. Typical Schmitt−Trigger Applications

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73
MC74HC157A

Quad 2−Input Data


Selectors / Multiplexers
High−Performance Silicon−Gate CMOS
The MC74HC157A is identical in pinout to the LS157. The device
inputs are compatible with standard CMOS outputs; with pullup http://onsemi.com
resistors, they are compatible with LSTTL outputs.
This device routes 2 nibbles (A or B) to a single port (Y) as MARKING
determined by the Select input. The data is presented at the outputs in DIAGRAMS
noninverted form. A high level on the Output Enable input sets all four 16
Y outputs to a low level. PDIP−16
N SUFFIX MC74HC157AN
• Output Drive Capability: 10 LSTTL Loads
16
CASE 648
AWLYYWW

• Outputs Directly Interface to CMOS, NMOS, and TTL


1
1
• Operating Voltage Range: 2.0 to 6.0 V 16

• Low Input Current: 1.0 µA


SO−16
D SUFFIX
HC157A
• High Noise Immunity Characteristic of CMOS Devices 16
CASE 751B
AWLYWW


1
In Compliance with the Requirements Defined by JEDEC Standard 1
No. 7A 16

• Chip Complexity: 82 FETs or 20.5 Equivalent Gates TSSOP−16 HC


16 DT SUFFIX 157A
LOGIC DIAGRAM CASE 948F ALYW
1
2 1
A0
5 A = Assembly Location
NIBBLE A1 WL = Wafer Lot
11 YY = Year
A INPUTS A2 4
Y0
14 WW = Work Week
A3 7
Y1
9 DATA
3 Y2 OUTPUTS PIN ASSIGNMENT
B0 12
6 Y3
B1 SELECT 1 16 VCC
NIBBLE
10 OUTPUT
B INPUTS B2 A0 2 15
13 ENABLE
B3 PIN 16 = VCC
PIN 8 = GND B0 3 14 A3
Y0 4 13 B3
1
SELECT A1 5 12 Y3
OUTPUT 15
ENABLE B1 6 11 A2
Y1 7 10 B2
FUNCTION TABLE
GND 8 9 Y2
Inputs
Output Outputs
Enable Select Y0 − Y3
H X L
L L A0 −A3
L H B0 −B3 ORDERING INFORMATION
Device Package Shipping
X = don’t care
A0 − A3, B0 − B3 = the levels of the MC74HC157AN PDIP−16 2000 / Box
respective Data−Word Inputs.
MC74HC157AD SOIC−16 48 / Rail
MC74HC157ADR2 SOIC−16 2500 / Reel
MC74HC157ADT TSSOP−16 96 / Rail
MC74HC157ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 74 Publication Order Number:


March, 2000 − Rev. 8 MC74HC157A/D
MC74HC157A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VCC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
(Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Î
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
4.5
1.5
2.1
3.15
1.5
2.1
3.15
1.5
2.1
3.15
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Input Vout = 0.1 V
|Iout|  20 µA
6.0
2.0
4.2
0.5
4.2
0.5
4.2
0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 µA 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH |Iout|  2.4 mA
|Iout|  6.0 mA
6.0
3.0
5.9
2.48
5.9
2.34
5.9
2.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.98 3.84 3.7
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VOL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIL
|Iout|  20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

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75
MC74HC157A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
µA

(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 105 130 160 ns
tPHL (Figures 1 and 4) 3.0 65 85 115

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 21 26 32

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 18 22 27

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Select to Output Y 2.0 110 140 165 ns
tPHL (Figures 2 and 4) 3.0 70 90 115

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to Output Y

ÎÎÎÎ
ÎÎÎ
(Figures 3 and 4)
2.0
3.0
100
60
125
80
150
110
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 20 25 30
6.0 17 21 26

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
75
27
95
32
110
36
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance — 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 33 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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76
MC74HC157A

PIN DESCRIPTIONS

INPUTS The data present on these pins is in its noninverted form. For
A0, A1, A2, A3 (Pins 2, 5, 11, 14) the Output Enable input at a high level, the outputs are at a
Nibble A inputs. The data present on these pins is low level.
transferred to the outputs when the Select input is at a low
CONTROL INPUTS
level and the Output Enable input is at a low level. The data Select (Pin 1)
is presented to the outputs in noninverted form.
Nibble select. This input determines the data word to be
B0, B1, B2, B3 (Pins 3, 6, 10, 13) transferred to the outputs. A low level on this input selects
Nibble B inputs. The data present on these pins is the A inputs and a high level selects the B inputs.
transferred to the outputs when the Select input is at a high Output Enable (Pin 15)
level and the Output Enable input is at a low level. The data
is presented to the outputs in noninverted form. Output Enable input. A low level on this input allows the
selected input data to be presented at the outputs. A high
OUTPUTS level on this input sets all outputs to a low level.
Y0, Y1, Y2, Y3 (Pins 4, 7, 9, 12)
Data outputs. The selected input Nibble is presented at
these outputs when the Output Enable input is at a low level.

SWITCHING WAVEFORMS

tr tf tr tf
VCC VCC
90% SELECT 90%
INPUT A OR B 50% 50%
10% GND 10% GND
tPLH tPHL tPLH tPHL
90% OUTPUT Y 90%
OUTPUT Y 50% 50%
10% 10%
tTLH tTHL tTLH tTHL

Figure 1. HC157A Figure 2. Y versus Select, Noninverted

tr tf
VCC
OUTPUT 90%
50%
ENABLE 10% GND
tPHL tPLH
90%
OUTPUT Y 50%
10%
tTHL tTLH

Figure 3. HC157A

TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 4. Test Circuit

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77
MC74HC157A

EXPANDED LOGIC DIAGRAM

2
A0
4
3 Y0
B0
5
A1
7
6 Y1
B1
NIBBLE
11 DATA
OUTPUTS A2 OUTPUTS
10 9 Y2
B2
14
A3
12 Y3
13
B3
15
OUTPUT ENABLE
1
SELECT

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78
MC74HC161A,
MC74HC163A

Presettable Counters
High−Performance Silicon−Gate CMOS
The MC74HC161A and HC163A are identical in pinout to the
LS161 and LS163. The device inputs are compatible with standard
http://onsemi.com
CMOS outputs; with pull−up resistors, they are compatible with
LSTTL outputs.
MARKING
The HC161A and HC163A are programmable 4−bit binary counters DIAGRAMS
with asynchronous and synchronous reset, respectively.
16
• Output Drive Capability: 10 LSTTL Loads 16

• Outputs Directly Interface to CMOS, NMOS, and TTL 1 MC74HC16xAN


AWLYYWW
• Operating Voltage Range: 2.0 to 6.0 V PDIP−16
• Low Input Current: 1.0 A N SUFFIX
CASE 648
1

• High Noise Immunity Characteristic of CMOS Devices


• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A 16
• Chip Complexity: 192 FETs or 48 Equivalent Gates
16
HC16xA
1
AWLYWW
SO−16
D SUFFIX 1
RESET 1 16 VCC
CASE 751B
CLOCK 2 15 RIPPLE
CARRY OUT
P0 3 14 Q0 16
P1 4 13 Q1 16
HC
P2 5 12 Q2 1
16xA
TSSOP−16 ALYW
P3 6 11 Q3
DT SUFFIX
ENABLE P 7 10 ENABLE T CASE 948F 1
GND 8 9 LOAD
x = 1 or 3
A = Assembly Location
Figure 1. Pin Assignment L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

FUNCTION TABLE
ORDERING INFORMATION
Inputs Output
Clock Reset* Load Enable P Enable T Q Device Package Shipping

L X X X Reset MC74HC161AN PDIP−16 2000/Box


H L X X Load Preset Data MC74HC161AD SOIC−16 48/Rail
H H H H Count
H H L X No Count MC74HC161ADR2 SOIC−16 2500/Reel
H H X L No Count MC74HC161ADT TSSOP−16 96/Rail

*HC163A only. HC161A is an Asynchronous Reset Device MC74HC161ADTR2 TSSOP−16 2500/Reel


H = high level, L = low level, X = don’t care MC74HC163AN PDIP−16 2000/Box
MC74HC163AD SOIC−16 48/Rail
MC74HC163ADR2 SOIC−16 2500/Reel
MC74HC163ADT TSSOP−16 96/Rail
MC74HC163ADTR2 TSSOP−16 2500/Reel

 Semiconductor Components Industries, LLC, 2001 79 Publication Order Number:


June, 2001 − Rev. 9 MC74HC161A/D
MC74HC161A, MC74HC163A

3 14
P0 Q0
PRESET 4 13 BCD OR
P1 Q1
DATA BINARY
5 12
INPUTS P2 Q2 OUTPUT
6 11
P3 Q3

2 15 RIPPLE
CLOCK CARRY
OUT

1
RESET
9 PIN 16 = VCC
LOAD
PIN 8 = GND
7
COUNT ENABLE P
ENABLES 10
ENABLE T

Figure 2. Logic Diagram

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
DEVICE/MODE TABLE

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
Device
Count
Mode Reset Mode

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
HC161A Binary Asynchronous

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
HC163A Binary Synchronous

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80
MC74HC161A, MC74HC163A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VI DC Input Voltage 0.5 to VCC 0.5 V
VO DC Output Voltage (Note 2) 0.5  VO  VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 25 mA
IO DC Output Sink Current 25 mA
ICC DC Supply Current per Supply Pin 50 mA
IGND DC Ground Current per Ground Pin 50 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 78 C/W
SOIC 112
TSSOP 148
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 3) 2000 V
Machine Model (Note 4) 200
Charged Device Model (Note 5) 1000
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA
1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. IO absolute maximum rating must be observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
(Referenced to GND)
55
0 VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Input Rise and Fall Time (Figure 4)

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 3.0 V
0
0
1000
600
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400
7. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.

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81
MC74HC161A, MC74HC163A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V –55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V
Input Voltage |Iout|  20 A 3.0 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
3.15
4.2
3.15
4.2
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Vout = 0.1 V or VCC – 0.1 V 2.0 0.5 0.5 0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Input Voltage |Iout|  20 A 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VOH ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Minimum High−Level Vin = VIH or VIL
6.0

2.0
1.8

1.9
1.8

1.9
1.8

1.9 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9
Vin = VIH or VIL |Iout|  3.6 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3.0 2.48 2.34 2.2
|Iout|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Vin = VIH or VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Voltage |Iout|  20 A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  3.6 mA
|Iout|  4.0 mA
3.0
4.5
0.26
0.26
0.33
0.33
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
Leakage Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Maximum Quiescent

ÎÎÎ
Supply Current ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND
Iout = 0 A
6.0 4.0 40 160

8. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
A

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82
MC74HC161A, MC74HC163A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Î ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Symbol Parameter Figure V – 55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
fmax Maximum Clock Frequency 4, 10 2.0 6 5 4 MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(50% Duty Cycle) 3.0 15 12 10
(Note 9) 4.5 30 24 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 35 28 24

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPLH Maximum Propagation Delay, 4, 10 2.0 120 160 200 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Clock to Q 3.0 75 120 150
4.5 20 23 28

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 16 20 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPHL 4, 10 2.0 145 185 220 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
3.0 100 135 150
4.5 22 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 18 20 23

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPHL Maximum Propagation Delay, 5, 10 2.0 145 185 220 ns
Reset to Q (HC161A Only) 3.0 100 135 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
4.5
6.0
20
17
22
19
25
21

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPLH Maximum Propagation Delay, 6, 10 2.0 110 150 190 ns
Enable T to Ripple Carry Out 3.0 60 115 140

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
4.5
6.0
16
14
18
15
20
17

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPHL 6, 10 2.0 135 175 210 ns
3.0 100 130 160

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 18 20 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 15 16 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPLH Maximum Propagation Delay, 4, 10 2.0 120 160 200 ns
Clock to Ripple Carry Out 3.0 75 135 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 22 27 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 18 22 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPHL 4, 10 2.0 145 185 220 ns
3.0 100 135 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 22 28 35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 20 24 28

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tPHL Maximum Propagation Delay, 5, 10 2.0 155 190 230 ns
Reset to Ripple Carry Out 3.0 120 140 155

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(HC161A Only) 4.5 22 26 30
6.0 18 22 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ
Any Output ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Output Transition Time,

ÎÎÎ
5, 10 2.0
3.0
75
30
95
40
110
55
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Input Capacitance 4, 10 — 10 10 10
9. Applies to noncascaded/nonsynchronous clocked configurations only with synchronously cascaded counters. (1) Clock to Ripple Carry Out
pF

propagation delays. (2) Enable T or Enable P to Clock setup times and (3) Clock to Enable T or Enable P hold times determine fmax. However,
if Ripple Carry out of each stage is tied to the Clock of the next stage (nonsynchronously clocked) the fmax in the table above is applicable.
See Applications information in this data sheet.
10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Gate) (Note 11) 45 pF


11. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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83
MC74HC161A, MC74HC163A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Î ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Symbol Parameter Figure V – 55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tsu Minimum Setup Time, 8 2.0 40 60 80 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Preset Data Inputs to Clock 3.0 20 30 40
4.5 15 20 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 12 18 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tsu Minimum Setup Time, 8 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Load to Clock 3.0 25 30 40
4.5 15 20 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 12 18 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tsu Minimum Setup Time, 7 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Reset to Clock (HC163A Only) 3.0 25 30 40
4.5 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 17 23 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
tsu Minimum Setup Time, 9 2.0 80 95 110 ns
Enable T or Enable P to Clock 3.0 35 40 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
4.5
6.0
20
17
25
23
35
25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
th Minimum Hold Time, 8 2.0 3 3 3 ns
Clock to Load or Preset Data Inputs 3.0 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
4.5
6.0
3
3
3
3
3
3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
th Minimum Hold Time, 7 2.0 3 3 3 ns
Clock to Reset (HC163A Only) 3.0 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
th Minimum Hold Time, 9 2.0 3 3 3 ns
Clock to Enable T or Enable P 3.0 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 3 3 3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
trec Minimum Recovery Time, 5 2.0 80 95 110 ns
Reset Inactive to Clock (HC161A Only) 3.0 35 40 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 15 20 26

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 12 17 23

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
trec Minimum Recovery Time, 8 2.0 80 95 110 ns
Load Inactive to Clock 3.0 35 40 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 15 20 26
6.0 12 17 23

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Clock ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Minimum Pulse Width,

ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
4 2.0
3.0
60
25
75
30
90
40
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Minimum Pulse Width,

ÎÎÎ
ÎÎÎÎ
Reset (HC161A Only) ÎÎÎ
ÎÎÎ
5 2.0
3.0
60
25
75
30
90
40
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Input Rise and Fall Times

ÎÎÎ
2.0
3.0
1000
800
1000
800
1000
800
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
4.5 500 500 500
6.0 400 400 400

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84
MC74HC161A, MC74HC163A

FUNCTION DESCRIPTION

The HC161A/163A are programmable 4−bit synchronous CONTROL FUNCTIONS


counters that feature parallel Load, synchronous or Resetting
asynchronous Reset, a Carry Output for cascading, and A low level on the Reset pin (Pin 1) resets the internal
count−enable controls. flip−flops and sets the outputs (Q0 through Q3) to a low
The HC161A and HC163A are binary counters with level. The HC161A resets asynchronously, and the HC163A
asynchronous Reset and synchronous Reset, respectively. resets with the rising edge of the Clock input (synchronous
reset).
INPUTS
Loading
Clock (Pin 2)
With the rising edge of the Clock, a low level on Load
The internal flip−flops toggle and the output count
(Pin 9) loads the data from the Preset Data input pins (P0,
advances with the rising edge of the Clock input. In addition,
P1, P2, P3) into the internal flip−flops and onto the output
control functions, such as resetting and loading, occur with
pins, Q0 through Q3. The count function is disabled as long
the rising edge of the Clock input.
as Load is low.
Preset Data Inputs P0, P1, P2, P3 (Pins 3, 4, 5, 6)
Count Enable/Disable
These are the data inputs for programmable counting.
These devices have two count−enable control pins:
Data on these pins may be synchronously loaded into the
Enable P (Pin 7) and Enable T (Pin 10). The devices count
internal flip−flops and appear at the counter outputs.
when these two pins and the Load pin are high. The logic
P0 (Pin 3) is the least−significant bit and P3 (Pin 6) is the
equation is:
most−significant bit.
Count Enable = Enable P • Enable T • Load
OUTPUTS The count is either enabled or disabled by the control
inputs according to Table 1. In general, Enable P is a
Q0, Q1, Q2, Q3 (Pins 14, 13, 12, 11)
count−enable control: Enable T is both a count−enable and
These are the counter outputs. Q0 (Pin 14) is the a Ripple−Carry Output control.
least−significant bit and Q3 (Pin 11) is the most−significant
bit. Table 1. Count Enable/Disable

Ripple Carry Out (Pin 15) Control Inputs Result at Outputs


When the counter is in its maximum state, 1111, this Load Enable P Enable T Q0 − Q3 Ripple Carry Out
output goes high, providing an external look−ahead carry
H H H Count
pulse that may be used to enable successive cascaded High when Q0−Q3
Q0 Q3
counters. Ripple Carry Out remains high only during the L H H No are maximum*
Count
maximum count state. The logic equation for this output is:
Ripple Carry Out = Enable T • Q0 • Q1 • Q2 • Q3 X L H No High when Q0−Q3
Count are maximum*

OUTPUT STATE DIAGRAMS X X L No


L
Count
*Q0 through Q3 are maximum when Q3, Q2, Q1, Q0 = 1111.
0 1 2 3 4

15 5

14 6

13 7

12 11 10 9 8

Figure 3. Binary Counters

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85
MC74HC161A, MC74HC163A

SWITCHING WAVEFORMS

tr tf tw
VCC VCC
CLOCK 90%
50% RESET 50%
10% GND GND
tw tPHL
1/fmax
ANY 50%
tPLH tPHL
OUTPUT
ANY 90% trec
50%
OUTPUT 10% VCC
CLOCK 50%
tTLH tTHL GND

Figure 4. Figure 5.

tr tf
VCC 50%
ENABLE T 90% RESET
50%
10% GND
tPLH tPHL tsu th
RIPPLE 90%
50% VCC
CARRY 10% CLOCK 50%
OUT
tTLH tTHL GND

Figure 6. Figure 7. HC163A Only

VALID

INPUTS VCC
P0, P1, 50%
P2, P3 GND VALID

tsu th ENABLE T VCC


OR 50%
VCC ENABLE P GND
LOAD 50% tsu th
GND VCC
CLOCK 50%
tsu th trec GND
VCC
CLOCK 50%
GND
Figure 8. Figure 9.

TEST CIRCUIT

TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 10.

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86
T0 14
R Q0 Q0
C
C
LOAD
3 LOAD Q0
P0 P0
Figure 11. 4−Bit Binary Counter with Asynchronous Reset (MC74HC161A)

T1 13
R Q1 Q1
C
C
LOAD
LOAD Q1
P1 4 P1

MC74HC161A, MC74HC163A
T2 12
R Q2 Q2
C
C
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LOAD
5 LOAD Q2
P2 P2
87

T3 11
R Q3 Q3
C
C
LOAD
6 LOAD
P3 P3
15 RIPPLE
CARRY
OUT
7
ENABLE P

VCC= PIN 16
10 GND = PIN 8
ENABLE T

1
RESET R
The flip−flops shown in the circuit diagrams are Toggle−Enable flip−flops. A Toggle−
Enable flip−flop is a combination of a D flip−flop and a T flip−flop. When loading data from
9 LOAD
LOAD Preset inputs P0, P1, P2, and P3, the Load signal is used to disable the Toggle input (Tn) of
LOAD the flip−flop. The logic level at the Pn input is then clocked to the Q output of the flip−flop
2 on the next rising edge of the clock.
CLOCK C A logic zero on the Reset device input forces the internal clock (C) high and resets the Q
C output of the flip−flop low.
MC74HC161A, MC74HC163A

Sequence illustrated in waveforms:


1. Reset outputs to zero.
2. Preset to binary twelve.
3. Count to thirteen, fourteen, fifteen, zero, one and two.
4. Inhibit.

RESET (HC161A)
(ASYNCHRONOUS)
RESET (HC163A)
(SYNCHRONOUS)
LOAD

P0

PRESET P1
DATA
INPUTS P2

P3
CLOCK (HC161A)

CLOCK (HC163A)

ENABLE P
COUNT
ENABLES
ENABLE T

Q0

Q1
OUTPUTS
Q2

Q3

RIPPLE
CARRY 12 13 14 15 0 1 2
OUT COUNT INHIBIT
RESET LOAD

Figure 12. Timing Diagram

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88
T0 14
R Q0 Q0
C
C
LOAD
3 LOAD Q0
P0 P0
Figure 13. 4−Bit Binary Counter with Synchronous Reset (MC74HC163A)

T1 13
R Q1 Q1
C
C
LOAD
4 LOAD Q1
P1 P1

MC74HC161A, MC74HC163A
T2 12
R Q2 Q2
C
C
LOAD
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5 LOAD Q2
P2 P2
89

T3 11
R Q3 Q3
C
C
LOAD
6 LOAD
P3 P3
15 RIPPLE
CARRY
OUT
7
ENABLE P
VCC= PIN 16
10 GND = PIN 8
ENABLE T

1
RESET R
The flip−flops shown in the circuit diagrams are Toggle−Enable flip−flops. A Toggle−
Enable flip−flop is a combination of a D flip−flop and a T flip−flop. When loading data from
9 LOAD
LOAD Preset inputs P0, P1, P2, and P3, the Load signal is used to disable the Toggle input (Tn) of
LOAD the flip−flop. The logic level at the Pn input is then clocked to the Q output of the flip−flop
2 on the next rising edge of the clock.
CLOCK C A logic zero on the Reset device input forces the internal clock (C) high and resets the Q
C output of the flip−flop low.
MC74HC161A, MC74HC163A

TYPICAL APPLICATIONS CASCADING

LOAD

INPUTS INPUTS INPUTS

LOAD P0 P1 P2 P3 LOAD P0 P1 P2 P3 LOAD P0 P1 P2 P3


H = COUNT
ENABLE P ENABLE P ENABLE P
L = DISABLE
RIPPLE RIPPLE RIPPLE
H = COUNT TO MORE
ENABLE T CARRY ENABLE T CARRY ENABLE T CARRY
L = DISABLE SIGNIFICANT
OUT OUT OUT
STAGES
CLOCK CLOCK CLOCK

R Q0 Q1 Q2 Q3 R Q0 Q1 Q2 Q3 R Q0 Q1 Q2 Q3

RESET

OUTPUTS OUTPUTS OUTPUTS


CLOCK

NOTE: When used in these cascaded configurations the clock fmax guaranteed limits may not apply. Actual performance will
depend on number of stages. This limitation is due to set up times between Enable (Port) and Clock.

Figure 14. N−Bit Synchronous Counters

INPUTS INPUTS INPUTS

LOAD
ENABLE P
ENABLE T

LOAD P0 P1 P2 P3 LOAD P0 P1 P2 P3 LOAD P0 P1 P2 P3

ENABLE P ENABLE P ENABLE P


RIPPLE RIPPLE RIPPLE TO MORE
ENABLE T CARRY ENABLE T CARRY ENABLE T CARRY
OUT OUT OUT SIGNIFICANT
STAGES
CLOCK CLOCK CLOCK CLOCK

R Q0 Q1 Q2 Q3 R Q0 Q1 Q2 Q3 R Q0 Q1 Q2 Q3

RESET

OUTPUTS OUTPUTS OUTPUTS

Figure 15. Nibble Ripple Counter

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90
MC74HC161A, MC74HC163A

TYPICAL APPLICATIONS VARYING THE MODULUS

HC163A HC163A

OTHER Q0 OPTIONAL BUFFER OTHER Q0 OPTIONAL BUFFER


INPUTS FOR NOISE REJECTION INPUTS FOR NOISE REJECTION
Q1 Q1

Q2 OUTPUT Q2 OUTPUT
Q3 Q3

RESET RESET

Figure 16. Modulo−5 Counter Figure 17. Modulo−11 Counter

The HC163A facilitates designing counters of any modulus with minimal external logic. The output is glitch−free due to
the synchronous Reset.

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91
MC74HC164A

8−Bit Serial−Input/Parallel−
Output Shift Register
High−Performance Silicon−Gate CMOS
The MC74HC164A is identical in pinout to the LS164. The device
inputs are compatible with standard CMOS outputs; with pullup http://onsemi.com
resistors, they are compatible with LSTTL outputs.
The MC74HC164A is an 8−bit, serial−input to parallel−output shift MARKING
register. Two serial data inputs, A1 and A2, are provided so that one DIAGRAMS
input may be used as a data enable. Data is entered on each rising edge 14
of the clock. The active−low asynchronous Reset overrides the Clock PDIP−14
N SUFFIX MC74HC164AN
and Serial Data inputs. AWLYYWW
CASE 646
Features 1
• This device is manufactured with a Pb−Free external lead finish 14
only* SOIC−14
HC164A
D SUFFIX
• Output Drive Capability: 10 LSTTL Loads CASE 751A
AWLYWW

• Outputs Directly Interface to CMOS, NMOS, and TTL 1


14
• Operating Voltage Range: 2 V to 6 V
• Low Input Current: 1 A TSSOP−14 HC
164A

DT SUFFIX
High Noise Immunity Characteristic of CMOS Devices CASE 948G ALYW
• In Compliance with the Requirements Defined by JEDEC Standard
1
No. 7A
A = Assembly Location
• Chip Complexity: 244 FETs or 61 Equivalent Gates WL or L = Wafer Lot
YY or Y = Year
LOGIC DIAGRAM
WW or W = Work Week
3
SERIAL 1 QA
A1
DATA DATA 4 PIN ASSIGNMENT
2 QB
INPUTS A2 5
QC
6 A1 1 14 VCC
QD PARALLEL
10 DATA A2 2 13 QH
QE OUTPUTS
11 QA 3 12 QG
QF
8 12 QB 4 11 QF
CLOCK QG
13 QC 5 10 QE
QH
QD 6 9 RESET
9 PIN 14 = VCC
RESET PIN 7 = GND GND 7 8 CLOCK

FUNCTION TABLE
Inputs Outputs ORDERING INFORMATION
Reset Clock A1 A2 QA QB … QH Device Package Shipping†
L X X X L L … L
MC74HC164AN PDIP−14 2000 / Box
H X X No Change
H H D D QAn … QGn MC74HC164AD SOIC−14 55 / Rail
H D H D QAn … QGn MC74HC164ADR2 SOIC−14 2500 / Reel
D = data input MC74HC164ADT TSSOP−14 96 / Rail
QAn − QGn = data shifted from the preceding
MC74HC164ADTR2 TSSOP−14 2500 / Reel
stage on a rising edge at the clock input.
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specifications
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2004 92 Publication Order Number:


September, 2004 − Rev. 2 MC74HC164A/D
MC74HC164A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
−55C to
25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 A 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 0.5 0.5 0.5 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ Vin = VIH or VIL |Iout|  2.4 mA
6.0
3.0
5.9
2.48
5.9
2.34
5.9
2.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 3.98 3.84 3.70
|Iout|  5.2 mA 6.0 5.48 5.34 5.20

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93
MC74HC164A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC −55C to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 A 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.40
|Iout|  4.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.26 0.33 0.40
|Iout|  5.2 mA 6.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 A
Current (per Package) Iout = 0 A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC −55C to
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
10
20
10
20
10
20
MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 40 35 30
6.0 50 45 40

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
4.5
160
100
32
200
150
40
250
200
48
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Reset to Q
6.0
2.0
27
175
34
220
42
260 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4) 3.0 100 150 200
4.5 35 44 53

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH, ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Output Transition Time, Any Output
6.0
2.0
30
75
37
95
45
110 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL (Figures 1 and 4) 3.0 27 32 36
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance — 10 10 10 pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 180 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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94
MC74HC164A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC −55C to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, A1 or A2 to Clock 2.0 25 35 40 ns
(Figure 3) 3.0 15 20 25

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 7 8 9

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5 6 6

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
th Minimum Hold Time, Clock to A1 or A2 2.0 3 3 3 ns
(Figure 3) 3.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 3 3 3 ns
(Figure 2) 3.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock 2.0 50 60 75 ns
(Figure 1) 3.0 26 35 45

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 20
6.0 10 12 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tw
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(Figure 2) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum Pulse Width, Reset

ÎÎÎÎ
ÎÎÎ
2.0
3.0
50
26
60
35
75
45
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 20
6.0 10 12 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(Figure 1) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Rise and Fall Times

ÎÎÎÎ
ÎÎÎ
2.0
3.0
1000
800
1000
800
1000
800
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

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95
MC74HC164A

PIN DESCRIPTIONS

INPUTS register is completely static, allowing clock rates down to


DC in a continuous or intermittent mode.
A1, A2 (Pins 1, 2)
Serial Data Inputs. Data at these inputs determine the data OUTPUTS
to be entered into the first stage of the shift register. For a QA − QH (Pins 3, 4, 5, 6, 10, 11, 12, 13)
high level to be entered into the shift register, both A1 and
Parallel Shift Register Outputs. The shifted data is
A2 inputs must be high, thereby allowing one input to be
presented at these outputs in true, or noninverted, form.
used as a data−enable input. When only one serial input is
used, the other must be connected to VCC. CONTROL INPUT
Clock (Pin 8) Reset (Pin 9)
Shift Register Clock. A positive−going transition on this Active−Low, Asynchronous Reset Input. A low voltage
pin shifts the data at each stage to the next stage. The shift applied to this input resets all internal flip−flops and sets
Outputs QA − QH to the low level state.

SWITCHING WAVEFORMS

tr tf tw
VCC VCC
90% RESET 50%
CLOCK 50%
10% GND GND
tw tPHL
1/fmax
Q 50%
tPLH tPHL
90% trec
Q 50% VCC
10%
CLOCK 50%
tTLH tTHL GND

Figure 1. Figure 2.

TEST POINT

VALID OUTPUT
VCC DEVICE
A1 OR A2 50% UNDER
GND TEST CL*
tsu th
VCC
CLOCK 50%
GND
*Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

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96
MC74HC164A

EXPANDED LOGIC DIAGRAM

8
CLOCK

1
A1
2 D Q D Q D Q D Q D Q D Q D Q D Q
A2
R R R R R R R R
9
RESET

3 4 5 6 10 11 12 13

QA QB QC QD QE QF QG QH

TIMING DIAGRAM

CLOCK
A1
A2

RESET
QA

QB

QC

QD

QE

QF

QG

QH

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97
MC74HC174A

Hex D Flip−Flop with


Common Clock and Reset
High−Performance Silicon−Gate CMOS
The MC74HC174A is identical in pinout to the LS174. The device
inputs are compatible with standard CMOS outputs; with pull−up
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resistors, they are compatible with LSTTL outputs.
This device consists of six D flip−flops with common Clock and MARKING
Reset inputs. Each flip−flop is loaded with a low−to−high transition of DIAGRAMS
the Clock input. Reset is asynchronous and active−low.
16
• Output Drive Capability: 10 LSTTL Loads 16
MC74HC174AN
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
AWLYYWW
• Operating Voltage Range: 2 to 6 V PDIP−16
N SUFFIX 1
• Low Input Current: 1.0 A CASE 648
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 162 FETs or 40.5 Equivalent Gates
16
16
1 HC174A
RESET 1 16 VCC
AWLYWW
Q0 2 15 Q5 SO−16
D SUFFIX 1
D0 3 14 D5 CASE 751B
D1 4 13 D4
Q1 5 12 Q4
D2 6 11 D3 16
Q2 7 10 Q3 16
HC
GND 8 9 CLOCK 1
174A
TSSOP−16 ALYW
DT SUFFIX
CASE 948F 1
Figure 5. Pin Assignment

FUNCTION TABLE
Inputs Output A = Assembly Location
L, WL = Wafer Lot
Reset Clock D Q Y, YY = Year
L X X L W, WW = Work Week

H H H
H L L
H L X No Change ORDERING INFORMATION
H X No Change Device Package Shipping
MC74HC174AN PDIP−16 2000/Box

MC74HC174AD SOIC−16 48/Rail

MC74HC174ADR2 SOIC−16 2500/Reel

MC74HC174ADT TSSOP−16 96/Rail

MC74HC174ADTR2 TSSOP−16 2500/Reel

 Semiconductor Components Industries, LLC, 2001 98 Publication Order Number:


May, 2001 − Rev. 8 MC74HC174A/D
MC74HC174A

D0 3 2 Q0
D1 4 5
Q1
D2 6 7 Q2
DATA NONINVERTING
INPUTS D3 11 10 Q3 OUTPUTS

D4 13 12 Q4
14 15
D5 Q5

CLOCK 9
PIN 16 = VCC
PIN 8 = GND
RESET 1

Figure 6. Logic Diagram

DESIGN/VALUE TABLE

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Design Criteria

ÎÎÎÎ
Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Internal Gate Count* 40.5 ea.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Internal Gate Propagation Delay 1.5 ns

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Internal Gate Power Dissipation

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
5.0 W

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Speed Power Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
.0075 pJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Equivalent to a two−input NAND gate.

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99
MC74HC174A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) 0.5 to 7.0 V
VIN DC Input Voltage (Referenced to GND) 1.5 to VCC 1.5 V
VOUT DC Output Voltage (Referenced to GND) (Note 2) 0.5 to VCC 0.5 V
IIN DC Input Current, per Pin 20 mA
IOUT DC Output Current, per Pin 25 mA
ICC DC Supply Current, VCC and GND Pins 50 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds PDIP, SOIC, TSSOP 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 78 C/W
SOIC 112
TSSOP 148
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 3) 2000 V
Machine Model (Note 4) 100
Charged Device Model (Note 5) 500
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA

1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. IO absolute maximum rating must be observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
7. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIN,VOUT

ÎÎÎÎ
TA ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
(Referenced to GND) (Note 8)
55
0 VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Input Rise and Fall Time (Figure 8)

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

8. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.

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100
MC74HC174A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIH ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Minimum High−Level Input
Test Conditions
VOUT = 0.1 V or VCC – 0.1 V
V
2.0
55C to 25C
1.5
85C
1.5
125C
1.5
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Voltage |IOUT|  20 A 4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Low−Level Input

ÎÎ
VOUT = 0.1 V or VCC – 0.1 V
|IOUT|  20 A
2.0
4.5
0.5
1.35
0.5
1.35
0.5
1.35
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Output VIN = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |IOUT|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VIN = VIH or VIL
|IOUT|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
|IOUT|  5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VOL Maximum Low−Level Output VIN = VIH or VIL 2.0 0.1 0.1 0.1 V
|IOUT|  20 A

ÎÎ
Voltage 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ VIN = VIH or VIL
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
|IOUT|  4.0 mA 4.5 0.26 0.33 0.4
|IOUT|  5.2 mA 6.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IIN

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ICC
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage Current

ÎÎ
Maximum Quiescent Supply
VIN = VCC or GND
VIN = VCC or GND
6.0
6.0
0.1
4.0
1.0
40
1.0
160
A
A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Current (per Package) IOUT = 0 A

9. Information on typical parametric values, along with high frequency or heavy load considerations, can be found in the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ Parameter V 55C to 25C 85C 125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎ
ÎÎÎÎ
(Figures 8 and 11)
2.0
4.5
6.0
6.0
30
35
4.8
24
28
4.0
20
24
MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎ
Maximum Propagation Delay, Clock to Q

ÎÎ
ÎÎÎÎ
(Figures 9 and 11)
2.0
4.5
110
22
140
28
165
33
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
6.0 19 24 28

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
tPLH Maximum Propagation Delay, Reset to Q 2.0 110 140 160 ns
tPHL (Figures 2 and 11) 4.5 21 28 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎ
6.0 19 24 27

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
tTLH Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 8 and 11) 4.5 15 19 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance, per Enabled Output (Note 11) 62 pF

11. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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101
MC74HC174A

TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)


Guaranteed Limit
VCC 55C to 25C 85C 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Parameter

ÎÎ
Minimum Setup Time, Data to Clock
Figure
10
V
2.0
Min
50
Max Min
65
Max Min
75
Max Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 10 13 15
6.0 9.0 11 13

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
th

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Minimum Hold Time, Clock to Data

ÎÎ
10 2.0
4.5
5.0
5.0
5.0
5.0
5.0
5.0
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
trec Minimum Recovery Time, 9 2.0 5.0 5.0 5.0 ns
Reset Inactive to Clock 4.5 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Clock 8 2.0 75 95 110 ns
4.5 15 19 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Reset 9 2.0 75 95 110 ns

ÎÎ
4.5 15 19 22

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Maximum Input Rise and Fall Times 8
6.0
2.0
13
1000
16
1000
19
1000 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 500 500 500
6.0 400 400 400

CLOCK 9
C 2
3 Q Q0
D0 D
R
RESET 1

C 5
4 Q Q1
D1 D
R

C 7
6 Q Q2
D2 D
R

C 10
11 Q Q3
D3 D
R

C 12
13 Q Q4
D4 D
R

C 15
14 Q Q5
D5 D
R

Figure 7. Expanded Logic Diagram

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102
MC74HC174A

tr tf
VCC tw
90%
RESET VCC
CLOCK 50%
50%
10% GND GND
tw tPHL
1/fmax

tPLH tPHL Q

90% trec
Q 50% VCC
10% 50%
CLOCK GND
tTLH tTHL

Figure 8. Switching Waveform Figure 9. Switching Waveform

TEST POINT
VALID
VCC
OUTPUT
DATA 50% DEVICE
GND UNDER
tsu th TEST CL*
VCC
CLOCK 50%
GND
*Includes all probe and jig capacitance

Figure 10. Switching Waveform Figure 11. Test Circuit

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103
MC74HC175A

Quad D Flip−Flop with


Common Clock and Reset
High−Performance Silicon−Gate CMOS
The MC74HC175A is identical in pinout to the LS175. The device
inputs are compatible with standard CMOS outputs; with pullup
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resistors, they are compatible with LSTTL outputs.
This device consists of four D flip−flops with common Reset and MARKING
Clock inputs, and separate D inputs. Reset (active−low) is DIAGRAMS
asynchronous and occurs when a low level is applied to the Reset 16
input. Information at a D input is transferred to the corresponding Q PDIP−16
N SUFFIX MC74HC175AN
output on the next positive going edge of the Clock input. 16 AWLYYWW
CASE 648
• Output Drive Capability: 10 LSTTL Loads 1
1
• Outputs Directly Interface to CMOS, NMOS, and TTL 16
• Operating Voltage Range: 2 to 6 V SO−16
HC175A
• Low Input Current: 1 µA 16
D SUFFIX
CASE 751B
AWLYWW
• High Noise Immunity Characteristic of CMOS Devices 1
1
• In Compliance with the Requirements Defined by JEDEC Standard 16
No. 7A HC
TSSOP−16
• Chip Complexity 166 FETs or 41.5 Equivalent Gates 16 DT SUFFIX 175A
CASE 948F ALYW
1
LOGIC DIAGRAM
1
A = Assembly Location
CLOCK 9 2 Q0 WL = Wafer Lot
3 Q0 YY = Year
7 WW = Work Week
Q1 INVERTING
D0 4 6 Q1 AND
5 10 Q2
D1 NONINVERTING
DATA 11 PIN ASSIGNMENT
Q2 OUTPUTS
INPUTS D2 12 15 Q3 RESET 1 16 VCC
D3 13 14 Q3
Q0 2 15 Q3
RESET 1
Q0 3 14 Q3

PIN 16 = VCC D0 4 13 D3
PIN 8 = GND D1 5 12 D2
Q1 6 11 Q2
FUNCTION TABLE
Q1 7 10 Q2
Inputs Outputs
GND 8 9 CLOCK
Reset Clock D Q Q
L X X L H
H H H L
H L L H
H L X No Change ORDERING INFORMATION
Device Package Shipping
MC74HC175AN PDIP−16 2000 / Box
MC74HC175AD SOIC−16 48 / Rail
MC74HC175ADR2 SOIC−16 2500 / Reel
MC74HC175ADT TSSOP−16 96 / Rail
MC74HC175ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 104 Publication Order Number:


March, 2000 − Rev. 2 MC74HC175A/D
MC74HC175A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ
(Figure 1) VCC = 3.0 V 0 600
VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ VCC = 6.0 V 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
1.5
2.1
1.5
2.1
1.5
2.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 42

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
2.0
4.5
1.9
4.4
1.9
4.4
1.9
4.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9
Vin = VIH or VIL |Iout|  2.4 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3.0 2.48 2.34 2.20
|Iout|  4.0 mA 4.5 3.98 3.84 3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.20

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105
MC74HC175A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 µA 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 0.26 0.33 0.40
|Iout|  5.2 mA 6.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current (per Package) Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
V 25C  85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Unit
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 6 4.8 4 MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
(Figures 1 and 4)

ÎÎÎÎ
ÎÎÎ
3.0
4.5
6.0
10
30
35
8.0
24
28
6
20
24

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q or Q

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
150
75
190
90
225
110
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 26 32 38
6.0 22 28 33

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Reset to Q or Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
2.0
3.0
125
70
155
85
190
110
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 27 34
6.0 19 24 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
75
27
95
32
110
36
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
NOTES: ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance — 10 10 10 pF

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Flip−Flop)* 35 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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106
MC74HC175A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Data to Clock 2.0 100 125 150 ns
(Figure 3) 3.0 45 65 85

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 20 25 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 17 21 26

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
th Minimum Hold Time, Clock to Data 2.0 5 5 5 ns
(Figure 3) 3.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 3 3 3

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 100 125 150 ns
(Figure 2) 3.0 45 65 85

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 20 25 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 17 21 26

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock 2.0 80 100 120 ns
(Figure 1) 3.0 45 65 85

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 16 20 24
6.0 14 17 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tw
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(Figure 2) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum Pulse Width, Reset

ÎÎÎÎ
ÎÎÎ
2.0
3.0
80
45
100
65
120
85
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 16 20 24
6.0 14 17 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(Figure 1) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Rise and Fall Times

ÎÎÎÎ
ÎÎÎ
2.0
3.0
1000
800
1000
800
1000
800
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

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107
MC74HC175A

SWITCHING WAVEFORMS

tw
VCC
50%
RESET
GND
tf tr tPHL
VCC
90%
CLOCK 50% 50%
GND Q
10%
tw tPLH
1/fmax
Q 50%
tPLH tPHL
90% trec
Q or Q 50%
10% VCC
CLOCK
50%
tTLH tTHL
GND

Figure 1. Figure 2.

VALID
VCC
DATA
GND
tsu th
VCC
CLOCK 50%
GND

Figure 3.

TEST CIRCUIT

TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 4.

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108
MC74HC175A

EXPANDED LOGIC DIAGRAM

D0 4 D Q 2 Q0
C
9 3 Q0
CLOCK C
R

D1 5 D Q 7 Q1
C
6 Q1
C
R

D2 12 D Q 10 Q2
C
11 Q2
C
R

D3 13 D Q 15 Q3
C
14 Q3
C
R
RESET 1

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109
MC74HC1G00

Single 2−Input NAND Gate


The MC74HC1G00 is a high speed CMOS 2−input NAND gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25°C http://onsemi.com
• High Noise Immunity
• Balanced Propagation Delays (tPLH = tPHL) MARKING
• Symmetrical Output Impedance (IOH = IOL = 2 mA) DIAGRAMS

• Chip Complexity: FETs = 40


5
• Pb−Free Packages are Available
1 H1d
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A Pin 1
IN B 1 5 VCC

5
IN A 2
1 H1M

GND 3 4 OUT Y SOT23−5/TSOP−5/SC59−5


DT SUFFIX Pin 1
CASE 483
Figure 1. Pinout (Top View)
d = Date Code
M = Month Code

IN A PIN ASSIGNMENT
& OUT Y
IN B 1 IN B
2 IN A
Figure 2. Logic Symbol 3 GND
4 OUT Y
5 VCC

FUNCTION TABLE
Inputs Output
A B Y

L L H
L H H
H L H
H H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 113 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 110 Publication Order Number:


January, 2005 − Rev. 9 MC74HC1G00/D
MC74HC1G00

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A (Note 1) 350 C/W
TSOP−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A 150 mW
TSOP−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

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111
MC74HC1G00

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.31 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, Maximum VCC = 5.0 V CL = 15 pF 3.5 15 20 25 ns

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL Propagation Delay
Delay,
Input A or B to Y VCC = 2.0 V CL = 50 pF 19 100 125 155

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 10.5 27 35 90
VCC = 4.5 V 7.5 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 6.5 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 3 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200
VCC = 3.0 V 16 35 45 60

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 4.5 V 11 25 31 38

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 9 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF

6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

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112
MC74HC1G00

VCC
tf tr
INPUT OUTPUT
A or B 90% VCC INPUT
50%
10% GND CL*
tPLH tPHL

90%
50%
OUTPUT Y 10%
*Includes all probe and jig capacitance.
tTLH tTHL
A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature
Logic Temp Tape and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1G00DFT1 MC 74 HC1G 00 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G00DFT1G MC 74 HC1G 00 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G00DFT2 MC 74 HC1G 00 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G00DFT2G MC 74 HC1G 00 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G00DTT1 MC 74 HC1G 00 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1G00DTT1G MC 74 HC1G 00 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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113
MC74HC1G02

Single 2−Input NOR Gate


The MC74HC1G02 is a high−speed CMOS 2−input NOR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G02 output drive current is 1/2 compared to the
MC74HC series.
http://onsemi.com
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25C MARKING
• High Noise Immunity DIAGRAMS
• Balanced Propagation Delays (tPLH = tPHL)

5
Symmetrical Output Impedance (IOH = IOL = 2 mA)
1 H3d
• Chip Complexity: FET = 40
• Pb−Free Packages are Available
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A Pin 1

IN B 1 5 VCC 5

1 H3M
IN A 2 SOT23−5/TSOP−5/SC59−5
DT SUFFIX Pin 1
CASE 483
GND 3 4 OUT Y
d = Date Code
M = Month Code
Figure 1. Pinout (Top View)

PIN ASSIGNMENT
1 IN B
IN A
≥1 OUT Y 2 IN A
IN B
3 GND
Figure 2. Logic Symbol 4 OUT Y
5 VCC

FUNCTION TABLE
Inputs Output

A B Y

L L H
L H L
H L L
H H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 117 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 114 Publication Order Number:


January, 2005 − Rev. 8 MC74HC1G02/D
MC74HC1G02

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A (Note 1) 350 C/W
TSOP−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A 150 mW
TSOP−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

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115
MC74HC1G02

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.31 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Maximum ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Test Conditions
VCC = 5.0 V CL = 15 pF
Min Typ
3.5
Max
15
Min Max
20
Min Max
25
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL Propagation Delay
Delay,
Input A or B to Y VCC = 2.0 V CL = 50 pF 19 100 125 155

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 10.5 27 35 90
VCC = 4.5 V 7.5 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 6.5 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 3 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 16 35 45 60
VCC = 4.5 V 11 25 31 38

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 9 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF

6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

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116
MC74HC1G02

tf tr INPUT
INPUT OUTPUT
A or B 90% VCC
50%
10% GND CL*
tPLH tPHL

90%
50%
OUTPUT Y 10%
*Includes all probe and jig capacitance.
tTLH tTHL
A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature
Logic Temp Tape and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1G02DFT1 MC 74 HC1G 02 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G02DFT1G MC 74 HC1G 02 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G02DFT2 MC 74 HC1G 02 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G02DFT2G MC 74 HC1G 02 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G02DTT1 MC 74 HC1G 02 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1G02DTT1G MC 74 HC1G 02 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
117
MC74HC1G04

Single Inverter
The MC74HC1G04 is a high speed CMOS inverter fabricated with
silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G04 output drive current is 1/2 compared to
MC74HC series.
http://onsemi.com
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25C MARKING
• High Noise Immunity DIAGRAMS
• Balanced Propagation Delays (tpLH = tpHL)

5
Symmetrical Output Impedance (IOH = IOL = 2 mA)
1 H5d
• Chip Complexity: FET = 105
• Pb−Free Packages are Available
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A Pin 1

NC 1 5 VCC 5
H5M
1
IN A 2 SOT23−5/TSOP−5/SC59−5
DT SUFFIX Pin 1
CASE 483
GND 3 4 OUT Y
d = Date Code
M = Month Code
Figure 1. Pinout (Top View)

PIN ASSIGNMENT
1 NC
2 IN A
IN A 1 OUT Y
3 GND

Figure 2. Logic Symbol 4 OUT Y


5 VCC

FUNCTION TABLE
Input A Output Y

L H
H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 121 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 118 Publication Order Number:


January, 2005 − Rev. 8 MC74HC1G04/D
MC74HC1G04

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A (Note 1) 350 C/W
TSOP−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A 150 mW
TSOP−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

http://onsemi.com
119
MC74HC1G04

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.31 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Maximum ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Test Conditions
VCC = 5.0 V CL = 15 pF
Min Typ
3.5
Max
15
Min Max
20
Min Max
25
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL Propagation Delay
Delay,
Input A or B to Y VCC = 2.0 V CL = 50 pF 18 100 125 155

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 10 27 35 90
VCC = 4.5 V 7 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 6 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 3 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 16 35 45 60
VCC = 4.5 V 11 25 31 38

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 9 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF

6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

http://onsemi.com
120
MC74HC1G04

tr tf INPUT OUTPUT
90% VCC
50% CL*
INPUT A 10% GND
tPHL tPLH
OUTPUT Y 90%
50%
10% *Includes all probe and jig capacitance.
tTHL tTLH A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature

Tape
Logic Temp and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1G04DFT1 MC 74 HC1G 08 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G04DFT1G MC 74 HC1G 08 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G04DFT2 MC 74 HC1G 08 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G04DFT2G MC 74 HC1G 08 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G04DTT1 MC 74 HC1G 08 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1G04DTT1G MC 74 HC1G 08 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
121
MC74HC1G08

Single 2−Input AND Gate


The MC74HC1G08 is a high speed CMOS 2−input AND gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G08 output drive current is 1/2 compared to
MC74HC series.
http://onsemi.com
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25°C
MARKING
• High Noise Immunity DIAGRAMS
• Balanced Propagation Delays (tpLH = tpHL)
5

• Symmetrical Output Impedance (IOH = IOL = 2 mA) 1


H2d
• Chip Complexity: FET = 44 SC70−5/SC−88A/SOT−353
DF SUFFIX
• Pb−Free Packages are Available CASE 419A
Pin 1

5
IN B 1 5 VCC
1 H2M
SOT23−5/TSOP−5/SC59−5
IN A 2 DT SUFFIX Pin 1
CASE 483

GND 3 4 OUT Y d = Date Code


M = MonthCode

Figure 1. Pinout
PIN ASSIGNMENT
1 IN B
2 IN A
IN A 3 GND
& OUT Y
IN B 4 OUT Y
5 VCC
Figure 2. Logic Symbol
FUNCTION TABLE

Inputs Output

A B Y
L L L
L H L
H L L
H H H

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 125 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 122 Publication Order Number:


January, 2005 − Rev. 8 MC74HC1G08/D
MC74HC1G08

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1) 350 C/W
SOT23−5/TSOP−5/SC59−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A/SOT−353 150 mW
SOT23−5/TSOP−5/SC59−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

http://onsemi.com
123
MC74HC1G08

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.31 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Maximum ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Test Conditions
VCC = 5.0 V CL = 15 pF
Min Typ
3.5
Max
15
Min Max
20
Min Max
25
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL Propagation Delay
Delay,
Input A or B to Y VCC = 2.0 V CL = 50 pF 20 100 125 155

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 11 27 35 90
VCC = 4.5 V 8 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 7 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 3 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 16 35 45 60
VCC = 4.5 V 11 25 31 38

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 9 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

http://onsemi.com
124
MC74HC1G08

VCC
tr tf
VCC OUTPUT
INPUT
90%
INPUT 50%
10% GND CL*
A or B
tPLH tPHL

90%
50%
OUTPUT Y 10%
*Includes all probe and jig capacitance.
tTLH tTHL
A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature

Tape
Logic Temp and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1G08DFT1 MC 74 HC1G 08 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G08DFT1G MC 74 HC1G 08 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G08DFT2 MC 74 HC1G 08 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G08DFT2G MC 74 HC1G 08 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G08DTT1 MC 74 HC1G 08 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1G08DTT1G MC 74 HC1G 08 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
125
MC74HC1G14

Single Inverter with


Schmitt−Trigger Input
The MC74HC1G14 is a high speed CMOS inverter with
Schmitt−Trigger input fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G14 output drive current is 1/2 compared to http://onsemi.com
MC74HC series.
• High Speed: tPD = 7.0 ns (Typ) at VCC = 5.0 V MARKING
• Low Power Dissipation: ICC = 1.0 A (Max) at TA = 25C DIAGRAMS
5
• High Noise Immunity
1
• Balanced Propagation Delays (tPLH = tPHL) HAd
SC70−5/SC−88A/SOT−353
• Symmetrical Output Impedance (IOH = IOL = 2.0 mA) DF SUFFIX
• Chip Complexity: FET = 101 CASE 419A
Pin 1
• Pb−Free Packages are Available

1 HAM
NC 1 5 VCC
SOT23−5/TSOP−5/SC59−5
DT SUFFIX Pin 1
IN A 2 CASE 483

d = Date Code
GND 3 4 OUT Y M = Month Code

Figure 1. Pinout (Top View)


PIN ASSIGNMENT
1 NC
2 IN A
3 GND
IN A 1 OUT Y
4 OUT Y
5 VCC
Figure 2. Logic Symbol
FUNCTION TABLE
Inputs Outputs

L H
H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 129 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 126 Publication Order Number:


January, 2005 − Rev. 9 MC74HC1G14/D
MC74HC1G14

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1) 350 C/W
SOT23−5/TSOP−5/SC59−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A/SOT−353 150 mW
SOT23−5/TSOP−5/SC59−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 3.3 V ± 0.3 V − No Limit ns/V
VCC = 5.0 V ± 0.5 V − No Limit

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

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127
MC74HC1G14

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VT Positive−Going VOUT = 0.1 V 2.0 1.00 1.34 1.50 0.95 1.60 0.90 1.60 V
Input Threshold |IOUT|  20 A 3.0 1.50 2.02 2.5 1.45 2.60 1.40 2.60
Voltage 4.5 2.30 2.97 3.15 2.25 3.15 2.20 3.15
6.0 3.00 3.93 4.20 2.95 4.20 2.90 4.20
VT Negative−Going VOUT = VCC 0.1 2.0 0.55 0.86 1.15 0.55 1.20 0.55 1.25 V
Input Threshold V 3.0 1.0 1.44 1.80 1.0 1.85 1.0 1.90
Voltage |IOUT|  20 A 4.5 1.75 2.28 2.75 1.75 2.8 1.75 2.85
6.0 2.65 3.14 3.65 2.65 3.7 2.65 3.75
VH Hysteresis Voltage VOUT = 0.1 V or 2.0 0.20 0.478 0.8 0.20 0.8 0.20 0.8 V
VOUT = VCC −0.1 3.0 0.25 0.584 0.95 0.25 0.55 0.25 0.95
V 4.5 0.30 0.686 1.1 0.30 1.1 0.30 1.1
|IOUT|  20 A 6.0 0.40 0.790 1.25 0.40 1.5 0.40 1.25
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN  VT Min
IOH = 2 mA 4.5 4.18 4.31 4.13 4.08
IOH = 2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN ≥ VT Max 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current
ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A
Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
tPLH, Maximum VCC = 5.0 V CL = 15 pF 3.5 15 20 25 ns

ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Propagation Delay
Delay,

ÎÎÎÎ
ÎÎÎÎ
Input A or B to Y
ÎÎ
ÎÎ
VCC = 2.0 V
VCC = 3.0 V
CL = 50 pF 19
10.5
100
27
125
35
155
90

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 4.5 V 7.5 20 25 35
VCC = 6.0 V 6.5 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tTHL
ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
Time
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Output Transition

ÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
VCC = 5.0 V
VCC = 2.0 V
CL = 15 pF
CL = 50 pF
3
25
10
125
15
155
20
200
ns

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ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 16 35 45 60
VCC = 4.5 V 11 25 31 38

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ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 9 21 26 32

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ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

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128
MC74HC1G14

tr tf
INPUT OUTPUT
90% VCC
50%
INPUT A 10% GND CL*

tPHL tPLH
OUTPUT Y 90%
50%
10%
*Includes all probe and jig capacitance.
tTHL tTLH A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature
Logic Temp Tape and
Device Order Circuit Range Device Package Reel Tape and
Number Indicator Identifier Technology Function Suffix Suffix Package Type Reel Size†

MC74HC1G14DFT1 MC 74 HC1G 14 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G14DFT1G MC 74 HC1G 14 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G14DFT2 MC 74 HC1G 14 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G14DFT2G MC 74 HC1G 14 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G14DTT1 MC 74 HC1G 14 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1G14DTT1G MC 74 HC1G 14 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
129
MC74HC1G32

Single 2−Input OR Gate


The MC74HC1G32 is a high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G32 output drive current is 1/2 compared to
MC74HC series.
http://onsemi.com
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25C
MARKING
• High Noise Immunity DIAGRAMS
• Balanced Propagation Delays (tpLH = tpHL)
5

• Symmetrical Output Impedance (IOH = IOL = 2 mA) 1


H4d
• Chip Complexity: FET = 44 SC70−5/SC−88A/SOT−353
DF SUFFIX
• Pb−Free Packages are Available CASE 419A
Pin 1

1 H4M
SOT23−5/TSOP−5/SC59−5
IN B 1 5 VCC DT SUFFIX Pin 1
CASE 483

IN A 2
d = Date Code
M = Month Code

GND 3 4 OUT Y
PIN ASSIGNMENT
1 IN B
Figure 1. Pinout 2 IN A
3 GND
4 OUT Y
IN A ≥1 5 VCC
OUT Y
IN B
FUNCTION TABLE
Figure 2. Logic Symbol
Inputs Output

A B Y
L L L
L H H
H L H
H H H

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 133 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 130 Publication Order Number:


January, 2005 − Rev. 8 MC74HC1G32/D
MC74HC1G32

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1) 350 C/W
SOT23−5/TSOP−5/SC59−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A/SOT−353 150 mW
SOT23−5/TSOP−5/SC59−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCH−P Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

http://onsemi.com
131
MC74HC1G32

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.5 1.5 1.5 V
Input Voltage 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level 2.0 0.5 0.5 0.5 V
Input Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V
Output Voltage IOH = −20 A 3.0 2.9 3.0 2.9 2.9
VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.31 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.80 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.17 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.18 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, Maximum VCC = 5.0 V CL = 15 pF 3.5 15 20 25 ns
tPHL Propagation Delay
Delay,

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Input A or B to Y VCC = 2.0 V CL = 50 pF 20 100 125 155
VCC = 3.0 V 12 27 35 90

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 4.5 V 8 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 7 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 3 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200
VCC = 3.0 V 16 35 45 60

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 4.5 V 11 25 31 38
VCC = 6.0 V 9 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
CIN

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input

ÎÎÎ
Capacitance ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
5 10 10 10 pF

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

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132
MC74HC1G32

tr tf INPUT
OUTPUT
VCC
90%
INPUT 50%
10% GND CL*
A or B
tPLH tPHL

90%
50%
OUTPUT Y 10%
*Includes all probe and jig capacitance.
tTLH tTHL
A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature
Logic Temp Tape and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1G32DFT1 MC 74 HC1G 32 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1G32DFT1G MC 74 HC1G 32 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1G32DFT2 MC 74 HC1G 32 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1G32DTT1 MC 74 HC1G 32 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit

MC74HC1G32DTT1G MC 74 HC1G 32 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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133
MC74HC1GU04

Single Unbuffered Inverter


The MC74HC1GU04 is a high speed CMOS unbuffered inverter
fabricated with silicon gate CMOS technology.
The MC74HC1GU04 output drive current is 1/2 compared to
MC74HC series.
• High Speed: tPD = 7 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25C http://onsemi.com
• High Noise Immunity
• Balanced Propagation Delays (tpLH = tpHL) MARKING
DIAGRAMS
• Symmetrical Output Impedance (IOH = IOL = 2 mA)
5
• Chip Complexity: FET = 105
• Pb−Free Packages are Available
1
H6d
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A
Pin 1

NC 1 5 VCC
5

1 H6M
IN A 2
SOT23−5/TSOP−5/SC59−5
DT SUFFIX Pin 1
CASE 483
GND 3 4 OUT Y

d = Date Code
M = Month Code
Figure 1. Pinout

PIN ASSIGNMENT
1 NC
IN A 1 OUT Y 2 IN A
3 GND
Figure 2. Logic Symbol
4 OUT Y
5 VCC

FUNCTION TABLE
Input A Output Y

L H
H L

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 137 of this data sheet.

 Semiconductor Components Industries, LLC, 2005 134 Publication Order Number:


January, 2005 − Rev. 8 MC74HC1GU04/D
MC74HC1GU04

MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 20 mA
IOUT DC Output Sink Current 12.5 mA
ICC DC Supply Current per Supply Pin 25 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1) 350 C/W
SOT23−5/TSOP−5/SC59−5 230
PD Power Dissipation in Still Air at 85C SC70−5/SC−88A/SOT−353 150 mW
SOT23−5/TSOP−5/SC59−5 200
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2) 2000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) N/A
ILATCHUP Latchup Performance Above VCC and Below GND at 125C (Note 5) 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage 2.0 6.0 V
VIN DC Input Voltage 0.0 VCC V
VOUT DC Output Voltage 0.0 VCC V
TA Operating Temperature Range 55 125 C
tr , tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
VCC = 3.0 V 0 600
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DEVICE JUNCTION TEMPERATURE VERSUS


NORMALIZED FAILURE RATE

TIME TO 0.1% BOND FAILURES


FAILURE RATE OF PLASTIC = CERAMIC
Junction UNTIL INTERMETALLICS OCCUR
Temperature °C
TJ = 130C

TJ = 120C

TJ = 100C
TJ = 110C

Time, Hours Time, Years


TJ = 90C

TJ = 80C

80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4 1
110 79,600 9.4
1 10 100 1000
120 37,000 4.2
TIME, YEARS
130 17,800 2.0
140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature

http://onsemi.com
135
MC74HC1GU04

DC ELECTRICAL CHARACTERISTICS
VCC TA = 25C TA  85C 55C  TA  125C

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level 2.0 1.7 1.7 1.7 V
Input Voltage 3.0 2.45 2.45 2.45
4.5 3.60 3.60 3.60
6.0 4.80 4.80 4.80
VIL Maximum Low−Level 2.0 0.3 0.3 0.3 V
Input Voltage 3.0 0.5 0.5 0.5
4.5 0.9 0.9 0.9
6.0 1.20 1.20 1.20
VOH Minimum High−Level VIN = VIH or VIL 2.0 1.8 2.0 1.8 1.8 V
Output Voltage IOH = −20 A 3.0 2.7 3.0 2.7 2.7
VIN = VIH or VIL 4.5 4.0 4.5 4.0 4.0
6.0 5.5 5.9 5.5 5.5
VIN = VIH or VIL
IOH = −2 mA 4.5 4.18 4.33 4.13 4.08
IOH = −2.6 mA 6.0 5.68 5.76 5.63 5.58
VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V
Output Voltage IOL = 20 A 3.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
VIN = VIH or VIL
IOL = 2 mA 4.5 0.26 0.33 0.40
IOL = 2.6 mA 6.0 0.26 0.33 0.40
IIN Maximum Input VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A
Leakage Current

ICC Maximum Quiescent VIN = VCC or GND 6.0 1.0 10 40 A


Supply Current

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)


TA = 25C TA  85C 55C  TA  125C

ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Maximum ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Test Conditions
VCC = 5.0 V CL = 15 pF
Min Typ
3
Max
15
Min Max
20
Min Max
25
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL Propagation Delay
Delay,
Input A or B to Y VCC = 2.0 V CL = 50 pF 17 100 125 155

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 9 27 35 90
VCC = 4.5 V 7 20 25 35

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 6.5 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Output Transition VCC = 5.0 V CL = 15 pF 4 10 15 20 ns
tTHL Time

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 2.0 V CL = 50 pF 25 125 155 200

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 3.0 V 16 35 45 60
VCC = 4.5 V 12 25 31 38

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC = 6.0 V 10 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
CIN Maximum Input 5 10 10 10 pF
Capacitance

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Note 6) 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.

http://onsemi.com
136
MC74HC1GU04

tr tf
90% VCC
INPUT OUTPUT
50%
INPUT A 10% GND
tPHL tPLH CL*

OUTPUT Y 90%
50%
10%
tTHL tTLH
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for
propagation delay tests.

Figure 4. Switching Waveforms Figure 5. Test Circuit

DEVICE ORDERING INFORMATION


Device Nomenclature
Logic Temp Tape and
Device Order Circuit Range Device Package Reel Package Tape and
Number Indicator Identifier Technology Function Suffix Suffix Type Reel Size†

MC74HC1GU04DFT1 MC 74 HC1G U04 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit

MC74HC1GU04DFT1G MC 74 HC1G U04 DF T1 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1GU04DFT2 MC 74 HC1G U04 DF T2 SC70−5/SC−88A/ 178 mm (7 in)
SOT−353 3000 Unit

MC74HC1GU04DFT2G MC 74 HC1G U04 DF T2 SC70−5/SC−88A/ 178 mm (7 in)


SOT−353 3000 Unit
(Pb−Free)
MC74HC1GU04DTT1 MC 74 HC1G U04 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)
SC59−5 3000 Unit

MC74HC1GU04DTT1G MC 74 HC1G U04 DT T1 SOT23−5/TSOP−5/ 178 mm (7 in)


SC59−5 3000 Unit
(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
137
MC74HC240A
Octal 3−State Inverting
Buffer/Line Driver/Line
Receiver
High−Performance Silicon−Gate CMOS
The MC74HC240A is identical in pinout to the LS240. The device
inputs are compatible with standard CMOS outputs; with pullup http://onsemi.com
resistors, they are compatible with LSTTL outputs.
MARKING
This octal noninverting buffer/line driver/line receiver is designed
DIAGRAMS
to be used with 3−state memory address drivers, clock drivers, and
20
other sub−oriented systems. The device has inverting outputs and two
PDIP−20
active−low output enables. N SUFFIX
MC74HC240AN
The HC240A is similar in function to the HC244A. AWLYYWW
20 CASE 738
• Output Drive Capability: 15 LSTTL Loads 1 1

• Outputs Directly Interface to CMOS, NMOS, and TTL


SOIC WIDE−20
20

• Operating Voltage Range: 2 to 6 V 20 DW SUFFIX HC240A


• 1 AWLYYWW
Low Input Current: 1 µA CASE 751D

• High Noise Immunity Characteristic of CMOS Devices 1


20
• In Compliance with the Requirements Defined by JEDEC Standard HC
TSSOP−20
No. 7A 20 DT SUFFIX 240A
• Chip Complexity: 120 FETs or 30 Equivalent Gates 1 CASE 948E ALYW

LOGIC DIAGRAM 1
2 18 A = Assembly Location
A1 YA1
WL = Wafer Lot
YY = Year
4 16
A2 YA2 WW = Work Week

6 14
A3 YA3 PIN ASSIGNMENT
8 12 ENABLE A 1 20 VCC
A4 YA4
DATA INVERTING A1 2 19 ENABLE B
INPUTS 11 9 OUTPUTS
B1 YB1 YB4 3 18 YA1

13 7 A2 4 17 B4
B2 YB2
YB3 5 16 YA2
15 5 A3 6 15 B3
B3 YB3
YB2 7 14 YA3
17 3
B4 YB4 A4 8 13 B2
YB1 9 12 YA4
GND 10 11 B1
PIN 20 = VCC
1
OUTPUT ENABLE A PIN 10 = GND
ENABLES 19
ENABLE B
FUNCTION TABLE ORDERING INFORMATION
Inputs Outputs Device Package Shipping
Enable A, MC74HC240AN PDIP−20 1440 / Box
Enable B A, B YA, YB
MC74HC240ADW SOIC−WIDE 38 / Rail
L L H
MC74HC240ADWR2 SOIC−WIDE 1000 / Reel
L H L
H X Z MC74HC240ADT TSSOP−20 75 / Rail
Z = high impedance MC74HC240ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 138 Publication Order Number:


May, 2000 − Rev. 9 MC74HC240A/D
MC74HC240A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C Unit
VIH Minimum High−Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH
|Iout|  20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.2
3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.48 5.34 5.2
VOL Maximum Low−Level Output Vin = VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.4
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.4

http://onsemi.com
139
MC74HC240A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
µA

(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, A to YA or B to YB 2.0 80 100 120 ns
tPHL (Figures 1 and 3) 3.0 40 50 60

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 16 20 24

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 14 17 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to YA or YB 2.0 110 140 165 ns
tPHZ (Figures 2 and 4) 3.0 60 70 80

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to YA or YB

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
2.0
3.0
110
60
140
70
165
80
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
60
23
75
27
90
32
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance (Output in


10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Transceiver Channel)* 32 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
140
MC74HC240A

SWITCHING WAVEFORMS

VCC
tr tf ENABLE 50%
DATA INPUT VCC GND
90% tPZL tPLZ
A OR B 50% HIGH
10% GND
50% IMPEDANCE
tPHL tPLH OUTPUT Y
90% 10% VOL
50% tPZH tPHZ
OUTPUT 90% VOH
10%
YA OR YB OUTPUT Y 50%
HIGH
tTHL tTLH
IMPEDANCE

Figure 1. Figure 2.

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Test Circuit Figure 4. Test Circuit

PIN DESCRIPTIONS

INPUTS function as inverters. When a high level is applied, the


outputs assume the high−impedance state.
A1, A2, A3, A4, B1, B2, B3, B4
(Pins 2, 4, 6, 8, 11, 13, 15, 17) OUTPUTS
Data input pins. Data on these pins appear in inverted form
YA1, YA2, YA3, YA4, YB1, YB2, YB3, YB4
on the corresponding Y outputs, when the outputs are (Pins 18, 16, 14, 12, 9, 7, 5, 3)
enabled.
Device outputs. Depending upon the state of the
CONTROLS output−enable pins, these outputs are either inverting
outputs or high−impedance outputs.
Enable A, Enable B (Pins 1, 19)
Output enables (active−low). When a low level is applied
to these pins, the outputs are enabled and the devices

http://onsemi.com
141
MC74HC240A

LOGIC DETAIL

TO THREE OTHER
A OR B INVERTERS

ONE OF 8
INVERTERS

VCC
DATA
INPUT
A OR B
YA
OR
YB

ENABLE A
OR ENABLE B

http://onsemi.com
142
MC74HC244A
Octal 3−State Noninverting
Buffer/Line Driver/
Line Receiver
High−Performance Silicon−Gate CMOS
The MC74HC244A is identical in pinout to the LS244. The device
inputs are compatible with standard CMOS outputs; with pullup http://onsemi.com
resistors, they are compatible with LSTTL outputs. MARKING
This octal noninverting buffer/line driver/line receiver is designed DIAGRAMS
to be used with 3−state memory address drivers, clock drivers, and 20
other bus−oriented systems. The device has noninverting outputs and PDIP−20
MC74HC244AN
two active−low output enables. N SUFFIX
AWLYYWW
The HC244A is similar in function to the HC240A. 20 CASE 738
1
• Output Drive Capability: 15 LSTTL Loads 1
20
• Outputs Directly Interface to CMOS, NMOS, and TTL SOIC WIDE−20
• Operating Voltage Range: 2 to 6 V 20
1
DW SUFFIX HC244A
AWLYYWW
CASE 751D
• Low Input Current: 1 µA
1
• High Noise Immunity Characteristic of CMOS Devices 20

• In Compliance with the Requirements Defined by JEDEC Standard TSSOP−20 HC


No. 7A 20 DT SUFFIX 244A
• Chip Complexity: 136 FETs or 34 Equivalent Gates 1 CASE 948E ALYW

1
LOGIC DIAGRAM
A = Assembly Location
2 18 WL = Wafer Lot
A1 YA1
YY = Year
4 16 WW = Work Week
A2 YA2
PIN ASSIGNMENT
6 14
A3 YA3
ENABLE A 1 20 VCC
8 12
A4 YA4 A1 2 19 ENABLE B
DATA NONINVERTING
YB4 3 18 YA1
INPUTS 11 9 OUTPUTS
B1 YB1 A2 4 17 B4
13 7 YB3 5 16 YA2
B2 YB2
A3 6 15 B3
15 5 YB2 7 14 YA3
B3 YB3
A4 8 13 B2
17 3
B4 YB4
YB1 9 12 YA4
GND 10 11 B1

1 PIN 20 = VCC
OUTPUT ENABLE A PIN 10 = GND
ENABLES 19
ENABLE B
ORDERING INFORMATION
FUNCTION TABLE
Device Package Shipping
Inputs Outputs
Enable A, MC74HC244AN PDIP−20 1440 / Box
Enable B A, B YA, YB MC74HC244ADW SOIC−WIDE 38 / Rail
L L L MC74HC244ADWR2 SOIC−WIDE 1000 / Reel
L H H
H X Z MC74HC244ADT TSSOP−20 75 / Rail
Z = high impedance MC74HC244ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 143 Publication Order Number:


May, 2000 − Rev. 9 MC74HC244A/D
MC74HC244A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C Unit
VIH Minimum High−Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH
|Iout|  20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.2
3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.48 5.34 5.2
VOL Maximum Low−Level Output Vin = VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.4
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.4

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144
MC74HC244A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160 µA

NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
85C 125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, A to YA or B to YB 2.0 96 115 135 ns
tPHL (Figures 1 and 3) 3.0 50 60 70

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 18 23 27

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 15 20 23

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to YA or YB 2.0 110 140 165 ns
tPHZ (Figures 2 and 4) 3.0 60 70 80

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to YA or YB

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
2.0
3.0
110
60
140
70
165
80
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
60
23
75
27
90
32
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance (Output in


10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Buffer)* 34 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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145
MC74HC244A

SWITCHING WAVEFORMS

tr tf VCC
DATA INPUT VCC ENABLE 50%
90%
A OR B 50% A OR B GND
10% GND tPZL tPLZ
tPLH tPHL HIGH
OUTPUT 90% 50% IMPEDANCE
50% OUTPUT Y
YA OR YB 10% VOL
10% tPZH tPHZ
tTLH tTHL 90% VOH
OUTPUT Y 50%
HIGH
IMPEDANCE

Figure 1. Figure 2.

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Test Circuit Figure 4. Test Circuit

PIN DESCRIPTIONS

INPUTS function as noninverting buffers. When a high level is


applied, the outputs assume the high impedance state.
A1, A2, A3, A4, B1, B2, B3, B4
(Pins 2, 4, 6, 8, 11, 13, 15, 17) OUTPUTS
Data input pins. Data on these pins appear in noninverted
YA1, YA2, YA3, YA4, YB1, YB2, YB3, YB4
form on the corresponding Y outputs, when the outputs are
(Pins 18, 16, 14, 12, 9, 7, 5, 3)
enabled.
Device outputs. Depending upon the state of the
CONTROLS output−enable pins, these outputs are either noninverting
Enable A, Enable B (Pins 1, 19) outputs or high−impedance outputs.
Output enables (active−low). When a low level is applied
to these pins, the outputs are enabled and the devices

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146
MC74HC244A

LOGIC DETAIL

TO THREE OTHER
A OR B INVERTERS

ONE OF 8
INVERTERS

VCC
DATA
INPUT
A OR B
YA
OR
YB

ENABLE A OR
ENABLE B

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147
MC74HC245A

Octal 3−State Noninverting


Bus Transceiver
High−Performance Silicon−Gate CMOS
The MC74HC245A is identical in pinout to the LS245. The device
inputs are compatible with standard CMOS outputs; with pull−up
http://onsemi.com
resistors, they are compatible with LSTTL outputs.
The HC245A is a 3−state noninverting transceiver that is used for MARKING
2−way asynchronous communication between data buses. The device DIAGRAMS
has an active−low Output Enable pin, which is used to place the I/O
ports into high−impedance states. The Direction control determines
whether data flows from A to B or from B to A. MC74HC245AN
AWLYYWW
• Output Drive Capability: 15 LSTTL Loads 20

• Outputs Directly Interface to CMOS, NMOS, and TTL 1


PDIP−20
Operating Voltage Range: 2 to 6 V N SUFFIX
• Low Input Current: 1 A CASE 783

• High Noise Immunity Characteristic of CMOS Devices


• In Compliance with the Requirements Defined by JEDEC Standard HC245A
20
No. 7A AWLYYWW
• Moisture Sensitivity: MSL1 for All Packages
1

• Chip Complexity: 308 FETs or 77 Equivalent Gates SO−20


DW SUFFIX
CASE 751D

20

1 HC245A
ALYW
TSSOP−20
DT SUFFIX
CASE 948E

A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

ORDERING INFORMATION
Device Package Shipping
MC74HC245AN PDIP−20 18 Units/Rail

MC74HC245ADW SOIC−20 38 Units/Rail

MC74HC245ADWR2 SOIC−20 1000 Tape & Reel


MC74HC245ADT TSSOP−20 75 Units/Rail

MC74HC245ADTR2 TSSOP−20 2500 Tape & Reel

 Semiconductor Components Industries, LLC, 2001 148 Publication Order Number:


July, 2001 − Rev. 10 MC74HC245A/D
MC74HC245A

DIRECTION 1 20 VCC

A1 2 19 OUTPUT ENABLE

A2 3 18 B1

A3 4 17 B2

A4 5 16 B3

A5 6 15 B4

A6 7 14 B5

A7 8 13 B6

A8 9 12 B7

GND 10 11 B8

Figure 1. Pin Assignment

FUNCTION TABLE
Control Inputs
Output
Enable Direction Operation
L L Data Transmitted from Bus B to Bus A
L H Data Transmitted from Bus A to Bus B
H X Buses Isolated (High−Impedance State)
X = don’t care

2 18
A1 B1
3 17
A2 B2
4 16
A3 B3
5 15
A A4 B4 B
DATA 6 14 DATA
PORT A5 B5 PORT
7 13
A6 B6
8 12
A7 B7
9 11
A8 B8

1
DIRECTION
19
OUTPUT ENABLE
PIN 10 = GND
PIN 20 = VCC

Figure 2. Logic Diagram

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149
MC74HC245A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VIN DC Input Voltage 0.5 to VCC 0.5 V
VOUT DC Output Voltage (Note 2) 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 35 mA
IOUT DC Output Sink Current 35 mA
ICC DC Supply Current per Supply Pin 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 67 C/W
SOIC 96
TSSOP 128
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% to 35% UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 3) 2000 V
Machine Model (Note 4) 200
Charged Device Model (Note 5) 1000
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 20 ounce copper trace with no air flow.
2. IO absolute maximum rating must observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA

ÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎ
Operating Temperature, All Package Types

ÎÎÎÎÎÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
–55
0
+125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎ
(Figure 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎÎÎ
VCC = 4.5 V
VCC = 6.0 V
0
0
500
400

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150
MC74HC245A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC
Symbol Parameter Test Conditions V –55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Minimum High−Level Input

ÎÎ
Vout = VCC – 0.1 V
|Iout|  20 A
2.0
3.0
1.5
2.1
1.5
2.1
1.5
2.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V 2.0 0.5 0.5 0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage |Iout|  20 A 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Output Vin = VIH 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Vin = VIH |Iout|  2.4 mA
|Iout|  6.0 mA
6.0
3.0
5.9
2.48
5.9
2.34
5.9
2.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 3.98 3.84 3.7
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOL Maximum Low−Level Output Vin = VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage |Iout|  20 A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Vin = VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IOZ

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Three−State Leakage

ÎÎÎÎÎÎÎÎÎ
Current

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0 ± 0.5 ± 5.0 ± 10 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ
Maximum Quiescent Supply

ÎÎÎÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 A
6.0 4.0 40 160 A

7. Information on typical parametric values and high frequency or heavy load considerations can be found in the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC
Symbol Parameter V –55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎ
tPHL
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
A to B, B to A

ÎÎÎÎ
(Figures 1 and 3)
ÎÎ
Maximum Propagation Delay,

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
2.0
3.0
4.5
75
55
15
95
70
19
110
80
22
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLZ, Maximum Propagation Delay, 2.0 110 140 165 ns
tPHZ Direction or Output Enable to A or B 3.0 90 110 130

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
(Figures 2 and 4)

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
4.5
6.0
22
19
28
24
33
28

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPZL, Maximum Propagation Delay, 2.0 110 140 165 ns
tPZH Output Enable to A or B 3.0 90 110 130

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figures 2 and 4) 4.5 22 28 33

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 19 24 28
tTLH, Maximum Output Transition Time, 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTHL Any Output 3.0 23 27 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figures 1 and 3) 4.5 12 15 18
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Capacitance (Pin 1 or Pin 19)

ÎÎ
Maximum Three−State I/O Capacitance
(I/O in High−Impedance State)


10
15
10
15
10
15
pF
pF

8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Transceiver Channel) (Note 9) 40 pF
9. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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151
MC74HC245A

VCC
DIRECTION 50%
GND
tr tf
VCC VCC
INPUT 90% OUTPUT 50%
A OR B 50%
10% ENABLE GND
GND
tPZL tPLZ
tPLH tPHL HIGH
OUTPUT 90% IMPEDANCE
50% 50%
B OR A A OR B
10% 10% VOL
tPZH tPHZ
tTLH tTHL 90% VOH
A OR B 50%
HIGH
IMPEDANCE

Figure 3. Switching Waveform Figure 4. Switching Waveform

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 5. Test Circuit Figure 6. Test Circuit

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152
MC74HC245A

2
A1
18
B1

3
A2
17
B2

4
A3
16
B3

5
A4
A 15 B
B4
DATA DATA
PORT PORT
6
A5
14
B5

7
A6
13
B6

8
A7
12
B7

9
A8
11
B8

1
DIRECTION

19
OUTPUT ENABLE

Figure 7. Expanded Logic Diagram

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153
MC74HC273A

Octal D Flip−Flop with


Common Clock and Reset
High−Performance Silicon−Gate CMOS
The MC74HC273A is identical in pinout to the LS273. The device
inputs are compatible with standard CMOS outputs; with pullup
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resistors, they are compatible with LSTTL outputs.
This device consists of eight D flip−flops with common Clock and MARKING
Reset inputs. Each flip−flop is loaded with a low−to−high transition of DIAGRAMS
the Clock input. Reset is asynchronous and active low. 20

• Output Drive Capability: 10 LSTTL Loads


PDIP−20
N SUFFIX
MC74HC273AN
• Outputs Directly Interface to CMOS, NMOS and TTL 20 CASE 738
AWLYYWW

• Operating Voltage Range: 2.0 to 6.0 V 1 1


• Low Input Current: 1.0 µA 20
SOIC WIDE−20
• High Noise Immunity Characteristic of CMOS Devices 20 DW SUFFIX HC273A
• In Compliance with the Requirements Defined by JEDEC Standard 1 CASE 751D AWLYYWW

No. 7A 1
20
• Chip Complexity: 264 FETs or 66 Equivalent Gates
TSSOP−20 HC
LOGIC DIAGRAM 20 273A
DT SUFFIX
2 1 CASE 948E ALYW
3 Q0
D0
4 5 1
D1 Q1
7 6 A = Assembly Location
D2 Q2 WL = Wafer Lot
8 9 YY = Year
DATA D3 Q3 NONINVERTING WW = Work Week
INPUTS 13 12
D4 Q4 OUTPUTS
14
D5 15 PIN ASSIGNMENT
Q5
17
D6 16
18 Q6 RESET 1 20 VCC
D7 19
Q7 Q0 2 19 Q7
11
CLOCK
D0 3 18 D7
PIN 20 = VCC D1 4 17 D6
1 PIN 10 = GND
RESET
Q1 5 16 Q6
FUNCTION TABLE Q2 6 15 Q5
Inputs Output D2 7 14 D5
Reset Clock D Q
D3 8 13 D4
L X X L
H H H Q3 9 12 Q4
H L L GND 10 11 CLOCK
H L X No Change

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
H X No Change

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ORDERING INFORMATION
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Device Package Shipping
Internal Gate Count* 66 ea

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MC74HC273AN PDIP−20 1440 / Box
Internal Gate Propagation Delay 1.5 ns

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MC74HC273ADW SOIC−WIDE 38 / Rail
µW

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0 MC74HC273ADWR2 SOIC−WIDE 1000 / Reel
MC74HC273ADT TSSOP−20 75 / Rail
MC74HC273ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 154 Publication Order Number:


May, 2000 − Rev. 9 MC74HC273A/D
MC74HC273A

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product
*Equivalent to a two−input NAND gate.
.0075 pJ

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155
MC74HC273A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C Unit
VIH Minimum High−Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH
|Iout|  20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.2
3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.48 5.34 5.2
VOL Maximum Low−Level Output Vin = VIL 2.0 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.4
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.4

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156
MC74HC273A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
µA

(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 6.0 5.0 4.0 MHz
(Figures 1 and 4) 3.0 15 10 8.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 30 24 20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 35 28 24

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH Maximum Propagation Delay, Clock to Q 2.0 145 180 220 ns
tPHL (Figures 1 and 4) 3.0 90 120 140

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 29 36 44
6.0 25 31 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Reset to Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
2.0
3.0
145
90
180
120
220
140
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 29 36 44
6.0 25 31 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
75
27
95
32
110
36
ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 48 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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157
MC74HC273A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
– 55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Fig. Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tsu Minimum Setup Time, Data to Clock 3 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 23 27 32
4.5 12 15 18

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
th Minimum Hold Time, Clock to Data 3 2.0 3.0 3.0 3.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 3.0 3.0 3.0
4.5 3.0 3.0 3.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 3.0 3.0 3.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
trec Minimum Recovery Time, Reset Inactive to 2 2.0 5.0 5.0 5.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Clock 3.0 5.0 5.0 5.0
4.5 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Clock 1 2.0 60 75 90 ns
3.0 23 27 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎ
4.5
6.0
12
10
15
13
18
15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Reset 2 2.0 60 75 90 ns
3.0 23 27 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎ
4.5
6.0
12
10
15
13
18
15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times 1 2.0 1000 1000 1000 ns
3.0 800 800 800

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 500 500 500
6.0 400 400 400

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158
MC74HC273A

SWITCHING WAVEFORMS

tr tf tw
VCC VCC
90% RESET 50%
CLOCK 50%
10% GND GND
tw tPHL

1/fmax 50%
Q
tPLH tPHL
90% trec
Q 50% VCC
10% CLOCK 50%
tTLH tTHL GND

Figure 1. Figure 2.

VALID
VCC
DATA 50%
GND
tsu th
VCC
CLOCK 50% EXPANDED LOGIC DIAGRAM
GND

Figure 3. C 2
3 Q Q0
D0 DR

C 5
4 Q Q1
D1 DR

C 6
7 Q Q2
TEST POINT D2 DR

C 9
OUTPUT 8 Q Q3
D3 DR NONINVERTING
DEVICE DATA
UNDER OUTPUTS
CL* INPUTS C
TEST 12
13 Q Q4
D4 DR

C 15
14 Q Q5
D5 DR
*Includes all probe and jig capacitance

Figure 4. Test Circuit C 16


17 Q Q6
D6 DR

C 19
18 Q Q7
D7 DR

11

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159
MC74HC32A

Quad 2−Input OR Gate


High−Performance Silicon−Gate CMOS
The MC74HC32A is identical in pinout to the LS32. The device
inputs are compatible with Standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
http://onsemi.com
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL MARKING
DIAGRAMS
• Operating Voltage Range: 2 to 6V 14
• Low Input Current: 1µA PDIP−14
MC74HC32AN
• High Noise Immunity Characteristic of CMOS Devices N SUFFIX
CASE 646 AWLYYWW
• In Compliance With the JEDEC Standard No. 7A Requirements 1
• Chip Complexity: 48 FETs or 12 Equivalent Gates
14
SOIC−14
LOGIC DIAGRAM HC32A
D SUFFIX
AWLYWW
1 CASE 751A
A1 3 1
2 Y1
B1 14

4 TSSOP−14 HC
A2 6 DT SUFFIX 32A
5 Y2
B2 CASE 948G ALYW
Y = A+B
9 1
A3 8
10 Y3 A = Assembly Location
B3 WL or L = Wafer Lot
YY or Y = Year
12
A4 11 WW or W = Work Week
13 Y4
B4
FUNCTION TABLE
PIN 14 = VCC
PIN 7 = GND Inputs Output

A B Y
Pinout: 14−Lead Packages (Top View)
L L L
VCC B4 A4 Y4 B3 A3 Y3 L H H
14 13 12 11 10 9 8 H L H
H H H

1 2 3 4 5 6 7 ORDERING INFORMATION
Device Package Shipping
A1 B1 Y1 A2 B2 Y2 GND
MC74HC32AN PDIP−14 2000 / Box
MC74HC32AD SOIC−14 55 / Rail
MC74HC32ADR2 SOIC−14 2500 / Reel
MC74HC32ADT TSSOP−14 96 / Rail
MC74HC32ADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 160 Publication Order Number:


March, 2000 − Rev. 7 MC74HC32A/D
MC74HC32A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

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161
MC74HC32A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 1.0 10 40 µA
Current (per Package) Iout = 0µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A or B to Output Y 2.0 75 95 110 ns
tPHL (Figures 1 and 2) 3.0 30 40 55
4.5 15 19 22
6.0 13 16 19
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

CPD Power Dissipation Capacitance (Per Buffer)* 20 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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162
MC74HC32A

tr tf
VCC
90%
INPUT 50%
A OR B
10% GND

tPLH tPHL

90%
OUTPUT Y 50%
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A
Y
B

Figure 3. Expanded Logic Diagram


(1/4 of the Device)

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163
MC74HC373A

Octal 3−State Non−Inverting


Transparent Latch
High−Performance Silicon−Gate CMOS
The MC74HC373A is identical in pinout to the LS373. The device http://onsemi.com
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs. MARKING
These latches appear transparent to data (i.e., the outputs change DIAGRAMS
asynchronously) when Latch Enable is high. When Latch Enable goes
20
low, data meeting the setup and hold time becomes latched.
PDIP−20
The Output Enable input does not affect the state of the latches, but N SUFFIX
MC74HC373AN
when Output Enable is high, all device outputs are forced to the AWLYYWW
20 CASE 738
high−impedance state. Thus, data may be latched even when the 1
1
outputs are not enabled. 20
The HC373A is identical in function to the HC573A which has the SOIC WIDE−20 HC373A
data inputs on the opposite side of the package from the outputs to 20 DW SUFFIX AWLYYWW
1 CASE 751D
facilitate PC board layout.
The HC373A is the non−inverting version of the HC533A. 1

20
Features
• Pb−Free Packages are Available*
20
TSSOP−20 HC
373A
DT SUFFIX
• Output Drive Capability: 15 LSTTL Loads 1 CASE 948E ALYW
• Outputs Directly Interface to CMOS, NMOS and TTL 1
• Operating Voltage Range: 2.0 to 6.0 V
20
• Low Input Current: 1.0 A SOEIAJ−20
74HC373A
F SUFFIX
• High Noise Immunity Characteristic of CMOS Devices 20
1
CASE 967
AWLYWW

• In Compliance with the JEDEC Standard No. 7.0 A Requirements 1

• Chip Complexity: 186 FETs or 46.5 Equivalent Gates


A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 166 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004 164 Publication Order Number:


December, 2004 − Rev. 11 MC74HC373A/D
MC74HC373A

OUTPUT 1 20 VCC
ENABLE
Q0 2 19 Q7
D0 3 18 D7
D1 4 17 D6
3 2
D0 Q0 Q1 5 16 Q6
4 5 Q2 6 15 Q5
D1 Q1
7 6 D2 7 14 D5
D2 Q2
8 9 D3 8 13 D4
DATA D3 Q3 NONINVERTING
INPUTS 13 Q3 9 12 Q4
12 OUTPUTS
D4 Q4
GND 10 11 LATCH
14 15 ENABLE
D5 Q5
17 16 Figure 5. PIN ASSIGNMENT
D6 Q6
18 19
D7 Q7
FUNCTION TABLE
11 PIN 20 = VCC Inputs Output
LATCH ENABLE
1 PIN 10 = GND Output Latch
OUTPUT ENABLE Enable Enable D Q
L H H H
Figure 4. LOGIC DIAGRAM L H L L
L L X No Change
H X X Z

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
X = Don’t Care
Z = High Impedance

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Design Criteria

ÎÎÎÎ
ÎÎÎ
Internal Gate Count*
Value
46.5
Units
ea

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Propagation Delay

ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation
1.5
5.0
ns
W

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product
*Equivalent to a two−input NAND gate.
0.0075 pJ

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165
MC74HC373A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC = 6.0 V 0 400

ORDERING INFORMATION
Device Package Shipping†
MC74HC373AN PDIP−20 1440 Units / Box
MC74HC373ANG PDIP−20 1440 Units / Box
(Pb−Free)

MC74HC373ADW SOIC−WIDE 38 Units / Rail


MC74HC373ADWR2 SOIC−WIDE 1000 Units / Reel
MC74HC373ADWR2G SOIC−WIDE 1000 Units / Reel
(Pb−Free)

MC74HC373ADT TSSOP−20* 75 Units / Rail


MC74HC373ADTR2 TSSOP−20* 2500 Units / Reel
MC74HC373AF SOEIAJ−20 1600 Units / Box
MC74HC373AFEL SOEIAJ−20 2000 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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166
MC74HC373A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions VCC V – 55 to 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VIH Minimum High−Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V
Voltage |Iout|  20 A 3.0 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.5 3.15 3.15 3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.0 4.2 4.2 4.2
VIL Maximum Low−Level Input Vout = 0.1 V 2.0 0.5 0.5 0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Voltage |Iout|  20 A 3.0 0.9 0.9 0.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Output Vin = VIH 2.0 1.9 1.9 1.9 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Voltage 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VIH |Iout|  2.4 mA 3.0 2.48 2.34 2.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
|Iout|  6.0 mA 4.5 3.98 3.84 3.7
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Voltage
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Low−Level Output

ÎÎ
Vin = VIL
|Iout|  20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Vin = VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IOZ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Maximum Three−State ÎÎ
Maximum Input Leakage Current

ÎÎ
Vin = VCC or GND
Output in High−Impedance State
6.0
6.0
± 0.1
± 0.5
± 1.0
± 5.0
± 1.0
± 10
A
A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Leakage Current Vin = VIL or VIH
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 A
6.0 4.0 40 160 A

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Guaranteed Limit
– 55 to 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter VCC V Unit
tPLH Maximum Propagation Delay, Input D to Q 2.0 125 155 190 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPHL (Figures 1 and 5) 3.0 80 110 130

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.5 25 31 38
6.0 21 26 32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLH Maximum Propagation Delay, Latch Enable to Q 2.0 140 175 210 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPHL (Figures 2 and 5) 3.0 90 120 140
4.5 28 35 42

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.0 24 30 36

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPLZ Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns
tPHZ (Figures 3 and 6) 3.0 100 125 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 38 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.0 26 33 38
tPZL Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tPZH (Figures 3 and 6) 3.0 100 125 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 38 45
6.0 26 33 38

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(Figures 1 and 5)

ÎÎÎÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎ
2.0
3.0
4.5
60
23
12
75
27
15
90
32
18
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Cout Maximum Three−State Output Capacitance 15 15 15 pF
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Enabled Output)* 36 pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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167
MC74HC373A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
– 55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Fig. Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tsu Minimum Setup Time, Input D to Latch Enable 4 2.0 25 30 40 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 20 25 30
4.5 5.0 6.0 8.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 6.0 7.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
th Minimum Hold Time, Latch Enable to Input D 4 2.0 5.0 5.0 5.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 5.0 5.0 5.0
4.5 5.0 50 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Latch Enable 2 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 23 27 32
4.5 12 15 18

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times 1 2.0 1000 1000 1000 ns
3.0 800 800 800

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎÎ
4.5
6.0
500
400
500
400
500
400

SWITCHING WAVEFORMS

tr tf tw
VCC VCC
90%
INPUT D 50% LATCH ENABLE 50%
10% GND GND
tPLH tPHL tPLH tPHL
90%
Q 50%
10%
Q 50%
tTLH tTHL

Figure 6. Figure 7.

VCC
OUTPUT
50%
ENABLE
GND VALID
tPZL tPLZ VCC
HIGH
INPUT D 50%
IMPEDANCE
Q 50% GND
10% VOL tsu th
tPZH tPHZ VCC
VOH LATCH ENABLE 50%
90%
Q 1.3 V GND
HIGH
IMPEDANCE

Figure 8. Figure 9.

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168
MC74HC373A

TEST CIRCUITS

TEST POINT
TEST POINT

OUTPUT CONNECT TO VCC WHEN


OUTPUT 1 k
TESTING tPLZ AND tPZL.
DEVICE
DEVICE CONNECT TO GND WHEN
UNDER
CL* UNDER TESTING tPHZ AND tPZH.
TEST CL*
TEST

*Includes all probe and jig capacitance


*Includes all probe and jig capacitance

Figure 10. Figure 11.

D0 D1 D2 D3 D4 D5 D6 D7
3 4 7 8 13 14 17 18
D Q D Q D Q D Q D Q D Q D Q D Q

LE LE LE LE LE LE LE LE

11

2 5 6 9 12 15 16 19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7

Figure 12. EXPANDED LOGIC DIAGRAM

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169
MC74HC374A

Octal 3−State Non−Inverting


D Flip−Flop
High−Performance Silicon−Gate CMOS
The MC74HC374A is identical in pinout to the LS374. The device
inputs are compatible with standard CMOS outputs; with pullup
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resistors, they are compatible with LSTTL outputs.
Data meeting the setup time is clocked to the outputs with the rising MARKING
edge of the clock. The Output Enable input does not affect the states of DIAGRAMS
the flip−flops, but when Output Enable is high, the outputs are forced 20
to the high−impedance state; thus, data may be stored even when the PDIP−20
MC74HC374AN
outputs are not enabled. N SUFFIX
AWLYYWW
CASE 738
The HC374A is identical in function to the HC574A which has the 20
1
input pins on the opposite side of the package from the output. This 1
20
device is similar in function to the HC534A which has inverting
SOIC WIDE−20
outputs. 20 DW SUFFIX HC374A
AWLYYWW

1 CASE 751D
Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
20
• Operating Voltage Range: 2.0 to 6.0 V HC
TSSOP−20
• Low Input Current: 1.0 µA 20 DT SUFFIX 374A
• High Noise Immunity Characteristic of CMOS Devices 1 CASE 948E ALYW

• In Compliance with the Requirements Defined by JEDEC Standard 1


No. 7A A = Assembly Location
• Chip Complexity: 266 FETs or 66.5 Equivalent Gates WL = Wafer Lot
YY = Year
LOGIC DIAGRAM WW = Work Week
3 2
D0 Q0 PIN ASSIGNMENT
4 5
D1 Q1 OUTPUT 1 20 VCC
7 6 ENABLE
D2 Q2
Q0 2 19 Q7
8 9
DATA D3 Q3 NONINVERTING D0 3 18 D7
INPUTS 13 12
D4 Q4 OUTPUTS
D1 4 17 D6
14
D5 15
Q5 Q1 5 16 Q6
17
D6 16
Q6 Q2 6 15 Q5
18
D7 19
Q7 D2 7 14 D5
11
CLOCK D3 8 13 D4
Q3 9 12 Q4
PIN 20 = VCC
1 PIN 10 = GND GND 10 11 CLOCK
OUTPUT ENABLE
FUNCTION TABLE
Inputs Output
ORDERING INFORMATION
Output
Enable Clock D Q Device Package Shipping
L H H MC74HC374AN PDIP−20 1440 / Box
L L L
MC74HC374ADW SOIC−WIDE 38 / Rail
L L,H, X No Change
H X X Z MC74HC374ADWR2 SOIC−WIDE 1000 / Reel

X = don’t care MC74HC374ADT TSSOP−20 75 / Rail


Z = high impedance MC74HC374ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 170 Publication Order Number:


May, 2000 − Rev. 9 MC74HC374A/D
MC74HC374A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.50 1.50 1.50 V
Voltage |Iout|  20 µA 3.0 2.10 2.10 2.10

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
3.15
4.20
3.15
4.20
3.15
4.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 0.50 0.50 0.50 V
Voltage |Iout|  20 µA 3.0 0.90 0.90 0.90

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 1.80 1.80 1.80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.90 1.90 1.90 V
Voltage |Iout|  20 µA 4.5 4.40 4.40 4.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.90 5.90 5.90

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 2.48 2.34 2.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  6.0 mA 4.5 2.98 3.84 3.70 V
|Iout|  7.8 mA 6.0 5.48 5.34 5.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VOL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
2.0
4.5
0.10
0.10
0.10
0.10
0.10
0.10
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.10 0.10 0.10
Vin = VIH or VIL |Iout|  2.4 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3.0 0.26 0.33 0.40
|Iout|  6.0 mA 4.5 0.26 0.33 0.40 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.40

http://onsemi.com
171
MC74HC374A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
IOZ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Three−State

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Leakage Current
ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA
Current (per Package) Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ Parameter
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎÎÎ
ÎÎÎ
2.0
3.0
4.5
6
15
30
5
10
24
4
8
20
MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Input Clock to Q
6.0
2.0
35
125
28
155
24
190 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 1 and 5) 3.0 80 110 130
4.5 25 31 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Output Enable to Q
6.0
2.0
21
150
26
190
32
225 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHZ (Figures 3 and 6) 3.0 100 125 150
4.5 30 38 45

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 26 33 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHZ (Figures 3 and 6) 3.0 100 125 150
4.5 30 38 45

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 26 33 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH Maximum Output Transition Time, Any Output 2.0 75 95 110 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL (Figures 1 and 5) 3.0 27 32 36
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cout Maximum Three−State Output Capacitance 15 15 15 pF
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 34 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
172
MC74HC374A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
– 55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Fig. Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tsu Minimum Setup Time, Data to Clock 3 2.0 50 65 75 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 40 50 60
4.5 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 9 11 13

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
th Minimum Hold Time, Clock to Data 3 2.0 5.0 5.0 5.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 5.0 50 5.0
4.5 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Clock 1 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 23 27 32
4.5 12 15 18

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times 1 2.0 1000 1000 1000 ns
3.0 800 800 800

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎÎ
4.5
6.0
500
400
500
400
500
400

SWITCHING WAVEFORMS

tr tf VCC
VCC OUTPUT
90% 50%
ENABLE
50% GND
CLOCK
10% GND tPZL tPLZ
HIGH
tW IMPEDANCE
1/fmax Q 50%
10% VOL
tPLH tPHL
tPZH tPHZ
90%
Q 90% VOH
50% Q
10% 50%
HIGH
tTLH tTHL IMPEDANCE

Figure 1. Figure 2.

VALID
VCC

DATA 50%

GND

tsu th

VCC
CLOCK 50%

GND

Figure 3.

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173
MC74HC374A

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 4. Figure 5.

EXPANDED LOGIC DIAGRAM

D0 D1 D2 D3 D4 D5 D6 D7
3 4 7 8 13 14 17 18
D Q D Q D Q D Q D Q D Q D Q D Q

C C C C C C C C

11
Clock

Output 1
Enable
2 5 6 9 12 15 16 19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7

http://onsemi.com
174
MC74HC390A

Dual 4−Stage Binary Ripple


Counter with ÷ 2 and ÷ 5
Sections
High−Performance Silicon−Gate CMOS
The MC74HC390A is identical in pinout to the LS390. The device http://onsemi.com
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs. MARKING
This device consists of two independent 4−bit counters, each DIAGRAMS
composed of a divide−by−two and a divide−by−five section. The 16
divide−by−two and divide−by−five counters have separate clock PDIP−16
N SUFFIX MC74HC390AN
inputs, and can be cascaded to implement various combinations of ÷ 2 16
CASE 648
AWLYYWW
and/or ÷ 5 up to a ÷ 100 counter. 1
1
Flip−flops internal to the counters are triggered by high−to−low
16
transitions of the clock input. A separate, asynchronous reset is SO−16
provided for each 4−bit counter. State changes of the Q outputs do not HC390A
D SUFFIX
occur simultaneously because of internal ripple delays. Therefore, 16 AWLYWW
CASE 751B
1
decoded output signals are subject to decoding spikes and should not 1
be used as clocks or strobes except when gated with the Clock of the 16
HC390A.
HC
• Output Drive Capability: 10 LSTTL Loads 16
TSSOP−16
DT SUFFIX 390A
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
CASE 948F ALYW

• Operating Voltage Range: 2 to 6 V 1


• Low Input Current: 1 µA A = Assembly Location
• High Noise Immunity Characteristic of CMOS Devices WL = Wafer Lot
YY = Year
• In Compliance with the Requirements Defined by JEDEC Standard WW = Work Week
No 7A
• Chip Complexity: 244 FETs or 61 Equivalent Gates PIN ASSIGNMENT
LOGIC DIAGRAM
CLOCK Aa 1 16 VCC
RESET a 2 15 CLOCK Ab
1, 15 ÷2 3, 13
CLOCK A QA QAa 3 14 RESET b
COUNTER
CLOCK Ba 4 13 QAb
QBa 5 12 CLOCK Bb
5, 11 QCa 6 11 QBb
QB
4, 12 ÷5 6, 10
CLOCK B QC QDa 7 10 QCb
COUNTER 7, 9
QD
GND 8 9 QDb

PIN 16 = VCC
2, 14 PIN 8 = GND
RESET
FUNCTION TABLE
Clock
ORDERING INFORMATION
A B Reset Action Device Package Shipping
X X H Reset MC74HC390AN PDIP−16 2000 / Box
÷ 2 and ÷ 5
MC74HC390AD SOIC−16 48 / Rail
X L Increment
÷2 MC74HC390ADR2 SOIC−16 2500 / Reel
X L Increment MC74HC390ADT TSSOP−16 96 / Rail
÷5 MC74HC390ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 175 Publication Order Number:


March, 2000 − Rev. 2 MC74HC390A/D
MC74HC390A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 1) VCC = 3.0 V 0 600

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
1.5
2.1
1.5
2.1
1.5
2.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
4.5
0.5
0.9
1.35
0.5
0.9
1.35
0.5
0.9
1.35
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VOH ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Minimum High−Level Output Vin = VIH or VIL
6.0
2.0
1.8
1.9
1.8
1.9
1.8
1.9 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
|Iout|  4.0 mA
3.0
4.5
2.48
3.98
2.34
3.84
2.20
3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 µA 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ Vin = VIH or VIL |Iout|  2.4 mA
6.0
3.0
0.1
0.26
0.1
0.33
0.1
0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 0.26 0.33 0.40
|Iout|  5.2 mA 6.0 0.26 0.33 0.40

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176
MC74HC390A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4 40 160

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
µA

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tf = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
4.5
10
15
30
9
14
28
8
12
25
MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 50 45 40

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock A to QA 2.0 70 80 90 ns
tPHL (Figures 1 and 3) 3.0 40 45 50

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
24
20
30
26
36
31

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock A to QC 2.0 200 250 300 ns
tPHL (QA connected to Clock B) 3.0 160 185 210

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3) 4.5 58 65 70
6.0 49 62 68

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock B to QB

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
70
40
80
45
90
50
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 26 33 39
6.0 22 28 33

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock B to QC

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
4.5
90
56
37
105
70
46
180
100
56
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 31 39 48

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock B to QD 2.0 70 80 90 ns
tPHL (Figures 1 and 3) 3.0 40 45 50

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
26
22
33
28
39
33

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL Maximum Propagation Delay, Reset to any Q 2.0 80 95 110 ns
(Figures 2 and 3) 3.0 48 65 75

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 30 38 44
6.0 26 33 39

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
75
27
95
32
110
36
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 15 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance — 10 10 10 pF
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Counter)* 35 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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177
MC74HC390A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
trec Minimum Recovery Time, Reset Inactive to Clock A or Clock B 2.0 25 30 40 ns
(Figure 2) 3.0 15 20 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 9 11 13

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock A, Clock B 2.0 75 95 110 ns
(Figure 1) 3.0 27 32 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 15 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Reset 2.0 75 95 110 ns
(Figure 2) 3.0 27 32 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 20 24 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 18 22 28

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tf, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figure 1) 3.0 800 800 800

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

PIN DESCRIPTIONS
INPUTS OUTPUTS
Clock A (Pins 1, 15) and Clock B (Pins 4, 15) QA (Pins 3, 13)
Clock A is the clock input to the ÷ 2 counter; Clock B is Output of the ÷ 2 counter.
the clock input to the ÷ 5 counter. The internal flip−flops are
toggled by high−to−low transitions of the clock input. QB, QC, QD (Pins 5, 6, 7, 9, 10, 11)
Outputs of the ÷ 5 counter. QD is the most significant bit.
CONTROL INPUTS QA is the least significant bit when the counter is connected
Reset (Pins 2, 14) for BCD output as in Figure 4. QB is the least significant bit
Asynchronous reset. A high at the Reset input prevents when the counter is operating in the bi−quinary mode as in
counting, resets the internal flip−flops, and forces QA Figure 5.
through QD low.
SWITCHING WAVEFORMS
tf tr tw
90% VCC VCC
CLOCK 50% 50%
RESET
10% 10% GND GND
tw tPHL
1/fmax
tPLH tPHL Q 50%

90%
Q 50% trec
10% VCC
CLOCK 50%
tTLH tTHL
GND
Figure 1. Figure 2.

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178
MC74HC390A

TEST CIRCUIT
TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance


Figure 3.

EXPANDED LOGIC DIAGRAM


1, 15 Q
CLOCK A C
3, 13
D Q QA
R

4, 12
CLOCK B C Q
5, 11
D Q QB
R

C Q
6, 10 Q
D Q C
R

C
7, 9 Q
D Q D
R
2, 14
RESET

TIMING DIAGRAM
(QA Connected to Clock B)

0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6
CLOCK A

RESET

QA

QB

QC

QD

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179
MC74HC390A

APPLICATIONS INFORMATION

Each half of the MC54/74HC390A has independent ÷ 2 To obtain a bi−quinary count sequence, the input signals
and ÷ 5 sections (except for the Reset function). The ÷ 2 and connected to the Clock B input, and output QD is connected
÷ 5 counters can be connected to give BCD or bi−quinary to the Clock A input (Figure 5). QA provides a 50% duty
(2−5) count sequences. If Output QA is connected to the cycle output. The bi−quinary count sequence function table
Clock B input (Figure 4), a decade divider with BCD output is given in Table 2.
is obtained. The function table for the BCD count sequence
is given in Table 1.

Table 1. BCD Count Sequence* Table 2. Bi−Quinary Count Sequence**


Output Output

Count QD QC QB QA Count QA QD QC QB
0 L L L L 0 L L L L
1 L L L H 1 L L L H
2 L L H L 2 L L H L
3 L L H H 3 L L H H
4 L H L L 4 L H L L
5 L H L H 8 H L L L
6 L H H L 9 H L L H
7 L H H H 10 H L H L
8 H L L L 11 H L H H
9 H L L H 12 H H L L
*QA connected to Clock B input. ** QD connected to Clock A input.

CONNECTION DIAGRAMS

1, 15 3, 13 1, 15 3, 13
÷2 QA ÷2 QA
CLOCK A CLOCK A
COUNTER COUNTER

5, 11 5, 11 QB
QB 4, 12
CLOCK B 4, 12 CLOCK B ÷5 6, 10
÷5 6, 10
QC COUNTER QC
COUNTER 7, 9 7, 9
QD QD

2, 14 2, 14
RESET RESET

Figure 4. BCD Count Figure 5. Bi-Quinary Count

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180
MC74HC393A

Dual 4−Stage Binary Ripple


Counter
High−Performance Silicon−Gate CMOS
The MC74HC393A is identical in pinout to the LS393. The device
inputs are compatible with standard CMOS outputs; with pullup
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resistors, they are compatible with LSTTL outputs.
This device consists of two independent 4−bit binary ripple counters MARKING
with parallel outputs from each counter stage. A ÷ 256 counter can be DIAGRAMS
obtained by cascading the two binary counters. 14
Internal flip−flops are triggered by high−to−low transitions of the PDIP−14
N SUFFIX MC74HC393AN
clock input. Reset for the counters is asynchronous and active−high. CASE 646 AWLYYWW
State changes of the Q outputs do not occur simultaneously because of
1
internal ripple delays. Therefore, decoded output signals are subject to 14
decoding spikes and should not be used as clocks or as strobes except SOIC−14
HC393A
when gated with the Clock of the HC393A. D SUFFIX
AWLYWW
CASE 751A
• Output Drive Capability: 10 LSTTL Loads
1
• Outputs Directly Interface to CMOS, NMOS, and TTL 14
• Operating Voltage Range: 2 to 6 V TSSOP−14 HC
• Low Input Current: 1 µA DT SUFFIX 393A

• CASE 948G ALYW


High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard 1
A = Assembly Location
No. 7A
WL or L = Wafer Lot
• Chip Complexity: 236 FETs or 59 Equivalent Gates YY or Y = Year
WW or W = Work Week
LOGIC DIAGRAM
PIN ASSIGNMENT
3, 11
Q1
4, 10 CLOCK a 1 14 VCC
1, 13 BINARY Q2
CLOCK 5, 9 RESET a 2 13 CLOCK b
COUNTER Q3
6, 8 Q1a 3 12 RESET b
Q4
Q2a 4 11 Q1b
2, 12 Q3a
RESET 5 10 Q2b
Q4a 6 9 Q3b
PIN 14 = VCC
PIN 7 = GND GND 7 8 Q4b

FUNCTION TABLE
Inputs
Clock Reset Outputs
ORDERING INFORMATION
X H L
H L No Change Device Package Shipping
L L No Change MC74HC393AN PDIP−14 2000 / Box
L No Change
L Advance to MC74HC393AD SOIC−14 55 / Rail
Next State MC74HC393ADR2 SOIC−14 2500 / Reel
MC74HC393ADT TSSOP−14 96 / Rail
MC74HC393ADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 181 Publication Order Number:


March, 2000 − Rev. 2 MC74HC393A/D
MC74HC393A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ
VCC = 3.0 V 0 600
(Figure 1) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
1.5
2.1
1.5
2.1
1.5
2.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
2.0
4.5
1.9
4.4
1.9
4.4
1.9
4.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9
Vin = VIH or VIL |Iout|  2.4 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
3.0 2.48 2.34 2.20
|Iout|  4.0 mA 4.5 3.98 3.84 3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.48 5.34 5.20

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182
MC74HC393A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 µA 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 0.26 0.33 0.40
|Iout|  5.2 mA 6.0 0.26 0.33 0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current (per Package) Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
V 25C  85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Unit
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 10 9 8 MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
(Figures 1 and 3)

ÎÎÎÎ
ÎÎÎ
3.0
4.5
6.0
15
30
50
14
28
45
12
25
40

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q1

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
70
40
80
45
90
50
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 24 30 36
6.0 20 26 31

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q2

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
100
56
105
70
180
100
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 34 45 55
6.0 20 38 48

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q3

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
130
80
150
105
180
130
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 44 55 70
6.0 37 47 58

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q4

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 3)
2.0
3.0
160
110
250
185
300
210
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 52 65 82
6.0 44 55 65

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Reset to any Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 3)
2.0
3.0
4.5
80
48
30
95
65
38
110
75
50
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH, ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Output Transition Time, Any Output
6.0
2.0
26
75
33
95
43
110 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL (Figures 1 and 3) 3.0 27 32 36
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Cin
NOTES:
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance
6.0

13
10
16
10
19
10 pF

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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183
MC74HC393A

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Counter)* 35 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 25 30 40 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 2) 3.0 15 20 30
4.5 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 9 11 13

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock 2.0 75 95 110 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 1) 3.0 27 32 36
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 15 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Reset 2.0 75 95 110 ns
(Figure 2) 3.0 27 32 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
15
13
19
15
22
19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figure 1) 3.0 800 800 800

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
500
400
500
400
500
400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

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184
MC74HC393A

PIN DESCRIPTIONS

INPUTS OUTPUTS
Clock (Pins 1, 13) Q1, Q2, Q3, Q4 (Pins 3, 4, 5, 6, 8, 9, 10, 11)
Clock input. The internal flip−flops are toggled and the Parallel binary outputs Q4 is the most significant bit.
counter state advances on high−to−low transitions of the
clock input.

CONTROL INPUTS
Reset (Pins 2, 12)
Active−high, asynchronous reset. A separate reset is
provided for each counter. A high at the Reset input prevents
counting and forces all four outputs low.

SWITCHING WAVEFORMS
tf tr tw
90% VCC
VCC
CLOCK 50% RESET 50%
10%
GND GND
tw tPHL
1/fmax
tPLH tPHL 50%
Q
90%
Q 50% trec
10% VCC
CLOCK 50%
GND
tTLH tTHL

Figure 1. Figure 2.

TEST EXPANDED LOGIC DIAGRAM


POINT
1, 13
OUTPUT CLOCK C Q
DEVICE 3, 11
D Q Q1
UNDER
TEST CL*

C Q
4, 10
D Q Q2
*Includes all probe and jig capacitance

Figure 3. Test Circuit


C Q
5, 9
D Q Q3

C Q
6, 8
D Q Q4

2, 12
RESET

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185
MC74HC393A

TIMING DIAGRAM

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0

CLOCK

RESET

Q1

Q2

Q3

Q4

COUNT SEQUENCE
Outputs

Count Q4 Q3 Q2 Q1
0 L L L L
1 L L L H
2 L L H L
3 L L H H
4 L H L L
5 L H L H
6 L H H L
7 L H H H
8 H L L L
9 H L L H
10 H L H L
11 H L H H
12 H H L L
13 H H L H
14 H H H L
15 H H H H

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186
MC74HC4020A

14−Stage Binary Ripple


Counter
High−Performance Silicon−Gate CMOS
The MC74C4020A is identical in pinout to the standard CMOS
MC14020B. The device inputs are compatible with standard CMOS
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outputs; with pullup resistors, they are compatible with LSTTL
outputs. MARKING
This device consists of 14 master−slave flip−flops with 12 stages DIAGRAMS
brought out to pins. The output of each flip−flop feeds the next and the 16
frequency at each output is half of that of the preceding one. Reset is PDIP−16
N SUFFIX MC74HC4020AN
asynchronous and active−high. 16 AWLYYWW
CASE 648
State changes of the Q outputs do not occur simultaneously because 1
of internal ripple delays. Therefore, decoded output signals are subject 1
to decoding spikes and may have to be gated with the Clock of the 16
HC4020A for some designs. SO−16
HC4020A
D SUFFIX
• Output Drive Capability: 10 LSTTL Loads
16
CASE 751B
AWLYWW
1
• Outputs Directly Interface to CMOS, NMOS, and TTL 1

• Operating Voltage Range: 2 to 6 V 16

• Low Input Current: 1 µA TSSOP−16 HC40

• 16 DT SUFFIX 20A
High Noise Immunity Characteristic of CMOS Devices ALYW
CASE 948F
• In Compliance With JEDEC Standard No. 7A Requirements 1
1
• Chip Complexity: 398 FETs or 99.5 Equivalent Gates
A = Assembly Location
WL = Wafer Lot
LOGIC DIAGRAM YY = Year
9 WW = Work Week
Q1
7
Q4
5 FUNCTION TABLE
Q5
4
Q6 Clock Reset Output State
10 6
Clock Q7
13 L No Charge
Q8
12 L Advance to Next State
Q9
14 X H All Outputs Are Low
Q10
15
Q11
1
Q12
2
Q13
3
Q14
ORDERING INFORMATION
11 Pin 16 = VCC
Reset Device Package Shipping
Pin 8 = GND
MC74HC4020AN PDIP−16 2000 / Box
VCC Q11 Q10 Q8 Q9 Reset Clock Q1
MC74HC4020AD SOIC−16 48 / Rail
16 15 14 13 12 11 10 9
MC74HC4020ADR2 SOIC−16 2500 / Reel
MC74HC4020ADT TSSOP−16 96 / Rail
Pinout: 16−Lead Plastic Package
MC74HC4020ADTR2 TSSOP−16 2500 / Reel
(Top View)

1 2 3 4 5 6 7 8
Q12 Q13 Q14 Q6 Q5 Q7 Q4 GND

 Semiconductor Components Industries, LLC, 2001 187 Publication Order Number:


September, 2001 − Rev. 3 MC74HC4020A/D
MC74HC4020A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

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Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

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cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

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ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

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Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

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SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

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Unused outputs must be left open.
Tstg Storage Temperature Range – 65 to + 150 C

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TL

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Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package
*Maximum Ratings are those values beyond which damage to the device may occur.
260
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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RECOMMENDED OPERATING CONDITIONS

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Symbol Parameter Min Max Unit

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VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

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Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

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TA Operating Temperature Range, All Package Types – 55 + 125 C

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tr, tf Input Rise/Fall Time VCC = 2.0 V 0 1000 ns

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(Figure 1) VCC = 3.0 V 0 600
VCC = 4.5 V 0 500

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VCC = 6.0 V 0 400

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40

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188
MC74HC4020A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA
Current (per Package) Iout = 0µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 10 9.0 8.0 MHz
(Figures 1 and 4) 3.0 15 14 12
4.5 30 28 25
6.0 50 50 40
tPLH, Maximum Propagation Delay, Clock to Q1* 2.0 96 106 115 ns
tPHL (Figures 1 and 4) 3.0 63 71 88
4.5 31 36 40
6.0 25 30 35
tPHL Maximum Propagation Delay, Reset to Any Q 2.0 45 52 65 ns
(Figures 2 and 4) 3.0 30 36 40
4.5 30 35 40
6.0 26 32 35
tPLH, Maximum Propagation Delay, Qn to Qn+1 2.0 69 80 90 ns
tPHL (Figures 3 and 4) 3.0 40 45 50
4.5 17 21 28
6.0 14 15 22
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 4) 3.0 27 32 36
4.5 15 19 22
6.0 13 15 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
* For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations:
VCC = 2.0 V: tP = [93.7 + 59.3 (n−1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n−1)] ns
VCC = 3.0 V: tP = [61.5 + 34.4 (n−1)] ns VCC = 6.0 V: tP = [24.4 + 12 (n−1)] ns

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 38 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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189
MC74HC4020A

TIMING REQUIREMENTS (Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 30 40 50 ns
(Figure 2) 3.0 20 25 30
4.5 5 8 12
6.0 4 6 9
tw Minimum Pulse Width, Clock 2.0 70 80 90 ns
(Figure 1) 3.0 40 45 50
4.5 15 19 24
6.0 13 16 20
tw Minimum Pulse Width, Reset 2.0 70 80 90 ns
(Figure 2) 3.0 40 45 50
4.5 15 19 24
6.0 13 16 20
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figure 1) 3.0 800 800 800
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

PIN DESCRIPTIONS

INPUTS OUTPUTS
Clock (Pin 10) Q1, Q4—Q14 (Pins 9, 7, 5, 4, 6, 13, 12, 14, 15, 1, 2, 3)
Negative−edge triggering clock input. A high−to−low Active−high outputs. Each Qn output divides the Clock
transition on this input advances the state of the counter. input frequency by 2N.
Reset (Pin 11)
Active−high reset. A high level applied to this input
asynchronously resets the counter to its zero state, thus
forcing all Q outputs low.

SWITCHING WAVEFORMS

tf tr VCC
VCC Clock 50%
90%
Clock 50% GND
10% trec
GND
tw tw
VCC
1/fMAX
tPLH tPHL Reset 50%
GND
90% tPHL
Q1 50%
10%
Any Q 50%
tTLH tTHL

Figure 1. Figure 2.

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190
MC74HC4020A

SWITCHING WAVEFORMS (continued)

TEST
POINT

VCC
Qn OUTPUT
50%
DEVICE
GND UNDER
tPLH tPHL TEST CL*

Qn+1 50%

*Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

Q1 Q4 Q5 Q12 Q13 Q14


9 7 5 1 2 3

10
Clock C Q C Q C Q C Q C Q C Q

C Q C Q C Q C Q C Q C

R R

11
Reset
Q6 = Pin 4 Q9 = Pin 12 VCC = Pin 16
Q7 = Pin 6 Q10 = Pin 14 GND = Pin 8
Q8 = Pin 13 Q11 = Pin 15

Figure 5. Expanded Logic Diagram

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191
MC74HC4020A

1 2 4 8 16 32 64 128 256 512 1024 2048 4096 8192 16384


Clock
Reset

Q4

Q5

Q6

Q7

Q8

Q9

Q10

Q12

Q13

Q14

Figure 6. Timing Diagram

APPLICATIONS INFORMATION

Time−Base Generator feeds the HC4020A. Selecting outputs Q5, Q10, Q11, and
A 60Hz sinewave obtained through a 1.0 Megohm resistor Q12 causes a reset every 3600 clocks. The HC20 decodes the
connected directly to a standard 120 Vac power line is counter outputs, produces a single (narrow) output pulse,
applied to the input of the MC54/74HC14A, Schmitt-trigger and resets the binary counter. The resulting output frequency
inverter. The HC14A squares−up the input waveform and is 1.0 pulse/minute.

VCC VCC

1/6 of HC14A
1.0M HC4020A
13
Clock Q5
12 1.0 Pulse/Minute
1
≥20pF Q10 8 2 6 Output
120Vac 1/2 1/2
4
60Hz 10 HC20 HC20
5
Q11
9
Q12
NOTE: Ground MUST be isolated
by a transformer or
opto−isolator for safety
reasons.

Figure 7. Time−Base Generator

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192
MC74HC4040A

12−Stage Binary Ripple


Counter
High−Performance Silicon−Gate CMOS
The MC74C4040A is identical in pinout to the standard CMOS
MC14040. The device inputs are compatible with standard CMOS
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outputs; with pullup resistors, they are compatible with LSTTL
outputs. MARKING
This device consists of 12 master−slave flip−flops. The output of DIAGRAMS
each flip−flop feeds the next and the frequency at each output is half of 16
that of the preceding one. The state counter advances on the PDIP−16
N SUFFIX MC74HC4040AN
negative−going edge of the Clock input. Reset is asynchronous and 16 AWLYYWW
CASE 648
active−high. 1
State changes of the Q outputs do not occur simultaneously because 1
of internal ripple delays. Therefore, decoded output signals are subject 16
to decoding spikes and may have to be gated with the Clock of the SO−16
HC4040A
D SUFFIX
HC4040A for some designs. 16
CASE 751B
AWLYWW

• Output Drive Capability: 10 LSTTL Loads


1
1
• Outputs Directly Interface to CMOS, NMOS, and TTL 16

• Operating Voltage Range: 2 to 6 V TSSOP−16 HC40


• Low Input Current: 1 µA 16 DT SUFFIX 40A
ALYW
CASE 948F
• High Noise Immunity Characteristic of CMOS Devices 1

• In Compliance With JEDEC Standard No. 7A Requirements 1

• Chip Complexity: 398 FETs or 99.5 Equivalent Gates


A
WL
= Assembly Location
= Wafer Lot
YY = Year
LOGIC DIAGRAM WW = Work Week
9
Q1
7 FUNCTION TABLE
Q2
6
Q3 Clock Reset Output State
5
Q4
3 L No Charge
10 Q5
Clock 2 L Advance to Next State
Q6
4 X H All Outputs Are Low
Q7
13
Q8
12
Q9
14
Q10
15
Q11 ORDERING INFORMATION
1
Q12
Device Package Shipping
11 Pin 16 = VCC
Reset MC74HC4040AN PDIP−16 2000 / Box
Pin 8 = GND
MC74HC4040AD SOIC−16 48 / Rail
VCC Q11 Q10 Q8 Q9 Reset Clock Q1 MC74HC4040ADR2 SOIC−16 2500 / Reel
16 15 14 13 12 11 10 9 MC74HC4040ADT TSSOP−16 96 / Rail
MC74HC4040ADTR2 TSSOP−16 2500 / Reel
Pinout: 16−Lead Plastic Package
(Top View)

1 2 3 4 5 6 7 8
Q12 Q6 Q5 Q7 Q4 Q3 Q2 GND

 Semiconductor Components Industries, LLC, 2001 193 Publication Order Number:


September, 2001 − Rev. 4 MC74HC4040A/D
MC74HC4040A

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MAXIMUM RATINGS*

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Symbol
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Parameter Value Unit This device contains protection

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ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

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Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

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be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

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ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

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ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

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ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

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Unused outputs must be left open.
Tstg Storage Temperature Range – 65 to + 150 C

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TL

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package
*Maximum Ratings are those values beyond which damage to the device may occur.
260
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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Symbol
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RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

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VCC

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Vin, Vout
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DC Supply Voltage (Referenced to GND)

ÎÎ
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DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

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TA
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tr, tf
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Operating Temperature Range, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

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ÎÎÎ ÎÎÎ
ÎÎ
(Figure 1) VCC = 3.0 V 0 600

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VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40

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194
MC74HC4040A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA
Current (per Package) Iout = 0µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 10 9.0 8.0 MHz
(Figures 1 and 4) 3.0 15 14 12
4.5 30 28 25
6.0 50 45 40
tPLH, Maximum Propagation Delay, Clock to Q1* 2.0 96 106 115 ns
tPHL (Figures 1 and 4) 3.0 63 71 88
4.5 31 36 40
6.0 25 30 35
tPHL Maximum Propagation Delay, Reset to Any Q 2.0 45 52 65 ns
(Figures 2 and 4) 3.0 30 36 40
4.5 30 35 40
6.0 26 32 35
tPLH, Maximum Propagation Delay, Qn to Qn+1 2.0 69 80 90 ns
tPHL (Figures 3 and 4) 3.0 40 45 50
4.5 17 21 28
6.0 14 15 22
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 4) 3.0 27 32 36
4.5 15 19 22
6.0 13 15 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
* For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations:
VCC = 2.0 V: tP = [93.7 + 59.3 (n−1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n−1)] ns
VCC = 3.0 V: tP = [61.5 + 34.4 (n−1)] ns VCC = 6.0V: tP = [24.4 + 12 (n−1)] ns

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 31 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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195
MC74HC4040A

TIMING REQUIREMENTS (Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 30 40 50 ns
(Figure 2) 3.0 20 25 30
4.5 5 8 12
6.0 4 6 9
tw Minimum Pulse Width, Clock 2.0 70 80 90 ns
(Figure 1) 3.0 40 45 50
4.5 15 19 24
6.0 13 16 20
tw Minimum Pulse Width, Reset 2.0 70 80 90 ns
(Figure 2) 3.0 40 45 50
4.5 15 19 24
6.0 13 16 20
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figure 1) 3.0 800 800 800
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

PIN DESCRIPTIONS

INPUTS OUTPUTS
Q1 thru Q12 (Pins 9, 7, 6, 5, 3, 2, 4, 13, 12, 14, 15, 1)
Clock (Pin 10)
Negative−edge triggering clock input. A high−to−low Active−high outputs. Each Qn output divides the Clock
transition on this input advances the state of the counter. input frequency by 2N.

Reset (Pin 11)


Active−high reset. A high level applied to this input
asynchronously resets the counter to its zero state, thus
forcing all Q outputs low.

SWITCHING WAVEFORMS

tf tr VCC
VCC Clock 50%
90%
Clock 50% GND
10% trec
GND
tw tw
VCC
1/fMAX
tPLH tPHL Reset 50%
GND
90% tPHL
Q1 50%
10%
Any Q 50%
tTLH tTHL

Figure 1. Figure 2.

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196
MC74HC4040A

SWITCHING WAVEFORMS (continued)

TEST
POINT

VCC
Qn OUTPUT
50%
DEVICE
GND UNDER
tPLH tPHL TEST CL*

Qn+1 50%

*Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

Q1 Q2 Q3 Q10 Q11 Q12


9 7 6 14 15 1

10
Clock C Q C Q C Q C Q C Q C Q

C Q C Q C Q C Q C Q C

R R

11
Reset
Q4 = Pin 5 Q7 = Pin 4 VCC = Pin 16
Q5 = Pin 3 Q8 = Pin 13 GND = Pin 8
Q6 = Pin 2 Q9 = Pin 12

Figure 5. Expanded Logic Diagram

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197
MC74HC4040A

1 2 4 8 16 32 64 128 256 512 1024 2048 4096


Clock
Reset

Q1

Q2

Q3

Q4

Q5

Q6

Q7

Q8

Q9

Q10

Q11

Q12

Figure 6. Timing Diagram

APPLICATIONS INFORMATION

Time−Base Generator waveform and feeds the HC4040A. Selecting outputs Q5,
A 60Hz sinewave obtained through a 100 K resistor Q10, Q11, and Q12 causes a reset every 3600 clocks. The
connected to a 120 Vac power line through a step down HC20 decodes the counter outputs, produces a single
transformer is applied to the input of the MC54/74HC14A, (narrow) output pulse, and resets the binary counter. The
Schmitt-trigger inverter. The HC14A squares−up the input resulting output frequency is 1.0 pulse/minute.

VCC

1.0M HC4040A
13
Clock Q5
12 1.0 Pulse/Minute
1
≥20pF Q10 8 2 6 Output
120Vac 1/2 1/2
4
60Hz 10 HC20 HC20
5
Q11
9
Q12
NOTE: Ground MUST be isolated
by a transformer or
opto−isolator for safety
reasons.

Figure 7. Time−Base Generator

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198
MC74HC4046A

Phase−Locked Loop
High−Performance Silicon−Gate CMOS
The MC74HC4046A is similar in function to the MC14046 Metal
gate CMOS device. The device inputs are compatible with standard
CMOS outputs; with pullup resistors, they are compatible with
LSTTL outputs. http://onsemi.com
The HC4046A phase−locked loop contains three phase
comparators, a voltage−controlled oscillator (VCO) and unity gain MARKING
op−amp DEM OUT. The comparators have two common signal inputs, DIAGRAMS
COMP IN, and SIG IN. Input SIG IN and COMP IN can be used directly 16
PDIP−16
coupled to large voltage signals, or indirectly coupled (with a series MC74HC4046AN
N SUFFIX
capacitor to small voltage signals). The self−bias circuit adjusts small 16
CASE 648
AWLYYWW
voltage signals in the linear region of the amplifier. Phase comparator 1
1
1 (an exclusive OR gate) provides a digital error signal PC1 OUT and 16
maintains 90 degrees phase shift at the center frequency between SO−16
SIG IN and COMP IN signals (both at 50% duty cycle). Phase HC4046A
D SUFFIX
16 AWLYWW
comparator 2 (with leading−edge sensing logic) provides digital error CASE 751B
1
signals PC2 OUT and PCP OUT and maintains a 0 degree phase shift 1
between SIG IN and COMP IN signals (duty cycle is immaterial). The 16
linear VCO produces an output signal VCOOUT whose frequency is HC40
TSSOP−16
determined by the voltage of input VCO IN signal and the capacitor 16 DT SUFFIX 46A
and resistors connected to pins C1A, C1B, R1 and R2. The unity gain CASE 948F ALYW
1
op−amp output DEM OUT with an external resistor is used where the
1
VCO IN signal is needed but no loading can be tolerated. The inhibit 16
input, when high, disables the VCO and all op−amps to minimize
SOEIAJ−16
standby power consumption. F SUFFIX 74HC4046B
Applications include FM and FSK modulation and demodulation, 16 AWLYWW
CASE 966
frequency synthesis and multiplication, frequency discrimination, 1
1
tone decoding, data synchronization and conditioning,
voltage−to−frequency conversion and motor speed control. A = Assembly Location
WL = Wafer Lot
• Output Drive Capability: 10 LSTTL Loads YY = Year
• Low Power Consumption Characteristic of CMOS Devices WW = Work Week
• Operating Speeds Similar to LSTTL
• Wide Operating Voltage Range: 3.0 to 6.0 V
• Low Input Current: 1.0 µA Maximum (except SIGIN and COMPIN) ORDERING INFORMATION
• In Compliance with the Requirements Defined by JEDEC Standard Device Package Shipping
No. 7A
MC74HC4046AN PDIP−16 2000 / Box
• Low Quiescent Current: 80 µA Maximum (VCO disabled)
MC74HC4046AD SOIC−16 48 / Rail
• High Noise Immunity Characteristic of CMOS Devices
MC74HC4046ADR2 SOIC−16 2500 / Reel
• Diode Protection on all Inputs
MC74HC4046AF SOIC−EIAJ See Note 1
• Chip Complexity: 279 FETs or 70 Equivalent Gates
MC74HC4046AFEL SOIC−EIAJ See Note 1
1. For ordering information on the EIAJ version of the
SOIC packages, please contact your local ON
Semiconductor representative.

 Semiconductor Components Industries, LLC, 2000 199 Publication Order Number:


March, 2000 − Rev. 7 MC74HC4046A/D
MC74HC4046A

Pin No. Symbol Name and Function


1 PCPOUT Phase Comparator Pulse Output PIN ASSIGNMENT
2 PC1OUT Phase Comparator 1 Output
3 COMPIN Comparator Input PCPout 1 16 VCC
4 VCOOUT VCO Output PC1out 2 15 PC3out
5 INH Inhibit Input
6 C1A Capacitor C1 Connection A COMPin 3 14 SIGin
7 C1B Capacitor C1 Connection B VCOout 4 13 PC2out
8 GND Ground (0 V) VSS
9 VCOIN VCO Input INH 5 12 R2
10 DEMOUT Demodulator Output C1A 6 11 R1
11 R1 Resistor R1 Connection
12 R2 Resistor R2 Connection C1B 7 10 DEMout
13 PC2OUT Phase Comparator 2 Output
GND 8 9 VCOin
14 SIGIN Signal Input
15 PC3OUT Phase Comparator 3 Output
16 VCC Positive Supply Voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Value Unit This device contains protection
circuitry to guard against damage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 1.5 to VCC + 1.5 V fields. However, precautions must
be taken to avoid applications of any

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated
± 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin mA voltages to this high−impedance cir-
cuit. For proper operation, Vin and
± 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin mA
Vout should be constrained to the
± 50 range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins mA
Unused inputs must always be

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage
SOIC Package† 500 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Tstg

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL ÎÎÎ
Storage Temperature

ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
– 65 to + 150 C
C
Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Plastic DIP and SOIC Package† 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND) NON−VCO
3.0
2.0
6.0
6.0
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
Operating Temperature, All Package Types
0
– 55
VCC
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Input Rise and Fall Time

ÎÎÎ
ÎÎ
(Pin 5)
VCC = 2.0 V
VCC = 4.5 V
0
0
1000
500
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC = 6.0 V 0 400

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[Phase Comparator Section]


DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit

VCC – 55 to
Symbol Parameter Test Conditions Volts 25C ≤ 85°C ≤ 125°C Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC − 0.1 V 2.0 1.5 1.5 1.5 V
Voltage DC Coupled |Iout| ≤ 20 µA 4.5 3.15 3.15 3.15
SIGIN, COMPIN 6.0 4.2 4.2 4.2
VIL Maximum Low−Level Input Vout = 0.1 V or VCC − 0.1 V 2.0 0.5 0.5 0.5 V
Voltage DC Coupled |Iout| ≤ 20 µA 4.5 1.35 1.35 1.35
SIGIN, COMPIN 6.0 1.8 1.8 1.8
VOH Minimum High−Level Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Output Voltage |Iout| ≤ 20 µA 4.5 4.4 4.4 4.4
PCPOUT, PCnOUT 6.0 5.9 5.9 5.9
Vin = VIH or VIL
|Iout| ≤ 4.0 mA 4.5 3.98 3.84 3.7
|Iout| ≤ 5.2 mA 6.0 5.48 5.34 5.2
(continued)

[Phase Comparator Section]


DC ELECTRICAL CHARACTERISTICS − continued (Voltages Referenced to GND)
Guaranteed Limit

VCC – 55 to
Symbol Parameter Test Conditions Volts 25C ≤ 85°C ≤ 125°C Unit
VOL Maximum Low−Level Vout = 0.1 V or VCC − 0.1 V 2.0 0.1 0.1 0.1 V
Output Voltage Qa−Qh |Iout| ≤ 20 µA 4.5 0.1 0.1 0.1
PCPOUT, PCnOUT 6.0 0.1 0.1 0.1
Vin = VIH or VIL
|Iout| ≤ 4.0 mA 4.5 0.26 0.33 0.4
|Iout| ≤ 5.2 mA 6.0 0.26 0.33 0.4
Iin Maximum Input Leakage Cur- Vin = VCC or GND 2.0 ± 3.0 ± 4.0 ± 5.0 µA
rent 3.0 ± 7.0 ± 9.0 ± 11.0
SIGIN, COMPIN 4.5 ± 18.0 ± 23.0 ± 27.0
6.0 ± 30.0 ± 38.0 ± 45.0

IOZ Maximum Three−State Output in High−Impedance State 6.0 ± 0.5 ± 5.0 ± 10 µA


Leakage Current Vin = VIH or VIL
PC2OUT Vout = VCC or GND
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4.0 40 160 µA
Current (per Package) |Iout| = 0 µA
(VCO disabled)
Pins 3, 5 and 14 at VCC
Pin 9 at GND; Input Leakage
at
Pins 3 and 14 to be excluded
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
[Phase Comparator Section]
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
VCC
Symbol Parameter Volts – 55 to 25C ≤ 85°C ≤ 125°C Unit
tPLH, Maximum Propagation Delay, SIGIN/COMPIN to PC1OUT 2.0 175 220 265 ns
tPHL (Figure 1) 4.5 35 44 53
6.0 30 37 45
tPLH, Maximum Propagation Delay, SIGIN/COMPIN to PCPOUT 2.0 340 425 510 ns
tPHL (Figure 1) 4.5 68 85 102
6.0 58 72 87

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MC74HC4046A

[Phase Comparator Section]


AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
tPLH, Maximum Propagation Delay, SIGIN/COMPIN to PC3OUT 2.0 270 340 405 ns
tPHL (Figure 1) 4.5 54 68 81
6.0 46 58 69
tPLZ, Maximum Propagation Delay, SIGIN/COMPIN Output 2.0 200 250 300 ns
tPHZ Disable Time to PC2OUT (Figures 2 and 3) 4.5 40 50 60
6.0 34 43 51
tPZH, Maximum Propagation Delay, SIGIN/COMPIN Output 2.0 230 290 345 ns
tPZL Enable Time to PC2OUT (Figures 2 and 3) 4.5 46 58 69
6.0 39 49 59
tTLH, Maximum Output Transition Time 2.0 75 95 110 ns
tTHL (Figure 1) 4.5 15 19 22
6.0 13 16 19
[VCO Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit

VCC – 55 to
Symbol Parameter Test Conditions Volts 25C ≤ 85°C ≤ 125°C Unit
VIH Minimum High−Level Vout = 0.1 V or VCC − 0.1 V 3.0 2.1 2.1 2.1 V
Input Voltage |Iout| ≤ 20 µA 4.5 3.15 3.15 3.15
INH 6.0 4.2 4.2 4.2
VIL Maximum Low−Level Vout = 0.1 V or VCC − 0.1 V 3.0 0.90 0.9 0.9 V
Input Voltage |Iout| ≤ 20 µA 4.5 1.35 1.35 1.35
INH 6.0 1.8 1.8 1.8
VOH Minimum High−Level Vin = VIH or VIL 3.0 1.9 1.9 1.9 V
Output Voltage |Iout| ≤ 20 µA 4.5 4.4 4.4 4.4
VCOOUT 6.0 5.9 5.9 5.9
Vin = VIH or VIL
|Iout| ≤ 4.0 mA 4.5 3.98 3.84 3.7
|Iout| ≤ 5.2 mA 6.0 5.48 5.34 5.2
VOL Maximum Low−Level Vout = 0.1 V or VCC − 0.1 V 3.0 0.1 0.1 0.1 V
Output Voltage |Iout| ≤ 20 µA 4.5 0.1 0.1 0.1
VCOOUT 6.0 0.1 0.1 0.1
Vin = VIH or VIL
|Iout| ≤ 4.0 mA 4.5 0.26 0.33 0.4
|Iout| ≤ 5.2 mA 6.0 0.26 0.33 0.4
Iin Maximum Input Vin = VCC or GND 6.0 0.1 1.0 1.0 µA
Leakage Current
INH, VCOIN
Min Max Min Max Min Max

VVCOIN Operating Voltage Range at INH = VIL 3.0 0.1 1.0 0.1 1.0 0.1 1.0 V
VCOIN over the range 4.5 0.1 2.5 0.1 2.5 0.1 2.5
specified for R1; For 6.0 0.1 4.0 0.1 4.0 0.1 4.0
linearity see Fig. 15A,
Parallel value of R1 and R2
should be > 2.7 kΩ
R1 Resistor Range 3.0 3.0 300 3.0 300 3.0 300 kΩ
4.5 3.0 300 3.0 300 3.0 300
6.0 3.0 300 3.0 300 3.0 300
R2 3.0 3.0 300 3.0 300 3.0 300
4.5 3.0 300 3.0 300 3.0 300
6.0 3.0 300 3.0 300 3.0 300
C1 Capacitor Range 3.0 40 No pF
4.5 40 Limit
6.0 40

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MC74HC4046A

[VCO Section]
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit

– 55 to 25C ≤ 85°C ≤ 125°C


VCC
Symbol Parameter Volts Min Max Min Max Min Max Unit
∆f/T Frequency Stability with 3.0 %/K
Temperature Changes 4.5
(Figure 13A, B, C) 6.0
fo VCO Center Frequency 3.0 3 MHz
(Duty Factor = 50%) 4.5 11
(Figure 14A, B, C, D) 6.0 13
∆fVCO VCO Frequency Linearity 3.0 See Figures 15A, B, C %
4.5
6.0
∂ VCO Duty Factor at VCOOUT 3.0 Typical 50% %
4.5
6.0

[Demodulator Section]
DC ELECTRICAL CHARACTERISTICS
Guaranteed Limit

– 55 to 25C ≤ 85°C ≤ 125°C


VCC
Symbol Parameter Test Conditions Volts Min Max Min Max Min Max Unit
RS Resistor Range At RS > 300 kΩ the 3.0 50 300 kΩ
Leakage Current can 4.5 50 300
Influence VDEMOUT 6.0 50 300
VOFF Offset Voltage Vi = VVCOIN = 1/2 VCC; 3.0 See Figure 12 mV
VCOIN to VDEMOUT Values taken over RS 4.5
Range. 6.0
RD Dynamic Output VDEMOUT = 1/2 VCC 3.0 Typical 25 Ω Ω
Resistance at DEMOUT 4.5
6.0

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MC74HC4046A

SWITCHING WAVEFORMS

VCC
VCC SIGIN
SIGIN, COMPIN INPUT 50%
INPUTS 50% GND
GND VCC
tPHL tPLH COMPIN
50%
INPUT
90% GND
PCPOUT, PC1OUT tPHZ
50% tPZH
PC3OUT VOH
OUTPUTS PC2OUT 90%
10% 50%
OUTPUT HIGH
tTHL tTLH IMPEDANCE

Figure 1. Figure 2.

VCC
SIGIN
INPUT 50% TEST POINT
GND
OUTPUT
VCC DEVICE
COMPIN UNDER
50% TEST CL*
INPUT
GND
tPLZ
tPZL
HIGH
IMPEDANCE
PC2OUT 50%
*INCLUDES ALL PROBE AND JIG CAPACITANCE
OUTPUT 10% VOL

Figure 3. Figure 4. Test Circuit

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MC74HC4046A

DETAILED CIRCUIT DESCRIPTION up to Vref of the comparators, the oscillator logic flips the
capacitor which causes the mirror to charge the opposite side
Voltage Controlled Oscillator/Demodulator Output of the capacitor. The output from the internal logic is then
The VCO requires two or three external components to taken to VCO output (Pin 4).
operate. These are R1, R2, C1. Resistor R1 and Capacitor C1 The input to the VCO is a very high impedance CMOS
are selected to determine the center frequency of the VCO input and thus will not load down the loop filter, easing the
(see typical performance curves Figure 14). R2 can be used filters design. In order to make signals at the VCO input
to set the offset frequency with 0 volts at VCO input. For accessible without degrading the loop performance, the
example, if R2 is decreased, the offset frequency is VCO input voltage is buffered through a unity gain Op−amp
increased. If R2 is omitted the VCO range is from 0 Hz. The to Demod Output. This Op−amp can drive loads of 50K
effect of R2 is shown in Figure 24, typical performance ohms or more and provides no loading effects to the VCO
curves. By increasing the value of R2 the lock range of the input voltage (see Figure 12).
PLL is increased and the gain (volts/Hz) is decreased. Thus, An inhibit input is provided to allow disabling of the VCO
for a narrow lock range, large swings on the VCO input will and all Op−amps (see Figure 5). This is useful if the internal
cause less frequency variation. VCO is not being used. A logic high on inhibit disables the
Internally, the resistors set a current in a current mirror, as VCO and all Op−amps, minimizing standby power
shown in Figure 5. The mirrored current drives one side of consumption.
the capacitor. Once the voltage across the capacitor charges

VREF
+ I1
_
12

R2 CURRENT
MIRROR
I1 + I2 = I3

I2 4 VCOOUT
VCOIN 9 +
_
11

R1 I3

DEMODOUT 10 +
_

C1
(EXTERNAL)
6 7

Vref

+ +

INH 5

Figure 5. Logic Diagram for VCO

The output of the VCO is a standard high speed CMOS feed external prescalers (counters) to enable frequency
output with an equivalent LS−TTL fan out of 10. The VCO synthesis.
output is approximately a square wave. This output can
either directly feed the COMPIN of the phase comparators or

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MC74HC4046A

Phase Comparators outputs of these comparators are essentially standard 74HC


All three phase comparators have two inputs, SIGIN and outputs (comparator 2 is TRI−STATEABLE). In normal
COMPIN. The SIGIN and COMPIN have a special DC bias operation VCC and ground voltage levels are fed to the loop
network that enables AC coupling of input signals. If the filter. This differs from some phase detectors which supply
signals are not AC coupled, standard 74HC input levels are a current to the loop filter and should be considered in the
required. Both input structures are shown in Figure 6. The design. (The MC14046 also provides a voltage).

VCC
VCC

SIGIN
14 PC2OUT
13

VCC

COMPIN
3 PCPOUT
1

PC3OUT
15

PC1OUT
2

Figure 6. Logic Diagram for Phase Comparators

Phase Comparator 1 two input signals must be in phase. When the input
This comparator is a simple XOR gate similar to the frequency is fmax, the VCO input must be VCC and the phase
74HC86. Its operation is similar to an overdriven balanced detector inputs must be 180 degrees out of phase.
modulator. To maximize lock range the input frequencies
must have a 50% duty cycle. Typical input and output
waveforms are shown in Figure 7. The output of the phase SIGIN
detector feeds the loop filter which averages the output
COMPIN
voltage. The frequency range upon which the PLL will lock
onto if initially out of lock is defined as the capture range. PC1OUT
The capture range for phase detector 1 is dependent on the VCC
VCOIN
loop filter design. The capture range can be as large as the GND
lock range, which is equal to the VCO frequency range.
To see how the detector operates, refer to Figure 7. When
Figure 7. Typical Waveforms for PLL Using
two square wave signals are applied to this comparator, an
Phase Comparator 1
output waveform (whose duty cycle is dependent on the
phase difference between the two signals) results. As the The XOR is more susceptible to locking onto harmonics
phase difference increases, the output duty cycle increases of the SIGIN than the digital phase detector 2. For instance,
and the voltage after the loop filter increases. In order to a signal 2 times the VCO frequency results in the same
achieve lock when the PLL input frequency increases, the output duty cycle as a signal equal to the VCO frequency.
VCO input voltage must increase and the phase difference The difference is that the output frequency of the 2f example
between COMPIN and SIGIN will increase. At an input is twice that of the other example. The loop filter and VCO
frequency equal to fmin, the VCO input is at 0 V. This range should be designed to prevent locking on to
requires the phase detector output to be grounded; hence, the harmonics.

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Phase Comparator 2 and will cause the output to go high until the VCO leading
This detector is a digital memory network. It consists of edge is seen, potentially for an entire SIGIN period. This
four flip−flops and some gating logic, a three state output would cause the VCO to speed up during that time. When
and a phase pulse output as shown in Figure 6. This using PC1, the output of that phase detector would be
comparator acts only on the positive edges of the input disturbed for only the short duration of the noise spike and
signals and is independent of duty cycle. would cause less upset.
Phase comparator 2 operates in such a way as to force the
PLL into lock with 0 phase difference between the VCO Phase Comparator 3
output and the signal input positive waveform edges. Figure This is a positive edge−triggered sequential phase
8 shows some typical loop waveforms. First assume that detector using an RS flip−flop as shown in Figure 6. When
SIGIN is leading the COMPIN. This means that the VCO’s the PLL is using this comparator, the loop is controlled by
frequency must be increased to bring its leading edge into positive signal transitions and the duty factors of SIGIN and
proper phase alignment. Thus the phase detector 2 output is COMP IN
set high. This will cause the loop filter to charge up the VCO are not important. It has some similar characteristics to the
input, increasing the VCO frequency. Once the leading edge edge sensitive comparator. To see how this detector works,
of the COMPIN is detected, the output goes TRI−STATE assume input pulses are applied to the SIG IN and
holding the VCO input at the loop filter voltage. If the VCO COMP IN ’s as shown in Figure 9. When the SIGIN leads the
still lags the SIGIN then the phase detector will again charge COMPIN, the flop is set. This will charge the loop filter and
up the VCO input for the time between the leading edges of cause the VCO to speed up, bringing the comparator into
both waveforms. phase with the SIG IN. The phase angle between SIGIN and
If the VCO leads the SIGIN then when the leading edge of COMP IN varies from 0° to 360° and is 180° at fo. The
the VCO is seen; the output of the phase comparator goes voltage swing for PC3 is greater than for PC2 but
low. This discharges the loop filter until the leading edge of consequently has more ripple in the signal to the VCO.
the SIGIN is detected at which time the output disables itself When no SIG IN is present the VCO will be forced to fmax as
again. This has the effect of slowing down the VCO to again opposed to fmin when PC2 is used.
make the rising edges of both waveforms coincidental. The operating characteristics of all three phase
When the PLL is out of lock, the VCO will be running comparators should be compared to the requirements of the
either slower or faster than the SIGIN. If it is running slower system design and the appropriate one should be used.
the phase detector will see more SIGIN rising edges and so
the output of the phase comparator will be high a majority SIGIN
of the time, raising the VCO’s frequency. Conversely, if the
VCO is running faster than the SIGIN, the output of the COMPIN
VCC
PC2OUT
detector will be low most of the time and the VCO’s output
GND
frequency will be decreased. HIGH IMPEDANCE OFF−STATE
As one can see, when the PLL is locked, the output of VCOIN
phase comparator 2 will be disabled except for minor PCPOUT
corrections at the leading edge of the waveforms. When PC2
is TRI−STATED, the PCP output is high. This output can be
Figure 8. Typical Waveforms for PLL Using
used to determine when the PLL is in the locked condition. Phase Comparator 2
This detector has several interesting characteristics. Over
the entire VCO frequency range there is no phase difference
between the COMPIN and the SIGIN. The lock range of the SIGIN
PLL is the same as the capture range. Minimal power was COMPIN
consumed in the loop filter since in lock the detector output
is a high impedance. When no SIGIN is present, the detector PC3OUT
VCC
VCOIN
will see only VCO leading edges, so the comparator output
GND
will stay low, forcing the VCO to fmin.
Phase comparator 2 is more susceptible to noise, causing
the PLL to unlock. If a noise pulse is seen on the SIGIN, the Figure 9. Typical Waveform for PLL Using
comparator treats it as another positive edge of the SIGIN Phase Comparator 3

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800 VCC=6.0 V
VCC=3.0 V
4.0
VCC=4.5 V

VCC=3.0 V
R I = (k Ω )

I I ( µ A)
400
VCC=4.5 V 0

VCC=6.0 V

0
1/2 VCC−1.0 V 1/2 VCC 1/2 VCC+1.0 V −4.0
1/2VCC − 500 mV 1/2 VCC 1/2 VCC + 500 mV
VI (V)
VI (V)

Figure 10. Input Resistance at SIGIN, COMPIN with Figure 11. Input Current at SIGIN, COMPIN with
∆VI = 1.0 V at Self−Bias Point ∆VI = 500 mV at Self−Bias Point

DEMOD OUT
15
6.0
R1=3.0kΩ
10
FREQUENCY STABILITY (%)
R1=100kΩ
5.0 R1=300kΩ
VCC=6.0 V RS=300k
OUT

VCC=6.0 V RS=50k 0 R1=100kΩ


VDEM

VCC=4.5 V RS=300k R1=300kΩ


−5.0
VCC=4.5 V RS=50k

−10 VCC = 3.0 V


VCC=3.0 V RS=300k
R1=3.0kΩ C1=100pF; R2=∞; VVCOIN=1/3VCC
VCC=3.0 V RS=50k
−15
−100 −50 0 50 100 150
0
0 3.0 6.0 AMBIENT TEMPERATURE (°C)
VCOIN (V)
Figure 12. Offset Voltage at Demodulator Output as Figure 13A. Frequency Stability versus Ambient
a Function of VCOIN and RS Temperature: VCC = 3.0 V

15 R1=3.0kΩ
10
R1=3.0kΩ
R1=300kΩ 8.0 R1=300kΩ
FREQUENCY STABILITY (%)

10
FREQUENCY STABILITY (%)

R1=100kΩ 6.0 R1=100kΩ


5.0 4.0
2.0
0 0
−2.0
−5.0
−4.0
−6.0
−10 VCC=4.5 V VCC=6.0 V
C1=100pF; R2=∞; VVCOIN=1/2VCC −8.0 C1=100pF; R2=∞; VVCOIN=1/2VCC
−15 −10
−100 −50 0 50 100 150 −100 −50 0 50 100 150
AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C)

Figure 13B. Frequency Stability versus Ambient Figure 13C. Frequency Stability versus Ambient
Temperature: VCC = 4.5 V Temperature: VCC = 6.0 V

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MC74HC4046A

23 70
VCC = 4.5 V VCC = 6.0 V
21 VCC = 6.0 V 60
19
50 VCC = 3.0 V
f VCO(MHz)

17 VCC = 4.5 V

f VCO (KHz)
40
15
30
13
VCC = 3.0 V 20
11
R1 = 3.0 kΩ R1 = 3.0 kΩ
9 10
C1 = 39 pF C1 = 0.1 µF
7.0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VVCOIN (V) VVCOIN (V)

Figure 14A. VCO Frequency (fVCO) as a Function Figure 14B. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN) of the VCO Input Voltage (VVCOIN)

2.0 1.0
VCC = 6.0 V
VCC = 4.5 V 0.9
0.8 VCC = 4.5 V
VCC = 6.0 V
VCC = 3.0 V 0.7
VCC = 3.0 V
f VCO (KHz)
f VCO(MHz)

0.6
1.0 0.5
0.4
0.3

R1 = 300 kΩ 0.2
R1 = 300 kΩ
C1 = 39 pF 0.1 C1 = 0.1 µF
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VVCOIN (V) VVCOIN (V)

Figure 14C. VCO Frequency (fVCO) as a Function Figure 14D. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN) of the VCO Input Voltage (VVCOIN)

2.0
VCC=
C1 = 1.0 µF
4.5 V
1.0 f2
6.0 V
f0
∆ f VCO (%)

3.0 V f0′
0
4.5 V f1

6.0 V
−1.0

R2 = ∞; ∆V = 0.5 V
3.0 V C1 = 39 pF
−2.0
MIN 1/2 VCC MAX
100 101 102 103
R1 (kΩ) ∆V = 0.5 V OVER THE VCC RANGE:
FOR VCO LINEARITY
f0′ = (f1 + f2) / 2
LINEARITY = (f0′ − f0) / f0′) x 100%

Figure 15A. Frequency Linearity versus Figure 15B. Definition of VCO Frequency Linearity
R1, C1 and VCC

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MC74HC4046A

106 CL=50pF; R2=∞; VVCOIN=1/2 VCC FOR VCC=4.5V AND 6.0V;


106 CL=50pF; R1=∞; VVCOIN=0V; Tamb=25°C
VVCOIN=1/3 VCC FOR VCC=3.0V; Tamb=25°C

105 105
PR1 ( µW)

PR2 ( µW)
VCC=6.0V, C1=40pF

VCC=6.0V, C1=1.0 µF VCC=6.0V, C1=40pF

VCC=6.0V, C1=1.0 µF
104 VCC=4.5V, C1=40pF 104
VCC=4.5V, C1=1.0 µF
VCC=4.5V, C1=40pF
VCC=3.0V, C1=40pF VCC=4.5V, C1=1.0 µF

VCC=3.0V, C1=1.0 µF VCC=3.0V, C1=1.0 µF


VCC=3.0V, C1=40pF
103 103
100 101 102 103 100 101 102 103
R1 (kΩ) R2 (kΩ)

Figure 16. Power Dissipation versus R1 Figure 17. Power Dissipation versus R2

108 VCC= INH=GND; Tamb=25°C; R2=∞; VVCOIN=1/3 VCC


103 6.0 V
R1=R2=∞; Tamb=25°C
4.5 V
107 3.0 V
6.0 V
4.5 V
106 3.0 V
PDEM ( µ W)

102 6.0 V
(Hz)

4.5 V
3.0 V
105
VCO

VCC=6.0 V
R1=3.0kΩ
f

VCC=4.5 V
101 104

VCC=3.0 V R1=100kΩ
103
R1=300kΩ
100 102
101 102 103 101 102 103 104 105 106
RS (kΩ) C1 (pF)

Figure 18. DC Power Dissipation of Figure 19. VCO Center Frequency versus C1
Demodulator versus RS

108 VCC=
108
R1=∞; VVCOIN=1/2 VCC FOR VCC=4.5V AND 6.0V;
6.0 V VVCOIN=1/3 VCC FOR VCC=3.0V; INH=GND; Tamb=25°C
107 4.5 V VCC=4.5V; R2=∞
3.0 V 107
6.0 V
106 4.5 V
3.0 V
106
2 fL (Hz)
off (Hz)

6.0 V
105 4.5 V
3.0 V
105
f

104 R2=3.0kΩ

103 104
R2=100kΩ

102 R2=300kΩ 103

101 102
101 102 103 104 105 106 10−7 10−6 10−5 10−4 10−3 10−2 10−1
C1 (pF) R1C1
Figure 20. Frequency Offset versus C1 Figure 21. Typical Frequency Lock Range (2fL)
versus R1C1

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MC74HC4046A

20 14
R1=3.0kΩ
C1=39pF
R1=10kΩ 12
15
10
R1=20kΩ
FREQ. (MHz)

FREQ. (MHz)
R1=30kΩ
8.0
10 6.0
R1=3kΩ
R1=40kΩ
R1=10kΩ
R1=20kΩ
R1=50kΩ
4.0 R1=30kΩ
R1=40kΩ
5.0 2.0 R1=50kΩ
R1=100kΩ
R1=100kΩ
0 R1=300kΩ
C1=39pF R1=300kΩ
0 −2.0
1.0 101 102 103 104 105 100 101 102 103 104 105 106
R2 (kΩ) R2 (kΩ)
Figure 22. R2 versus fmax Figure 23. R2 versus fmin

20
C1=39pF

R1=10kΩ
2f L (MHz)

R1=3.0kΩ
R1=20kΩ

10 R1=30kΩ

R1=40kΩ
R1=50kΩ

R1=100kΩ

R1=300kΩ

0
1.0 101 102 103 104 105
R2 (kΩ)

Figure 24. R2 versus Frequency Lock Range (2fL)

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MC74HC4046A

APPLICATION INFORMATION
The following information is a guide for approximate values of R1, R2, and C1. Figures 19, 20, and 21 should be used as
references as indicated below, also the values of R1, R2, and C1 should not violate the Maximum values indicated in the DC
ELECTRICAL CHARACTERISTICS tables.

Phase Comparator 1 Phase Comparator 2 Phase Comparator 3


R2 = ∞ R2  R2 = ∞ R2  R2 = ∞ R2 
• Given f0 • Given f0 and fL • Given fmax and f0 • Given f0 and fL • Given fmax and f0 • Given f0 and fL
• Use f0 with • Calculate fmin • Determine the • Calculate fmin • Determine the • Calculate fmin:
Figure 19 to fmin = f0−fL value of R1 and fmin = f0−fL value of R1 and fmin = f0−fL
determine R1 and • Determine values C1 using Figure • Determine values C1 using Figure • Determine values
C1. of C1 and R2 from 19 and use Figure of C1 and R2 from 19 and Figure 21 of C1 and R2 from
(see Figure 23 for Figure 20. 21 to obtain 2fL Figure 20. to obtain 2fL and Figure 20.
characteristics of and then use this then use this to
• Determine R1−C1 to calculate fmin. • Determine R1−C1 calculate fmin. • Determine R1−C1
the VCO operation) from Figure 21. from Figure 21. from Figure 21.
• Calculate value of • Calculate value of • Calculate value of
R1 from the value R1 from the value R1 from the value
of C1 and the of C1 and the of C1 and the
product of R1C1 product of R1C1 product of R1C1
from Figure 21. from Figure 21. from Figure 21.
(see Figure 24 for (see Figure 24 for (see Figure 24 for
characteristics of characteristics of characteristics of
the VCO operation) the VCO operation) the VCO operation)

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MC74HC4051A,
MC74HC4052A,
MC74HC4053A

Analog Multiplexers /
Demultiplexers
High−Performance Silicon−Gate CMOS http://onsemi.com

MARKING
The MC74HC4051A, MC74HC4052A and MC74HC4053A utilize DIAGRAMS
silicon−gate CMOS technology to achieve fast propagation delays,
16
low ON resistances, and low OFF leakage currents. These analog
PDIP−16
multiplexers/demultiplexers control analog voltages that may vary N SUFFIX MC74HC405xAN
across the complete power supply range (from VCC to VEE). 16 AWLYYWW
CASE 648
The HC4051A, HC4052A and HC4053A are identical in pinout to 1
1
the metal−gate MC14051AB, MC14052AB and MC14053AB. The 16
Channel−Select inputs determine which one of the Analog SO−16
Inputs/Outputs is to be connected, by means of an analog switch, to the HC405xA
D SUFFIX
16 AWLYYWW
Common Output/Input. When the Enable pin is HIGH, all analog CASE 751B
1
switches are turned off. 1
The Channel−Select and Enable inputs are compatible with standard 16
CMOS outputs; with pullup resistors they are compatible with LSTTL SO−16 WIDE
outputs. HC405xA
16 DW SUFFIX
AWLYWW
These devices have been designed so that the ON resistance (Ron) is CASE 751G
more linear over input voltage than Ron of metal−gate CMOS analog 1 1
switches. 16
For a multiplexer/demultiplexer with injection current protection,
see HC4851A and HC4852A. TSSOP−16 HC40
5xA
• Fast Switching and Propagation Speeds 16 DT SUFFIX
CASE 948F ALYW
• Low Crosstalk Between Switches 1
1
• Diode Protection on All Inputs/Outputs 16
• Analog Power Supply Range (VCC − VEE) = 2.0 to 12.0 V SOEIAJ−16
• Digital (Control) Power Supply Range (VCC − GND) = 2.0 to 6.0 V 16
F SUFFIX 74HC405xA
ALYW
• Improved Linearity and Lower ON Resistance Than Metal−Gate 1
CASE 966

Counterparts 1
• Low Noise A = Assembly Loca-
• In Compliance With the Requirements of JEDEC Standard No. 7A tion
WL = Wafer Lot
• Chip Complexity: HC4051A — 184 FETs or 46 Equivalent Gates YY = Year
HC4052A — 168 FETs or 42 Equivalent Gates WW = Work Week
HC4053A — 156 FETs or 39 Equivalent Gates
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 225 of this data sheet.

 Semiconductor Components Industries, LLC, 2001 213 Publication Order Number:


May, 2001 − Rev. 2 MC74HC4051A/D
MC74HC4051A, MC74HC4052A, MC74HC4053A

FUNCTION TABLE − MC74HC4051A


LOGIC DIAGRAM Control Inputs
MC74HC4051A
Select
Single−Pole, 8−Position Plus Common Off Enable C B A ON Channels

13
L L L L X0
X0 L L L H X1
14
X1 L L H L X2
15 3 COMMON L L H H X3
X2 X
ANALOG 12 OUTPUT/ L H L L X4
INPUTS/ X3 MULTIPLEXER/ INPUT L H L H X5
OUTPUTS X4 1 DEMULTIPLEXER
L H H L X6
5
X5 L H H H X7
2 H X X X NONE
X6
4
X7 X = Don’t Care
11
A
CHANNEL 10
SELECT B Pinout: MC74HC4051A (Top View)
INPUTS 9
C VCC X2 X1 X0 X3 A B C
6
ENABLE 16 15 14 13 12 11 10 9
PIN 16 = VCC
PIN 7 = VEE
PIN 8 = GND

1 2 3 4 5 6 7 8
X4 X6 X X7 X5 Enable VEE GND

FUNCTION TABLE − MC74HC4052A


LOGIC DIAGRAM Control Inputs
MC74HC4052A
Double−Pole, 4−Position Plus Common Off Select
Enable B A ON Channels
12
X0 L L L Y0 X0
14
X1 13 L L H Y1 X1
15 X SWITCH X
X2 L H L Y2 X2
11 L H H Y3 X3
X3
ANALOG COMMON H X X NONE
INPUTS/OUTPUTS 1 OUTPUTS/INPUTS
Y0 X = Don’t Care
5 3
Y1 Y SWITCH Y
2
Y2
4
Y3 Pinout: MC74HC4052A (Top View)
10
CHANNEL-SELECT A VCC X2 X1 X X0 X3 A B
9 PIN 16 = VCC
INPUTS B
PIN 7 = VEE 16 15 14 13 12 11 10 9
PIN 8 = GND
6
ENABLE

1 2 3 4 5 6 7 8
Y0 Y2 Y Y3 Y1 Enable VEE GND

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MC74HC4051A, MC74HC4052A, MC74HC4053A

FUNCTION TABLE − MC74HC4053A


Control Inputs
LOGIC DIAGRAM
MC74HC4053A Select
Triple Single−Pole, Double−Position Plus Common Off Enable C B A ON Channels
L L L L Z0 Y0 X0
12 L L L H Z0 Y0 X1
X0 14
13 X SWITCH X L L H L Z0 Y1 X0
X1 L L H H Z0 Y1 X1
L H L L Z1 Y0 X0
2 L H L H Z1 Y0 X1
Y0 15 COMMON
ANALOG 1 Y SWITCH Y L H H L Z1 Y1 X0
INPUTS/OUTPUTS Y1 OUTPUTS/INPUTS
L H H H Z1 Y1 X1
H X X X NONE
5
Z0 4
3 Z SWITCH Z X = Don’t Care
Z1
11
A
CHANNEL-SELECT 10 PIN 16 = VCC
INPUTS B
9 PIN 7 = VEE Pinout: MC74HC4053A (Top View)
C PIN 8 = GND
6 VCC Y X X1 X0 A B C
ENABLE
16 15 14 13 12 11 10 9
NOTE: This device allows independent control of each switch.
Channel−Select Input A controls the X−Switch, Input B controls
the Y−Switch and Input C controls the Z−Switch

1 2 3 4 5 6 7 8
Y1 Y0 Z1 Z Z0 Enable VEE GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Value Unit This device contains protection
circuitry to guard against damage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC Positive DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
(Referenced to VEE) – 0.5 to + 14.0 due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
fields. However, precautions must
VEE Negative DC Supply Voltage (Referenced to GND) – 7.0 to + 5.0 V be taken to avoid applications of any

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
voltage higher than maximum rated
VIS Analog Input Voltage VEE − 0.5 to V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
voltages to this high−impedance cir-
VCC + 0.5
cuit. For proper operation, Vin and

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin Digital Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout should be constrained to the
range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
I DC Current, Into or Out of Any Pin ± 25 mA Unused inputs must always be

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage
level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
EIAJ/SOIC Package† 500
TSSOP Package† 450 Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Tstg

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL ÎÎÎ
Storage Temperature Range

ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
– 65 to + 150 C
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
EIAJ/SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC4051A, MC74HC4052A, MC74HC4053A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ
Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC Positive DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Referenced to VEE) 2.0 12.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VEE Negative DC Supply Voltage, Output (Referenced to − 6.0 GND V
GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIS
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin
ÎÎÎÎÎ
ÎÎÎ
Analog Input Voltage

ÎÎ
ÎÎÎ
Digital Input Voltage (Referenced to GND)
VEE
GND
VCC
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIO*

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
Static or Dynamic Voltage Across Switch

ÎÎ
ÎÎÎ
Operating Temperature Range, All Package Types – 55
1.2
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Input Rise/Fall Time

ÎÎÎ
ÎÎ
(Channel Select or Enable Inputs)
VCC = 2.0 V
VCC = 3.0 V
0
0
1000
600
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400
*For voltage drops across switch greater than 1.2V (switch on), excessive VCC current may be
drawn; i.e., the current out of the switch may contain both VCC and switch input components.
The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.

DC CHARACTERISTICS — Digital Section (Voltages Referenced to GND) VEE = GND, Except Where Noted
Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Ron = Per Spec 2.0 1.50 1.50 1.50 V
Voltage, Channel−Select or 3.0 2.10 2.10 2.10
Enable Inputs 4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Ron = Per Spec 2.0 0.5 0.5 0.5 V
Voltage, Channel−Select or 3.0 0.9 0.9 0.9
Enable Inputs 4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
Iin Maximum Input Leakage Current, Vin = VCC or GND, 6.0 ± 0.1 ± 1.0 ± 1.0 µA
Channel−Select or Enable Inputs VEE = − 6.0 V
ICC Maximum Quiescent Supply Channel Select, Enable and µA
Current (per Package) VIS = VCC or GND; VEE = GND 6.0 1 10 20
VIO = 0 V VEE = − 6.0 6.0 4 40 80
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC4051A, MC74HC4052A, MC74HC4053A

DC CHARACTERISTICS — Analog Section


Guaranteed Limit

Symbol Parameter Condition VCC VEE −55 to 25°C ≤85°C ≤125°C Unit
Ron Maximum “ON” Resistance Vin = VIL or VIH; VIS = VCC to 4.5 0.0 190 240 280 Ω
VEE; IS ≤ 2.0 mA 4.5 − 4.5 120 150 170
(Figures 1, 2) 6.0 − 6.0 100 125 140
Vin = VIL or VIH; VIS = VCC or 4.5 0.0 150 190 230
VEE (Endpoints); IS ≤ 2.0 mA 4.5 − 4.5 100 125 140
(Figures 1, 2) 6.0 − 6.0 80 100 115
∆Ron Maximum Difference in “ON” Vin = VIL or VIH; 4.5 0.0 30 35 40 Ω
Resistance Between Any Two VIS = 1/2 (VCC − VEE); 4.5 − 4.5 12 15 18
Channels in the Same Package IS ≤ 2.0 mA 6.0 − 6.0 10 12 14
Ioff Maximum Off−Channel Leakage Vin = VIL or VIH; µA
Current, Any One Channel VIO = VCC − VEE; 6.0 − 6.0 0.1 0.5 1.0
Switch Off (Figure 3)
Maximum Off−Channel HC4051A Vin = VIL or VIH; 6.0 − 6.0 0.2 2.0 4.0
Leakage Current, HC4052A VIO = VCC − VEE; 6.0 − 6.0 0.1 1.0 2.0
Common Channel HC4053A Switch Off (Figure 4) 6.0 − 6.0 0.1 1.0 2.0
Ion Maximum On−Channel HC4051A Vin = VIL or VIH; 6.0 − 6.0 0.2 2.0 4.0 µA
Leakage Current, HC4052A Switch−to−Switch = 6.0 − 6.0 0.1 1.0 2.0
Channel−to−Channel HC4053A VCC − VEE; (Figure 5) 6.0 − 6.0 0.1 1.0 2.0

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Channel−Select to Analog Output 2.0 270 320 350 ns
tPHL (Figure 9) 3.0 90 110 125
4.5 59 79 85
6.0 45 65 75
tPLH, Maximum Propagation Delay, Analog Input to Analog Output 2.0 40 60 70 ns
tPHL (Figure 10) 3.0 25 30 32
4.5 12 15 18
6.0 10 13 15
tPLZ, Maximum Propagation Delay, Enable to Analog Output 2.0 160 200 220 ns
tPHZ (Figure 11) 3.0 70 95 110
4.5 48 63 76
6.0 39 55 63
tPZL, Maximum Propagation Delay, Enable to Analog Output 2.0 245 315 345 ns
tPZH (Figure 11) 3.0 115 145 155
4.5 49 69 83
6.0 39 58 67
Cin Maximum Input Capacitance, Channel−Select or Enable Inputs 10 10 10 pF
CI/O Maximum Capacitance Analog I/O 35 35 35 pF
(All Switches Off) Common O/I: HC4051A 130 130 130
HC4052A 80 80 80
HC4053A 50 50 50
Feedthrough 1.0 1.0 1.0
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D)
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

CPD Power Dissipation Capacitance (Figure 13)* HC4051A 45 pF


HC4052A 80
HC4053A 45
* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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217
MC74HC4051A, MC74HC4052A, MC74HC4053A

ADDITIONAL APPLICATION CHARACTERISTICS (GND = 0 V)


Limit*
VCC VEE
Symbol Parameter Condition V V 25°C Unit
BW Maximum On−Channel Bandwidth fin = 1MHz Sine Wave; Adjust fin Voltage to ‘51 ‘52 ‘53 MHz
or Minimum
Mi i F
Frequency R
Response Obt i 0dBm
Obtain 0dB att VOS; Increase
I fin
2.25 −2.25 80 95 120
(Figure 6) Frequency Until dB Meter Reads −3dB;
4.50 −4.50 80 95 120
RL = 50Ω, CL = 10pF
6.00 −6.00 80 95 120
— Off−Channel Feedthrough Isolation fin = Sine Wave; Adjust fin Voltage to 2.25 −2.25 −50 dB
(Figure 7) Obtain 0dBm at VIS 4.50 −4.50 −50
fin = 10kHz, RL = 600Ω, CL = 50pF 6.00 −6.00 −50
2.25 −2.25 −40
4.50 −4.50 −40
fin = 1.0MHz, RL = 50Ω, CL = 10pF 6.00 −6.00 −40
— Feedthrough Noise. Vin ≤ 1MHz Square Wave (tr = tf = 6ns); 2.25 −2.25 25 mVPP
Channel−Select Input to Common Adjust RL at Setup so that IS = 0A; 4.50 −4.50 105
I/O (Figure 8) Enable = GND RL = 600Ω, CL = 50pF 6.00 −6.00 135
2.25 −2.25 35
4.50 −4.50 145
RL = 10kΩ, CL = 10pF 6.00 −6.00 190
— Crosstalk Between Any Two fin = Sine Wave; Adjust fin Voltage to 2.25 −2.25 −50 dB
Switches (Figure 12) Obtain 0dBm at VIS 4.50 −4.50 −50
(Test does not apply to HC4051A) fin = 10kHz, RL = 600Ω, CL = 50pF 6.00 −6.00 −50
2.25 −2.25 −60
4.50 −4.50 −60
fin = 1.0MHz, RL = 50Ω, CL = 10pF 6.00 −6.00 −60
THD Total Harmonic Distortion
fin = 1kHz, RL = 10kΩ, CL = 50pF %
(Figure 14)THD = THDmeasured − THDsource
VIS = 4.0VPP sine wave 2.25 −2.25 0.10
VIS = 8.0VPP sine wave 4.50 −4.50 0.08
VIS = 11.0VPP sine wave 6.00 −6.00 0.05
*Limits not tested. Determined by design and verified by qualification.

300 180
160
250
Ron , ON RESISTANCE (OHMS)

Ron , ON RESISTANCE (OHMS)

140
200 120
125°C 125°C
100
150
25°C 80
25°C
−55 °C
100 60
40 −55 °C
50
20
0 0
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0
VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE

Figure 1a. Typical On Resistance, VCC − VEE = 2.0 V Figure 1b. Typical On Resistance, VCC − VEE = 3.0 V

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218
MC74HC4051A, MC74HC4052A, MC74HC4053A

120 105

100 90
Ron , ON RESISTANCE (OHMS)

Ron , ON RESISTANCE (OHMS)


75 125°C
80
125°C
60
60 25°C
25°C 45
−55 °C
40
−55 °C 30

20 15

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE

Figure 1c. Typical On Resistance, VCC − VEE = 4.5 V Figure 1d. Typical On Resistance, VCC − VEE = 6.0 V

80 60

70
50
Ron , ON RESISTANCE (OHMS)

Ron , ON RESISTANCE (OHMS)


125°C
60
40
50 25°C
125°C
40 30
−55 °C
30 25°C
20
20 −55 °C
10
10
0 0
−4.5 −3.5 −2.5 −1.5 −0.5 0.5 1.5 2.5 3.5 4.5 −6.0 −5.0 −4.0 −3.0 −2.0 −1.0 0 1.0 2.0 3.0 4.0 5.0 6.0
VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE VIS, INPUT VOLTAGE (VOLTS), REFERENCED TO VEE

Figure 1e. Typical On Resistance, VCC − VEE = 9.0 V Figure 1f. Typical On Resistance, VCC − VEE = 12.0 V

PLOTTER

PROGRAMMABLE
POWER MINI COMPUTER DC ANALYZER
SUPPLY
− + VCC
DEVICE
UNDER TEST

ANALOG IN COMMON OUT

GND VEE

Figure 2. On Resistance Test Set−Up

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219
MC74HC4051A, MC74HC4052A, MC74HC4053A

VCC VCC

VCC VCC
VEE 16 VEE 16
ANALOG I/O
OFF OFF
VCC A VCC
NC OFF COMMON O/I OFF COMMON O/I

VIH 6 VIH 6
7 7
8 8
VEE VEE

Figure 3. Maximum Off Channel Leakage Current, Figure 4. Maximum Off Channel Leakage Current,
Any One Channel, Test Set−Up Common Channel, Test Set−Up

VCC VOS
VCC VCC
A 16 0.1µF 16 dB
ON fin ON METER
VEE N/C CL* RL
OFF COMMON O/I
VCC ANALOG I/O

VIL 6 6
7 7
8 8
VEE VEE
*Includes all probe and jig capacitance

Figure 5. Maximum On Channel Leakage Current, Figure 6. Maximum On Channel Bandwidth,


Channel to Channel, Test Set−Up Test Set−Up

VIS VCC VOS VCC


0.1µF 16 dB 16
RL
fin OFF METER ON/OFF COMMON O/I
TEST
RL CL* RL ANALOG I/O
POINT
OFF/ON RL CL*
RL

6 6
7 7 VCC
8 Vin ≤ 1 MHz 8 11
tr = tf = 6 ns
VEE VCC VEE
CHANNEL SELECT CHANNEL SELECT
VIL or VIH GND
*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 7. Off Channel Feedthrough Isolation, Figure 8. Feedthrough Noise, Channel Select to
Test Set−Up Common Out, Test Set−Up

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220
MC74HC4051A, MC74HC4052A, MC74HC4053A

VCC
VCC
16
VCC
CHANNEL ON/OFF COMMON O/I
50% TEST
SELECT ANALOG I/O
POINT
OFF/ON CL*
GND
tPLH tPHL

6
ANALOG 7
OUT 50%
8

CHANNEL SELECT

*Includes all probe and jig capacitance

Figure 9a. Propagation Delays, Channel Select Figure 9b. Propagation Delay, Test Set−Up Channel
to Analog Out Select to Analog Out

VCC
16
ANALOG I/O COMMON O/I
VCC TEST
ON
ANALOG POINT
IN 50% CL*
GND
tPLH tPHL
6
7
ANALOG 8
OUT 50%

*Includes all probe and jig capacitance

Figure 10a. Propagation Delays, Analog In Figure 10b. Propagation Delay, Test Set−Up
to Analog Out Analog In to Analog Out

tf tr POSITION 1 WHEN TESTING tPHZ AND tPZH


VCC 1 POSITION 2 WHEN TESTING tPLZ AND tPZL
90%
ENABLE 50% 2
VCC
10%
GND VCC 1kΩ
tPZL tPLZ 16
HIGH 1 ANALOG I/O
IMPEDANCE TEST
ANALOG 2 ON/OFF
50% POINT
OUT 10% CL*
VOL
tPZH tPHZ
ENABLE
VOH 6
90%
ANALOG 7
OUT 50% 8
HIGH
IMPEDANCE

Figure 11a. Propagation Delays, Enable to Figure 11b. Propagation Delay, Test Set−Up
Analog Out Enable to Analog Out

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221
MC74HC4051A, MC74HC4052A, MC74HC4053A

VCC
VIS A
VCC
16 16
RL VOS
fin ON ON/OFF COMMON O/I
ANALOG I/O NC
0.1µF OFF/ON

OFF
VEE RL CL* RL CL* VCC
RL 6
7
6 VEE 8 11
7
8 CHANNEL SELECT

*Includes all probe and jig capacitance

Figure 12. Crosstalk Between Any Two Figure 13. Power Dissipation Capacitance,
Switches, Test Set−Up Test Set−Up

0
VIS
VCC VOS −10 FUNDAMENTAL FREQUENCY
0.1µF 16 −20
TO
fin ON DISTORTION −30
RL METER
CL* −40
dB

−50
DEVICE
−60
6 SOURCE
−70
7
8 −80
VEE −90
*Includes all probe and jig capacitance
− 100
1.0 2.0 3.125
FREQUENCY (kHz)

Figure 14a. Total Harmonic Distortion, Test Set−Up Figure 14b. Plot, Harmonic Distortion

APPLICATIONS INFORMATION

The Channel Select and Enable control pins should be at outputs to VCC or GND through a low value resistor helps
VCC or GND logic levels. VCC being recognized as a logic minimize crosstalk and feedthrough noise that may be
high and GND being recognized as a logic low. In this picked up by an unused switch.
example: Although used here, balanced supplies are not a
VCC = +5V = logic high requirement. The only constraints on the power supplies are
GND = 0V = logic low that:
The maximum analog voltage swings are determined by VCC − GND = 2 to 6 volts
the supply voltages VCC and VEE. The positive peak analog VEE − GND = 0 to −6 volts
voltage should not exceed VCC. Similarly, the negative peak VCC − VEE = 2 to 12 volts
analog voltage should not go below VEE. In this example, and VEE ≤ GND
the difference between VCC and VEE is ten volts. Therefore, When voltage transients above VCC and/or below VEE are
using the configuration of Figure 15, a maximum analog anticipated on the analog channels, external Germanium or
signal of ten volts peak−to−peak can be controlled. Unused Schottky diodes (Dx) are recommended as shown in Figure
analog inputs/outputs may be left floating (i.e., not 16. These diodes should be able to absorb the maximum
connected). However, tying unused analog inputs and anticipated current surges during clipping.

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MC74HC4051A, MC74HC4052A, MC74HC4053A

VCC VCC
+5V VCC
16 Dx 16 Dx
+5V +5V
ANALOG ANALOG
ON ON/OFF
−5V SIGNAL SIGNAL −5V
Dx Dx

VEE VEE

6 11 TO EXTERNAL CMOS
7 10 CIRCUITRY 0 to 5V 7
8 9 DIGITAL SIGNALS 8
−5V VEE

Figure 15. Application Example Figure 16. External Germanium or


Schottky Clipping Diodes

+5V +5V

+5V 16 +5V +5V 16 +5V


ANALOG ANALOG ANALOG ANALOG
ON/OFF ON/OFF
VEE SIGNAL SIGNAL VEE VEE SIGNAL SIGNAL VEE
+5V
*
R R R +5V
6 11 6 11
LSTTL/NMOS LSTTL/NMOS
7 10 7 10
CIRCUITRY CIRCUITRY
8 9 8 9
VEE VEE
* 2K ≤ R ≤ 10K HCT
BUFFER
a. Using Pull−Up Resistors b. Using HCT Interface
Figure 17. Interfacing LSTTL/NMOS to CMOS Inputs

11 LEVEL 13
A X0
SHIFTER

14
X1

10 LEVEL 15
B X2
SHIFTER

12
X3

9 LEVEL 1
C X4
SHIFTER

5
X5

6 LEVEL 2
ENABLE X6
SHIFTER

4
X7

3
X
Figure 18. Function Diagram, HC4051A

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223
MC74HC4051A, MC74HC4052A, MC74HC4053A

10 LEVEL 12
A X0
SHIFTER

14
X1

9 LEVEL 15
B X2
SHIFTER

11
X3
13
X
6 LEVEL 1
ENABLE Y0
SHIFTER

5
Y1

2
Y2

4
Y3

3
Y

Figure 19. Function Diagram, HC4052A

11 LEVEL 13
A X1
SHIFTER

12
X0
14
X
10 LEVEL 1
B Y1
SHIFTER

2
Y0
15
Y
9 LEVEL 3
C Z1
SHIFTER

5
Z0
4
Z
6 LEVEL
ENABLE
SHIFTER

Figure 20. Function Diagram, HC4053A

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224
MC74HC4051A, MC74HC4052A, MC74HC4053A

ORDERING & SHIPPING INFORMATION


Device Package Shipping
MC74HC4051AN PDIP−16 500 Units / Unit Pak
MC74HC4051AD SOIC−16 48 Units / Rail
MC74HC4051ADR2 SOIC−16 2500 Units / Tape & Reel
MC74HC4051ADT TSSOP−16 96 Units / Rail
MC74HC4051ADTR2 TSSOP−16 2500 Units / Tape & Reel
MC74HC4051ADW SOIC WIDE 48 Units / Rail
MC74HC4051ADWR2 SOIC WIDE 1000 Units / Tape & Reel
MC74HC4051AF SOEIAJ−16 See Note 1
MC74HC4051AFEL SOEIAJ−16 See Note 1
MC74HC4052AN PDIP−16 500 Units / Unit Pak
MC74HC4052AD SOIC−16 48 Units / Rail
MC74HC4052ADR2 SOIC−16 2500 Units / Tape & Reel
MC74HC4052ADT TSSOP−16 96 Units / Rail
MC74HC4052ADTR2 TSSOP−16 2500 Units / Tape & Reel
MC74HC4052ADW SOIC WIDE 48 Units / Rail
MC74HC4052ADWR2 SOIC WIDE 1000 Units / Tape & Reel
MC74HC4052AF SOEIAJ−16 See Note 1
MC74HC4052AFEL SOEIAJ−16 See Note 1
MC74HC4053AN PDIP−16 500 Units / Unit Pak
MC74HC4053AD SOIC−16 48 Units / Rail
MC74HC4053ADR2 SOIC−16 2500 Units / Tape & Reel
MC74HC4053ADT TSSOP−16 96 Units / Rail
MC74HC4053ADTR2 TSSOP−16 2500 Units / Tape & Reel
MC74HC4053ADW SOIC WIDE 48 Units / Rail
MC74HC4053ADWR2 SOIC WIDE 1000 Units / Tape & Reel
MC74HC4053AF SOEIAJ−16 See Note 1
MC74HC4053AFEL SOEIAJ−16 See Note 1
1. For ordering information on the EIAJ version of the SOIC packages, please contact your local ON Semiconductor representative.

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225
MC74HC4060A

14−Stage Binary Ripple


Counter With Oscillator
High−Performance Silicon−Gate CMOS
The MC74C4060A is identical in pinout to the standard CMOS
MC14060B. The device inputs are compatible with standard CMOS
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outputs; with pullup resistors, they are compatible with LSTTL
outputs. MARKING
This device consists of 14 master−slave flip−flops and an oscillator DIAGRAMS
with a frequency that is controlled either by a crystal or by an RC 16
circuit connected externally. The output of each flip−flop feeds the PDIP−16
N SUFFIX MC74HC4060AN
next and the frequency at each output is half of that of the preceding 16 AWLYYWW
CASE 648
one. The state of the counter advances on the negative−going edge of 1
the Osc In. The active−high Reset is asynchronous and disables the 1
16
oscillator to allow very low power consumption during stand−by
SO−16
operation. HC4060A
D SUFFIX
State changes of the Q outputs do not occur simultaneously because 16
CASE 751B
AWLYWW
of internal ripple delays. Therefore, decoded output signals are subject 1
1
to decoding spikes and may have to be gated with Osc Out 2 of the 16
HC4060A.
TSSOP−16 HC40
• Output Drive Capability: 10 LSTTL Loads 16 DT SUFFIX 60A
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
CASE 948F ALYW

• Operating Voltage Range: 2 to 6 V 1


• Low Input Current: 1 µA
A
WL
= Assembly Location
= Wafer Lot
• High Noise Immunity Characteristic of CMOS Devices YY = Year
• In Compliance With JEDEC Standard No. 7A Requirements WW = Work Week

• Chip Complexity: 390 FETs or 97.5 Equivalent Gates LOGIC DIAGRAM


Osc Out 1 Osc Out 2
Pinout: 16−Lead Plastic Package (Top View) 10 9
Osc Osc
7
VCC Q10 Q8 Q9 Reset Osc In Out 1 Out 2 Q4
5
16 15 14 13 12 11 10 9 Q5
11 4
Osc In Q6
6
Q7
14
Q8
13
Q9
15
Q10
1
Q12
1 2 3 4 5 6 7 8 2
Q13
Q12 Q13 Q14 Q6 Q5 Q7 Q4 GND 3
Q14
12 Pin 16 = VCC
FUNCTION TABLE Reset
Pin 8 = GND
Clock Reset Output State
L No Change
ORDERING INFORMATION
L Advance to Next State
Device Package Shipping
X H All Outputs Are Low
MC74HC4060AN PDIP−16 2000 / Box
MC74HC4060AD SOIC−16 48 / Rail
MC74HC4060ADR2 SOIC−16 2500 / Reel
MC74HC4060ADT TSSOP−16 96 / Rail
MC74HC4060ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2003 226 Publication Order Number:


March, 2003 − Rev. 3 MC74HC4060A/D
MC74HC4060A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature Range – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package
*Maximum Ratings are those values beyond which damage to the device may occur.
260
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.5*
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature Range, All Package Types

ÎÎ
ÎÎÎ
Input Rise/Fall Time VCC = 2.0 V 0
– 55
1000
+ 125
ns
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400
*The oscillator is guaranteed to function at 2.5 V minimum. However, parametrics are tested
at 2.0 V by driving Pin 11 with an external clock source.

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC −0.1V 2.0 1.50 1.50 1.50 V
Voltage |Iout| ≤ 20µA 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 2.0 0.50 0.50 0.50 V
Voltage |Iout| ≤ 20µA 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage (Q4−Q10, Q12−Q14) |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VIH or VIL |Iout| ≤ 2.4mA 3.0 2.48 2.34 2.20
|Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 5.2mA 6.0 5.48 5.34 5.20

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227
MC74HC4060A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
Voltage (Q4−Q10, Q12−Q14) |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 2.4mA 3.0 0.26 0.33 0.40
|Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 5.2mA 6.0 0.26 0.33 0.40
VOH Minimum High−Level Output Vin = VCC or GND 2.0 1.9 1.9 1.9 V
Voltage (Osc Out 1, Osc Out 2) |Iout| ≤ 20µA 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin =VCC or GND |Iout| ≤ 0.7mA 3.0 2.48 2.34 2.20
|Iout| ≤ 1.0mA 4.5 3.98 3.84 3.70
|Iout| ≤ 1.3mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Vin = VCC or GND 2.0 0.1 0.1 0.1 V
Voltage (Osc Out 1, Osc Out 2) |Iout| ≤ 20µA 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin =VCC or GND |Iout| ≤ 0.7mA 3.0 0.26 0.33 0.40
|Iout| ≤ 1.0mA 4.5 0.26 0.33 0.40
|Iout| ≤ 1.3mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA
Current (per Package) Iout = 0µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 6.0 9.0 8.0 MHz
(Figures 1 and 4) 3.0 10 14 12
4.5 30 28 25
6.0 50 45 40
tPLH, Maximum Propagation Delay, Osc In to Q4* 2.0 300 375 450 ns
tPHL (Figures 1 and 4) 3.0 180 200 250
4.5 60 75 90
6.0 51 64 75
tPLH, Maximum Propagation Delay, Osc In to Q14* 2.0 500 750 1000 ns
tPHL (Figures 1 and 4) 3.0 350 450 600
4.5 250 275 300
6.0 200 220 250
tPHL Maximum Propagation Delay, Reset to Any Q 2.0 195 245 300 ns
(Figures 2 and 4) 3.0 75 100 125
4.5 39 49 61
6.0 33 42 53
tPLH, Maximum Propagation Delay, Qn to Qn+1 2.0 75 95 125 ns
tPHL (Figures 3 and 4) 3.0 60 75 95
4.5 15 19 24
6.0 13 16 20

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228
MC74HC4060A

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) − continued


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 4) 3.0 27 32 36
4.5 15 19 22
6.0 13 16 19
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
* For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations:
VCC = 2.0 V: tP = [93.7 + 59.3 (n−1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n−1)] ns
VCC = 3.0 V: tP = [61.5+ 34.4 (n−1)] ns VCC = 6.0 V: tP = [24.4 + 12 (n−1)] ns

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Package)* 35 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

TIMING REQUIREMENTS (Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
trec Minimum Recovery Time, Reset Inactive to Clock 2.0 100 125 150 ns
(Figure 2) 3.0 75 100 120
4.5 20 25 30
6.0 17 21 25
tw Minimum Pulse Width, Clock 2.0 75 95 110 ns
(Figure 1) 3.0 27 32 36
4.5 15 19 23
6.0 13 16 19
tw Minimum Pulse Width, Reset 2.0 75 95 110 ns
(Figure 2) 3.0 27 32 36
4.5 15 19 23
6.0 13 16 19
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figure 1) 3.0 800 800 800
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

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229
MC74HC4060A

PIN DESCRIPTIONS

INPUTS Osc Out 1, Osc Out 2 (Pins 9, 10)


Osc In (Pin 11) Oscillator outputs. These pins are used in conjunction
Negative−edge triggering clock input. A high−to−low with Osc In and the external components to form an
transition on this input advances the state of the counter. Osc oscillator. When Osc In is being driven with an external
In may be driven by an external clock source. clock source, Osc Out 1 and Osc Out 2 must be left open
circuited. With the crystal oscillator configuration in Figure
Reset (Pin 12)
6, Osc Out 2 must be left open circuited.
Active−high reset. A high level applied to this input
asynchronously resets the counter to its zero state (forcing
all Q outputs low) and disables the oscillator.

OUTPUTS
Q4—Q10, Q12−Q14 (Pins 7, 5, 4, 6, 13, 15, 1, 2, 3)
Active−high outputs. Each Qn output divides the Clock
input frequency by 2N. The user should note the Q1, Q2, Q3
and Q11 are not available as outputs.

SWITCHING WAVEFORMS

tw
tf tr VCC
VCC Reset 50%
90%
Osc In 50% GND
10% GND tPHL
tw
1/fMAX
tPLH tPHL Q 50%

90% trec
Q 50% VCC
10%
Osc In 50%
tTLH tTHL GND

Figure 1. Figure 2.

TEST
POINT

VCC
Qn OUTPUT
50%
DEVICE
GND UNDER
tPLH tPHL TEST CL*

Qn+1 50%

*Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

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230
MC74HC4060A

Q4 Q5 Q12 Q13 Q14


7 5 1 2 3

C Q C Q C Q C Q C Q C Q

C Q C Q C Q C Q C Q C

R R
9
Osc Out 2

Q6 = Pin 4 Q10 = Pin 15


10 Q7 = Pin 6 VCC = Pin 16
Osc Out 1 Q8 = Pin 14 GND = Pin 8
Q9 = Pin 13

11
Osc In
12
Reset

Figure 5. Expanded Logic Diagram

12 For 2.0V ≤ VCC ≤ 6.0V


Reset 10Rtc > RS > 2Rtc
400Hz ≤ f ≤ 400Khz:
Osc In 11 Osc Out 1 10 Osc Out 2 9 1  (finHz, R inohms, C infarads)
f tc tc
Rtc 3RtcCtc
RS Ctc
The formula may vary for other frequencies.

Figure 6. Oscillator Circuit Using RC Configuration

12
Reset

Osc In 11 Osc Out 1 10 9 Osc Out 2


Rf

R1

C1 C2

Figure 7. Pierce Crystal Oscillator Circuit

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231
MC74HC4060A

TABLE 1. CRYSTAL OSCILLATOR AMPLIFIER SPECIFICATIONS (TA = 25°C; Input = Pin 11, Output = Pin 10)
Type Positive Reactance (Pierce)
Input Resistance, Rin 60MΩ Minimum
Output Impedance, Zout (4.5V Supply) 200Ω (See Text)
Input Capacitance, Cin 5pF Typical
Output Capacitance, Cout 7pF Typical
Series Capacitance, Ca 5pF Typical
Open Loop Voltage Gain with Output at Full Swing, α 3Vdc Supply 5.0 Expected Minimum
4Vdc Supply 4.0 Expected Minimum
5Vdc Supply 3.3 Expected Minimum
6Vdc Supply 3.1 Expected Minimum

PIERCE CRYSTAL OSCILLATOR DESIGN

RS LS CS

1 2 1 2 1 Re Xe 2
CO

Value are supplied by crystal manufacturer (parallel resonant crystal).

Figure 8. Equivalent Crystal Networks

RS −jXC2 R
Rload
Ca
−jXCo
jXLs
Zload Xload
−jXCs −jXC Cin Cout

NOTE: C = C1 + Cin and R = R1 + Rout. Co is considered as part of


the load. Ca and Rf typically have minimal effect below 2MHz. Values are listed in Table 1.

Figure 9. Series Equivalent Crystal Load Figure 10. Parasitic Capacitances of the Amplifier

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232
MC74HC4060A

DESIGN PROCEDURES

The following procedure applies for oscillators operating below 2MHz where Z is a resistor R1. Above 2MHz, additional
impedance elements should be considered: Cout and Ca of the amp, feedback resistor Rf, and amplifier phase shift error from
180°C.
Step 1: Calculate the equivalent series circuit of the crystal at the frequency of oscillation.
 jXCo(Rs  jXLs  jXCs)
Ze   Re  jXe
 jXCo  Rs  jXLs  jXCs
Reactance jXe should be positive, indicating that the crystal is operating as an inductive reactance at the oscillation frequency.
The maximum Rs for the crystal should be used in the equation.
Step 2: Determine β, the attenuation, of the feedback network. For a closed-loop gain of 2,Aνβ = 2,β = 2/Aν where Aν is
the gain of the HC4060A amplifier.
Step 3: Determine the manufacturer’s loading capacitance. For example: A manufacturer may specify an external load
capacitance of 32pF at the required frequency.
Step 4: Determine the required Q of the system, and calculate Rload, For example, a manufacturer specifies a crystal Q of
100,000. In-circuit Q is arbitrarily set at 20% below crystal Q or 80,000. Then Rload = (2πfoLS/Q) − Rs where Ls and Rs are
crystal parameters.
Step 5: Simultaneously solve, using a computer,
XC  XC2
 (with feedback phase shift = 180°) ( Eq 1 )
R  Re  XC2 (Xe  XC)

ReXC2
Xe  XC2  XC   XCload (where the loading capacitor is an external load, not including Co) ( Eq 2 )
R
RXCoXC2 [(XC  XC2)(XC  XCo)  XC(XC  XCo  XC2)]
Rload  ( Eq 3 )
X2C2(XC  XCo)2  R2(XC  XCo  XC2)2

Here R = Rout + R1. Rout is amp output resistance, R1 is Z. The C corresponding to XC is given by C = C1 + Cin.
Alternately, pick a value for R1 (i.e, let R1 = RS). Solve Equations 1 and 2 for C1 and C2. Use Equation 3 and the fact that
Q = 2πfoLs/(Rs + Rload) to find in-circuit Q. If Q is not satisfactory pick another value for R1 and repeat the procedure.
CHOOSING R1 the first overtone. Rf must be large enough so as to not affect
Power is dissipated in the effective series resistance of the the phase of the feedback network in an appreciable manner.
crystal. The drive level specified by the crystal manufacturer
is the maximum stress that a crystal can withstand without ACKNOWLEDGEMENTS AND RECOMMENDED
damage or excessive shift in frequency. R1 limits the drive REFERENCES
level. The following publications were used in preparing this
To verify that the maximum dc supply voltage does not data sheet and are hereby acknowledged and recommended
overdrive the crystal, monitor the output frequency as a for reading:
function of voltage at Osc Out 2 (Pin 9). The frequency Technical Note TN-24, Statek Corp.
should increase very slightly as the dc supply voltage is Technical Note TN-7, Statek Corp.
increased. An overdriven crystal will decrease in frequency D. Babin, “Designing Crystal Oscillators”, Machine
or become unstable with an increase in supply voltage. The Design, March 7, 1985.
operating supply voltage must be reduced or R1 must be D. Babin, “Guidelines for Crystal Oscillator Design”,
increased in value if the overdriven condition exists. The Machine Design, April 25, 1985.
user should note that the oscillator start-up time is ALSO RECOMMENDED FOR READING:
proportional to the value of R1. E. Hafner, “The Piezoelectric Crystal Unit-Definitions
SELECTING Rf and Method of Measurement”, Proc. IEEE, Vol. 57, No. 2,
The feedback resistor, Rf, typically ranges up to 20MΩ. Rf Feb., 1969.
determines the gain and bandwidth of the amplifier. Proper D. Kemper, L. Rosine, “Quartz Crystals for Frequency
bandwidth insures oscillation at the correct frequency plus Control”, Electro-Technology, June, 1969.
roll-off to minimize gain at undesirable frequencies, such as P. J. Ottowitz, “A Guide to Crystal Selection”, Electronic
Design, May, 1966.

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MC74HC4060A

1 2 4 8 16 32 64 128 256 512 1024 2048 4096 8192 16384


Clock
Reset

Q4

Q5

Q6

Q7

Q8

Q9

Q10

Q12

Q13

Q14

Figure 11. Timing Diagram

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234
MC74HC4066A

Quad Analog Switch/


Multiplexer/Demultiplexer
High−Performance Silicon−Gate CMOS
The MC74HC4066A utilizes silicon−gate CMOS technology to
achieve fast propagation delays, low ON resistances, and low
O F F −c h a n n e l l e a k a g e c u r r e n t . T h i s b i l a t e r a l s w i t c h / http://onsemi.com
multiplexer/demultiplexer controls analog and digital voltages that
MARKING DIAGRAMS
may vary across the full power−supply range (from VCC to GND).
The HC4066A is identical in pinout to the metal−gate CMOS 14
DIP−14
MC14016 and MC14066. Each device has four independent switches. N SUFFIX MC74HC4066AN
The device has been designed so the ON resistances (RON) are more CASE 646 AWLYYWW
linear over input voltage than RON of metal−gate CMOS analog 1
switches. 14
The ON/OFF control inputs are compatible with standard CMOS SO−14
HC4066A
outputs; with pullup resistors, they are compatible with LSTTL outputs. D SUFFIX
AWLYWW
CASE 751A
For analog switches with voltage−level translators, see the HC4316A.
• Fast Switching and Propagation Speeds 1

• High ON/OFF Output Voltage Ratio


14
TSSOP−14 HC40
• Low Crosstalk Between Switches DT SUFFIX 66A
• Diode Protection on All Inputs/Outputs CASE 948G ALYW
1
• Wide Power−Supply Voltage Range (VCC − GND) = 2.0 to 12.0 Volts
14
• Analog Input Voltage Range (VCC − GND) = 2.0 to 12.0 Volts SOEIAJ−14
• Improved Linearity and Lower ON Resistance over Input Voltage F SUFFIX 74HC4066A
ALYW
than the MC14016 or MC14066 CASE 965
• Low Noise 1
• Chip Complexity: 44 FETs or 11 Equivalent Gates A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
LOGIC DIAGRAM WW, W = Work Week
1 2
XA YA PIN ASSIGNMENT
13 XA 1 14 VCC
A ON/OFF CONTROL
4 3 YA 2 13 A ON/OFF CONTROL
XB YB
YB 3 12 D ON/OFF CONTROL
5
B ON/OFF CONTROL XB 4 11 XD
ANALOG
8 9 OUTPUTS/INPUTS B ON/OFF CONTROL 5 10 YD
XC YC
C ON/OFF CONTROL 6 9 YC
6
C ON/OFF CONTROL GND 7 8 XC
11 10
XD YD
ORDERING INFORMATION
12
D ON/OFF CONTROL Device Package Shipping
ANALOG INPUTS/OUTPUTS = XA, XB, XC, XD MC74HC4066AN DIP−14 2000 / Box
PIN 14 = VCC MC74HC4066ADR2 SO−14 2500 / Reel
PIN 7 = GND MC74HC4066ADT TSSOP−14 96 / Rail
MC74HC4066ADTR2 TSSOP−14 2500 / Reel
FUNCTION TABLE
On/Off Control State of
Input Analog Switch
L Off
H On

 Semiconductor Components Industries, LLC, 2002 235 Publication Order Number:


June, 2002 − Rev. 5 MC74HC4066A/D
MC74HC4066A

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MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
circuitry to guard against damage
VCC Positive DC Supply Voltage (Referenced to GND) – 0.5 to + 14.0 V
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIS

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin ÎÎÎ
Analog Input Voltage (Referenced to GND)

ÎÎÎÎÎ
ÎÎÎ
Digital Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
V
V
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated

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I
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PD ÎÎÎ
DC Current Into or Out of Any Pin

ÎÎÎÎÎ
ÎÎÎ
Power Dissipation in Still Air, Plastic DIP†
± 25
750
mA
mW
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
EIAJ/SOIC Package† 500
range GND  (Vin or Vout)  VCC.
TSSOP Package† 450

ÎÎÎÎ
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ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
Tstg Storage Temperature – 65 to + 150 °C tied to an appropriate logic voltage

ÎÎÎÎ
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ÎÎÎÎÎ
ÎÎÎ
level (e.g., either GND or VCC).
TL Lead Temperature, 1 mm from Case for 10 Seconds °C

ÎÎÎÎ
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ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
(Plastic DIP, SOIC or TSSOP Package) 260 I/O pins must be connected to a
*Maximum Ratings are those values beyond which damage to the device may occur. properly terminated line or bus.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating − Plastic DIP: – 10 mW/°C from 65° to 125°C
EIAJ/SOIC Package: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
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ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIS
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
Positive DC Supply Voltage (Referenced to GND)

ÎÎÎÎÎÎ
ÎÎÎ
Analog Input Voltage (Referenced to GND) GND
2.0 12.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Vin
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIO*
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
Digital Input Voltage (Referenced to GND)

ÎÎÎÎÎÎ
ÎÎÎ
Static or Dynamic Voltage Across Switch
GND

VCC
1.2
V
V

ÎÎÎÎ
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ÎÎÎÎ
TA
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
Operating Temperature, All Package Types

ÎÎÎÎÎÎ
ÎÎÎ
Input Rise and Fall Time, ON/OFF Control
–55 + 125 °C
ns

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ÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
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Inputs (Figure 10)

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ÎÎÎ
VCC = 2.0 V
VCC = 3.0 V
VCC = 4.5 V
0
0
0
1000
600
500

ÎÎÎÎ
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ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
VCC = 9.0 V 0 400
VCC = 12.0 V 0 250
*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may
contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.

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DC ELECTRICAL CHARACTERISTIC Digital Section (Voltages Referenced to GND)

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Guaranteed Limit

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VCC – 55 to  
Symbol Parameter Test Conditions V 25°C 85°C 125°C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIH

ÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎÎ
Minimum High−Level Voltage

ÎÎÎ
ÎÎÎÎÎÎ
ON/OFF Control Inputs
Ron = Per Spec 2.0
3.0
1.5
2.1
1.5
2.1
1.5
2.1
V

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4.5 3.15 3.15 3.15
9.0 6.3 6.3 6.3

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12.0 8.4 8.4 8.4

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ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
VIL Maximum Low−Level Voltage Ron = Per Spec 2.0 0.5 0.5 0.5 V
ON/OFF Control Inputs 3.0 0.9 0.9 0.9

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4.5
9.0
12.0
1.35
2.7
3.6
1.35
2.7
3.6
1.35
2.7
3.6

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ÎÎÎÎ
Iin
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
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ÎÎÎÎÎÎ
ON/OFF Control Inputs
Vin = VCC or GND 12.0 ± 0.1 ± 1.0 ± 1.0 A

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ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
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ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND 6.0 2 20 40 A
VIO = 0 V 12.0 4 40 160
NOTE: Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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236
MC74HC4066A

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DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to GND)

ÎÎÎÎ ÎÎ Guaranteed Limit

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ÎÎÎ
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VCC – 55 to

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ÎÎÎ
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ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions V 25°C  85°C  125°C Unit


ÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Ron Maximum “ON” Resistance Vin = VIH 2.0† − − −
VIS = VCC to GND 3.0† − − −

ÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
IS  2.0 mA (Figures 1, 2) 4.5 120 160 200

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ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
9.0 70 85 100
12.0 70 85 100

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ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VIH
VIS = VCC or GND (Endpoints)
IS  2.0 mA (Figures 1, 2)
2.0
3.0
4.5


70


85


120

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ÎÎÎ ÎÎÎÎ
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9.0
12.0
50
50
60
60
80
80

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ÎÎÎ
ÎÎÎÎ
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Ron Maximum Difference in “ON” Vin = VIH 2.0 − − − 
Resistance Between Any Two VIS = 1/2 (VCC − GND) 4.5 20 25 30

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ÎÎÎÎÎÎ
Channels in the Same Package IS  2.0 mA 9.0 15 20 25

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ÎÎÎÎ
ÎÎÎÎÎÎ
12.0 15 20 25
A

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ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Ioff Maximum Off−Channel Leakage Vin = VIL 12.0 0.1 0.5 1.0
Current, Any One Channel VIO = VCC or GND

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ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Switch Off (Figure 3)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Ion Maximum On−Channel Leakage Vin = VIH 12.0 0.1 0.5 1.0 A
Current, Any One Channel VIS = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ (Figure 4)

†At supply voltage (VCC) approaching 3 V the analog switch−on resistance becomes extremely non−linear. Therefore, for low−voltage
operation, it is recommended that these devices only be used to control digital signals.
NOTE: Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, ON/OFF Control Inputs: tr = tf = 6 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC – 55 to
V 25°C  85°C  125°C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Unit
tPLH, Maximum Propagation Delay, Analog Input to Analog Output 2.0 40 50 60 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(Figures 8 and 9)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ 3.0 30 40 50

ÎÎ
4.5 10 13 15
9.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
12.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLZ, Maximum Propagation Delay, ON/OFF Control to Analog Output 2.0 80 90 110 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHZ (Figures 10 and 11) 3.0 60 70 80
4.5 30 38 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
9.0 25 28 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
12.0 25 28 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPZL, Maximum Propagation Delay, ON/OFF Control to Analog Output 2.0 80 90 100 ns
tPZH (Figures 10 and 1 1) 3.0 45 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 25 32 37
9.0 25 32 37

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎC ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Maximum Capacitance ÎÎ
ÎÎ ON/OFF Control Input
12.0

25
10
32
10
37
10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Control Input = GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Analog I/O − 35 35 35
Feedthrough − 1.0 1.0 1.0
NOTES:
1. For propagation delays with loads other than 50 pF, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Switch) (Figure 13)* 15 pF
* Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC4066A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

ÎÎÎÎ
ÎÎÎ Limit*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC 25°C
Symbol Parameter Test Conditions V 54/74HC Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
BW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
or ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum On−Channel Bandwidth

ÎÎÎÎ
ÎÎÎ
fin = 1 MHz Sine Wave
Adjust fin Voltage to Obtain 0 dBm at VOS
4.5
9.0
150
160
MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Minimum Frequency Response Increase fin Frequency Until dB Meter Reads – 3 dB 12.0 160
(Figure 5) RL = 50 , CL = 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 6) ÎÎÎÎ
ÎÎÎ ÎÎÎ
Off−Channel Feedthrough Isolation

ÎÎÎÎ
ÎÎÎ
fin  Sine Wave
Adjust fin Voltage to Obtain 0 dBm at VIS
fin = 10 kHz, RL = 600 , CL = 50 pF
4.5
9.0
− 50
− 50
dB

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
12.0 − 50
fin = 1.0 MHz, RL = 50 , CL = 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 − 40
9.0 − 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
12.0 − 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
− Feedthrough Noise, Control to Vin  1 MHz Square Wave (tr = tf = 6 ns) 4.5 60 mVPP

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Switch Adjust RL at Setup so that IS = 0 A 9.0 130
( g
(Figure 7)) RL = 600 , CL = 50 pF 12.0 200

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
RL = 10 k, CL = 10 pF 4.5
9.0
30
65

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
12.0 100
fin  Sine Wave

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
− Crosstalk Between Any Two 4.5 – 70 dB
Switches Adjust fin Voltage to Obtain 0 dBm at VIS 9.0 – 70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
( g
(Figure 12)) fin = 10 kHz, RL = 600 , CL = 50 pF 12.0 – 70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
fin = 1.0 MHz, RL = 50 , CL = 10 pF 4.5 – 80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
9.0 – 80
12.0 – 80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
THD

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(Figure 14) ÎÎÎ
Total Harmonic Distortion

ÎÎÎÎ
ÎÎÎ
fin = 1 kHz, RL = 10 k, CL = 50 pF
THD = THDMeasured − THDSource
VIS = 4.0 VPP sine wave 4.5 0.10
%

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIS = 8.0 VPP sine wave
VIS = 11.0 VPP sine wave
*Guaranteed limits not tested. Determined by design and verified by qualification.
9.0
12.0
0.06
0.04

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MC74HC4066A

400

350

RON @ 2 V 300

250

200

150
+25 °C
100
+125°C
50 −55°C

0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1g. Typical On Resistance, VCC = 2.0 V

200
180
160
140
RON @ 3 V

120
100
80
60 +25 °C
40 +125°C
−55°C
20
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1h. Typical On Resistance, VCC = 3.0 V

200
180 +25 °C
+125°C
160
−55°C
140
RON @ 4.5 V

120
100
80
60
40
20
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1i. Typical On Resistance, VCC = 4.5 V

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239
MC74HC4066A

90

80

70

60
RON @ 6 V

50

40

30
+25 °C
20
+125°C
10 −55°C

0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1j. Typical On Resistance, VCC = 6.0 V

90
+25 °C
80
+125°C
70 −55°C
60
RON @ 9V

50

40

30

20

10

0
0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1k. Typical On Resistance, VCC = 9.0 V

60

50

40
RON @ 12 V

30

20
+25 °C
10 +125°C
−55°C
0
0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00

Vis, INPUT VOLTAGE (VOLTS), REFERENCED TO GROUND

Figure 1l. Typical On Resistance, VCC = 12.0 V

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MC74HC4066A

PLOTTER

PROGRAMMABLE
POWER MINI COMPUTER DC ANALYZER
SUPPLY
− + VCC
DEVICE
UNDER TEST

ANALOG IN COMMON OUT

GND

Figure 2. On Resistance Test Set−Up

VCC

VCC VCC
GND 14 VCC 14
A ON N/C
VCC A OFF GND

SELECTED VIL SELECTED VIH


CONTROL CONTROL
7 INPUT 7 INPUT

Figure 3. Maximum Off Channel Leakage Current, Figure 4. Maximum On Channel Leakage Current,
Any One Channel, Test Set−Up Test Set−Up

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MC74HC4066A

VCC VOS VIS VCC VOS


14 14
fin ON fin OFF
dB dB
0.1F CL* 0.1F CL*
METER RL METER

SELECTED
CONTROL
SELECTED VCC INPUT
CONTROL
7 INPUT 7

*Includes all probe and jig capacitance. *Includes all probe and jig capacitance.

Figure 5. Maximum On−Channel Bandwidth Figure 6. Off−Channel Feedthrough Isolation,


Test Set−Up Test Set−Up

VCC/2 VCC VCC/2

14

RL RL
VOS
OFF/ON IS
VCC
CL*
50%
SELECTED ANALOG IN
CONTROL GND
Vin ≤ 1 MHz 7 INPUT tPLH tPHL
tr = tf = 6 ns
VCC
GND CONTROL
50%
ANALOG OUT
*Includes all probe and jig capacitance.

Figure 7. Feedthrough Noise, ON/OFF Control to Figure 8. Propagation Delays, Analog In to


Analog Out, Test Set−Up Analog Out

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MC74HC4066A

VCC tr tf
14 VCC
90%
ANALOG IN ANALOG OUT TEST CONTROL 50%
ON POINT 10% GND
CL*
tPZL tPLZ
HIGH
IMPEDANCE
SELECTED VCC 50%
10% VOL
CONTROL
7 ANALOG
INPUT tPZH tPHZ
OUT
90% VOH
50%
*Includes all probe and jig capacitance. HIGH
IMPEDANCE

Figure 9. Propagation Delay Test Set−Up Figure 10. Propagation Delay, ON/OFF Control
to Analog Out

1
POSITIONWHEN TESTING tPHZ AND tPZH VIS
2
POSITIONWHEN TESTING tPLZ AND tPZL VCC
1
14
RL VOS
2
VCC fin ON
VCC 14 1 k 0.1 F
1
TEST OFF
ON/OFF POINT
2 VCC OR GND
CL* RL CL* RL CL*
RL
SELECTED
SELECTED
CONTROL VCC/2 VCC/2
CONTROL
INPUT
INPUT
7
7
VCC/2
*Includes all probe and jig capacitance. *Includes all probe and jig capacitance.

Figure 11. Propagation Delay Test Set−Up Figure 12. Crosstalk Between Any Two Switches,
Test Set−Up

VCC

A
VIS
14 VCC VOS
0.1 F TO
N/C OFF/ON N/C fin ON DISTORTION
CL* METER
RL

SELECTED VCC/2
7 CONTROL SELECTED VCC
INPUT CONTROL
7
INPUT
ON/OFF CONTROL

*Includes all probe and jig capacitance.

Figure 13. Power Dissipation Capacitance Figure 14. Total Harmonic Distortion, Test Set−Up
Test Set−Up

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MC74HC4066A

0
−10 FUNDAMENTAL FREQUENCY
−20
−30
−40

dBm
−50
DEVICE
−60
SOURCE
−70
−80
−90

1.0 2.0 3.0


FREQUENCY (kHz)
Figure 15. Plot, Harmonic Distortion

APPLICATION INFORMATION below, the difference between VCC and GND is twelve volts.
Therefore, using the configuration in Figure 16, a maximum
The ON/OFF Control pins should be at VCC or GND logic analog signal of twelve volts peak−to−peak can be
levels, VCC being recognized as logic high and GND being controlled.
recognized as a logic low. Unused analog inputs/outputs When voltage transients above VCC and/or below GND
may be left floating (not connected). However, it is are anticipated on the analog channels, external diodes (Dx)
advisable to tie unused analog inputs and outputs to VCC or are recommended as shown in Figure 17. These diodes
GND through a low value resistor. This minimizes crosstalk should be small signal, fast turn−on types able to absorb the
and feedthrough noise that may be picked−up by the unused maximum anticipated current surges during clipping. An
I/O pins. alternate method would be to replace the Dx diodes with
The maximum analog voltage swings are determined by Mosorbs (Mosorb is an acronym for high current surge
the supply voltages VCC and GND. The positive peak analog protectors). Mosorbs are fast turn−on devices ideally suited
voltage should not exceed VCC. Similarly, the negative peak for precise DC protection with no inherent wear out
analog voltage should not go below GND. In the example mechanism.

VCC VCC
VCC = 12 V
14 Dx 16 Dx
+ 12 V + 12 V
ANALOG I/O ANALOG O/I
ON ON
0V 0V
Dx Dx

SELECTED SELECTED
VCC
CONTROL CONTROL
OTHER CONTROL OTHER CONTROL
INPUT INPUT
INPUTS INPUTS
7 (VCC OR GND) 7 (VCC OR GND)

Figure 16. 12 V Application Figure 17. Transient Suppressor Application

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MC74HC4066A

+5 V +5 V

ANALOG 14 ANALOG ANALOG 14 ANALOG


SIGNALS SIGNALS SIGNALS SIGNALS

R* R* R* R* HC4066A HCT HC4066A


LSTTL/ LSTTL/ BUFFER
NMOS 5 NMOS 5
6 CONTROL 6 CONTROL
14 INPUTS 14 INPUTS
15 15
7 7
R* = 2 TO 10 k

a. Using Pull-Up Resistors b. Using HCT Buffer


Figure 18. LSTTL/NMOS to HCMOS Interface

VDD = 5 V VCC = 5 TO 12 V

13 1 16 ANALOG 14 ANALOG
3 SIGNALS SIGNALS
5 HC4066A
7 MC14504 2 5
9 4 6 CONTROL
11 6 14 INPUTS
14 8 10 15 7

Figure 19. TTL/NMOS−to−CMOS Level Converter


Analog Signal Peak−to−Peak Greater than 5 V
(Also see HC4316A)

1 OF 4
CHANNEL 4
SWITCHES

1 OF 4
CHANNEL 3
SWITCHES
COMMON I/O
1 OF 4
CHANNEL 2
SWITCHES


1 OF 4 OUTPUT
CHANNEL 1 1 OF 4
SWITCHES INPUT + LF356 OR
SWITCHES
EQUIVALENT
0.01 F
1 2 3 4
CONTROL INPUTS

Figure 20. 4−Input Multiplexer Figure 21. Sample/Hold Amplifier

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MC74HC4316A

Quad Analog Switch/


Multiplexer/Demultiplexer
with Separate Analog and
Digital Power Supplies
High−Performance Silicon−Gate CMOS http://onsemi.com

The MC74HC4316A utilizes silicon−gate CMOS technology to MARKING


achieve fast propagation delays, low ON resistances, and low DIAGRAMS
OFF−channel leakage current. This bilateral switch/multiplexer/
16
demultiplexer controls analog and digital voltages that may vary
PDIP−16
across the full analog power−supply range (from VCC to VEE). N SUFFIX HC4316AN
The HC4316A is similar in function to the metal−gate CMOS CASE 648 AWLYYWW
MC14016 and MC14066, and to the High−Speed CMOS HC4066A. 1
Each device has four independent switches. The device control and
Enable inputs are compatible with standard CMOS outputs; with
pullup resistors, they are compatible with LSTTL outputs. The device
has been designed so that the ON resistances (RON) are much more 16
linear over input voltage than RON of metal−gate CMOS analog SOIC−16
HC4316AD
D SUFFIX
switches. Logic−level translators are provided so that the On/Off AWLYWW
CASE 751B
Control and Enable logic−level voltages need only be VCC and GND, 1
while the switch is passing signals ranging between VCC and VEE.
When the Enable pin (active−low) is high, all four analog switches are
turned off. 16
• Logic−Level Translator for On/Off Control and Enable Inputs SOEIAJ−16
• F SUFFIX 74HC4316A
Fast Switching and Propagation Speeds ALYW
CASE 966
• High ON/OFF Output Voltage Ratio
• Diode Protection on All Inputs/Outputs 1
A = Assembly Location
• Analog Power−Supply Voltage Range (VCC − VEE) = 2.0 to 12.0 V WL or L = Wafer Lot
• Digital (Control) Power−Supply Voltage Range (VCC − GND) = YY or Y = Year
WW or W = Work Week
2.0 V to 6.0 V, Independent of VEE
• Improved Linearity of ON Resistance
• Chip Complexity: 66 FETs or 16.5 Equivalent Gates
ORDERING INFORMATION
• Pb−Free Packages are Available*
Device Package Shipping†
MC74HC4316AN PDIP−16 2000 / Box
MC74HC4316ANG PDIP−16 2000 / Box
(Pb−Free)

MC74HC4316AFEL SOEIAJ−16 2000 / Reel

MC74HC4316AD SOIC−16 48 / Rail

MC74HC4316ADR2 SOIC−16 2500 / Reel

†For information on tape and reel specifications,


*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specifications
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2004 246 Publication Order Number:


May, 2004 − Rev. 3 MC74HC4316A/D
MC74HC4316A

XA 1 16 VCC FUNCTION TABLE


YA 2 15 A ON/OFF
CONTROL Inputs
State of Analog
YB 3 14 D ON/OFF Enable On/Off Control Switch
CONTROL
XB 4 13 XD L H On
B ON/OFF L L Off
CONTROL 5 12 YD
H X Off
C ON/OFF 6 11 YC
CONTROL X = Don’t Care.
ENABLE 7 10 XC
GND 8 9 VEE

Figure 1. Pin Assignment

1 ANALOG 2
XA YA
SWITCH
15
A ON/OFF CONTROL LEVEL
TRANSLATOR
4 ANALOG 3
XB YB
SWITCH
5 ANALOG
B ON/OFF CONTROL LEVEL
TRANSLATOR OUTPUTS/INPUTS
10 ANALOG 11
XC YC PIN 16 = VCC
SWITCH
6 PIN 8 = GND
C ON/OFF CONTROL LEVEL PIN 9 = VEE
TRANSLATOR GND ≥ VEE
13 ANALOG 12
XD YD
SWITCH
14
D ON/OFF CONTROL LEVEL
7 TRANSLATOR
ENABLE

ANALOG INPUTS/OUTPUTS = XA, XB, XC, XD


Figure 2. Logic Diagram

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247
MC74HC4316A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎ Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
VCC Positive DC Supply Voltage (Ref. to GND) – 0.5 to + 7.0 V circuitry to guard against damage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
(Ref. to VEE) – 0.5 to + 14.0 due to high static voltages or electric
fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
VEE Negative DC Supply Voltage (Ref. to GND) – 7.0 to + 0.5 V be taken to avoid applications of any

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
voltage higher than maximum rated
VIS Analog Input Voltage VEE – 0.5 V
to VCC + 0.5 voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
cuit. For proper operation, Vin and

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Vin DC Input Voltage (Ref. to GND) – 0.5 to VCC + 0.5 V Vout should be constrained to the
range GND  (Vin or Vout)  VCC.
± 25

ÎÎÎÎ
I

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Into or Out of Any Pin

ÎÎÎÎÎÎ
ÎÎ
mA
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP* 750 mW

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎ
ÎÎÎÎÎÎ
EIAJ/SOIC Package*
TSSOP Package*
500
450
level (e.g., either GND or VCC).
Unused outputs must be left open.
I/O pins must be connected to a

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Tstg Storage Temperature – 65 to + 150 °C
properly terminated line or bus.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds °C
(Plastic DIP, SOIC or TSSOP Package) 260

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
applied to the device are individual stress limit values (not normal operating conditions) and are

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Derating − Plastic DIP: – 10 mW/°C from 65° to 125°C
EIAJ/SOIC Package: – 7 mW/°C from 65° to 125°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TSSOP Package: − 6.1 mW/°C from 65° to 125°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Parameter
Positive DC Supply Voltage (Ref. to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VEE
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIS ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Negative DC Supply Voltage (Ref. to GND)

ÎÎÎÎÎ
ÎÎÎÎ
Analog Input Voltage
– 6.0
VEE
GND
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Vin
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIO* ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Digital Input Voltage (Ref. to GND)

ÎÎÎÎÎ
ÎÎÎÎ
Static or Dynamic Voltage Across Switch
GND

VCC
1.2
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Operating Temperature, All Package Types

ÎÎÎÎÎ
ÎÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
°C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
(Control or Enable Inputs) VCC = 3.0 V 0 600
(Figure 10) VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
VCC = 6.0 V 0 400
*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may
contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.

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248
MC74HC4316A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND Except Where Noted

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25°C  85°C  125°C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Voltage, Ron = Per Spec 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Control or Enable Inputs 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Voltage, Ron = Per Spec 2.0 0.5 0.5 0.5 V
Control or Enable Inputs 3.0 0.9 0.9 0.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 1.8 1.8 1.8
± 0.1 ± 1.0 ± 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0
Current, Control or Enable VEE = – 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Inputs

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND A
Current (per Package) VIO = 0 V VEE = GND 6.0 2 20 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VEE = – 6.0 6.0 4 40 160
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to VEE)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
VEE
V
– 55 to
25°C  85°C  125°C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Ron

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum “ON” Resistance

ÎÎÎÎ
ÎÎÎ
Vin = VIH
VIS = VCC to VEE
IS  2.0 mA (Figures 1, 2)
2.0*
45
4.5
0.0
0.0
− 4.5

160
90

200
110

240
130


ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 − 6.0 90 110 130

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH 2.0 0.0 − − −

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIS = VCC or VEE (Endpoints) 4.5 0.0 90 115 140
IS  2.0 mA (Figures 1, 2) 4.5 − 4.5 70 90 105

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 − 6.0 70 90 105

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Ron Maximum Difference in “ON” Vin = VIH 2.0 0.0 − − − 

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Resistance Between Any Two VIS = 1/2 (VCC − VEE) 4.5 0.0 20 25 30
Channels in the Same Package IS  2.0 mA 4.5 – 4.5 15 20 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 – 6.0 15 20 25

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Ioff Maximum Off−Channel Vin = VIL 6.0 – 6.0 0.1 0.5 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current, Any One VIO = VCC or VEE
Channel Switch Off (Figure 3)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Ion

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Maximum On−Channel

ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Leakage Current, Any One
Channel
Vin = VIH
VIS = VCC or VEE
(Figure 4)
6.0 – 6.0 0.1 0.5 1.0 A

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
*At supply voltage (VCC − VEE) approaching 2.0 V the analog switch−on resistance becomes extremely non−linear. Therefore, for low−voltage
operation, it is recommended that these devices only be used to control digital signals.

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ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Control or Enable tr = tf = 6 ns, VEE = GND)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
VCC
V
– 55 to
25°C  85°C  125°C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Analog Input to Analog Output 2.0 40 50 60 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 8 and 9) 4.5 6 8 9
6.0 5 7 8

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Control or Enable to Analog Output

ÎÎÎÎ
ÎÎÎ
(Figures 10 and 11)
2.0
4.5
130
40
160
50
200
60
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 30 40 50

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZL, Maximum Propagation Delay, Control or Enable to Analog Output 2.0 140 175 250 ns
tPZH (Figures 10 and 11) 4.5 40 50 60

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 30 40 50

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
C Maximum Capacitance ON/OFF Control − 10 10 10 pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
and Enable Inputs

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Control Input = GND
Analog I/O − 35 35 35

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Feedthrough − 1.0 1.0 1.0
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Switch) (Figure 13)* 15 pF


*Used to determine the no−load dynamic power consumption: PD = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ADDITIONAL APPLICATION CHARACTERISTICS (GND = 0 V)

ÎÎÎÎ ÎÎÎ
ÎÎÎ
VCC VEE Limit*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V V 25°C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
BW Maximum On–Channel Bandwidth or fin = 1 MHz Sine Wave 2.25 – 2.25 150 MHz
Minimum Frequency Response Adjust fin Voltage to Obtain 0 dBm at VOS 4.50 – 4.50 160

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(Figure 5) Increase fin Frequency Until dB Meter 6.00 – 6.00 160

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Reads – 3 dB RL = 50 , CL = 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
− Off–Channel Feedthrough Isolation fin  Sine Wave 2.25 – 2.25 – 50 dB
(Figure 6) Adjust fin Voltage to Obtain 0 dBm at VIS 4.50 – 4.50 – 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
fin = 10 kHz, RL = 600 , CL = 50 pF 6.00 – 6.00 – 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
fin = 1.0 MHz, RL = 50 , CL = 10 pF 2.25 – 2.25 – 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.50 – 4.50 – 40
6.00 – 6.00 – 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Switch ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
Feedthrough Noise, Control to

ÎÎÎ
ÎÎÎ
Vin  1 MHz Square Wave (tr = tf = 6 ns)
Adjust RL at Setup so that IS = 0 A
RL = 600 , CL = 50 pF
2.25
4.50
– 2.25
– 4.50
60
130
mVPP

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(Figure 7) 6.00 – 6.00 200

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
RL = 10 k, CL = 10 pF 2.25 – 2.25 30
4.50 – 4.50 65

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
6.00 – 6.00 100

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
− Crosstalk Between Any Two fin  Sine Wave 2.25 – 2.25 – 70 dB

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Switches Adjust fin Voltage to Obtain 0 dBm at VIS 4.50 – 4.50 – 70
(Figure 12) fin = 10 kHz, RL = 600 , CL = 50 pF 6.00 – 6.00 – 70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
fin = 1.0 MHz, RL = 50 , CL = 10 pF 2.25
4.50
– 2.25
– 4.50
– 80
– 80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
6.00 – 6.00 – 80

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
THD Total Harmonic Distortion fin = 1 kHz, RL = 10 k, CL = 50 pF %
(Figure 14) THD = THDMeasured − THDSource

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VIS = 4.0 VPP sine wave 2.25 – 2.25 0.10
VIS = 8.0 VPP sine wave 4.50 – 4.50 0.06

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
*Limits not tested. Determined by design and verified by qualification.
VIS = 11.0 VPP sine wave 6.00 – 6.00 0.04

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MC74HC4316A

TBD TBD

Figure 1a. Typical On Resistance, Figure 1b. Typical On Resistance,


VCC − VEE = 2.0 V VCC − VEE = 4.5 V

TBD TBD

Figure 1c. Typical On Resistance, Figure 1d. Typical On Resistance,


VCC − VEE = 6.0 V VCC − VEE = 9.0 V

PLOTTER

PROGRAMMABLE
POWER MINI COMPUTER DC ANALYZER
SUPPLY
TBD
− + VCC
DEVICE
UNDER TEST

ANALOG IN COMMON OUT

GND VEE

Figure 1e. Typical On Resistance, Figure 2. On Resistance Test Set−Up


VCC − VEE = 12.0 V

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MC74HC4316A

VCC

VCC VCC
VEE 16 VCC 16
A ON N/C
VCC A OFF
O/I
VEE
VIL VIH
7 SELECTED 7 SELECTED
8 CONTROL 8 CONTROL
9 INPUT 9 INPUT
VEE VEE

Figure 3. Maximum Off Channel Leakage Current, Figure 4. Maximum On Channel Leakage Current,
Any One Channel, Test Set−Up Test Set−Up

VIS
VCC VCC VCC
16 RL 16
TO dB TO dB
fin ON fin OFF
METER METER
0.1 F RL CL* 0.1 F RL RL CL*

VCC
7 7
SELECTED SELECTED
8 8
CONTROL CONTROL
9 9
INPUT INPUT
VEE VEE

*Includes all probe and jig capacitance. *Includes all probe and jig capacitance.

Figure 5. Maximum On−Channel Bandwidth Figure 6. Off−Channel Feedthrough Isolation,


Test Set−Up Test Set−Up

VCC
16

TEST
ON/OFF POINT VCC
RL
RL CL*
7 50%
8 ANALOG IN
9 SELECTED GND
CONTROL tPLH tPHL
VEE INPUT

CONTROL 50%
ANALOG OUT
*Includes all probe and jig capacitance.

Figure 7. Feedthrough Noise, Control to Analog Out, Figure 8. Propagation Delays, Analog In to
Test Set−Up Analog Out

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MC74HC4316A

VCC
16 tr tf
ANALOG I/O ANALOG O/I TEST ENABLE VCC
ON POINT 50%
50 pF* CONTROL GND
tPZL tPLZ
HIGH
7 SELECTED VCC IMPEDANCE
8 50%
CONTROL 10% VOL
9 ANALOG
INPUT tPZH tPHZ
OUT 90% VOH
50%
HIGH
*Includes all probe and jig capacitance. IMPEDANCE

Figure 9. Propagation Delay Test Set−Up Figure 10. Propagation Delay, ON/OFF Control
to Analog Out

VIS
1
POSITIONWHEN TESTING tPHZ AND tPZH
1 2
POSITIONWHEN TESTING tPLZ AND tPZL
VCC
RL
2 fin 16
VCC RL
VCC 1 k 0.1 F ON
16
1 CL*
TEST ANALOG I/O
ON/OFF POINT
2
50 pF* TEST
OFF POINT
CONTROL RL CL*
OR 7
8 VCC
ENABLE
9 SELECTED
8 CONTROL
9 VEE INPUT

*Includes all probe and jig capacitance. *Includes all probe and jig capacitance.

Figure 11. Propagation Delay Test Set−Up Figure 12. Crosstalk Between Any Two Switches,
Test Set−Up (Adjacent Channels Used)

VCC

A
VIS
16 VCC VOS
10 F 16
TO
N/C ON/OFF N/C fin ON DISTORTION
RL CL* METER

7
8 SELECTED
7
9 CONTROL SELECTED
8 VCC
INPUT CONTROL
VEE 9
INPUT
VEE
CONTROL

*Includes all probe and jig capacitance.

Figure 13. Power Dissipation Capacitance Figure 14. Total Harmonic Distortion, Test Set−Up
Test Set−Up

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MC74HC4316A

APPLICATIONS INFORMATION
0
−10 FUNDAMENTAL FREQUENCY
−20
−30
−40

dBm
−50
DEVICE
−60
SOURCE
−70
−80
−90
− 100
1.0 2.0 3.0
FREQUENCY (kHz)

Figure 15. Plot, Harmonic Distortion

The Enable and Control pins should be at VCC or GND Therefore, using the configuration in Figure 16, a maximum
logic levels, VCC being recognized as logic high and GND analog signal of twelve volts peak−to−peak can be
being recognized as a logic low. Unused analog controlled.
inputs/outputs may be left floating (not connected). When voltage transients above VCC and/or below VEE are
However, it is advisable to tie unused analog inputs and anticipated on the analog channels, external diodes (Dx) are
outputs to VCC or VEE through a low value resistor. This recommended as shown in Figure 17. These diodes should
minimizes crosstalk and feedthrough noise that may be be small signal, fast turn−on types able to absorb the
picked up by the unused I/O pins. maximum anticipated current surges during clipping. An
The maximum analog voltage swings are determined by alternate method would be to replace the Dx diodes with
the supply voltages VCC and VEE. The positive peak analog MOSORBs (MOSORB is an acronym for high current
voltage should not exceed VCC. Similarly, the negative peak surge protectors). MOSORBs are fast turn−on devices
analog voltage should not go below VEE. In the example ideally suited for precise dc protection with no inherent wear
below, the difference between VCC and VEE is 12 V. out mechanism.

VCC VCC
VCC = 6 V
16 Dx 16 Dx
+6V +6V
ANALOG I/O ANALOG O/I
ON ON
−6 V −6 V VCC
Dx SELECTED Dx
+6V SELECTED CONTROL VEE
CONTROL INPUT
VEE
INPUT
ENABLE CONTROL VEE ENABLE CONTROL
VEE INPUTS INPUTS
8 (VCC OR GND) (VCC OR GND)
−6 V

Figure 16. Figure 17. Transient Suppressor Application

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255
MC74HC4316A

VCC = 5 V +5 V

ANALOG 16 ANALOG ANALOG 16 ANALOG


SIGNALS SIGNALS SIGNALS SIGNALS
R* R* R* R* R*
HC4316A HCT HC4016A
VEE = 0 VEE = 0
BUFFER
TO −6 V TO −6 V
7 5
TTL ENABLE LSTTL/
5 AND NMOS 6 CONTROL
6 CONTROL 9 14 INPUTS 9
14 INPUTS
15 15
8 7
R* = 2 TO 10 k

a. Using Pull−Up Resistors b. Using HCT Buffer

Figure 18. LSTTL/NMOS to HCMOS Interface

VCC = 12 V
12 V R1
POWER GND = 6 V
SUPPLY
R2
VEE = 0 V

R1 = R2
VCC
ANALOG ANALOG
INPUT R3 OUTPUT
SIGNAL 1 OF 4 SIGNAL 12 V
12 VPP
SWITCHES 0
C R4
R1 = R2
R3 = R4
VEE

Figure 19. Switching a 0−to−12 V Signal Using a


Single Power Supply (GND ≠ 0 V)

1 OF 4
CHANNEL 4
SWITCHES

1 OF 4
CHANNEL 3
SWITCHES
COMMON I/O
1 OF 4
CHANNEL 2
SWITCHES


1 OF 4 OUTPUT
CHANNEL 1 1 OF 4
SWITCHES INPUT + LF356 OR
SWITCHES
EQUIVALENT
0.01 F
1 2 3 4
CONTROL INPUTS

Figure 20. 4−Input Multiplexer Figure 21. Sample/Hold Amplifier

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256
MC74HC4538A

Dual Precision Monostable


Multivibrator (Retriggerable,
Resettable)
The MC74HC4538A is identical in pinout to the MC14538B. The
device inputs are compatible with standard CMOS outputs; with http://onsemi.com
pullup resistors, they are compatible with LSTTL outputs.
This dual monostable multivibrator may be triggered by either the MARKING
positive or the negative edge of an input pulse, and produces a DIAGRAMS
precision output pulse over a wide range of pulse widths. Because the
device has conditioned trigger inputs, there are no trigger−input rise 16
16
and fall time restrictions. The output pulse width is determined by the MC74HC4538AN
1
external timing components, Rx and Cx. The device has a reset AWLYYWW
function which forces the Q output low and the Q output high, PDIP−16
N SUFFIX 1
regardless of the state of the output pulse circuitry.
CASE 648
• Unlimited Rise and Fall Times Allowed on the Trigger Inputs
• Output Pulse is Independent of the Trigger Pulse Width
• ± 10% Guaranteed Pulse Width Variation from Part to Part (Using
the Same Test Jig) 16
16
• Output Drive Capability: 10 LSTTL Loads 1 HC4538A
• Outputs Directly Interface to CMOS, NMOS and TTL SO−16
AWLYWW

• Operating Voltage Range: 3.0 to 6.0 V D SUFFIX 1


• Low Input Current: 1.0 µA CASE 751B

• High Noise Immunity Characteristic of CMOS Devices


• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A 16

16
Chip Complexity: 145 FETs or 36 Equivalent Gates HC
1
4538A
TSSOP−16 ALYW
GND 1 16 VCC DT SUFFIX
CASE 948F 1
CX1/RX1 2 15 GND
RESET 1 3 14 CX2/RX2
A1 4 13 RESET 2 A = Assembly Location
B1 5 12 A2 L, WL = Wafer Lot
Y, YY = Year
Q1 6 11 B2
W, WW = Work Week
Q1 7 10 Q2
GND 8 9 Q2

Figure 3. Pin Assignment ORDERING INFORMATION


Device Package Shipping
MC74HC4538AN PDIP−16 2000/Box
MC74HC4538AD SOIC−16 48/Rail
MC74HC4538ADR2 SOIC−16 2500/Reel
MC74HC4538ADT TSSOP−16 96/Rail
MC74HC4538ADTR2 TSSOP−16 2500/Reel

 Semiconductor Components Industries, LLC, 2001 257 Publication Order Number:


April, 2001 − Rev. 8 MC74HC4538A/D
MC74HC4538A

CX1 RX1
VCC

1 2

4 6
TRIGGER A1 Q1
INPUTS 5 7
B1 Q1

3
RESET 1
CX2 RX2
VCC

15 14

12 10
TRIGGER A2 Q2
INPUTS 11 9
B2 Q2

13
PIN 16 = VCC RESET 2
PIN 8 = GND
RX AND CX ARE EXTERNAL COMPONENTS
PIN 1 AND PIN 15 MUST BE HARD WIRED TO GND

Figure 4. Logic Diagram

FUNCTION TABLE
Inputs Outputs
Reset A B Q Q
H H
H L
H X L Not Triggered
H H X Not Triggered
H L,H, H Not Triggered
H L L,H, Not Triggered
L X X L H
X X Not Triggered

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MC74HC4538A

MAXIMUM RATINGS (Note 3)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VI DC Input Voltage 0.5  VI  VCC 0.5 V
VO DC Output Voltage (Note 4) 0.5  VO  VCC 0.5 V
IIK DC Input Diode Current A, B, Reset 20 mA
CX, RX 30

IOK DC Output Diode Current 25 mA


IO DC Output Sink Current 25 mA
ICC DC Supply Current per Supply Pin 100 mA
IGND DC Ground Current per Ground Pin 100 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction temperature under Bias 150 C
JA Thermal resistance PDIP 78 C/W
SOIC 112
TSSOP 148
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 5) >2000 V
Machine Model (Note 6) >100
Charged Device Model (Note 7) >500
ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 8) 300 mA

3. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
4. IO absolute maximum rating must be observed.
5. Tested to EIA/JESD22−A114−A.
6. Tested to EIA/JESD22−A115−A.
7. Tested to JESD22−C101−A.
8. Tested to EIA/JESD78.
9. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 3.0* 6.0 V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TA Operating Temperature, All Package Types –55 +125 C
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns
(Figure 7) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400
A or B (Figure 5) − No Limit
Rx External Timing Resistor VCC < 4.5 V 1.0 † k
VCC ≥ 4.5 V 2.0 †

Cx External Timing Capacitor 0 † F

*The HC4538A will function at 2.0 V but for optimum pulse−width stability, VCC should be above 3.0 V.
†The maximum allowable values of Rx and Cx are a function of the leakage of capacitor Cx, the leakage of the HC4538A, and leakage due to board layout
and surface resistance. For most applications, Cx/Rx should be limited to a maximum value of 10 F/1.0 M. Values of Cx > 1.0 F may cause a
problem during power down (see Power Down Considerations). Susceptibility to externally induced noise signals may occur for Rx > 1.0 M.
10. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
11. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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259
MC74HC4538A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC CHARACTERISTICS

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limits

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
–55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Test Conditions Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VIH Minimum High−Level Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Input Voltage |Iout|  20 µA 4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎ
VIL

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
Input Voltage ÎÎÎ
Maximum Low−Level

ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Vout = 0.1 V or VCC – 0.1 V

ÎÎ
|Iout|  20 µA
2.0
4.5
0.5
1.35
0.5
1.35
0.5
1.35
V

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VOH Minimum High−Level Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Output Voltage |Iout|  20 µA 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Vin = VIH or VIL
|Iout|  − 4.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 3.98 3.84 3.7
|Iout|  − 5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level

ÎÎÎ
Output Voltage ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Vin = VIH or VIL

ÎÎ
|Iout|  20 µA
2.0
4.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
|Iout|  5.2 mA 6.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Iin Maximum Input Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Leakage Current
(A, B, Reset)

ÎÎÎÎ
ÎÎÎÎÎÎÎ
Iin

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input

ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Leakage Current ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Vin = VCC or GND

ÎÎ
6.0 ± 50 ± 500 ± 500 nA

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
(Rx, Cx)
µA

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ICC Maximum Quiescent Vin = VCC or GND 6.0 130 220 350
Supply Current Q1 and Q2 = Low

ÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
(per package) Iout = 0 µA
Standby State

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ICC
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Maximum Supply
Current
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎ
Vin = VCC or GND
Q1 and Q2 = High 25C –45C to 85C –55C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
(per package) Iout = 0 µA
Active State Pins 2 and 14 = 0.5 VCC 6.0 400 600 800 µA

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260
MC74HC4538A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
Guaranteed Limits

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Î ÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
–55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tPLH Maximum Propagation Delay 2.0 175 220 265 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Input A or B to Q 4.5 35 44 53
(Figures 6 and 8) 6.0 30 37 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Input A or B to NQ

ÎÎÎÎÎ
Maximum Propagation Delay

ÎÎ
2.0
4.5
195
39
245
49
295
59
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
(Figures 6 and 8) 6.0 33 42 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tPHL Maximum Propagation Delay 2.0 175 220 265 ns
Reset to Q 4.5 35 44 53

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
(Figures 7 and 8) 6.0 30 37 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tPLH Maximum Propagation Delay 2.0 175 220 265 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Reset to NQ 4.5 35 44 53
(Figures 7 and 8) 6.0 30 37 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎ
(Figures 7 and 8)

ÎÎÎÎÎ
2.0
4.5
75
15
95
19
110
22
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Cin Maximum Input Capacitance (A. B, Reset) — 10 10 10 pF
(Cx, Rx) 25 25 25

12. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (per Multivibrator)* 150 pF

*Used to determine the no−load dynamic power consumption: P D = CPD VCC 2 f + ICC VCC . For load considerations, see the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING CHARACTERISTICS (Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limits

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
–55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
trec Minimum Recovery Time, Inactive to A or B 2.0 0 0 0 ns
(Figure 7) 4.5 0 0 0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 0 0 0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(Figure 6)
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Minimum Pulse Width, Input A or B

ÎÎ
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(Figure 7) ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
Minimum Pulse Width, Reset

ÎÎÎ
ÎÎÎÎÎ
2.0
4.5
60
12
75
15
90
18
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times, Reset 2.0 1000 1000 1000 ns
(Figure 7) 4.5 500 500 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 400 400 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
A or B 2.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 7) 4.5 No Limit
6.0

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261
MC74HC4538A

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OUTPUT PULSE WIDTH CHARACTERISTICS (CL = 50 pF)t

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Conditions Guaranteed Limits

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–55 to 25C  85C  125C
VCC

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Symbol Parameter Timing Components Volts Min Max Min Max Min Max Unit

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τ Output Pulse Width* Rx = 10 kΩ, Cx = 0.1 µF 5.0 0.63 0.77 0.6 0.8 0.59 0.81 ms

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(Figures 6 and 8)

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— Pulse Width Match — — ± 5.0 %
Between Circuits in the

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same Package

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— Pulse Width Match — — ± 10 %

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Variation (Part to Part)

*For output pulse widths greater than 100 µs, typically τ = kRxCx, where the value of k may be found in Figure 5.

0.8 10 s
k, OUTPUT PULSE WIDTH CONSTANT

TA = 25°C
1s VCC = 5 V, TA = 25°C

OUTPUT PULSE WIDTH (τ)


0.7
100 ms

0.6 10 ms
(TYPICAL)

1 ms
0.5 100 µs 1 MΩ

10 µs 100 kΩ
0.4
1 µs 10 kΩ

0.3 100 ns 1 kΩ
1 2 3 4 5 6 7 0.00001 0.0001 0.001 0.01 0.1 1 10 100
VCC, POWER SUPPLY VOLTAGE (VOLTS) CAPACITANCE (µF)

Figure 5. Typical Output Pulse Width Constant, Figure 6. Output Pulse Width versus Timing Capacitance
k, versus Supply Voltage
(For output pulse widths > 100 µs: τ = kRxCx)

1.1
Rx = 100 kΩ TA = 25°C
(NORMALIZED TO 5 V NUMBER)

Cx = 1000 pF
1
OUTPUT PULSE WIDTH (τ)

0.9

0.8
Rx = 1 MΩ
0.7 Cx = 0.1 µF

0.6

0.5
1 2 3 4 5 6 7
VCC, POWER SUPPLY VOLTAGE (VOLTS)

Figure 7. Normalized Output Pulse Width versus Power Supply Voltage

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MC74HC4538A

1.1

(NORMALIZED TO 25C NUMBER)


1.05

OUTPUT PULSE WIDTH (τ)


1
VCC = 6 V Rx = 10 kΩ
0.95 Cx = 0.1 µF

0.9

0.85
VCC = 3 V
0.8
−75 −50 −25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)

Figure 8. Normalized Output Pulse Width versus Power Supply Voltage

1.03
(NORMALIZED TO 25C NUMBER)
OUTPUT PULSE WIDTH (τ)

1.02 Rx = 10 kΩ
Cx = 0.1 µF
1.01

VCC = 5.5 V
0.99

0.98 VCC = 5 V
VCC = 4.5 V
0.97
−75 −50 −25 0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)

Figure 9. Normalized Output Pulse Width versus Power Supply Voltage

tw(H)
VCC
50%
A GND

tw(L)

B VCC
50%
GND

tPLH τ tPLH τ

50%
Q

tPHL τ tPHL τ
Q
50%

Figure 10. Switching Waveform

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MC74HC4538A

tr tf
VCC
90%
A 10% GND

trr
VCC
50%
B GND

tf tf
VCC
90%
RESET 50%
10% GND
tw(L) trec
tTLH τ + trr
tPHL
90% (RETRIGGERED PULSE)
50% 50%
Q 10%

tTHL tPLH
Q
90%
50%
10%

Figure 11. Switching Waveform

TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 12. Test Circuit

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MC74HC4538A

PIN DESCRIPTIONS

INPUTS capacitors (see the Block Diagram). Polystyrene capacitors


are recommended for optimum pulse width control.
A1, A2 (Pins 4, 12)
Electrolytic capacitors are not recommended due to high
Positive−edge trigger inputs. A rising−edge signal on leakages associated with these type capacitors.
either of these pins triggers the corresponding multivibrator
when there is a high level on the B1 or B2 input. GND (Pins 1 and 15)
External ground. The external timing capacitors discharge
B1, B2 (Pins 5, 11)
to ground through these pins.
Negative−edge trigger inputs. A falling−edge signal on
either of these pins triggers the corresponding multivibrator OUTPUTS
when there is a low level on the A1 or A2 input.
Q1, Q2 (Pins 6, 10)
Reset 1, Reset 2 (Pins 3, 13) Noninverted monostable outputs. These pins (normally
Reset inputs (active low). When a low level is applied to low) pulse high when the multivibrator is triggered at either
one of these pins, the Q output of the corresponding the A or the B input. The width of the pulse is determined by
multivibrator is reset to a low level and the Q output is set to the external timing components, RX and CX.
a high level.
Q1, Q2 (Pins 7, 9)
CX1/RX1 and CX2/RX2 (Pins 2 and 14) Inverted monostable outputs. These pins (normally high)
External timing components. These pins are tied to the pulse low when the multivibrator is triggered at either the A
common points of the external timing resistors and or the B input. These outputs are the inverse of Q1 and Q2.

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MC74HC4538A

RxCx

UPPER
REFERENCE OUTPUT
CIRCUIT LATCH

VCC + Vre,
UPPER

M1 LOWER
VCC REFERENCE
CIRCUIT
2 kΩ −
M2 + Q
Vre,
LOWER
M3

TRIGGER
CONTROL CIRCUIT
A
C Q
TRIGGER CONTROL
CB RESET CIRCUIT
B R

RESET

POWER
ON
RESET
RESET LATCH

Figure 13. Logic Detail (1/2 the Device)

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MC74HC4538A

CIRCUIT OPERATION

Figure 12 shows the HC4538A configured in the TRIGGER OPERATION


retriggerable mode. Briefly, the device operates as follows The HC4538A is triggered by either a rising−edge signal
(refer to Figure 10): In the quiescent state, the external at input A (#7) or a falling−edge signal at input B (#8), with
timing capacitor, Cx, is charged to V CC. When a trigger the unused trigger input and the Reset input held at the
occurs, the Q output goes high and Cx discharges quickly to voltage levels shown in the Function Table. Either trigger
the lower reference voltage (Vref Lower 1/3 V CC). Cx signal will cause the output of the trigger−control circuit to
then charges, through Rx, back up to the upper reference go high (#9).
voltage (Vref Upper 2/3 V CC), at which point the The trigger−control circuit going high simultaneously
one−shot has timed out and the Q output goes low. initiates two events. First, the output latch goes low, thus
The following, more detailed description of the circuit taking the Q output of the HC4538A to a high state (#10).
operation refers to both the logic detail (Figure 9) and the Second, transistor M3 is turned on, which allows the
timing diagram (Figure 10). external timing capacitor, Cx, to rapidly discharge toward
ground (#11). (Note that the voltage across Cx appears at the
QUIESCENT STATE input of both the upper and lower reference circuit
In the quiescent state, before an input trigger appears, the comparator).
output latch is high and the reset latch is high (#1 in When Cx discharges to the reference voltage of the lower
Figure 10). Thus the Q output (pin 6 or 10) of the monostable reference circuit (#12), the outputs of both reference circuits
multivibrator is low (#2, Figure 10). will be high (#13). The trigger−control reset circuit goes high,
The output of the trigger−control circuit is low (#3), and resetting the trigger−control circuit flip−flop to a low state
transistors M1, M2, and M3 are turned off. The external (#14). This turns transistor M3 off again, allowing Cx to begin
timing capacitor, Cx, is charged to VCC (#4), and both the to charge back up toward VCC, with a time constant t = RxCx
upper and lower reference circuit has a low output (#5). (#15). Once the voltage across Cx charges to above the lower
In addition, the output of the trigger−control reset circuit reference voltage, the lower reference circuit will go low
is low. allowing the monostable multivibrator to be retriggered.
QUIESCENT TRIGGER CYCLE TRIGGER CYCLE
STATE (A INPUT) (B INPUT) RESET RETRIGGER

7
trr
TRIGGER INPUT A
(PIN 4 OR 12)

TRIGGER INPUT B
(PIN 5 OR 11) 8
24
9
TRIGGER-CONTROL 3 14
CIRCUIT OUTPUT
4 11 21 23
15 17
RX/CX INPUT
12
(PIN 2 OR 14)
Vref UPPER 25
Vref LOWER 13

5 18
UPPER REFERENCE
CIRCUIT 13

LOWER REFERENCE 6 16
CIRCUIT
RESET INPUT
20
(PIN 3 OR 13)
1
RESET LATCH
22

10

2 19
Q OUTPUT
(PIN 6 OR 10)
τ τ τ + trr

Figure 14. Timing Diagram

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MC74HC4538A

When Cx charges up to the reference voltage of the upper occurs, the output of the reset latch goes low (#22), turning
reference circuit (#17), the output of the upper reference on transistor M1. Thus Cx is allowed to quickly charge up to
circuit goes low (#18). This causes the output latch to toggle, VCC (#23) to await the next trigger signal.
taking the Q output of the HC4538A to a low state (#19), and On power up of the HC4538A the power−on reset circuit
completing the time−out cycle. will be high causing a reset condition. This will prevent the
trigger−control circuit from accepting a trigger input during
POWER−DOWN CONSIDERATIONS this state. The HC4538A’s Q outputs are low and the Q not
Large values of Cx may cause problems when powering outputs are high.
down the HC4538A because of the amount of energy stored
in the capacitor. When a system containing this device is RETRIGGER OPERATION
powered down, the capacitor may discharge from VCC When used in the retriggerable mode (Figure 12), the
through the input protection diodes at pin 2 or pin 14. HC4538A may be retriggered during timing out of the
Current through the protection diodes must be limited to 30 output pulse at any time after the trigger−control circuit
mA; therefore, the turn−off time of the VCC power supply flip−flop has been reset (#24), and the voltage across Cx is
must not be faster than t = VCCC x /(30 mA). For example, above the lower reference voltage. As long as the Cx voltage
if VCC = 5.0 V and Cx = 15 µF, the VCC supply must turn off is below the lower reference voltage, the reset of the
no faster than t = (5.0 V)(15 µF)/30 mA = 2.5 ms. This is flip−flop is high, disabling any trigger pulse. This prevents
usually not a problem because power supplies are heavily M3 from turning on during this period resulting in an output
filtered and cannot discharge at this rate. pulse width that is predictable.
When a more rapid decrease of VCC to zero volts occurs, The amount of undershoot voltage on RxCx during the
the HC4538A may sustain damage. To avoid this possibility, trigger mode is a function of loop delay, M3 conductivity,
use an external damping diode, Dx, connected as shown in and V DD. Minimum retrigger time, trr (Figure 7), is a
Figure 11. Best results can be achieved if diode Dx is chosen function of 1) time to discharge R x C x from V DD to lower
to be a germanium or Schottky type diode able to withstand reference voltage (T discharge); 2) loop delay (T delay); 3)
large current surges. time to charge Rx C x from the undershoot voltage back to the
lower reference voltage (Tcharge).
RESET AND POWER ON RESET OPERATION Figure 13 shows the device configured in the
A low voltage applied to the Reset pin always forces the non−retriggerable mode.
Q output of the HC4538A to a low state. For additional information, please see Application Note
The timing diagram illustrates the case in which reset (AN1558/D) titled Characterization of Retrigger Time in
occurs (#20) while Cx is charging up toward the reference the HC4538A Dual Precision Monostable Multivibrator.
voltage of the upper reference circuit (#21). When a reset

DX

CX VCC

RX

Q
A
B Q

RESET

Figure 15. Discharge Protection During Power Down

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MC74HC4538A

TYPICAL APPLICATIONS

CX RX CX RX

RISING−EDGE RISING−EDGE
TRIGGER TRIGGER VCC
VCC

Q Q
A A
B Q
B Q

B = VCC

RESET = VCC RESET = VCC

CX RX CX RX
FALLING−EDGE
VCC TRIGGER VCC
A = GND
Q
Q
A
B Q B Q
FALLING−EDGE
TRIGGER
RESET = VCC RESET = VCC

Figure 16. Retriggerable Monostable Circuitry Figure 17. Non−retriggerable Monostable Circuitry

GND N/C
A = GND
RXCX
Q N/C
VCC
B
Q N/C
RESET

Figure 18. Connection of Unused Section

ONE−SHOT SELECTION GUIDE

100 ns 1 µs 10 µs 100 µs 1 ms 10 ms 100 ms 1 s 10 s


MC14528B
MC14536B 23 HR
MC14538B
MC14541B 5 MIN
HC4538A*

*Limited operating voltage (2 −6 V)

TOTAL OUTPUT PULSE WIDTH RANGE


RECOMMENDED PULSE WIDTH RANGE

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269
MC74HC4851A,
MC74HC4852A

Analog Multiplexers/
Demultiplexers with
Injection Current Effect
Control http://onsemi.com

Automotive Customized MARKING


DIAGRAMS
These devices are pin compatible to standard HC405x and 16
MC1405xB analog mux/demux devices, but feature injection current PDIP−16
effect control. This makes them especially suited for usage in N SUFFIX HC485xAN
AWLYYWW
automotive applications where voltages in excess of normal logic CASE 648
voltage are common. 1
The injection current effect control allows signals at disabled analog 16
input channels to exceed the supply voltage range without affecting SOIC−16
HC485xAD
the signal of the enabled analog channel. This eliminates the need for D SUFFIX AWLYWW
external diode/ resistor networks typically used to keep the analog CASE 751B
channel signals within the supply voltage range. 1
The devices utilize low power silicon gate CMOS technology. The 16
Channel Select and Enable inputs are compatible with standard CMOS SOIC−16 WIDE
HC485xADW
outputs. DW SUFFIX AWLYWW
• Injection Current Cross−Coupling Less than 1mV/mA (See Figure 9) CASE 751G

• Pin Compatible to HC405X and MC1405XB Devices 1

• Power Supply Range (VCC − GND) = 2.0 to 6.0 V 16

• In Compliance With the Requirements of JEDEC Standard No. 7A TSSOP−16 HC48


DT SUFFIX
• Chip Complexity: 154 FETs or 36 Equivalent Gates CASE 948F
5xA
ALYW

1
A = Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 279 of this data sheet.

 Semiconductor Components Industries, LLC, 2002 270 Publication Order Number:


June, 2002 − Rev. 5 MC74HC4851A/D
MC74HC4851A, MC74HC4852A

FUNCTION TABLE − MC74HC4851A


Control Inputs
Select
13
X0 Enable C B A ON Channels
14
X1 L L L L X0
15
X2 L L L H X1
ANALOG 12
INPUTS/ X3 MULTIPLEXER/ 3 COMMON L L H L X2
OUTPUTS X4 1 DEMULTIPLEXER X L L H H X3
OUTPUT/
5 INPUT L H L L X4
X5 L H L H X5
2
X6 L H H L X6
4
X7 L H H H X7
11 H X X X NONE
A
CHANNEL 10
SELECT B
INPUTS 9
C VCC X2 X1 X0 X3 A B C
6
ENABLE 16 15 14 13 12 11 10 9
PIN 16 = VCC
PIN 8 = GND

Figure 1. MC74HC4851A Logic Diagram


Single−Pole, 8−Position Plus Common Off

1 2 3 4 5 6 7 8
X4 X6 X X7 X5 Enable NC GND
Figure 2. MC74HC4851A 16−Lead Pinout (Top View)

FUNCTION TABLE − MC74HC4852A


Control Inputs
Select
Enable B A ON Channels
12
X0 L L L Y0 X0
14
X1 13 L L H Y1 X1
15 X SWITCH X
X2 L H L Y2 X2
11 L H H Y3 X3
X3
ANALOG COMMON H X X NONE
INPUTS/OUTPUTS 1 OUTPUTS/INPUTS
Y0 X = Don’t Care
5 3
Y1 Y SWITCH Y
2
Y2
4
Y3 VCC X2 X1 X X0 X3 A B
10
CHANNEL-SELECT A 16 15 14 13 12 11 10 9
9 PIN 16 = VCC
INPUTS B
PIN 8 = GND
6
ENABLE

Figure 3. MC74HC4852A Logic Diagram


Double−Pole, 4−Position Plus Common Off
1 2 3 4 5 6 7 8
Y0 Y2 Y Y3 Y1 Enable NC GND
Figure 4. MC74HC4852A 16−Lead Pinout (Top View)

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MC74HC4851A, MC74HC4852A

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MAXIMUM RATINGS*

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Symbol
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Parameter Value Unit This device contains protection

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VCC Positive DC Supply Voltage (Referenced to GND) –0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

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Vin DC Input Voltage (Any Pin) (Referenced to GND) –0.5 to VCC + 0.5 V fields. However, precautions must

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be taken to avoid applications of any
I DC Current, Into or Out of Any Pin 25 mA
voltage higher than maximum rated

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PD Power Dissipation in Still Air, Plastic DIP† 750 mW voltages to this high−impedance cir-

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SOIC Package† 500 cuit. For proper operation, Vin and
TSSOP Package† 450 Vout should be constrained to the

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range GND  (Vin or Vout)  VCC.
Tstg Storage Temperature Range –65 to + 150 °C

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Unused inputs must always be
TL Lead Temperature, 1 mm from Case for 10 °C tied to an appropriate logic voltage

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Seconds 260 level (e.g., either GND or VCC).
Plastic DIP, SOIC or TSSOP Package Unused outputs must be left open.
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/°C from 65° to 125°C
SOIC Package: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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Symbol ÎÎÎ
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RECOMMENDED OPERATING CONDITIONS

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VCC

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Vin ÎÎÎ
ÎÎÎ ÎÎÎ
Positive DC Supply Voltage

ÎÎÎ
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DC Input Voltage (Any Pin)
(Referenced to GND)
(Referenced to GND)
2.0
GND
6.0
VCC
V
V

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VIO*

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TA ÎÎÎ
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Static or Dynamic Voltage Across Switch

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Operating Temperature Range, All Package Types
0.0
– 55
1.2
+ 125
V
°C

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tr, tf
ÎÎÎ
ÎÎÎ
ÎÎÎ
Input Rise/Fall Time

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ÎÎÎ
ÎÎÎ
ÎÎÎ
(Channel Select or Enable Inputs)
VCC = 2.0 V
VCC = 4.5 V
0
0
1000
500
ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC = 6.0 V 0 400

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*For voltage drops across switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input compo-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
nents. The reliability of the device will be unaffected unless the Maximum Ratings are ex-
ceeded.

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DC CHARACTERISTICS — Digital Section (Voltages Referenced to GND) VEE = GND, Except Where Noted
Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Ron = Per Spec 2.0 1.50 1.50 1.50 V
Voltage, Channel−Select or Enable 3.0 2.10 2.10 2.10
Inputs 4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Ron = Per Spec 2.0 0.50 0.50 0.50 V
Voltage, Channel−Select or Enable 3.0 0.90 0.90 0.90
Inputs 4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
on Digital Pins (Enable/A/B/C)
ICC Maximum Quiescent Supply Vin(digital) = VCC or GND 6.0 2 20 40 A
Current (per Package) Vin(analog) = GND
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC4851A, MC74HC4852A

DC CHARACTERISTICS — Analog Section


Guaranteed Limit

Symbol Parameter Condition VCC −55 to 25°C ≤85°C ≤125°C Unit


Ron Maximum “ON” Resistance Vin = VIL or VIH;VIS = VCC to 2.0 1700 1750 1800 
GND; IS ≤ 2.0 mA 3.0 1100 1200 1300
4.5 550 650 750
6.0 400 500 600
Ron Delta “ON” Resistance Vin = VIL or VIH; VIS = VCC/2 2.0 300 400 500 
IS ≤ 2.0 mA 3.0 160 200 240
4.5 80 100 120
6.0 60 80 100
Ioff Maximum Off−Channel Leakage Vin = VCC or GND A
Current, 6.0 ±0.1 ±0.5 ±1.0
Any One Channel ±0.2 ±2.0 ±4.0
Common Channel
Ion Maximum On−Channel Leakage Vin = VCC or GND A
Channel−to−Channel 6.0 ±0.2 ±2.0 ±4.0

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Symbol Parameter VCC −55 to 25°C ≤85°C ≤125°C Unit
tPHL, Maximum Propagation Delay, Analog Input to Analog Output 2.0 160 180 200 ns
tPLH 3.0 80 90 100
4.5 40 45 50
6.0 30 35 40
tPHL, tPHZ,PZH Maximum Propagation Delay, Enable or Channel−Select to 2.0 260 280 300 ns
tPLH, tPLZ,PZL Analog Output 3.0 160 180 200
4.5 80 90 100
6.0 60 70 80
Cin Maximum Input Capacitance Digital Pins 10 10 10 pF
(All Switches Off) Any Single Analog Pin 35 35 35
(All Switches Off) Common Analog Pin 130 130 130
CPD Power Dissipation Capacitance Typical 5.0 20 pF

INJECTION CURRENT COUPLING SPECIFICATIONS (VCC = 5V, TA = −55°C to +125°C)


Symbol Parameter Typ Max Unit Condition
Vout Maximum Shift of Output Voltage of Enabled Analog 0.1 1.0 mV Iin* ≤ 1 mA, RS ≤ 3,9 k
Channel 1.0 5.0 Iin* ≤ 10 mA, RS ≤ 3,9 k
0.5 2.0 Iin* ≤ 1 mA, RS ≤ 20 k
5.0 20 Iin* ≤ 10 mA, RS ≤ 20 k
* Iin = Total current injected into all disabled channels.

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MC74HC4851A, MC74HC4852A

1100 1100
1000 1000
900 900

R on , ON RESISTANCE (OHMS)
R on , ON RESISTANCE (OHMS)

−55°C
800 800
+25°C
700 700
+125°C
600 600
500 500
−55°C
400 400
+25°C
300 300 +125°C
200 200
100 100
0 0
0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.6 1.2 1.8 2.4 3.0

Vin, INPUT VOLTAGE (VOLTS), REFERENCED TO GND Vin, INPUT VOLTAGE (VOLTS), REFERENCED TO GND

Figure 5. Typical On Resistance VCC = 2V Figure 6. Typical On Resistance VCC = 3V

660 440
600 400
540 360
R on , ON RESISTANCE (OHMS)
R on , ON RESISTANCE (OHMS)

480 320
−55°C
420 280
+25°C
360 −55°C 240
+125°C
300 200
+25°C
240 160
+125°C
180 120
120 80
60 40
0 0
0.0 0.9 1.8 2.7 3.6 4.5 0.0 1.2 2.4 3.6 4.8 6.0

Vin, INPUT VOLTAGE (VOLTS), REFERENCED TO GND Vin, INPUT VOLTAGE (VOLTS), REFERENCED TO GND

Figure 7. Typical On Resistance VCC = 4.5V Figure 8. Typical On Resistance VCC = 6V

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274
MC74HC4851A, MC74HC4852A

VCC = 5V
Iin

Vin2 < VSS or VCC < Vin2


Any Disabled Channel

VSS < Vin1 < VCC


Enabled Channel Vout = Vin1 ±Vout
RS

Figure 9. Injection Current Coupling Specification

5V 6V
5V VCC

VCC
HC4051A Microcontroller
Sensor
Channel 1
Channel 2
Channel 3
Channel 4
Channel 5
Channel 6
Channel 7
Channel 8
(8x Identical Circuitry) Common Out A/D − Input

Figure 10. Actual Technology


Requires 32 passive components and one extra 6V regulator
to suppress injection current into a standard HC4051 multiplexer

5V VCC

VCC
HC4851A Microcontroller
Sensor
Channel 1
Channel 2
Channel 3
Channel 4
Channel 5
Channel 6
Channel 7
Channel 8
(8x Identical Circuitry) Common Out A/D − Input

Figure 11. MC74HC4851A Solution


Solution by applying the HC4851A multiplexer

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275
MC74HC4851A, MC74HC4852A

PLOTTER
VCC

PROGRAMMABLE
POWER MINI COMPUTER DC ANALYZER VCC
VEE 16
SUPPLY
OFF
− + VCC VCC A
NC OFF COMMON O/I
DEVICE
UNDER TEST
VIH 6
ANALOG IN COMMON OUT
8

GND

Figure 13. Maximum Off Channel Leakage Current,


Figure 12. On Resistance Test Any One Channel, Test Set−Up
Set−Up

VCC

VCC VCC VCC


VEE 16 A 16
ANALOG I/O
OFF ON
VCC VEE N/C
OFF OFF COMMON O/I
COMMON O/I
VCC ANALOG I/O

VIH 6 VIL 6

8 8

Figure 14. Maximum Off Channel Leakage Current, Figure 15. Maximum On Channel Leakage Current,
Common Channel, Test Set−Up Channel to Channel, Test Set−Up

VCC
VCC
16
VCC
CHANNEL ON/OFF COMMON O/I
50% TEST
SELECT ANALOG I/O
POINT
OFF/ON CL*
GND
tPLH tPHL

6
ANALOG
OUT 50%
8

CHANNEL SELECT

*Includes all probe and jig capacitance

Figure 16. Propagation Delays, Channel Select Figure 17. Propagation Delay, Test Set−Up Channel
to Analog Out Select to Analog Out

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276
MC74HC4851A, MC74HC4852A

VCC
16
ANALOG I/O COMMON O/I
VCC TEST
ON
ANALOG POINT
IN 50% CL*
GND
tPLH tPHL
6
ANALOG 8
OUT 50%

*Includes all probe and jig capacitance

Figure 18. Propagation Delays, Analog In Figure 19. Propagation Delay, Test Set−Up
to Analog Out Analog In to Analog Out

tf tr POSITION 1 WHEN TESTING tPHZ AND tPZH


VCC 1 POSITION 2 WHEN TESTING tPLZ AND tPZL
90%
ENABLE 50% 2
VCC
10%
GND VCC 10k
tPZL tPLZ 16
HIGH 1 ANALOG I/O
IMPEDANCE ON/OFF TEST
ANALOG 50% 2 POINT
OUT 10% CL*
VOL
tPZH tPHZ
ENABLE
VOH 6
90%
ANALOG
OUT 50% 8
HIGH
IMPEDANCE

Figure 20. Propagation Delays, Enable to Figure 21. Propagation Delay, Test Set−Up
Analog Out Enable to Analog Out

VCC
A
VCC
16
ON/OFF COMMON O/I
ANALOG I/O NC
OFF/ON

6 VCC

8 11

CHANNEL SELECT

Figure 22. Power Dissipation Capacitance,


Test Set−Up

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277
MC74HC4851A, MC74HC4852A

Gate = VCC
Disabled Analog Mux Input (Disabled) Common Analog Output
Vin > VCC + 0.7V Vout > VCC

P+ P+

+
+
+

N − Substrate (on VCC potential)

Figure 23. Diagram of Bipolar Coupling Mechanism


Appears if Vin exceeds VCC, driving injection current into the substrate

INJECTION 13
11 CURRENT X0
A CONTROL

INJECTION 14
CURRENT X1
CONTROL

10 INJECTION
B 15
CURRENT X2
CONTROL

INJECTION 12
CURRENT X3
CONTROL

9 INJECTION
C 1
CURRENT X4
CONTROL

INJECTION 5
CURRENT X5
CONTROL

INJECTION 2
6 CURRENT X6
ENABLE CONTROL

INJECTION 4
CURRENT X7
CONTROL

INJECTION 3
CURRENT X
CONTROL

Figure 24. Function Diagram, HC4851A

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278
MC74HC4851A, MC74HC4852A

INJECTION 13
10 CURRENT X0
A CONTROL

INJECTION 14
CURRENT X1
CONTROL

9 INJECTION 15
B
CURRENT X2
CONTROL

INJECTION 12
CURRENT X3
CONTROL

INJECTION 13
CURRENT X
CONTROL

6 INJECTION
ENABLE 1
CURRENT Y0
CONTROL

INJECTION 5
CURRENT Y1
CONTROL

INJECTION 2
CURRENT Y2
CONTROL

INJECTION 4
CURRENT Y3
CONTROL

INJECTION 3
CURRENT Y
CONTROL
Figure 25. Function Diagram, HC4852A

ORDERING & SHIPPING INFORMATION


Device Package Shipping
MC74HC4851AN PDIP−16 500 Units / Unit PAK
MC74HC4851AD SOIC−16 48 Units / Rail
MC74HC4851ADR2 SOIC−16 2500 Units / Tape & Reel
MC74HC4851ADW SOIC−16 WIDE 48 Units / Rail
MC74HC4851ADWR2 SOIC−16 WIDE 1000 Units / Tape & Reel
MC74HC4851ADT TSSOP−16 96 Units / Rail
MC74HC4851ADTR2 TSSOP−16 2500 Units / Tape & Reel
MC74HC4852AN PDIP−16 500 Units / Unit PAK
MC74HC4852AD SOIC−16 48 Units / Rail
MC74HC4852ADR2 SOIC−16 2500 Units / Tape & Reel
MC74HC4852ADW SOIC−16 WIDE 48 Units / Rail
MC74HC4852ADWR2 SOIC−16 WIDE 1000 Units / Tape & Reel
MC74HC4852ADTR2 TSSOP−16 2500 Units / Tape & Reel

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279
MC74HC540A

Octal 3−State Inverting


Buffer/Line Driver/Line
Receiver
High−Performance Silicon−Gate CMOS
The MC74HC540A is identical in pinout to the LS540. The device http://onsemi.com
inputs are compatible with Standard CMOS outputs. External pull−up
resistors make them compatible with LSTTL outputs. MARKING
The HC540A is an octal inverting buffer/line driver/line receiver DIAGRAMS
designed to be used with 3−state memory address drivers, clock
drivers, and other bus−oriented systems. This device features inputs
and outputs on opposite sides of the package and two ANDed 20
active−low output enables. MC74HC540AN
1 AWLYYWW
The HC540A is similar in function to the HC541A, which has
noninverting outputs. PDIP−20

N SUFFIX
Output Drive Capability: 15 LSTTL Loads CASE 783
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 A 20

• High Noise Immunity Characteristic of CMOS Devices 1 HC540A


AWLYYWW
• In Compliance With the JEDEC Standard No. 7A Requirements SO−20
• Chip Complexity: 124 FETs or 31 Equivalent Gates DW SUFFIX
CASE 751D
VCC OE2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
20 19 18 17 16 15 14 13 12 11

20

1
HC540A
TSSOP−20 ALYW
DT SUFFIX
1 2 3 4 5 6 7 8 9 10 CASE 948E

OE1 A1 A2 A3 A4 A5 A6 A7 A8 GND

A = Assembly Location
Figure 1. Pinout: 20−Lead Packages (Top View)
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

FUNCTION TABLE
Inputs ORDERING INFORMATION
Output Y
OE1 OE2 A Device Package Shipping
L L L H MC74HC540AN PDIP−20 1440/Box
L L H L
MC74HC540ADW SOIC−WIDE 38/Rail
H X X Z
MC74HC540ADWR2 SOIC−WIDE 1000/Reel
X H X Z
MC74HC540ADT TSSOP−20 75/Rail
Z = High Impedance
X = Don’t Care MC74HC540ADTR2 TSSOP−20 2500/Reel

 Semiconductor Components Industries, LLC, 2001 280 Publication Order Number:


June, 2001 − Rev. 8 MC74HC540A/D
MC74HC540A

2 18
A1 Y1

3 17
A2 Y2

4 16
A3 Y3

5 15
Data A4 Y4 Inverting
Inputs 6 14 Outputs
A5 Y5

7 13
A6 Y6

8 12
A7 Y7

9 11
A8 Y8

1
Output OE1
OE2 PIN 20 = VCC
Enables 19 PIN 10 = GND

Figure 2. Logic Diagram

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281
MC74HC540A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VI DC Input Voltage 0.5 to VCC 0.5 V
VO DC Output Voltage (Note 2) 0.5  VO  VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 35 mA
IO DC Output Sink Current 35 mA
ICC DC Supply Current per Supply Pin 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 67 C/W
SOIC 96
TSSOP 128
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 3) 2000 V
Machine Model (Note 4) 200
Charged Device Model (Note 5) 1000
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA
1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. IO absolute maximum rating must be observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
(Referenced to GND)
55
0 VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Input Rise and Fall Time (Figure 3)

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

7. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.

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282
MC74HC540A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Voltage Vout = 0.1 V 2.0 1.50 1.50 1.50 V
|Iout| ≤ 20 A 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input Voltage Vout = VCC − 0.1 V 2.0 0.50 0.50 0.50 V
|Iout| ≤ 20 A 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output Voltage Vin = VIL 2.0 1.9 1.9 1.9 V
|Iout| ≤ 20 A 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
Vin = VIL |Iout| ≤ 3.6 mA 3.0 2.48 2.34 2.20
|Iout| ≤ 6.0 mA 4.5 3.98 3.84 3.70
|Iout| ≤ 7.8 mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output Voltage Vin = VIH 2.0 0.1 0.1 0.1 V
|Iout| ≤ 20 A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
Vin = VIH |Iout| ≤ 3.6 mA 3.0 0.26 0.33 0.40
|Iout| ≤ 6.0 mA 4.5 0.26 0.33 0.40
|Iout| ≤ 7.8 mA 6.0 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A
IOZ Maximum Three−State Leakage Output in High Impedance State 6.0 ±0.5 ±5.0 ±10.0 A
Current Vin = VIL or VIH
Vout = VCC or GND
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 A
Current (per Package) Iout = 0 A
8. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
VCC
Symbol Parameter V −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A to Output Y 2.0 80 100 120 ns
tPHL (Figures 3 and 5) 3.0 30 40 55
4.5 18 23 28
6.0 15 20 25
tPLZ, Maximum Propagation Delay, Output Enable to Output Y 2.0 110 140 165 ns
tPHZ (Figures 4 and 6) 3.0 45 60 75
4.5 25 31 38
6.0 21 26 31
tPZL, Maximum Propagation Delay, Output Enable to Output Y 2.0 110 140 165 ns
tPZH (Figures 4 and 6) 3.0 45 60 75
4.5 25 31 38
6.0 21 26 31
tTLH, Maximum Output Transition Time, Any Output 2.0 60 75 90 ns
tTHL (Figures 3 and 5) 3.0 22 28 34
4.5 12 15 18
6.0 10 13 15
Cin Maximum Input Capacitance 10 10 10 pF
Cout Maximum Three−State Output Capacitance (Output in High Impedance State) 15 15 15 pF
9. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD Power Dissipation Capacitance (Per Buffer) (Note 10) 35 pF
10. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC540A

VCC
OE1 or OE2
tr tf 50% 50%

90% VCC GND


tPZL tPLZ
INPUT A 50% HIGH
10% OUTPUT Y IMPEDANCE
GND 50%
tPHL tPLH
10%
VOL
90%
tPZH tPHZ
50%
OUTPUT Y 90% VOH
10%
50%
tTHL tTLH OUTPUT Y HIGH
IMPEDANCE
Figure 3. Switching Waveform Figure 4. Switching Waveform

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ and tPZH.
CL* TEST CL*
TEST

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 5. Test Circuit Figure 6. Test Circuit

To 7 Other Inverters

One of Eight VCC


Inverters

INPUT A
OUTPUT Y

OE1

OE2

Figure 7. Logic Detail

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284
MC74HC540A

PIN DESCRIPTIONS

INPUTS device functions as an inverter. When a high voltage is


applied to either input, the outputs assume the high
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8, 9)
impedance state.
Data input pins. Data on these pins appear in inverted form
on the corresponding Y outputs, when the outputs are OUTPUTS
enabled.
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
CONTROLS 13, 12, 11)
Device outputs. Depending upon the state of the output
OE1, OE2 (PINS 1, 19) enable pins, these outputs are either inverting outputs or
Output enables (active−low). When a low voltage is high−impedance outputs.
applied to both of these pins, the outputs are enabled and the

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285
MC74HC541A

Octal 3−State Noninverting


Buffer/Line Driver/Line
Receiver
High−Performance Silicon−Gate CMOS
The MC74HC541A is identical in pinout to the LS541. The device http://onsemi.com
inputs are compatible with Standard CMOS outputs. External pull−up MARKING
resistors make them compatible with LSTTL outputs. DIAGRAMS
The HC541A is an octal noninverting buffer/line driver/line
receiver designed to be used with 3−state memory address drivers,
clock drivers, and other bus−oriented systems. This device features
inputs and outputs on opposite sides of the package and two ANDed
20
active−low output enables. MC74HC541AN
1
The HC541A is similar in function to the HC540A, which has AWLYYWW
inverting outputs. PDIP−20
• Output Drive Capability: 15 LSTTL Loads N SUFFIX
CASE 783
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2 to 6V
• Low Input Current: 1 A 20

• High Noise Immunity Characteristic of CMOS Devices 1 HC541A


• In Compliance With the JEDEC Standard No. 7A Requirements SO−20
AWLYYWW

• Chip Complexity: 134 FETs or 33.5 Equivalent Gates DW SUFFIX


CASE 751D

VCC OE2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
20 19 18 17 16 15 14 13 12 11

20

1
HC541A
TSSOP−20 ALYW
1 2 3 4 5 6 7 8 9 10 DT SUFFIX
OE1 A1 A2 A3 A4 A5 A6 A7 A8 GND CASE 948E

Figure 8. Pinout: 20−Lead Packages (Top View)


A = Assembly Location
L, WL = Wafer Lot
FUNCTION TABLE Y, YY = Year
W, WW = Work Week
Inputs
Output Y
OE1 OE2 A
L L L L ORDERING INFORMATION
L L H H Device Package Shipping
H X X Z
X H X Z MC74HC541AN PDIP−20 1440/Box

MC74HC541ADW SOIC−WIDE 38/Rail


X = Don’t Care
Z = High Impedance MC74HC541ADWR2 SOIC−WIDE 1000/Reel

MC74HC541ADT TSSOP−20 75/Rail

MC74HC541ADTR2 TSSOP−20 2500/Reel

 Semiconductor Components Industries, LLC, 2001 286 Publication Order Number:


May, 2001 − Rev. 3 MC74HC541A/D
MC74HC541A

2 18
A1 Y1

3 17
A2 Y2

4 16
A3 Y3

5 15
Data A4 Y4 Noninverting
Inputs 6 14 Outputs
A5 Y5

7 13
A6 Y6

8 12
A7 Y7

9 11
A8 Y8

Output OE1 1 PIN 20 = VCC


Enables OE2 PIN 10 = GND
19

Figure 9. Logic Diagram

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287
MC74HC541A

MAXIMUM RATINGS (Note 11)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VI DC Input Voltage 0.5  VI  0.5 V
VO DC Output Voltage (Note 12) 0.5  VO  0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 35 mA
IO DC Output Sink Current 35 mA
ICC DC Supply Current per Supply Pin 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature under Bias 150 C
JA Thermal Resistance PDIP 67 C/W
SOIC 96
TSSOP 128
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 13) > 4000 V
Machine Model (Note 14) > 300
Charged Device Model (Note 15) > 1000
ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 16) 300 mA

11. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
12. IO absolute maximum rating must be observed.
13. Tested to EIA/JESD22−A114−A.
14. Tested to EIA/JESD22−A115−A.
15. Tested to JESD22−C101−A.
16. Tested to EIA/JESD78.
17. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIN, VOUT

ÎÎÎÎ
TA ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature Range, All Package Types
(Referenced to GND) 0
55
VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 10)
ÎÎÎ
Input Rise/Fall Time

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

18. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.

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MC74HC541A

DC CHARACTERISTICS (Voltages Referenced to GND)


VCC Guaranteed Limit
Symbol Parameter Condition V 55C to 25C 85C 125C Unit
VIH Minimum High−Level Input VOUT = 0.1 V 2.0 1.50 1.50 1.50 V
Voltage |IOUT| ≤ 20 A 3.0 2.10 2.10 2.10
4.5 3.15 3.15 3.15
6.0 4.20 4.20 4.20
VIL Maximum Low−Level Input VOUT = VCC − 0.1 V 2.0 0.50 0.50 0.50 V
Voltage |IOUT| ≤ 20 A 3.0 0.90 0.90 0.90
4.5 1.35 1.35 1.35
6.0 1.80 1.80 1.80
VOH Minimum High−Level Output VIN = VIL 2.0 1.9 1.9 1.9 V
Voltage |IOUT| ≤ 20 A 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9
VIN = VIL |IOUT| ≤ 3.6 mA 3.0 2.48 2.34 2.20
|IOUT| ≤ 6.0 mA 4.5 3.98 3.84 3.70
|IOUT| ≤ 7.8 mA 6.0 5.48 5.34 5.20
VOL Maximum Low−Level Output VIN = VIH 2.0 0.1 0.1 0.1 V
Voltage |IOUT| ≤ 20 A 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1
VIN = VIH |IOUT| ≤ 3.6 mA 3.0 0.26 0.33 0.40
|IOUT| ≤ 6.0 mA 4.5 0.26 0.33 0.40
|IOUT| ≤ 7.8 mA 6.0 0.26 0.33 0.40
IIN Maximum Input Leakage Current VIN = VCC or GND 6.0 0.1 1.0 1.0 A
IOZ Maximum Three−State Leakage Output in High Impedance State 6.0 0.5 5.0 10.0 A
Current VIN = VIL or VIH
VOUT = VCC or GND
ICC Maximum Quiescent Supply VIN = VCC or GND 6.0 4 40 160 A
Current (per Package) IOUT = 0 A

19. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)


VCC Guaranteed Limit
Symbol Parameter V 55C to 25C 85C 125C Unit
tPLH, Maximum Propagation Delay, Input A to Output Y 2.0 80 100 120 ns
tPHL (Figures 10 and 12) 3.0 30 40 55
4.5 18 23 28
6.0 15 20 25
tPLZ, Maximum Propagation Delay, Output Enable to Output Y 2.0 110 140 165 ns
tPHZ (Figures 11 and 13) 3.0 45 60 75
4.5 25 31 38
6.0 21 26 31
tPZL, Maximum Propagation Delay, Output Enable to Output Y 2.0 110 140 165 ns
tPZH (Figures 11 and 13) 3.0 45 60 75
4.5 25 31 38
6.0 21 26 31
tTLH, Maximum Output Transition Time, Any Output 2.0 60 75 90 ns
tTHL (Figures 10 and 12) 3.0 22 28 34
4.5 12 15 18
6.0 10 13 15
CIN Maximum Input Capacitance 10 10 10 pF
COUT Maximum Three−State Output Capacitance (High Impedance State Output) 15 15 15 pF

20. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD Power Dissipation Capacitance (Per Buffer) (Note 21) 35 pF

21. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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289
MC74HC541A

tr tf
VCC
90%
INPUT A 50%
10% GND
tPLH tPHL

90%
50%
OUTPUT Y
10%

tTLH tTHL

Figure 10. Switching Waveform

VCC
OE1 or OE2 50% 50%
GND
tPZL tPLZ
HIGH
IMPEDANCE
OUTPUT Y 50%
10% VOL
tPZH tPHZ

90% VOH
OUTPUT Y
50%
HIGH
IMPEDANCE

Figure 11. Switching Waveform

TEST TEST
POINT POINT
CONNECT TO VCC WHEN
OUTPUT 1 k
OUTPUT TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ and tPZH.
CL* TEST CL*
TEST

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 12. Test Circuit Figure 13. Test Circuit

PIN DESCRIPTIONS

INPUTS device functions as an non−inverting buffer. When a high


A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8, 9) voltage is applied to either input, the outputs assume the high
Data input pins. Data on these pins appear in non−inverted impedance state.
form on the corresponding Y outputs, when the outputs are
enabled. OUTPUTS
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
CONTROLS 13, 12, 11)
OE1, OE2 (PINS 1, 19) Device outputs. Depending upon the state of the output
Output enables (active−low). When a low voltage is enable pins, these outputs are either non−inverting outputs
applied to both of these pins, the outputs are enabled and the or high−impedance outputs.

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290
MC74HC541A

To 7 Other Buffers

One of Eight VCC


Buffers

INPUT A
OUTPUT Y

OE1

OE2

Figure 14. Logic Detail

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291
MC74HC573A

Octal 3−State Noninverting


Transparent Latch
High−Performance Silicon−Gate CMOS
The MC74HC573A is identical in pinout to the LS573. The devices http://onsemi.com
are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
These latches appear transparent to data (i.e., the outputs change MARKING
asynchronously) when Latch Enable is high. When Latch Enable goes DIAGRAMS
20
low, data meeting the setup and hold time becomes latched.
PDIP−20
The HC573A is identical in function to the HC373A but has the data N SUFFIX
MC74HC573AN
inputs on the opposite side of the package from the outputs to facilitate AWLYYWW
20 CASE 738
PC board layout. 1
1
Features

20
Pb−Free Packages are Available* SOIC WIDE−20
• Output Drive Capability: 15 LSTTL Loads 20 DW SUFFIX HC573A
AWLYYWW

1 CASE 751D
Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2.0 to 6.0 V 1

• Low Input Current: 1.0 A


• In Compliance with the JEDEC Standard No. 7.0 A Requirements 20

• Chip Complexity: 218 FETs or 54.5 Equivalent Gates TSSOP−20 HC


20 DT SUFFIX 573A
1 CASE 948E ALYW

A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 294 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004 292 Publication Order Number:


December, 2004 − Rev. 10 MC74HC573A/D
MC74HC573A

OUTPUT
2 19 1 20 VCC
D0 Q0 ENABLE
3 18 D0 2 19 Q0
D1 Q1
4 17 D1 3 18 Q1
D2 Q2
DATA 5 16 NONINVERTING D2 4 17 Q2
D3 Q3
INPUTS 6 15 OUTPUTS
D4 Q4 D3 5 16 Q3
7 14
D5 Q5 D4 6 15 Q4
8 13
D6 Q6 D5 7 14 Q5
9 12
D7 Q7 D6 8 13 Q6
11 D7 9 12 Q7
LATCH ENABLE
PIN 20 = VCC GND 10 11 LATCH
1 ENABLE
OUTPUT ENABLE PIN 10 = GND

Figure 15. LOGIC DIAGRAM Figure 16. PIN ASSIGNMENT

FUNCTION TABLE
Inputs Output
Output Latch
Enable Enable D Q
L H H H
L H L L
L L X No Change
H X X Z
X = Don’t Care

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Z = High Impedance

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Count* 54.5 ea.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Propagation Delay

ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation
1.5

5.0
ns

W

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product
*Equivalent to a two−input NAND gate.
0.0075 pJ

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293
MC74HC573A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 35 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
PD Power Dissipation in Still Air, Plastic DIP† 750 mW Unused inputs must always be
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
TSSOP Package† 450 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, TSSOP or SOIC Package) 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: −6.1 mW/°C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
Î ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VCC
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎ
Input Rise and Fall Time

ÎÎÎÎÎ
ÎÎÎ
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns

ORDERING INFORMATION
Device Package Shipping†
MC74HC573AN PDIP−20 1440 Units / Box
MC74HC573ANG PDIP−20 1440 Units / Box
(Pb−Free)

MC74HC573ADW SOIC−WIDE 38 Units / Rail


MC74HC573ADWG SOIC−WIDE 38 Units / Rail
(Pb−Free)

MC74HC573ADWR2 SOIC−WIDE 1000 Units / Reel


MC74HC573ADWR2G SOIC−WIDE 1000 Units / Reel
(Pb−Free)

MC74HC573ADT TSSOP−20* 75 Units / Rail


MC74HC573ADTR2 TSSOP−20* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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294
MC74HC573A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎ
VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Test Conditions V – 55 to 25C  85C  125C Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage |Iout|  20 A 3.0 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 0.5 0.5 0.5 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 1.8 18 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 5.9 5.9 5.9
|Iout| ≤ 2.4mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VIH or VIL 3.0 2.48 2.34 2.2
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOL Maximum Low−Level Output Vout = 0.1 V or VCC – 0.1 V 2.0 0.1 0.1 0.1 V
Voltage |Iout|  20 A 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 0.1 0.1 0.1
|Iout| ≤ 2.4mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VIH or VIL 3.0 0.26 0.33 0.4
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
|Iout|  7.8 mA 6.0 0.26 0.33 0.4
± 0.1 ± 1.0 ± 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0
IOZ Maximum Three−State Output in High−Impedance State 6.0 – 0.5 – 5.0 – 10 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Leakage Current Vin = VIL or VIH

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vout = VCC or GND
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4.0 40 160 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Current (per Package) IIoutI = 0 A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VCC Guaranteed Limit
V – 55 to 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Symbol Parameter Unit
tPLH, Maximum Propagation Delay, Input D to Q 2.0 150 190 225 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL (Figures 1 and 5) 3.0 100 140 180

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 38 45
6.0 26 33 38

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Latch Enable to Q 2.0 160 200 240 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL (Figures 2 and 5) 3.0 105 145 190
4.5 32 40 48

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 27 34 41

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns
tPHZ (Figures 3 and 6) 3.0 100 125 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 38 45

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 26 33 38
tPZL, Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPZH (Figures 3 and 6) 3.0 100 125 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 38 45
6.0 26 33 38

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
(Figures 1 and 5)

ÎÎÎÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎ
2.0
3.0
4.5
60
27
12
75
32
15
90
36
18
ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Cout Maximum Three−State Output Capacitance (Output in High−Impedance 15 15 15 pF
State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Enabled Output)* 23 pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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295
MC74HC573A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
– 55 to 25C  85C  125C
VCC

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Fig. V Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tsu Minimum Setup Time, Input D to Latch Enable 4 2.0 50 65 75 ns
3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 9.0 11 13

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
th Minimum Hold Time, Latch Enable to Input D 4 2.0 5.0 5.0 5.0 ns
3.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tw Minimum Pulse Width, Latch Enable 2 2.0 75 95 110 ns
3.0 60 80 90

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Maximum Input Rise and Fall Times 1 2.0 1000 1000 1000 ns

ÎÎÎÎÎ
3.0 800 800 800

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎ
4.5 500 500 500
6.0 400 400 400

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296
MC74HC573A

SWITCHING WAVEFORMS

VCC
LATCH
tr tf 50%
ENABLE
VCC
90% GND
INPUT D 50%
10% GND tw
tPLH tPHL
90% tPLH tPHL
Q 50%
10%
tTLH tTHL Q 50%

Figure 17. Figure 18.

OUTPUT 3.0 V
ENABLE 50% VALID
GND VCC
tPZL tPLZ INPUT D 50%
HIGH GND
Q 50% IMPEDANCE tSU th
10% VOL VCC
tPZH tPHZ LATCH 50%
90% VOH GND
ENABLE
Q 1.3 V
HIGH
IMPEDANCE
Figure 19. Figure 20.

2
D0 D 19
Q Q0
TEST POINT LE
3
D1 D 18
OUTPUT Q Q1
LE
DEVICE
UNDER 4
D2 D 17
TEST CL* Q Q2
LE
5
D3 D 16
Q Q3
LE
*Includes all probe and jig capacitance 6
D4 D 15
Q Q4
Figure 21. Test Circuit LE
7
D5 D 14
Q Q5
LE
8
D6 D 13
TEST POINT Q Q6
LE
CONNECT TO VCC WHEN 9
OUTPUT 1 k D7
TESTING tPLZ AND tPZL. D 12
DEVICE Q Q7
CONNECT TO GND WHEN LE
UNDER TESTING tPHZ AND tPZH.
TEST CL*
11
LATCH ENABLE

1
OUTPUT ENABLE
*Includes all probe and jig capacitance

Figure 22. Test Circuit Figure 23. EXPANDED LOGIC DIAGRAM

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297
MC74HC574A

Octal 3−State Noninverting


D Flip−Flop
High−Performance Silicon−Gate CMOS
The MC74HC574A is identical in pinout to the LS574. The device
inputs are compatible with standard CMOS outputs; with pull−up
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resistors, they are compatible with LSTTL outputs.
Data meeting the set−up time is clocked to the outputs with the MARKING
rising edge of the Clock. The Output Enable input does not affect the DIAGRAMS
states of the flip−flops but when Output Enable is high, all device
outputs are forced to the high−impedance state. Thus, data may be 20
stored even when the outputs are not enabled. MC74HC574AN
1 AWLYYWW
The HC574A is identical in function to the HC374A but has the
flip−flop inputs on the opposite side of the package from the outputs to PDIP−20
facilitate PC board layout. N SUFFIX
CASE 783
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V

20
Low Input Current: 1.0 A
HC574A
• In Compliance with the Requirements Defined by JEDEC Standard
1
AWLYYWW
No. 7A SO−20

DW SUFFIX
Chip Complexity: 266 FETs or 66.5 Equivalent Gates CASE 751D

20

1
HC574A
TSSOP−20 ALYW
DT SUFFIX
CASE 948E

A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

ORDERING INFORMATION
Device Package Shipping
MC74HC574AN PDIP−20 1440/Box
MC74HC574ADW SOIC−WIDE 38/Rail
MC74HC574ADWR2 SOIC−WIDE 1000/Reel
MC74HC574ADT TSSOP−20 75/Rail
MC74HC574ADTR2 TSSOP−20 2500/Reel

 Semiconductor Components Industries, LLC, 2001 298 Publication Order Number:


May, 2001 − Rev. 9 MC74HC574A/D
MC74HC574A

OUTPUT 1 20 VCC
ENABLE
D0 2 19 Q0
D1 3 18 Q1 FUNCTION TABLE
D2 4 17 Q2 Inputs Output
D3 5 16 Q3 OE Clock D Q
D4 6 15 Q4 L H H
L L L
D5 7 14 Q5
L L,H, X No Change
D6 8 13 Q6 H X X Z

D7 9 12 Q7 X = Don’t Care
Z = High Impedance
GND 10 11 CLOCK

Figure 24. Pin Assignment

2 19
D0 Q0
3 18
D1 Q1
4 17
D2 Q2
DATA 5 16 NONINVERTING
D3 Q3
INPUTS 6 15 OUTPUTS
D4 Q4
7 14
D5 Q5
8 13
D6 Q6
9 12
D7 Q7
11
CLOCK
PIN 20 = VCC
1 PIN 10 = GND
OUTPUT ENABLE

Figure 25. Logic Diagram

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Internal Gate Count* 66.5 ea.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Internal Gate Propagation Delay

ÎÎÎ
ÎÎÎÎ
1.5 ns

W

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Internal Gate Power Dissipation 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Speed Power Product 0.0075 pJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Equivalent to a two−input NAND gate.

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299
MC74HC574A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to 7.0 V
VI DC Input Voltage 0.5 to VCC 0.5 V
VO DC Output Voltage (Note 2) 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 35 mA
IO DC Output Sink Current 35 mA
ICC DC Supply Current per Supply Pin 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature under Bias 150 C
JA Thermal Resistance PDIP 67 C/W
SOIC 96
TSSOP 128
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 3) >4000 V
Machine Model (Note 4) >300
Charged Device Model (Note 5) >1000
ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 6) 300 mA

1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. IO absolute maximum rating must be observed.
3. Tested to EIA/JESD22−A114−A.
4. Tested to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
7. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
VI, VO DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TA Operating Temperature, All Package Types 55 125 C
tr, tf Input Rise and Fall Time (Figure 26) VCC = 2.0 V 0 1000 ns
VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

8. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.

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300
MC74HC574A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
V
Symbol Parameter Test Conditions 55 to 25C 85C 125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VIH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Voltage
ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Minimum High−Level Input

ÎÎÎ
Vout = VCC – 0.1 V
|Iout|  20 A
2.0
3.0
4.5
1.5
2.1
3.15
1.5
2.1
3.15
1.5
2.1
3.15
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V 2.0 0.5 0.5 0.5 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
VOH Minimum High−Level Output Vin = VIH 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
VOH Minimum High−Level Output Vin = VIH |Iout|  2.4 mA 3.0 2.48 2.34 2.2 V
Voltage |Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Voltage
ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Low−Level Output

ÎÎÎ
Vin = VIL
|Iout|  20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Iin

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎÎ
Current
ÎÎÎ
ÎÎÎÎÎ Î
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
Vin = VCC or GND 6.0 0.1 1.0 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
IOZ

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Maximum Three−State

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Leakage Current

ÎÎÎÎÎÎÎ
ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0 0.5 5.0 10 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Quiescent Supply

ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 A
6.0 4.0 40 160

9. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
A

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301
MC74HC574A

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF; Input tr = tf = 6.0 ns)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
V
Symbol Parameter 55 to 25C 85C 125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 6.0 4.8 4.0 MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figures 26 and 29) 3.0 15 10 8.0
4.5 30 24 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 35 28 24

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock to Q 2.0 160 200 240 ns
tPHL (Figures 26 and 29) 3.0 105 145 190

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 32 40 48

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 27 34 41

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to Q 2.0 150 190 225 ns
tPHZ (Figures 27 and 30) 3.0 100 125 150

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 30 38 45
6.0 26 33 38

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to Q

ÎÎÎÎ
ÎÎÎ
(Figures 27 and 30)
2.0
3.0
4.5
140
90
28
175
120
35
210
140
42
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
60 24 30 36

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, any Output 2.0 60 75 90 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL (Figures 26 and 29) 3.0 27 32 36
4.5 12 15 18

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cout Maximum Three−State Output Capacitance, Output in High−Impedance 15 15 15 pF
State

10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Enabled Output)* 24 pF

*Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

TIMING REQUIREMENTS (CL = 50 pF; Input tr = tf = 6.0 ns)


Guaranteed Limit
VCC – 55 to 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Figure Volts Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tsu Minimum Setup Time, Data to Clock 28 2.0 50 65 75 ns
3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.6 10 13 15
6.0 9.0 11 13

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
th

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
Minimum Hold Time, Clock to Data

ÎÎÎ
ÎÎÎÎÎ
28 2.0
3.0
5.0
5.0
5.0
5.0
5.0
5.0
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
4.5 5.0 5.0 5.0
6.0 5.0 5.0 5.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
tw

ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Minimum Pulse Width, Clock

ÎÎ
26 2.0
3.0
4.5
75
60
15
95
80
19
110
90
22
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times 26 2.0 1000 1000 1000 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
3.0 800 800 800
4.5 500 500 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
6.0 400 400 400

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302
MC74HC574A

SWITCHING WAVEFORMS
tr tf
3.0 V
VCC 1.3 V
90%
CLOCK 50% GND
10% GND tPZL tPLZ
tw HIGH
1/fmax 1.3 V IMPEDANCE
Q
tPLH tPHL 10% VOL
tPZH tPHZ
90% 90% VOH
Q 50% Q
10% HIGH
IMPEDANCE
tTLH tTHL

Figure 26. Figure 27.

TEST POINT

VALID OUTPUT
VCC DEVICE
DATA 50% UNDER
GND TEST CL*
tsu th
VCC
CLOCK 50%
GND
*Includes all probe and jig capacitance.

Figure 28. Figure 29.

C 19
2 Q Q0
D0 D

C 18
3 Q Q1
D1 D

C 17
4 Q Q2
D2 D

C 16
TEST POINT 5 Q Q3
D3 D
CONNECT TO VCC WHEN
OUTPUT 1 kΩ
TESTING tPLZ AND tPZL. C 15
DEVICE CONNECT TO GND WHEN 6 Q Q4
D4 D
UNDER TESTING tPHZ AND tPZH.
TEST CL*
C 14
7 Q Q5
D5 D

*Includes all probe and jig capacitance. C 13


8 Q Q6
D6 D
Figure 30. Test Circuit
C 12
9 Q Q7
D7 D

11
CLOCK

1
OUTPUT ENABLE

Figure 31. Expanded Logic Diagram

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303
MC74HC589A

8−Bit Serial or
Parallel−Input/Serial−Output
Shift Register with 3−State
Output
High−Performance Silicon−Gate CMOS http://onsemi.com

The MC74HC589A device consists of an 8−bit storage latch which MARKING


feeds parallel data to an 8−bit shift register. Data can also be loaded DIAGRAMS
serially (see the Function Table). The shift register output, QH, is a 16
PDIP−16
three−state output, allowing this device to be used in bus−oriented MC74HC589AN
N SUFFIX
systems. 16
CASE 648
AWLYYWW
The HC589A directly interfaces with the SPI serial data port on 1
1
CMOS MPUs and MCUs. 16
• Output Drive Capability: 15 LSTTL Loads SO−16
HC589A
• Outputs Directly Interface to CMOS, NMOS, and TTL 16
D SUFFIX
CASE 751B
AWLYWW
• Operating Voltage Range: 2 to 6 V 1
1
• Low Input Current: 1 A 16
• High Noise Immunity Characteristic of CMOS Devices
TSSOP−16 HC
• In Compliance with the Requirements Defined by JEDEC Standard 16 DT SUFFIX 589A
No. 7A CASE 948F ALYW
1
• Chip Complexity: 526 FETs or 131.5 Equivalent Gates 1
A = Assembly Location
SERIAL L, WL = Wafer Lot
DATA 14
SA Y, YY = Year
INPUT W, WW = Work Week

15
A
1 B 1 16 VCC
B
2 C 2 15 A
C VCC = PIN 16
PARALLEL 3 D 3 14 SA
DATA D GND = PIN 8
4 DATA SHIFT SERIAL SHIFT/
INPUTS E E 4 13
LATCH REGISTER PARALLEL LOAD
5
F F 5 12 LATCH CLOCK
6
G SERIAL G 6 11 SHIFT CLOCK
7 9
H QH DATA H 7 10 OUTPUT ENABLE
OUTPUT
12 GND 8 9 QH
LATCH CLOCK

11 Figure 2. Pin Assignment


SHIFT CLOCK
SERIAL SHIFT/ 13
PARALLEL LOAD
10 ORDERING INFORMATION
OUTPUT ENABLE
Device Package Shipping
MC74HC589AN PDIP−16 2000/Box
Figure 1. Logic Diagram
MC74HC589AD SOIC−16 48/Rail
MC74HC589ADR2 SOIC−16 2500/Reel
MC74HC589ADT TSSOP−16 96/Rail
MC74HC589ADTR2 TSSOP−16 2500/Reel

 Semiconductor Components Industries, LLC, 2001 304 Publication Order Number:


June, 2001 − Rev. 2 MC74HC589A/D
MC74HC589A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) 0.5 to 7.0 V
Vin DC Input Voltage (Referenced to GND) 0.5  VCC 0.5 V
Vout DC Output Voltage (Referenced to GND) 0.5  VCC 0.5 V
Iin DC Input Current, per Pin 20 mA
Iout DC Output Current, per Pin 35 mA
ICC DC Supply Current, VCC and GND Pins 75 mA
IGND DC Ground Current per Ground Pin 75 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature Under Bias 150 C
JA Thermal Resistance PDIP 78 C/W
SOIC 112
TSSOP 148
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 2) 4000 V
Machine Model (Note 3) 200
Charged Device Model (Note 4) 1000
ILATCH−UP Latch−Up Performance Above VCC and Below GND at 85C (Note 5) 300 mA
1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
6. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Supply Voltage
Parameter
(Referenced to GND)
Min
2.0
Max
6.0
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
DC Input Voltage, Output Voltage

ÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
(Referenced to GND) 0
55
VCC
125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Input Rise and Fall Time

ÎÎÎÎ
ÎÎÎ
VCC = 2.0 V
VCC = 3.0 V
0
0
1000
800
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 400
7. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.

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MC74HC589A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND, Note 8)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VIH ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Parameter

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Minimum High−Level Input
Test Conditions
Vout = 0.1 V or VCC 0.1 V
V
2.0
55C to 25C
1.5
85C
1.5
125C
1.5
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage |Iout|  20 A 3.0 2.1 2.1 2.1
4.5 3.15 3.15 3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 4.2 4.2 4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC 0.1 V 2.0 0.5 0.5 0.5 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Voltage 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
VOH Minimum High−Level Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Output Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 2.48 2.34 2.20
|Iout|  6.0 mA 4.5 3.98 3.84 3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
|Iout|  7.8 mA 6.0 5.48 5.34 5.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
Maximum Low−Level

ÎÎÎÎ
Output Voltage

ÎÎÎÎÎÎ
Vin = VIH
|Iout|  20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Iin

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎÎ
Current
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Vin = VCC or GND 6.0 0.1 1.0 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
IOZ

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
Maximum Three−State

ÎÎÎÎ
Leakage Current

ÎÎÎÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0 0.5 5.0 10 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Maximum Quiescent

ÎÎÎÎ
Supply Current
(per Package)
ÎÎ
ÎÎÎÎÎÎ
Vin = VCC or GND
Iout = 0 A
6.0 4 40 160 A

8. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC589A

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns, Notes 9 and 10)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Parameter
Maximum Clock Frequency (50% Duty Cycle)
V
2.0
55C to 25C
6.0
85C
4.8
125C
4.0
Unit
MHz

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figures 2 and 8) 3.0 15 10 8.0
4.5 30 24 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 35 28 24

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Latch Clock to QH 2.0 175 225 275 ns
3.0 100 110 125

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPHL (Figures 1 and 8)
4.5 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 30 40 50

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Shift Clock to QH 2.0 160 200 240 ns
tPHL (Figures 2 and 8) 3.0 90 130 160

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 30 40 48
6.0 25 30 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(Figures 4 and 8) ÎÎ
Maximum Propagation Delay, Serial Shift/Parallel Load to QH

ÎÎ
2.0
3.0
160
90
200
130
240
160
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎ
4.5

ÎÎÎÎÎ
30

ÎÎÎÎ
40

ÎÎÎÎ
48
6.0 25 30 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(Figures 3 and 9) ÎÎ
Maximum Propagation Delay, Output Enable to QH

ÎÎ
2.0
3.0
4.5
150
80
27
170
100
30
200
130
40
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 23 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to QH 2.0 150 170 200 ns
3.0 80 100 130

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tPZH (Figures 3 and 9)
4.5 27 30 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 23 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 60 75 90 ns
tTHL (Figures 1 and 8) 3.0 23 27 31

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Maximum Input Capacitance − 10 10 10 pF

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎ
Maximum Three−State Output Capacitance

ÎÎÎÎÎÎ
(Output in High−Impedance State)
− 15 15

9. For propagation delays with loads other than 50 pF, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
15 pF

10. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25C, VCC = 5.0 V


CPD Power Dissipation Capacitance (per Package)* 50 pF
*Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).

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MC74HC589A

TIMING REQUIREMENTS (Input tr = tf = 6 ns, Note 11)


VCC Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Parameter
Minimum Setup Time, A−H to Latch Clock
V
2.0
55C to 25C
100
85C
125
125C
150
Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 5) 3.0 40 50 60
4.5 20 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tsu Minimum Setup Time, Serial Data Input SA to Shift Clock 2.0 100 125 150 ns
3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 6)
4.5 20 25 30

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 17 21 26

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tsu Minimum Setup Time, Serial Shift/Parallel Load to Shift Clock 2.0 100 125 150 ns
(Figure 7) 3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 20 25 30
6.0 17 21 26

ÎÎÎÎ
th
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 5) ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Minimum Hold Time, Latch Clock to A−H

ÎÎ
2.0
3.0
25
10
30
12
40
15
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎ
4.5

ÎÎÎÎÎ
5

ÎÎÎÎ
6

ÎÎÎÎ
8
6.0 5 6 7

ÎÎÎÎ
th
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 6) ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Minimum Hold Time, Shift Clock to Serial Data Input SA

ÎÎ
2.0
3.0
4.5
5
5
5
5
5
5
5
5
5
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 5 5 5

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tw Minimum Pulse Width, Shift Clock 2.0 75 95 110 ns
3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
(Figure 2)
4.5 15 19 23

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
6.0 13 16 19

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
tw Minimum Pulse Width, Latch Clock 2.0 80 100 120 ns
(Figure 1) 3.0 40 50 60

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
4.5 16 20 24
6.0 14 17 20

ÎÎÎÎ
tw
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
(Figure 4) ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
Minimum Pulse Width, Serial Shift/Parallel Load

ÎÎ
2.0
3.0
80
40
100
50
120
60
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎ
4.5

ÎÎÎÎÎ
16

ÎÎÎÎ
20

ÎÎÎÎ
24
6.0 14 17 20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
Maximum Input Rise and Fall Times

ÎÎÎÎ
ÎÎÎÎ
2.0 1000 1000 1000 ns

ÎÎÎÎÎÎ
(Figure 1) 3.0 800 800 800
4.5 500 500 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ ÎÎ
6.0 400 400 400
11. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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MC74HC589A

FUNCTION TABLE
Inputs Resulting Function
Serial Parallel Data Shift
Output Serial Shift/ Latch Shift Input Inputs Latch Register Output
Operation Enable Parallel Load Clock Clock SA A−H Contents Contents QH
Force Output into High H X X X X X X X Z
Impedance State

Load Parallel Data into Data L H L, H, X a−h a−h U U


Latch

Transfer Latch Contents to L L L, H, X X X U LRN → SRN LRH


Shift Register

Contents of Input Latch and L H L, H, L, H, X X U U U


Shift Register are Unchanged

Load Parallel Data into Data L L X X a−h a−h a−h h


Latch and Shift Register

Shift Serial Data into Shift L H X D X * SRA = D, SRG → SRH


Register SRN →SRN+1

Load Parallel Data in Data L H D a−h a−h SRA = D, SRG → SRH


Latch and Shift Serial Data SRN →SRN+1
into Shift Register
LR = latch register contents U = remains unchanged
SR = shift register contents X = don’t care
a−h = data at parallel data inputs A−H Z = high impedance
D = data (L, H) at serial data input SA * = depends on Latch Clock input

Switching Waveforms

tr tf
1/fmax
VCC
LATCH 90% tw
50% VCC
CLOCK 10% GND SHIFT
tw 50%
CLOCK GND

tPLH tPHL
tPLH tPHL
90%
QH 50%
10% QH 50%
tTLH tTHL

Figure 3. (Serial Shift/Parallel Load = L) Figure 4. (Serial Shift/Parallel Load = H)

VCC
OUTPUT 50%
ENABLE GND tw
tPZL tPLZ VCC
HIGH SERIAL SHIFT/ 50% 50%
IMPEDANCE PARALLEL LOAD GND
50%
QH tPLH tPHL
10% VOL
tPZH tPHZ
90% VOH QH 50%
QH 50% HIGH
IMPEDANCE

Figure 5. Figure 6.

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Switching Waveforms
DATA DATA
VALID VALID
VCC VCC
A−H 50% SA 50%
GND GND
tsu th tsu th

LATCH 50% SHIFT 50%


CLOCK CLOCK

Figure 7. Figure 8.

VCC
SERIAL SHIFT/ 50%
PARALLEL GND
LOAD tsu

SHIFT 50%
CLOCK

Figure 9.

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 k
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* CL*
TEST

*Includes all probe and jig capacitance. *Includes all probe and jig capacitance.

Figure 10. Test Circuit Figure 11. Test Circuit

Pin Descriptions

Data Inputs data in stage H is shifted out QH, being replaced by the data
A, B, C, D, E, F, G, H (Pins 15, 1, 2, 3, 4, 5, 6, 7) previously stored in stage G.
Parallel data inputs. Data on these inputs are stored in the Latch Clock (Pin 12)
data latch on the rising edge of the Latch Clock input. Data latch clock. A low−to−high transition on this input
SA (Pin 14) loads the parallel data on inputs A−H into the data latch.
Serial data input. Data on this input is shifted into the shift Output Enable (Pin 10)
register on the rising edge of the Shift Clock input if Serial Active−low output enable A high level applied to this pin
Shift/Parallel Load is high. Data on this input is ignored forces the QH output into the high impedance state. A low
when Serial Shift/Parallel Load is low. level enables the output. This control does not affect the state
Control Inputs of the input latch or the shift register.

Serial Shift/Parallel Load (Pin 13) Output


Shift register mode control. When a high level is applied QH (Pin 9)
to this pin, the shift register is allowed to serially shift data. Serial data output. This pin is the output from the last stage
When a low level is applied to this pin, the shift register of the shift register. This is a 3−state output.
accepts parallel data from the data latch.
Shift Clock (Pin 11)
Serial shift clock. A low−to−high transition on this input
shifts data on the serial data input into the shift register and

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SHIFT CLOCK
SERIAL DATA
INPUT, SA

OUTPUT
ENABLE

SERIAL SHIFT/
PARALLEL LOAD

LATCH CLOCK

A L H L L

B L L L L

C L H L L

PARALLEL D L L L L
DATA
INPUTS
E L H L H

F L H L H

G L L L L

H L H H H

QH
ÉÉÉÉ
HIGH IMPEDANCE

SERIAL SHIFT
H L H H

SERIAL SHIFT
L H L H L H L L

SERIAL SHIFT
L H L H H

SERIAL
SHIFT

RESET LOAD PARALLEL LOAD PARALLEL PARALLEL LOAD,


LATCH LATCH LOAD LATCH LOAD LATCH, AND
AND SHIFT SHIFT SHIFT REGISTER
SHIFT REGISTER REGISTER
REGISTER

Figure 12. Timing Diagram

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MC74HC589A

OUTPUT 10
ENABLE
14
SA
SHIFT
11
CLOCK
SERIAL SHIFT/ 13
PARALLEL
LOAD
12
LATCH STAGE A
CLOCK
15
A D Q
C S
D
C Q
R

STAGE B
1
B D Q
C S
D
C Q
R

PARALLEL
DATA 2
INPUTS C STAGE C*

3
D STAGE D*

4
E STAGE E*

5
F STAGE F*

6
G STAGE G*

STAGE H
VCC
7
H D Q
C S
D 9
C Q QH
R

*Stages C thru G (not shown in detail) are identical to stages A and B above.

Figure 13. Logic Detail

http://onsemi.com
312
MC74HC595A

8−Bit Serial−Input/Serial or
Parallel−Output Shift
Register with Latched
3−State Outputs
High−Performance Silicon−Gate CMOS http://onsemi.com

The MC74HC595A consists of an 8−bit shift register and an 8−bit MARKING


D−type latch with three−state parallel outputs. The shift register DIAGRAMS
accepts serial data and provides a serial output. The shift register also 16
PDIP−16
provides parallel data to the 8−bit latch. The shift register and latch MC74HC595AN
N SUFFIX
have independent clock inputs. This device also has an asynchronous 16
CASE 648
AWLYYWW
reset for the shift register. 1
1
The HC595A directly interfaces with the SPI serial data port on 16
CMOS MPUs and MCUs. SO−16
HC595A
• Output Drive Capability: 15 LSTTL Loads 16
D SUFFIX
AWLYWW
CASE 751B
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
1
• Operating Voltage Range: 2.0 to 6.0 V 16
• Low Input Current: 1.0 µA
HC

TSSOP−16
High Noise Immunity Characteristic of CMOS Devices 16 DT SUFFIX 595A
• In Compliance with the Requirements Defined by JEDEC Standard 1
CASE 948F ALYW
No. 7A 1
• Chip Complexity: 328 FETs or 82 Equivalent Gates A = Assembly Location
• Improvements over HC595 WL = Wafer Lot
YY = Year
— Improved Propagation Delays
WW = Work Week
— 50% Lower Quiescent Power
— Improved Input Noise and Latchup Immunity
PIN ASSIGNMENT
LOGIC DIAGRAM QB 1 16 VCC
SERIAL
DATA 14 15 QC 2 15 QA
A QA
INPUT 1
QB QD 3 14 A
2
QC QE 4 13 OUTPUT ENABLE
3 PARALLEL
QD QF 5 12 LATCH CLOCK
4 DATA
SHIFT QE OUTPUTS
LATCH QG 6 11 SHIFT CLOCK
REGISTER 5
QF
6 QH 7 10 RESET
QG
7 GND 8 9 SQH
QH
SHIFT 11
CLOCK
10 9 SERIAL
RESET SQH DATA
OUTPUT ORDERING INFORMATION
LATCH 12
CLOCK Device Package Shipping
VCC = PIN 16
OUTPUT 13 MC74HC595AN PDIP−16 2000 / Box
GND = PIN 8
ENABLE
MC74HC595AD SOIC−16 48 / Rail
MC74HC595ADR2 SOIC−16 2500 / Reel
MC74HC595ADT TSSOP−16 96 / Rail
MC74HC595ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 313 Publication Order Number:


March, 2000 − Rev. 8 MC74HC595A/D
MC74HC595A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 35 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage 0 VCC V
(Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 µA 3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
2.0
3.0
0.5
0.9
0.5
0.9
0.5
0.9
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
Voltage, QA − QH

ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
2.0
4.5
1.9
4.4
1.9
4.4
1.9
4.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 2.48 2.34 2.2
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  7.8 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
|Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage, QA − QH 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
|Iout|  6.0 mA
|Iout|  7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

http://onsemi.com
314
MC74HC595A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V Unit
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage, SQH

ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IIoutI  20 µA 4.5
6.0
4.4
5.9
4.4
5.9
4.4
5.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA 3.0 2.98 2.34 2.2
IIoutI  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IIoutI 5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 2.0 0.1 0.1 0.1 V
IIoutI  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage, SQH 4.5 0.1 0.1 0.1
6.0 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
IIoutI  4.0 mA
IIoutI 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
IOZ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Leakage
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Three−State

ÎÎÎÎ
Current, QA − QH
ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
lout = 0 µA
6.0 4.0 40 160 µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 7)
2.0
3.0
4.5
6.0
15
30
4.8
10
24
4.0
8.0
20
MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 35 28 24

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Shift Clock to SQH 2.0 140 175 210 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 1 and 7) 3.0 100 125 150
4.5 28 35 42

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 24 30 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL Maximum Propagation Delay, Reset to SQH 2.0 145 180 220 ns
(Figures 2 and 7) 3.0 100 125 150

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 29 36 44

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
6.0

ÎÎÎÎ
25

ÎÎÎ
31

ÎÎÎÎ
38
tPLH,

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Latch Clock to QA − QH

ÎÎÎÎ
ÎÎÎ
(Figures 3 and 7)
2.0
3.0
140
100
175
125
210
150
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 28 35 42
6.0 24 30 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to QA − QH

ÎÎÎÎ
ÎÎÎ
(Figures 4 and 8)
2.0
3.0
4.5
150
100
30
190
125
38
225
150
45
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 26 33 38

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to QA − QH 2.0 135 170 205 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZH (Figures 4 and 8) 3.0 90 110 130
4.5 27 34 41

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 23 29 35

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, QA − QH 2.0 60 75 90 ns
tTHL (Figures 3 and 7) 3.0 23 27 31

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15

http://onsemi.com
315
MC74HC595A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
25C  85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V Unit
tTLH, Maximum Output Transition Time, SQH 2.0 75 95 110 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL (Figures 1 and 7) 3.0 27 32 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance (Output in
High−Impedance State), QA − QH


10
15
10
15
10
15
pF
pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Package)* 300 pF
2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
VCC
V
25C to
– 55C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Serial Data Input A to Shift Clock 2.0 50 65 75 ns
(Figure 5) 3.0 40 50 60

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
10
9.0
13
11
15
13

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Shift Clock to Latch Clock 2.0 75 95 110 ns
(Figure 6) 3.0 60 70 80

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 16 19

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
th Minimum Hold Time, Shift Clock to Serial Data Input A 2.0 5.0 5.0 5.0 ns
(Figure 5) 3.0 5.0 5.0 5.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 5.0 5.0 5.0
6.0 5.0 5.0 5.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
trec

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(Figure 2) ÎÎÎ
Minimum Recovery Time, Reset Inactive to Shift Clock

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
2.0
3.0
50
40
65
50
75
60
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 10 13 15
6.0 9.0 11 13

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tw
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(Figure 2) ÎÎÎ
Minimum Pulse Width, Reset

ÎÎÎÎ
ÎÎÎ
2.0
3.0
60
45
75
60
90
70
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tw
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(Figure 1) ÎÎÎ
Minimum Pulse Width, Shift Clock

ÎÎÎÎ
ÎÎÎ
2.0
3.0
4.5
50
40
10
65
50
13
75
60
15
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Minimum Pulse Width, Latch Clock
6.0
2.0
9.0
50
11
65
13
75 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 6) 3.0 40 50 60
4.5 10 13 15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 9.0 11 13

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 1) 3.0 800 800 800
4.5 500 500 500

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 400 400 400

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316
MC74HC595A

FUNCTION TABLE

Inputs Resulting Function


Serial Shift Latch Serial Parallel
Input Shift Latch Output Register Register Output Outputs
Operation Reset A Clock Clock Enable Contents Contents SQH QA − QH
Reset shift register L X X L, H, ↓ L L U L U
Shift data into shift H D ↑ L, H, ↓ L D → SRA; U SRG → SRH U
register SRN → SRN+1
Shift register remains H X L, H, ↓ L, H, ↓ L U U U U
unchanged
Transfer shift register H X L, H, ↓ ↑ L U SRN → LRN U SRN
contents to latch
register
Latch register remains X X X L, H, ↓ L * U * U
unchanged
Enable parallel outputs X X X X L * ** * Enabled
Force outputs into high X X X X H * ** * Z
impedance state
SR = shift register contents D = data (L, H) logic level ↑ = Low−to−High * = depends on Reset and Shift Clock inputs
LR = latch register contents U = remains unchanged ↓ = High−to−Low ** = depends on Latch Clock input

PIN DESCRIPTIONS

INPUTS Output Enable (Pin 13)


A (Pin 14) Active−low Output Enable. A low on this input allows the
Serial Data Input. The data on this pin is shifted into the data from the latches to be presented at the outputs. A high
8−bit serial shift register. on this input forces the outputs (QA−QH) into the
CONTROL INPUTS high−impedance state. The serial output is not affected by
Shift Clock (Pin 11) this control unit.
Shift Register Clock Input. A low− to−high transition on OUTPUTS
this input causes the data at the Serial Input pin to be shifted QA − QH (Pins 15, 1, 2, 3, 4, 5, 6, 7)
into the 8−bit shift register. Noninverted, 3−state, latch outputs.
Reset (Pin 10) SQH (Pin 9)
Active−low, Asynchronous, Shift Register Reset Input. A Noninverted, Serial Data Output. This is the output of the
low on this pin resets the shift register portion of this device eighth stage of the 8−bit shift register. This output does not
only. The 8−bit latch is not affected. have three−state capability.
Latch Clock (Pin 12)
Storage Latch Clock Input. A low−to−high transition on
this input latches the shift register data.

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317
MC74HC595A

SWITCHING WAVEFORMS

tr tf tw
VCC VCC
SHIFT 90% 50%
50% RESET
CLOCK GND
10% GND
tw tPHL

1/fmax 50%
OUTPUT
tPLH tPHL SQH
90% trec
OUTPUT
SQH 50% SHIFT VCC
10% 50%
CLOCK
tTLH tTHL GND

Figure 1. Figure 2.

VCC
LATCH VCC OUTPUT 50%
50% ENABLE GND
CLOCK
GND tPZL tPLZ
HIGH
50% IMPEDANCE
tPLH tPHL OUTPUT Q
10% VOL
90%
QA−QH 50% tPZH tPHZ
90% VOH
OUTPUTS 10%
OUTPUT Q 50% HIGH
tTLH tTHL
IMPEDANCE

Figure 3. Figure 4.

VCC
SHIFT
VALID 50%
CLOCK
VCC GND
SERIAL
50% tsu
INPUT A
GND VCC
tsu th LATCH
50%
VCC CLOCK
SWITCH GND
50% tw
CLOCK
GND

Figure 5. Figure 6.

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance
Figure 7. Figure 8.

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318
MC74HC595A

EXPANDED LOGIC DIAGRAM

OUTPUT 13
ENABLE

LATCH 12
CLOCK

SERIAL 14 15
D Q D Q QA
DATA
INPUT A SRA LRA
R

1
D Q D Q QB
SRB LRB
R

2
D Q D Q QC
SRC LRC
R

3
D Q D Q QD
SRD LRD PARALLEL
R DATA
OUTPUTS
4
D Q D Q QE
SRE LRE
R

5
D Q D Q QF
SRF LRF
R

6
D Q D Q QG
SRG LRG
R

7
D Q D Q QH
SHIFT
11
CLOCK SRH LRH
R

10 SERIAL
RESET 9 DATA
OUTPUT SQH

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319
MC74HC595A

TIMING DIAGRAM

SHIFT
CLOCK
SERIAL DATA
INPUT A

RESET

LATCH
CLOCK

OUTPUT
ENABLE

QA

QB

QC

QD

QE

QF

QG

QH

SERIAL DATA
OUTPUT SQH
NOTE: implies that the output is in a high−impedance
state.

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320
MC74HC74A

Dual D Flip−Flop with Set


and Reset
High−Performance Silicon−Gate CMOS
The MC74HC74A is identical in pinout to the LS74. The device http://onsemi.com
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
MARKING
This device consists of two D flip−flops with individual Set, Reset,
DIAGRAMS
and Clock inputs. Information at a D−input is transferred to the
corresponding Q output on the next positive going edge of the clock 14
input. Both Q and Q outputs are available from each flip−flop. The Set PDIP−14
and Reset inputs are asynchronous. N SUFFIX MC74HC74AN
CASE 646 AWLYYWW
Features
1
• Pb−Free Packages are Available**
• Output Drive Capability: 10 LSTTL Loads
14
SOIC−14
• Outputs Directly Interface to CMOS, NMOS, and TTL D SUFFIX
HC74A
AWLYWW
• Operating Voltage Range: 2.0 to 6.0 V CASE 751A

• Low Input Current: 1.0 A 1


14
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the JEDEC Standard No. 7.0 A Requirements TSSOP−14 HC
74A

DT SUFFIX
Chip Complexity: 128 FETs or 32 Equivalent Gates CASE 948G ALYW
1 1
RESET 1

2 5
DATA 1 Q1 A = Assembly Location
3 6 WL or L = Wafer Lot
CLOCK 1 Q1
YY or Y = Year
4 WW or W = Work Week
SET 1
PIN 14 = VCC
PIN 7 = GND
13
RESET 2 PIN ASSIGNMENT
12 9
DATA 2 Q2 RESET 1 1 14 VCC
11 8
CLOCK 2 Q2 DATA 1 2 13 RESET 2

10 CLOCK 1 3 12 DATA 2
SET 2
SET 1 4 11 CLOCK 2
Figure 14. LOGIC DIAGRAM
Q1 5 10 SET 2
FUNCTION TABLE Q1 6 9 Q2
Inputs Outputs GND 7 8 Q2
Set Reset Clock Data Q Q
L H X X H L
H L X X L H ORDERING INFORMATION
L L X X H* H* See detailed ordering and shipping information in the package
H H H H L dimensions section on page 322 of this data sheet.
H H L L H
H H L X No Change
**For additional information on our Pb−Free strategy
H H H X No Change
and soldering details, please download the
H H X No Change ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
*Both outputs will remain high as long as Set and Reset are low, but the output
states are unpredictable if Set and Reset go high simultaneously.

 Semiconductor Components Industries, LLC, 2004 321 Publication Order Number:


December, 2004 − Rev. 9 MC74HC74A/D
MC74HC74A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 25 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
PD Power Dissipation in Still Air, Plastic DIP† 750 mW Unused inputs must always be
SOIC Package† 500 tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ TSSOP Package† 450 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260
C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VCC
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Input Rise and Fall Time

ÎÎÎ
VCC = 2.0 V 0 1000 ns

ÎÎÎÎÎ
(Figures 1, 2, 3) VCC = 3.0 V 0 600
VCC = 4.5 V 0 500

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎ VCC = 6.0 V 0 400

ORDERING INFORMATION
Device Package Shipping†
MC74HC74AN PDIP−14 2000 Units / Box
MC74HC74ANG PDIP−14 2000 Units / Box
(Pb−Free)

MC74HC74AD SOIC−14 55 Units / Rail


MC74HC74ADR2 SOIC−14 2500 Units / Reel
MC74HC74ADR2G SOIC−14 2500 Units / Reel
(Pb−Free)

MC74HC74ADT TSSOP−14* 96 Units / Rail


MC74HC74ADTR2 TSSOP−14* 2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.

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322
MC74HC74A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  20 A 3.0
4.5
2.1
3.15
2.1
3.15
2.1
3.15

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
6.0

ÎÎÎÎ
4.2

ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.2 4.2
VIL 2.0 0.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 0.5 0.5
Voltage |Iout|  20 A 3.0 0.9 0.9 0.9

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 1.8 1.8 1.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 2.0 1.9 1.9 1.9 V
Voltage |Iout|  20 A 4.5 4.4 4.4 4.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL |Iout|  2.4 mA
|Iout|  4.0 mA
6.0
3.0
5.9
2.48
5.9
2.34
5.9
2.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.98 3.84 3.7
|Iout|  5.2 mA 6.0 5.48 5.34 5.2

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VOL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 A
2.0
4.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1
Vin = VIH or VIL |Iout|  2.4 mA 3.0 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA
|Iout|  5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 A
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 A
6.0 2.0 20 80

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
– 55 to

ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Clock Frequency (50% Duty Cycle)

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
2.0
3.0
4.5
6.0
15
30
4.8
10
24
4.0
8.0
20
MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 35 28 24

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock to Q or Q 2.0 100 125 150 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHL (Figures 1 and 4) 3.0 75 90 120
4.5 20 25 30

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 17 21 26

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Set or Reset to Q or Q 2.0 105 130 160 ns
tPHL (Figures 2 and 4) 3.0 80 95 130

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
21
18
26
22
32
27

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 4) 3.0 30 40 55

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 16 19
Cin Maximum Input Capacitance — 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Flip−Flop)* 32 pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
323
MC74HC74A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter V 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Data to Clock 2.0 80 100 120 ns
(Figure 3) 3.0 35 45 55

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
16
14
20
17
24
20

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
th Minimum Hold Time, Clock to Data 2.0 3.0 3.0 3.0 ns
(Figure 3) 3.0 3.0 3.0 3.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ 4.5 3.0 3.0 3.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 3.0 3.0 3.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
trec Minimum Recovery Time, Set or Reset Inactive to Clock 2.0 8.0 8.0 8.0 ns
(Figure 2) 3.0 8.0 8.0 8.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
8.0
8.0
8.0
8.0
8.0
8.0

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock 2.0 60 75 90 ns
(Figure 1) 3.0 25 30 40

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
12
10
15
13
18
15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Set or Reset 2.0 60 75 90 ns
(Figure 2) 3.0 25 30 40

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
12
10
15
13
18
15

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns
(Figures 1, 2, 3) 3.0 800 800 800

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
500
400
500
400
500
400

http://onsemi.com
324
MC74HC74A

SWITCHING WAVEFORMS

tw
tf tr VCC
VCC SET OR 50%
90%
CLOCK 50% RESET GND
10% GND tPHL
tw
1/fmax Q OR Q 50%

tPLH tPHL
tPLH
90%
50%
Q or Q 10% Q OR Q 50%
trec
tTLH tTHL
VCC
CLOCK 50%
GND

Figure Figure
15. 16.

TEST POINT
VALID
VCC
DATA 50% OUTPUT
GND DEVICE
tsu th UNDER
VCC TEST CL*
50%
CLOCK GND
*Includes all probe and jig capacitance

Figure Figure 18.


17.

4, 10
SET

2, 12 5, 9
DATA Q

3, 11
CLOCK

6, 8
Q

1, 13
RESET

Figure 19. EXPANDED LOGIC DIAGRAM

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325
MC74HCT04A

Hex Inverter
With LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT04A may be used as a level converter for interfacing
TTL or NMOS outputs to High−Speed CMOS inputs.
http://onsemi.com
The HCT04A is identical in pinout to the LS04.
MARKING
• Output Drive Capability: 10 LSTTL Loads DIAGRAMS
• TTL/NMOS−Compatible Input Levels 14
• Outputs Directly Interface to CMOS, NMOS and TTL PDIP−14
N SUFFIX MC74HCT04AN
• Operating Voltage Range: 4.5 to 5.5V CASE 646 AWLYYWW
• Low Input Current: 1µA 1
• In Compliance With the JEDEC Standard No. 7A Requirements 14
SOIC−14
• Chip Complexity: 48 FETs or 12 Equivalent Gates D SUFFIX
HCT04A
AWLYWW
CASE 751A
LOGIC DIAGRAM 1
14
1 2 TSSOP−14 HCT
A1 Y1
DT SUFFIX 04A
CASE 948G ALYW
3 4
A2 Y2 1
A = Assembly Location
WL or L = Wafer Lot
5 6
A3 Y3 YY or Y = Year
WW or W = Work Week
Y=A
9 8 Pin 14 = VCC
A4 Y4
Pin 7 = GND FUNCTION TABLE
Inputs Outputs
11 10
A5 Y5
A Y
L H
13 12
A6 Y6 H L

Pinout: 14−Lead Packages (Top View)

VCC A6 Y6 A5 Y5 A4 Y4
14 13 12 11 10 9 8
ORDERING INFORMATION
Device Package Shipping
MC74HCT04AN PDIP−14 2000 / Box
MC74HCT04AD SOIC−14 55 / Rail
MC74HCT04ADR2 SOIC−14 2500 / Reel
1 2 3 4 5 6 7 MC74HCT04ADT TSSOP−14 96 / Rail

A1 Y1 A2 Y2 A3 Y3 GND MC74HCT04ADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 326 Publication Order Number:


March, 2000 − Rev. 7 MC74HCT04A/D
MC74HCT04A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature Range – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎ
ÎÎÎÎÎÎ
Operating Temperature Range, All Package Types

ÎÎ
ÎÎÎ
Input Rise/Fall Time (Figure 1)
– 55
0
+ 125
500
C
ns

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327
MC74HCT04A

DC CHARACTERISTICS (Voltages Referenced to GND)


Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V 4.5 2.0 2.0 2.0 V
Voltage |Iout| ≤ 20µA 5.5 2.0 2.0 2.0
VIL Maximum Low−Level Input Vout = VCC − 0.1V 4.5 0.8 0.8 0.8 V
Voltage |Iout| ≤ 20µA 5.5 0.8 0.8 0.8
VOH Minimum High−Level Output Vin = VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout| ≤ 20µA 5.5 5.4 5.4 5.4
Vin = VIL |Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
VOL Maximum Low−Level Output Vin = VIH 4.5 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 5.5 0.1 0.1 0.1
Vin = VIH |Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
Iin Maximum Input Leakage Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 µA
Current
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 1 10 40 µA
Current (per Package) Iout = 0µA

∆ICC Additional Quiescent Supply Vin = 2.4V, Any One Input ≥ −55°C 25 to 125°C
Current Vin
i = VCC or GND
GND, Other Inputs
Iout = 0µA 5.5 2.9 2.4 mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.

AC CHARACTERISTICS (VCC = 5.0V ±10%, CL = 50pF, Input tr = tf = 6ns)


Guaranteed Limit
Symbol Parameter −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A to Output Y 15 19 22 ns
tPHL (Figures 1 and 2) 17 21 26
tTLH, Maximum Output Transition Time, Any Output 15 19 22 ns
tTHL (Figures 1 and 2)
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Inverter)* 22 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
328
MC74HCT04A

tf tr
3.0V
2.7V
INPUT A 1.3V
0.3V GND
tPLH tPHL

90%
OUTPUT Y 1.3V
10%

tTLH tTHL

Figure 1. Switching Waveforms

TEST
POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A Y

Figure 3. Expanded Logic Diagram


(1/6 of the Device Shown)

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329
MC74HCT138A

1−of−8 Decoder/
Demultiplexer with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
http://onsemi.com
The MC74HCT138A is identical in pinout to the LS138. The
HCT138A may be used as a level converter for interfacing TTL or MARKING
NMOS outputs to High Speed CMOS inputs. DIAGRAMS
The HCT138A decodes a three−bit Address to one−of−eight 16
active−lot outputs. This device features three Chip Select inputs, two PDIP−16
MC74HCT138AN
active−low and one active−high to facilitate the demultiplexing, 16
N SUFFIX
AWLYYWW
cascading, and chip−selecting functions. The demultiplexing function CASE 648
1
is accomplished by using the Address inputs to select the desired 1
device output; one of the Chip Selects is used as a data input while the 16
other Chip Selects are held in their active states. SO−16
HCT138A
D SUFFIX
• Output Drive Capability: 10 LSTTL Loads 16
CASE 751B
AWLYWW


1
TTL/NMOS Compatible Input Levels 1
• Outputs Directly Interface to CMOS, NMOS, and TTL 16

• Operating Voltage Range: 4.5 to 5.5 V TSSOP−16 HCT


• Low Input Current: 1.0 µA 16 DT SUFFIX 138A
ALYW
CASE 948F
• In Compliance with the Requirements Defined by JEDEC Standard 1
1
No. 7A
• Chip Complexity: 122 FETs or 30.5 Equivalent Gates A
WL
= Assembly Location
= Wafer Lot
YY = Year
WW = Work Week

ORDERING INFORMATION
Device Package Shipping
MC74HCT138AN PDIP−16 2000 / Box
MC74HCT138AD SOIC−16 48 / Rail
MC74HCT138ADR2 SOIC−16 2500 / Reel
MC74HCT138ADT TSSOP−16 96 / Rail
MC74HCT138ADTR2 TSSOP−16 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 330 Publication Order Number:


March, 2000 − Rev. 7 MC74HCT138A/D
MC74HCT138A

LOGIC DIAGRAM FUNCTION TABLE


Inputs Outputs
1 15
A0 Y0 CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
ADDRESS 2 14 X X H X X X H H H H H H H H
A1 Y1
INPUTS X H X X X X H H H H H H H H
3 13
A2 Y2 L X X X X X H H H H H H H H
12 H L L L L L L H H H H H H H
Y3 ACTIVE−LOW H L L L L H H L H H H H H H
11 OUTPUTS
Y4 H L L L H L H H L H H H H H
10 H L L L H H H H H L H H H H
Y5
H L L H L L H H H H L H H H
9 H L L H L H H H H H H L H H
Y6
7 H L L H H L H H H H H H L H
Y7 H L L H H H H H H H H H H L
H = high level (steady state)
6 L = low level (steady state)
CS1 X = don’t care
CHIP−
SELECT 4 PIN 16 = VCC
CS2
INPUTS PIN 8 = GND
5
CS3
PIN ASSIGNMENT

A0 1 16 VCC
A1 2 15 Y0
A2 3 14 Y1
CS2 4 13 Y2
CS3 5 12 Y3
CS1 6 11 Y4
Y7 7 10 Y5

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
GND 8 9 Y6

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Count* 30.5 ea.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Propagation Delay

ÎÎÎÎ
ÎÎÎ
1.5 ns

µW

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product .0075 pJ

*Equivalent to a two−input NAND gate.

http://onsemi.com
331
MC74HCT138A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iout DC Output Current, per Pin ± 25 mA cuit. For proper operation, Vin and
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW
tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, TSSOP or SOIC Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎ
ÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
Operating Temperature, All Package Types
0
– 55
VCC
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise and Fall Time (Figure 1)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 2.0 2.0 2.0 V
|Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 5.5 2.0 2.0 2.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 0.8 0.8 0.8 V
Voltage |Iout|  20 µA 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 µA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1 V
Voltage |Iout|  20 µA 5.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4.0 40 160 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current (per Package) Iout = 0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
∆ICC Additional Quiescent Supply Vin = 2.4 V, Any One Input ≥ − 55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Current Vin
i = VCC or GND
GND, Other Inputs
lout = 0 µA 5.5 2.9 2.4 mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
332
MC74HCT138A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A to Output Y 30 38 45 ns
tPHL (Figures 1 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, CS1 to Output Y

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
27 34 41 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Output Transition Time, CS2 or CS3 to Output Y

ÎÎÎÎ
ÎÎÎ
(Figures 3 and 4)
30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 15 19 22 ns
tTHL (Figures 2 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tr, tf
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Input Rise and Fall Time

ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance
500
10
500
10
500
10
ns
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 51 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

EXPANDED LOGIC DIAGRAM

15
Y0

14
Y1

13
1 Y2
A0

12
2 Y3
A1

11
Y4
3
A2

10
Y5
5
CS3
4 9
CS2 Y6

7
Y7

6
CS1

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333
MC74HCT138A

SWITCHING WAVEFORMS

tr tf
VALID VALID
3V
3V 2.7 V
INPUT CS1 1.3 V
INPUT A 1.3 V 0.3 V GND
GND
tPHL tPLH
tPLH tPHL
90%
OUTPUT Y 1.3 V
1.3 V 10%
OUTPUT Y
tTHL tTLH

Figure 1. Figure 2.

tr tf
3V
2.7 V
INPUT 1.3 V
CS2, CS3 0.3 V GND
tPHL tPLH

90%
OUTPUT Y 1.3 V
10%

tTHL tTLH

Figure 3.

TEST CIRCUIT

TEST POINT

OUTPUT
DEVICE
UNDER
TEST CL*

*Includes all probe and jig capacitance

Figure 4.

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334
MC74HCT14A

Hex Schmitt−Trigger
Inverter with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
http://onsemi.com
The MC74HCT14A may be used as a level converter for interfacing
TTL or NMOS outputs to high−speed CMOS inputs. MARKING
The HCT14A is useful to “square up” slow input rise and fall times. DIAGRAMS
Due to the hysteresis voltage of the Schmitt trigger, the HCT14A finds
14
applications in noisy environments.
PDIP−14
• Output Drive Capability: 10 LSTTL Loads N SUFFIX MC74HCT14AN
AWLYYWW
• TTL/NMOS−Compatible Input Levels
CASE 646
1
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 4.5 to 5.5 V 14
• Low Input Current: 1.0 A SOIC−14 HCT14A
• In Compliance with the Requirements Defined by JEDEC Standard D SUFFIX AWLYWW
CASE 751A
No. 7A 1
• Chip Complexity: 72 FETs or 18 Equivalent Gates
14

TSSOP−14 HCT
DT SUFFIX 14A
CASE 948G ALYW

14
EIAJ−14
F SUFFIX HCT14A
CASE 965 AWLYWW

A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week

ORDERING INFORMATION
Device Package Shipping
MC74HCT14AN PDIP−14 2000/Box
MC74HCT14AD SOIC−14 55/Rail
MC74HCT14ADR2 SOIC−14 2500/Reel
MC74HCT14ADTR2 TSSOP−14 2000/Reel
MC74HCT14AFEL EIAJ−14 2000/Reel

 Semiconductor Components Industries, LLC, 2003 335 Publication Order Number:


June, 2003 − Rev. 9 MC74HCT14A/D
MC74HCT14A

A1 1 14 VCC
Y1 2 13 A6 FUNCTION TABLE
A2 3 12 Y6 Input Output
Y2 4 11 A5 A Y
A3 5 10 Y5 L H
H L
Y3 6 9 A4
GND 7 8 Y4

Figure 5. Pin Assignment

1 2
A1 Y1

3 4
A2 Y2

5 6
A3 Y3

Y=A
9 8
A4 Y4
PIN 14 = VCC
PIN 7 = GND
11 10
A5 Y5

13 12
A6 Y6

Figure 6. Logic Diagram

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336
MC74HCT14A

MAXIMUM RATINGS (Note 1)


Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) 0.5 to 7.0 V
VI DC Input Voltage (Referenced to GND) 0.5 to VCC 0.5 V
VO DC Output Voltage (Referenced to GND) 0.5 to VCC 0.5 V
IIK DC Input Diode Current 20 mA
IOK DC Output Diode Current 25 mA
IO DC Output Sink Current 25 mA
ICC DC Supply Current per Supply Pin 50 mA
IGND DC Ground Current per Ground Pin 50 mA
TSTG Storage Temperature Range 65 to 150 C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C
TJ Junction Temperature under Bias 150 C
JA Thermal Resistance PDIP 78 C/W
SOIC 125
TSSOP 170
PD Power Dissipation in Still Air at 85C PDIP 750 mW
SOIC 500
TSSOP 450
MSL Moisture Sensitivity Level 1
FR Flammability Rating Oxygen Index: 30% − 35% UL−94−VO (0.125 in)
VESD ESD Withstand Voltage Human Body Model (Note 2) >4000 V
Machine Model (Note 3) >300
Charged Device Model (Note 4) >1000
ILatch−Up Latch−Up Performance Above VCC and Below GND at 85C (Note 5) 300 mA

1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated
conditions is not implied.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
6. For high frequency or heavy load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VI, VO DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
55 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types
tr, tf Input Rise and Fall Time (Figure 7) — (Note 7) ns

7. No Limit when VI 50% VCC, ICC > 1 mA.


8. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.

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337
MC74HCT14A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)


Temperature Limit
VCC 55C to 25C 85C 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VTmax ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Parameter
ÎÎÎ
ÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎ
Maximum Positive−Going
Test Conditions
VO = 0.1 V or VCC – 0.1 V
Volts
4.5
Min Max
1.9
Min Max
1.9
Min Max
1.9
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Input Threshold Voltage |Iout|  20 A 5.5 2.1 2.1 2.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VTmin Minimum Positive−Going VO = 0.1 V or VCC – 0.1 V 4.5 1.2 1.2 1.2 V
Input Threshold Voltage |Iout|  20 A 5.5 1.4 1.4 1.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VTmax

Î
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ ÎÎÎÎÎ
Maximum Negative−Going

ÎÎÎ
ÎÎÎÎÎ
Input Threshold Voltage
VO = 0.1 V or VCC – 0.1 V
|Iout|  20 A
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VTmin Minimum Negative−Going VO = 0.1 V or VCC – 0.1 V 4.5 0.5 0.5 0.5
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Input Threshold Voltage 5.5 0.6 0.6 0.6

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VH max Maximum Hysteresis VO = 0.1 V or VCC – 0.1 V 4.5 1.4 1.4 1.4
Voltage |Iout|  20 A 5.5 1.5 1.5 1.5

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
VH min

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Minimum Hysteresis

ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎÎ VO = 0.1 V or VCC – 0.1 V 4.5 0.4 0.4 0.4

ÎÎÎ
ÎÎ ÎÎÎÎÎ
Voltage |Iout|  20 A 5.5 0.4 0.4 04

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VOH Minimum High−Level VI < VTmin 4.5 4.4 4.4 4.4 V
Output Voltage |Iout|  20 A 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎ
VI < VTmin
|Iout|  4.0 mA
4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
VOL Maximum Low−Level VI ≥ VTmax 4.5 0.1 0.1 0.1 V
Output Voltage |Iout|  20 A 5.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ VI ≥ VTmax 4.5 0.26 0.33 0.4

ÎÎ ÎÎ
|Iout|  4.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
IIK
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Maximum Input
ÎÎ
ÎÎÎ
ÎÎÎÎÎ VI = VCC or GND 5.5 0.1 1.0 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Leakage Current
A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ ÎÎÎÎÎ
ICC Maximum Quiescent VI = VCC or GND 5.5 1.0 10 40
Supply Current Iout = 0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ ÎÎÎÎÎ
(per package)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICC Additional Quiescent VI = 2.4 V, Any One Input 5.5 2.9 2.4 mA
Supply Current VI = VCC or GND, Other Inputs

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎ
lout = 0 A

9. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50 pF; Input tr = tf = 6.0 ns)


Guaranteed Limit
55C to 25C 85C 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Symbol Parameter Test Conditions Figures Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎ ÎÎÎ
Maximum Propagation

ÎÎÎ
ÎÎÎÎÎ
ÎÎ
Delay, Input A to Output
VCC = 5.0 V  10%
CL = 50 pF, Input tr = tf = 6.0 ns
7&8 32 40 48 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Y (L to H)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎ ÎÎÎÎÎ
tTLH, Maximum Output VCC = 5.0 V  10% 7&8 15 19 22 ns
tTHL Transition Time, Any CL = 50 pF, Input tr = tf = 6.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
Output

10. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance, per Inverter (Note 11) 32 pF

11. Used to determine the no−load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

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338
MC74HCT14A

TEST POINT
tf tr
INPUT A 2.7 V 3V
OUTPUT
1.3 V DEVICE
0.3 V GND
tPLH tPHL UNDER
TEST CL*
90%
1.3 V
OUTPUT Y 10%

tTLH tTHL
*Includes all probe and jig capacitance.

Figure 7. Switching Waveforms Figure 8. Test Circuit

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339
MC74HCT244A
Octal 3−State Noninverting
Buffer/Line Driver/
Line Receiver with
LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS http://onsemi.com
The MC74HCT244A is identical in pinout to the LS244. This
device may be used as a level converter for interfacing TTL or NMOS MARKING
outputs to High−Speed CMOS inputs. The HCT244A is an octal DIAGRAMS
noninverting buffer line driver line receiver designed to be used with 20
3−state memory address drivers, clock drivers, and other bus−oriented PDIP−20
MC74HCT244AN
N SUFFIX
systems. The device has non−inverted outputs and two active−low CASE 738
AWLYYWW
20
output enables. 1
1
The HCT244A is the noninverting version of the HCT240. See also 20
HCT241. SOIC WIDE−20
HCT244A
• Output Drive Capability: 15 LSTTL Loads 20
1
DW SUFFIX
AWLYYWW
CASE 751D
• TTL NMOS−Compatible Input Levels
1
• Outputs Directly Interface to CMOS, NMOS, and TTL 20

• Operating Voltage Range: 4.5 to 5.5 V TSSOP−20 HCT


• Low Input Current: 1 µA 20 DT SUFFIX 244A
ALYW
1

CASE 948E
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A 1


A = Assembly Location
Chip Complexity: 112 FETs or 28 Equivalent Gates WL = Wafer Lot
LOGIC DIAGRAM YY = Year
WW = Work Week
2 18
A1 YA1
PIN ASSIGNMENT
4 16
A2 YA2 ENABLE A 1 20 VCC
6 14 A1 2 19 ENABLE B
A3 YA3
YB4 3 18 YA1
8 12
A4 YA4 A2 4 17 B4
DATA INPUTS NONINVERTING
11 9 OUTPUTS YB3 5 16 YA2
B1 YB1
A3 6 15 B3
13 7
B2 YB2 YB2 7 14 YA3

15 5 A4 8 13 B2
B3 YB3
YB1 9 12 YA4
17 3 GND 10 11 B1
B4 YB4

1 PIN 20 = VCC
OUTPUT ENABLE A
ENABLES ENABLE B 19 PIN 10 = GND
ORDERING INFORMATION
FUNCTION TABLE
Device Package Shipping
Inputs Outputs
Enable A, MC74HCT244AN PDIP−20 1440 / Box
Enable B A, B YA, YB MC74HCT244ADW SOIC−WIDE 38 / Rail
L L L MC74HCT244ADWR2 SOIC−WIDE 1000 / Reel
L H H
H X Z MC74HCT244ADT TSSOP−20 75 / Rail
Z = high impedance, X = don’t care MC74HCT244ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 340 Publication Order Number:


May, 2000 − Rev. 9 MC74HCT244A/D
MC74HCT244A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf ÎÎ
ÎÎÎÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time (Figure 1)
– 55
0
+ 125
500
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
V 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 2 2 2 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Input
|Iout|  20 µA
Vout = 0.1 V or VCC – 0.1 V
5.5
4.5
2
0.8
2
0.8
2
0.8 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 µA 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 µA 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.26 0.33 0.4
± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 5.5
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
IOZ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Three−State

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Leakage Current

ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
5.5 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vout = VCC or GND
µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4 40 160
Current (per Package) Iout = 0 µA

http://onsemi.com
341
MC74HCT244A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
∆ICC ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Additional Quiescent Supply Vin = 2.4 V, Any One Input ≥ −55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Current Vin
i = VCC or GND
GND, Other Inputs
lout = 0 µA 5.5 2.9 2.4 mA
NOTES:
1. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, A to YA or B to YB 20 25 30 ns
tPHL (Figures 1 and 3)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to YA or YB

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
26 33 39 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to YA or YB 22 28 33 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZH (Figures 2 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 12 15 18 ns
tTHL (Figures 1 and 3)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance (Output in
10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 55 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

SWITCHING WAVEFORMS

3V
tr tf ENABLE 1.3 V
INPUT 3V A OR B GND
2.7 V tPZL tPLZ
A OR B 1.3 V
0.3 V HIGH
GND
1.3 V IMPEDANCE
tPLH tPHL OUTPUT Y
OUTPUT 90% 10% VOL
1.3 V tPZH tPHZ
YA OR YB 90% VOH
10%
OUTPUT Y 1.3 V
tTLH tTHL HIGH
IMPEDANCE

Figure 1. Figure 2.

http://onsemi.com
342
MC74HCT244A

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Figure 4.

LOGIC DETAIL

TO THREE OTHER
A OR B INVERTERS

ONE OF 8
BUFFERS

VCC
DATA INPUT
A OR B

YA
OR
YB

ENABLE A OR ENABLE B

http://onsemi.com
343
MC74HCT245A
Octal 3−State Noninverting
Bus Transceiver with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT245A is identical in pinout to the LS245. This
device may be used as a level converter for interfacing TTL or NMOS
http://onsemi.com
outputs to High Speed CMOS inputs.
The MC74HCT245A is a 3−state noninverting transceiver that is MARKING
used for 2−way asynchronous communication between data buses. DIAGRAMS
The device has an active−low Output Enable pin, which is used to 20
place the I/O ports into high−impedance states. The Direction control PDIP−20
MC74HCT245AN
determines whether data flows from A to B or from B to A. N SUFFIX
AWLYYWW
• Output Drive Capability: 15 LSTTL Loads 20 CASE 738
1
• TTL/NMOS Compatible Input Levels 1
20
• Outputs Directly Interface to CMOS, NMOS and TTL SOIC WIDE−20
• Operating Voltage Range: 4.5 to 5.5 V 20
1
DW SUFFIX HCT245A
AWLYYWW
CASE 751D
• Low Input Current: 1.0 µA
1
• In Compliance with the Requirements Defined by JEDEC Standard 20
No. 7A TSSOP−20 HCT
• Chip Complexity: 304 FETs or 76 Equivalent Gates 20 DT SUFFIX 245A
1 CASE 948E ALYW
LOGIC DIAGRAM
2 18 1
A1 B1
3 17 A = Assembly Location
A2 B2
WL = Wafer Lot
4 16
A3 B3 YY = Year
A 5 15 B WW = Work Week
A4 B4
DATA 6 14 DATA
PORT A5 B5 PORT
7 13 PIN ASSIGNMENT
A6 B6
8 12
A7 B7 DIRECTION 1 20 VCC
9 11
A8 B8 A1 2 19 OUTPUT ENABLE

1 A2 3 18 B1
DIRECTION PIN 20 = VCC
19 A3 4 17 B2

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
OUTPUT ENABLE PIN 10 = GND
A4 5 16 B3

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Design Criteria Value Units
A5 6 15 B4

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Count*

ÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay
76

1.0
ea

ns
A6
A7
7
8
14
13
B5
B6

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ µW A8 9 12 B7

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0
GND 10 11 B8

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Speed Power Product 0.005 pJ
*Equivalent to a two−input NAND gate.
FUNCTION TABLE
ORDERING INFORMATION
Control Inputs
Device Package Shipping
Output
Enable Direction Operation MC74HCT245AN PDIP−20 1440 / Box
L L Data Transmitted from Bus B to Bus A MC74HCT245ADW SOIC−WIDE 38 / Rail

L H Data Transmitted from Bus A to Bus B MC74HCT245ADWR2 SOIC−WIDE 1000 / Reel

H X Buses Isolated (High−Impedance State) MC74HCT245ADT TSSOP−20 75 / Rail


X = Don’t Care MC74HCT245ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 344 Publication Order Number:


MaY, 2000 − Rev. 9 MC74HCT245A/D
MC74HCT245A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎ
ÎÎÎÎÎÎ
ÎÎ
ÎÎÎ
Parameter
DC Supply Voltage (Referenced to GND)
Min
4.5
Max
5.5
Unit
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎ
ÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
Operating Temperature, All Package Types
0
– 55
VCC
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise and Fall Time (Figure 1)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 2.0 2.0 2.0 V
Voltage |Iout|  20 µA 5.5 2.0 2.0 2.0

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
g

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
5.5 5.4 5.4 5.4
Vin = VIH or VIL

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1 V
Voltage |Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
g

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
5.5 0.1 0.1 0.1
Vin = VIH or VIL

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Current Vin = VCC or GND, Pins 1 or 19 5.5 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4.0 40 160 µA
Current (per Package) Iout = 0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IOZ

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Maximum Three−State

ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Leakage Current

ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
5.5 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vout = VCC or GND, I/O Pins
∆ICC ≥ −55C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Additional Quiescent Supply Vin = 2.4 V, Any One Input 25C to 125C
Current Vin
i = VCC or GND
GND, Other Inputs

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
lout = 0 µA 5.5 2.9 2.4 mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
345
MC74HCT245A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, A to B or B to A 22 28 33 ns
tPHL (Figures 1 and 3)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Direction or Output Enable to A or B

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
30 36 42 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to A or 8

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
30 36 42 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time. any Output 12 15 18 ns
tTHL (Figures 1 and 3)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Input Capacitance (Pin 1 or 19)

ÎÎÎÎ
ÎÎÎ
Maximum Three−State I/O Capacitance, (I/O in High−Impedance
10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
State)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 97 pF


2
* Used to determine the no−load dynamic power consumption: PD = CPD VCC f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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346
MC74HCT245A

SWITCHING WAVEFORMS

3.0 V
DIRECTION 1.3 V 1.3 V
GND
3.0 V
tr tf OUTPUT 1.3 V
INPUT 3.0 V ENABLE GND
2.7 V
A OR B 1.3 V tPZL tPLZ
0.3 V GND HIGH
tPLH tPHL 1.3 V IMPEDANCE
A OR B
OUTPUT 90% 10% VOL
1.3 V tPZH tPHZ
B OR A VOH
10% 90%
A OR B 1.3 V
tTLH tTHL HIGH
IMPEDANCE
Figure 1. Figure 2.

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

http://onsemi.com
347
MC74HCT245A

EXPANDED LOGIC DIAGRAM

2
A1
18
B1

3
A2
17
B2

4
A3
16
B3

5
A4
A
DATA 15
B4
PORT B
6 DATA
A5 PORT
14
B5

7
A6
13
B6

8
A7
12
B7

9
A8
11
B8

1
DIRECTION

19
OUTPUT ENABLE

http://onsemi.com
348
MC74HCT273A

Octal D Flip−Flop with


Common Clock and Reset
with LSTTL−Compatible
Inputs
High−Performance Silicon−Gate CMOS http://onsemi.com

The MC74HCT273A may be used as a level converter for MARKING


interfacing TTL or NMOS outputs to High−Speed CMOS inputs. DIAGRAMS
20
The HCT273A is identical in pinout to the LS273.
PDIP−20
This device consists of eight D flip−flops with common Clock and MC74HCT273AN
N SUFFIX
Reset inputs. Each flip−flop is loaded with a low−to−high transition of AWLYYWW
20 CASE 738
the Clock input. Reset is asynchronous and active low. 1
1
• Output Drive Capability: 10 LSTTL Loads 20
• TTL/NMOS Compatible Input Levels 20
SOIC WIDE−20
DW SUFFIX HCT273A
• Outputs Directly Interface to CMOS, NMOS and TTL 1 CASE 751D AWLYYWW

• Operating Voltage Range: 4.5 to 5.5 V 1


• Low Input Current: 1.0 µA A = Assembly Location
• In Compliance with the Requirements Defined by JEDEC Standard WL = Wafer Lot
YY = Year
No. 7A WW = Work Week
• Chip Complexity: 284 FETs or 71 Equivalent Gates
LOGIC DIAGRAM PIN ASSIGNMENT

3 2 RESET 1 20 VCC
D0 Q0
4 5 Q0 2 19 Q7
D1 Q1
7 6 D0 3 18 D7
D2 Q2
8 9 D1 4 17 D6
DATA D3 Q3 NONINVERTING
INPUTS 13 12 Q1 5 16 Q6
D4 Q4 OUTPUTS
14 Q2 6 15 Q5
D5 15
Q5 D2 7 14 D5
17
D6 16
18 Q6 D3 8 13 D4
D7 19
11 Q7 Q3 9 12 Q4
CLOCK
GND 10 11 CLOCK

PIN 20 = VCC
1 PIN 10 = GND
RESET
FUNCTION TABLE ORDERING INFORMATION
Inputs Output Device Package Shipping
Reset Clock D Q MC74HCT273AN PDIP−20 1440 / Box
L X X L MC74HCT273ADW SOIC−WIDE 38 / Rail
H H H
H L L MC74HCT273ADWR2 SOIC−WIDE 1000 / Reel
H L X No Change
H X No Change

X = Don’t Care
Z = High Impedance

 Semiconductor Components Industries, LLC, 2000 349 Publication Order Number:


March, 2000 − Rev. 8 MC74HCT273A/D
MC74HCT273A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature – 65 to + 150 C Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds C
(SOIC or Plastic DIP) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
Î ÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time (Figure 1) 0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 0.8 0.8 0.8 V
|Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 µA 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 µA 5.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
5.5 4.0 40 160 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
∆ICC Additional Quiescent Supply Vin = 2.4 V, Any One Input ≥ −55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Current Vin
i = VCC or GND
GND, Other Inputs
lout = 0 µA 5.5 2.9 2.4 mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
350
MC74HCT273A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Fig. 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 1, 4 30 24 20 MHz

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Clock to Q 1, 4 25 28 35 ns
tPHL

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Propagation Delay, Reset to Q

ÎÎÎÎ
ÎÎÎ
Maximum Output Transition Time, Any Output
2, 4
1, 5
25
18
28
20
35
22
ns
ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Gate)* 30 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Î ÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎ
– 55 to 25C  85C  125C

Symbol

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
Parameter
Minimum Setup Time, Data to Clock
Fig.
3
Min
10
Max Min
12
Max Min
15
Max Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
th
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎÎÎÎ
ÎÎ
Î ÎÎÎ
Minimum Hold Time, Clock to Data

ÎÎ
ÎÎÎ
3 3.0 3.0 3.0 ns
trec

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
Minimum Recovery Time, Set or Reset Inactive to Clock

ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Minimum Pulse Width, Clock
2
1
5.0
12
5.0
15
5.0
18
ns
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
Minimum Pulse Width, Set or Reset 2 12 15 18 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
Maximum Input Rise and Fall Times 1 500 500 500 ns

http://onsemi.com
351
MC74HCT273A

SWITCHING WAVEFORMS

tr tf tw
3.0 V 3.0 V
2.7 V RESET 1.3 V
CLOCK 1.3 V
0.3 V GND GND
tw tPHL

1/fmax 1.3 V
Q
tPLH tPHL
90% trec
Q 1.3 V 3.0 V
10% CLOCK 1.3 V
tTLH tTHL GND

Figure 1. Figure 2.

TEST POINT

VALID OUTPUT
3.0 V DEVICE
DATA 1.3 V UNDER
GND TEST CL*
tsu th
3.0 V
1.3 V
CLOCK GND
*Includes all probe and jig capacitance
Figure 3. Figure 4. Test Circuit

EXPANDED LOGIC DIAGRAM

C 2
3 Q Q0
D0 DR

C 5
4 Q Q1
D1 DR

C 6
7 Q Q2
D2 DR

C 9
8 Q Q3
D3 DR NONINVERTING
DATA
OUTPUTS
INPUTS C 12
13 Q Q4
D4 DR

C 15
14 Q Q5
D5 DR

C 16
17 Q Q6
D6 DR

C 19
18 Q Q7
D7 DR

11
CLOCK

1
RESET

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352
MC74HCT373A

Octal 3−State Noninverting


Transparent Latch with
LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS
http://onsemi.com
The MC74HCT373A may be used as a level converter for MARKING
interfacing TTL or NMOS outputs to High−Speed CMOS inputs. DIAGRAMS
The HCT373A is identical in pinout to the LS373. 20
The eight latches of the HCT373A are transparent D−type latches. PDIP−20
While the Latch Enable is high the Q outputs follow the Data Inputs. MC74HCT373AN
N SUFFIX
AWLYYWW
When Latch Enable is taken low, data meeting the setup and hold 20 CASE 738
times becomes latched. 1 1
The Output Enable does not affect the state of the latch, but when 20
Output Enable is high, all outputs are forced to the high−impedance SOIC WIDE−20
20 DW SUFFIX HCT373A
state. Thus, data may be latched even when the outputs are not 1 AWLYYWW
CASE 751D
enabled.
1
The HCT373A is identical in function to the HCT573A, which has 20
the input pins on the opposite side of the package from the output pins.
TSSOP−20 HCT
This device is similar in function to the HCT533A, which has 20 373A
DT SUFFIX
inverting outputs. 1 CASE 948E ALYW
• Output Drive Capability: 15 LSTTL Loads 1
• TTL/NMOS−Compatible Input Levels
A = Assembly Location
• Outputs Directly Interface to CMOS, NMOS, and TTL WL = Wafer Lot
• Operating Voltage Range: 4.5 to 5.5 V YY = Year
WW = Work Week
• Low Input Current: 1.0 A
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
ORDERING INFORMATION
• Chip Complexity: 196 FETs or 49 Equivalent Gates
Device Package Shipping
MC74HCT373AN PDIP−20 1440 / Box
MC74HCT373ADW SOIC−WIDE 38 / Rail
MC74HCT373ADWR2 SOIC−WIDE 1000 / Reel
MC74HCT373ADT TSSOP−20 75 / Rail
MC74HCT373ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2003 353 Publication Order Number:


January, 2003 − Rev. 10 MC74HCT373A/D
MC74HCT373A

PIN ASSIGNMENT
OUTPUT 1 20 VCC
ENABLE
Q0 2 19 Q7
LOGIC DIAGRAM
D0 3 18 D7
D1 4 17 D6
3 2
D0 Q0 Q1 5 16 Q6
4 5
D1 Q1 Q2 6 15 Q5
7 6
D2 Q2 D2 7 14 D5
DATA 8 9 D3 8 13 D4
D3 Q3 NONINVERTING
INPUTS 13 12
D4 Q4 OUTPUTS Q3 9 12 Q4
14 15 GND 10 11 LATCH
D5 Q5 ENABLE
17 16
D6 Q6
18 19
FUNCTION TABLE
D7 Q7
Inputs Output
Output Latch
11 PIN 20 = VCC Enable Enable D Q
LATCH ENABLE
1 PIN 10 = GND
OUTPUT ENABLE L H H H
L H L L
L L X No Change
H X X Z

X = don’t care

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Z = high impedance

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Count* 49 ea.

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay 1.5 ns

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0 W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product 0.0075 pJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Equivalent to a two−input NAND gate.

http://onsemi.com
354
MC74HCT373A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500
450 level (e.g., either GND or VCC).
TSSOP Package†

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 °C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
°C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/°C from 65° to 125°C
SOIC Package: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf ÎÎ
ÎÎÎÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time (Figure 1)
– 55
0
+ 125
500
°C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
V 25°C  85°C  125°C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 2.0 2.0 2.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Input
|Iout|  20 A

Vout = 0.1 V or VCC – 0.1 V


5.5

4.5
2.0

0.8
2.0

0.8
2.0

0.8 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 A 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 A 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1 V
|Iout|  20 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 5.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage Cur-

ÎÎÎÎÎÎÎÎÎ
rent

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Output in High−Impedance State 5.5 ± 0.5 ± 5.0 ± 10 A
Leakage Current Vin = VIL or VIH

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 A
5.5 4.0 40 160 A

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355
MC74HCT373A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Additional Quiescent Supply Vin = 2.4 V, Any One Input 5.5 ≥ −55°C 25°C to 125°C mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Current Vin = VCC or GND,
GND Other Inputs
lout = 0 A 2.9 2.4

NOTE: 1. Total Supply Current = ICC + ICC.


NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
– 55 to
25°C  85°C  125°C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input D to Q 28 35 42 ns
tPHL (Figures 1 and 5)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Latch Enable to Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 5)
32 40 48 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to Q 30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHZ (Figures 3 and 6)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to Q 35 44 53 ns
tPZH (Figures 3 and 6)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 5)
12 15 18 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cout Maximum Three−State Output Capacitance 15 15 15 pF
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Latch)* 65 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to
Symbol Parameter 25°C  85°C  125°C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tsu
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Minimum Setup Time, Input D to Latch Enable

ÎÎÎÎ
(Figure 4)

ÎÎÎ
10 13 15 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
th Minimum Hold Time, Latch Enable to Input D 10 13 15 ns
(Figure 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tw
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Minimum Pulse Width, Latch Enable

ÎÎÎÎ
(Figure 2)
ÎÎÎ
12 15 18 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tr, tf
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
(Figure 1)
ÎÎÎ
Maximum Input Rise and Fall Times

ÎÎÎÎ
ÎÎÎ
500 500 500 ns

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356
MC74HCT373A

EXPANDED LOGIC DIAGRAM

D0 D1 D2 D3 D4 D5 D6 D7
3 4 7 8 13 14 17 18
D Q D Q D Q D Q D Q D Q D Q D Q

LE LE LE LE LE LE LE LE

LATCH 11
ENABLE

OUTPUT 1
ENABLE
2 5 6 9 12 15 16 19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7

SWITCHING WAVEFORMS

tr tf tw
3V 3V
2.7 V
INPUT D 1.3 V LATCH ENABLE 1.3 V 1.3 V
0.3 V GND GND
tPLH tPHL tPLH tPHL
90%
Q 1.3 V
10%
Q 1.3 V
tTLH tTHL

Figure 1. Figure 2.

3V
OUTPUT
1.3 V
ENABLE
GND VALID
tPZL tPLZ 3V
HIGH
INPUT D 1.3 V
IMPEDANCE
Q 1.3 V GND
10% VOL tsu th
tPZH tPHZ 3V
VOH LATCH ENABLE 1.3 V
90%
Q 1.3 V GND
HIGH
IMPEDANCE

Figure 3. Figure 4.

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357
MC74HCT373A

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT 1 k
OUTPUT TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH.
CL* TEST CL*
TEST

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 5. Figure 6.

http://onsemi.com
358
MC74HCT374A

Octal 3−State Noninverting


D Flip−Flop with
LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT374A may be used as a level converter for http://onsemi.com
interfacing TTL or NMOS outputs to High−Speed CMOS inputs. MARKING
The HCT374A is identical in pinout to the LS374. DIAGRAMS
Data meeting the setup and hold time is clocked to the outputs with 20
the rising edge of Clock. The Output Enable does not affect the state of PDIP−20
the flip−flops, but when Output Enable is high, the outputs are forced MC74HCT374AN
N SUFFIX
AWLYYWW
to the high−impedance state. Thus, data may be stored even when the 20 CASE 738
outputs are not enabled. 1 1
The HCT374A is identical in function to the HCT574A, which has 20
the input pins on the opposite side of the package from the output pins. SOIC WIDE−20
20 DW SUFFIX HCT374A
This device is similar in function to the HCT534A, which has 1 AWLYYWW
CASE 751D
inverting outputs.
1
• Output Drive Capability: 15 LSTTL Loads 20

• TTL/NMOS−Compatible Input Levels TSSOP−20 HCT


• Outputs Directly Interface to CMOS, NMOS, and TTL
20
1
DT SUFFIX 374A
ALYW
CASE 948E
• Operating Voltage Range: 4.5 to 5.5 V
1
• Low Input Current: 1.0 µA

A = Assembly Location
In Compliance with the Requirements Defined by JEDEC Standard WL = Wafer Lot
No. 7A YY = Year
• Chip Complexity: 276 FETs or 69 Equivalent Gates WW = Work Week

• Improvements over HCT374


— Improved Propagation Delays ORDERING INFORMATION
— 50% Lower Quiescent Power
Device Package Shipping
— Improved Input Noise and Latchup Immunity
MC74HCT374AN PDIP−20 1440 / Box
MC74HCT374ADW SOIC−WIDE 38 / Rail
MC74HCT374ADWR2 SOIC−WIDE 1000 / Reel
MC74HCT374ADT TSSOP−20 75 / Rail
MC74HCT374ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 359 Publication Order Number:


May, 2000 − Rev. 9 MC74HCT374A/D
MC74HCT374A

PIN ASSIGNMENT
OUTPUT
1 20 VCC
ENABLE
Q0 2 19 Q7
LOGIC DIAGRAM D0 3 18 D7
D1 4 17 D6
3 2
D0 Q0
Q1 5 16 Q6
4 5
D1 Q1
Q2 6 15 Q5
7 6
D2 Q2
D2 7 14 D5
8 9
DATA D3 Q3
NONINVERTING D3 8 13 D4
INPUTS 13 12
D4 Q4 OUTPUTS
Q3 9 12 Q4
14 15
D5 Q5
GND 10 11 CLOCK
17 16
D6 Q6
18 19
D7 Q7

CLOCK
11 FUNCTION TABLE
Inputs Output
Output
PIN 20 = VCC
1 Enable Clock D Q
PIN 10 = GND
OUTPUT ENABLE
L H H
L L L
L L,H, X No Change
H X X Z

X = don’t care

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Z = high impedance

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units
Internal Gate Count* 69 ea.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay 1.5 ns

µW

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product .0075 pJ
*Equivalent to a two−input NAND gate.

http://onsemi.com
360
MC74HCT374A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf ÎÎ
ÎÎÎÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time (Figure 1)
– 55
0
+ 125
500
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
V 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions Unit
VIH Minimum High−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 2.0 2.0 2.0 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VIL ÎÎÎÎ
Voltage

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Input
|Iout|  20 µA
Vout = 0.1 V or VCC – 0.1 V
5.5
4.5
2.0
0.8
2.0
0.8
2.0
0.8 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 µA 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 µA 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.26 0.33 0.4
± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 5.5
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
IOZ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Three−State

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Leakage Current

ÎÎÎ
Output in High−Impedance State
Vin = VIL or VIH
5.5 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vout = VCC or GND
µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4.0 40 160
Current (per Package) Iout = 0 µA

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361
MC74HCT374A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
∆ICC ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Additional Quiescent Supply Vin = 2.4 V, Any One Input ≥ −55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Current Vin = VCC or GND,
GND Other Inputs
lout = 0 µA 5.5 2.9 2.4 mA
NOTE: 1. Total Supply Current = ICC + Σ∆ICC.
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
– 55 to
25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 30 24 20 MHz
(Figures 1 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Clock to Q

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
31 39 47 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHZ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 5)
30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to Q 30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZH (Figures 2 and 5)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 12 15 18 ns
tTHL (Figures 1 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance 10 10 10 pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Three−State Output Capacitance

ÎÎÎÎ
ÎÎÎ
(Output in High−Impedance State)
15 15 15

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
pF

Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Flip−Flop)* 65 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Data to Clock 12 15 18 ns
(Figure 3)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
th
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Minimum Hold Time, Clock to Data

ÎÎÎÎ
(Figure 3)

ÎÎÎ
5.0 5.0 5.0 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Clock 12 15 18 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figure 1)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tr, tf Maximum Input Rise and Fall Times 500 500 500 ns
(Figure 1)

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MC74HCT374A

SWITCHING WAVEFORMS

tr tf 3V
VCC OUTPUT 1.3 V
CLOCK 2.7 V
1.3 V ENABLE GND
0.3 V GND tPZL tPLZ
tw HIGH
IMPEDANCE
1/fmax Q 1.3 V
10% VOL
tPLH tPHL tPZH tPHZ
90% VOH
1.3 V 90%
Q 10% Q 1.3 V HIGH
tTLH tTHL IMPEDANCE

Figure 1. Figure 2.

VALID
DATA 3V
1.3 V
GND
tsu th
3V
CLOCK 1.3 V
GND

Figure 3.

TEST CIRCUITS

TEST POINT TEST POINT


CONNECT TO VCC WHEN
OUTPUT OUTPUT 1 kΩ
TESTING tPLZ AND tPZL
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ AND tPZH
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 4. Figure 5.

EXPANDED LOGIC DIAGRAM

D0 D1 D2 D3 D4 D5 D6 D7
3 4 7 8 13 14 17 18
D Q D Q D Q D Q D Q D Q D Q D Q

C C C C C C C C

11
CLOCK

OUTPUT 1
ENABLE 2 5 6 9 12 15 16 19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7

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MC74HCT541A

Octal 3−State Non−Inverting


Buffer/Line Driver/
Line Receiver With
LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS http://onsemi.com

The MC74HCT541A is identical in pinout to the LS541. This MARKING


device may be used as a level converter for interfacing TTL or NMOS DIAGRAMS
20
outputs to high speed CMOS inputs.
PDIP−20
The HCT541A is an octal non−inverting buffer/line driver/line MC74HCT541AN
N SUFFIX
receiver designed to be used with 3−state memory address drivers, AWLYYWW
20 CASE 738
clock drivers, and other bus−oriented systems. This device features 1
1
inputs and outputs on opposite sides of the package and two ANDed 20
active−low output enables. SOIC WIDE−20
HCT541A
• Output Drive Capability: 15 LSTTL Loads
20
1
DW SUFFIX
CASE 751D AWLYYWW
• TTL/NMOS−Compatible Input Levels 1
• Outputs Directly Interface to CMOS, NMOS and TTL A = Assembly Location
• Operating Voltage Range: 4.5 to 5.5V WL = Wafer Lot
• Low Input Current: 1µA YY = Year
WW = Work Week
• In Compliance With the JEDEC Standard No. 7A Requirements
• Chip Complexity: 134 FETs or 33.5 Equivalent Gates
ORDERING INFORMATION
LOGIC DIAGRAM Device Package Shipping
MC74HCT541AN PDIP−20 1440 / Box
2 18
A1 Y1 MC74HCT541ADW SOIC−WIDE 38 / Rail
3 17 MC74HCT541ADWR2 SOIC−WIDE 1000 / Reel
A2 Y2

4 16 FUNCTION TABLE
A3 Y3
Inputs
Output Y
5 15 OE1 OE2 A
Data A4 Y4 Non−Inverting
Inputs Outputs L L L L
6 14
A5 Y5 L L H H
H X X Z
7 13
A6 Y6 X H X Z
Z = High Impedance
8 12 X = Don’t Care
A7 Y7

9 11
Pinout: 20−Lead Packages (Top View)
A8 Y8
VCC OE2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
1 20 19 18 17 16 15 14 13 12 11
Output OE1
OE2 PIN 20 = VCC
Enables
19 PIN 10 = GND

1 2 3 4 5 6 7 8 9 10
OE1 A1 A2 A3 A4 A5 A6 A7 A8 GND

 Semiconductor Components Industries, LLC, 2000 364 Publication Order Number:


March, 2000 − Rev. 2 MC74HCT541A/D
MC74HCT541A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature Range – 65 to + 150 C Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds C
Plastic DIP or SOIC Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
Î ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎ
ÎÎ
ÎÎÎ
Operating Temperature Range, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎ
ÎÎÎ
Input Rise/Fall Time (Figure 1)

DC CHARACTERISTICS (Voltages Referenced to GND)


0 500 ns

Guaranteed Limit
VCC
Symbol Parameter Condition V −55 to 25°C ≤85°C ≤125°C Unit
VIH Minimum High−Level Input Vout = 0.1V or VCC − 0.1V 4.5 2.0 2.0 2.0 V
Voltage |Iout| ≤ 20µA 5.5 2.0 2.0 2.0
VIL Maximum Low−Level Input Vout = 0.1V or VCC − 0.1V 4.5 0.8 0.8 0.8 V
Voltage |Iout| ≤ 20µA 5.5 0.8 0.8 0.8
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout| ≤ 20µA 5.5 5.4 5.4 5.4
Vin = VIH or VIL |Iout| ≤ 6.0mA 4.5 3.98 3.84 3.70
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1 V
Voltage |Iout| ≤ 20µA 5.5 0.1 0.1 0.1
Vin = VIH or VIL |Iout| ≤ 6.0mA 4.5 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 µA
IOZ Maximum Three−State Leakage Output in High Impedance State 5.5 ±0.5 ±5.0 ±10.0 µA
Current Vin = VIL or VIH
Vout = VCC or GND
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4 40 160 µA
Current (per Package) Iout = 0µA

∆ICC Additional Quiescent Supply Vin = 2.4V, Any One Input ≥ −55°C 25 to 125°C
Current Vin = VCC or GND
GND, Oth
Other IInputs
t
Iout = 0µA 5.5 2.9 2.4 mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.

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MC74HCT541A

AC CHARACTERISTICS (VCC = 5.0V, CL = 50 pF, Input tr = tf = 6 ns)


Guaranteed Limit
Symbol Parameter −55 to 25°C ≤85°C ≤125°C Unit
tPLH, Maximum Propagation Delay, Input A to Output Y 23 28 32 ns
tPHL (Figures 1 and 3)
tPLZ, Maximum Propagation Delay, Output Enable to Output Y 30 34 38 ns
tPHZ (Figures 2 and 4)
tPZL, Maximum Propagation Delay, Output Enable to Output Y 30 34 38 ns
tPZH (Figures 2 and 4)
tTLH, Maximum Output Transition Time, Any Output 12 15 18 ns
tTHL (Figures 1 and 3)
Cin Maximum Input Capacitance 10 10 10 pF
Cout Maximum Three−State Output Capacitance (Output in High Impedance 15 15 15 pF
State)

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Buffer)* 55 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

SWITCHING WAVEFORMS

tr tf 3.0V
OE1 or OE2 1.3V 1.3V
90% 3.0V
GND
INPUT A 1.3V tPZL tPLZ
HIGH
10% GND IMPEDANCE
tPLH tPHL OUTPUT Y 1.3V
10%
90% VOL
1.3V tPZH tPHZ
OUTPUT Y
10% 90% VOH
OUTPUT Y
tTHL 1.3V
tTLH
HIGH
IMPEDANCE
Figure 1. Figure 2.

TEST CIRCUITS

TEST TEST
POINT POINT
CONNECT TO VCC WHEN
OUTPUT OUTPUT 1kΩ
TESTING tPLZ AND tPZL.
DEVICE DEVICE CONNECT TO GND WHEN
UNDER UNDER TESTING tPHZ and tPZH.
TEST CL* TEST CL*

*Includes all probe and jig capacitance *Includes all probe and jig capacitance

Figure 3. Figure 4.

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MC74HCT541A

PIN DESCRIPTIONS

INPUTS outputs are enabled and the device functions as a


A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8, non−inverting buffer. When a high voltage is applied to
9) — Data input pins. Data on these pins appear in either input, the outputs assume the high impedance state.
non−inverted form on the corresponding Y outputs, when
the outputs are enabled. OUTPUTS
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
CONTROLS 13, 12, 11) — Device outputs. Depending upon the state of
OE1, OE2 (PINS 1, 19) — Output enables (active−low). the output enable pins, these outputs are either
When a low voltage is applied to both of these pins, the non−inverting outputs or high−impedance outputs.

LOGIC DETAIL

To 7 Other
Buffers

VCC
One of Eight
Buffers

INPUT A
OUTPUT Y

OE1

OE2

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MC74HCT573A

Octal 3−State Noninverting


Transparent Latch with
LSTTL Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT573A is identical in pinout to the LS573. This http://onsemi.com
device may be used as a level converter for interfacing TTL or NMOS MARKING
outputs to High−Speed CMOS inputs. DIAGRAMS
These latches appear transparent to data (i.e., the outputs change 20
asynchronously) when Latch Enable is high. When Latch Enable goes PDIP−20
low, data meeting the setup and hold times becomes latched. MC74HCT573AN
N SUFFIX
AWLYYWW
The Output Enable input does not affect the state of the latches, but 20 CASE 738
when Output Enable is high, all device outputs are forced to the 1 1
high−impedance state. Thus, data may be latched even when the 20
outputs are not enabled. SOIC WIDE−20
20 DW SUFFIX HCT573A
The HCT573A is identical in function to the HCT373A but has the 1 AWLYYWW
CASE 751D
Data Inputs on the opposite side of the package from the outputs to
1
facilitate PC board layout. 20

• Output Drive Capability: 15 LSTTL Loads TSSOP−20 HCT


• TTL/NMOS−Compatible Input Levels 20 DT SUFFIX 573A
ALYW

1 CASE 948E
Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 4.5 to 5.5 V 1

• Low Input Current: 10 µA A = Assembly Location


WL = Wafer Lot
• In Compliance with the Requirements Defined by JEDEC Standard YY = Year
No. 7A WW = Work Week
• Chip Complexity: 234 FETs or 58.5 Equivalent Gates
— Improved Propagation Delays
— 50% Lower Quiescent Power ORDERING INFORMATION
Device Package Shipping
MC74HCT573AN PDIP−20 1440 / Box
MC74HCT573ADW SOIC−WIDE 38 / Rail
MC74HCT573ADWR2 SOIC−WIDE 1000 / Reel
MC74HCT573ADT TSSOP−20 75 / Rail
MC74HCT573ADTR2 TSSOP−20 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 368 Publication Order Number:


May, 2000 − Rev. 9 MC74HCT573A/D
MC74HCT573A

LOGIC DIAGRAM PIN ASSIGNMENT


2 19 OUTPUT
D0 Q0 1 20 VCC
ENABLE
3 18 D0 2 19 Q0
D1 Q1
4 17
D2 Q2 D1 3 18 Q1
DATA 5 16 NONINVERTING
D3 Q3 D2 4 17 Q2
INPUTS 6 15 OUTPUTS
D4 Q4 D3 5 16 Q3
7 14
D5 Q5 D4 6 15 Q4
8 13
D6 Q6
9 12 D5 7 14 Q5
D7 Q7
D6 8 13 Q6
11
LATCH ENABLE D7 9 12 Q7
PIN 20 = VCC LATCH
1 GND 10 11
OUTPUT ENABLE PIN 10 = GND ENABLE

FUNCTION TABLE
Inputs Output
Output Latch
Enable Enable D Q
L H H H
L H L L
L L X No Change
H X X Z

X = Don’t Care

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Z = High Impedance

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Count* 58.5 ea

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay 1.5 ns

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Power Dissipation

ÎÎÎÎ
ÎÎÎ
Speed Power Product
5.0

0.0075
µW

pJ
*Equivalent to a two−input NAND gate.

http://onsemi.com
369
MC74HCT573A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
(Plastic DIP, TSSOP or SOIC Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: −6.1 mW/°C from 65 to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎ
ÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
Operating Temperature, All Package Types
0
– 55
VCC
+ 125
V
C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎ
ÎÎ
ÎÎÎ
Input Rise and Fall Time (Figure 1) 0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Voltage
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 0.8 0.8 0.8 V
Voltage |Iout|  20 µA 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.26 0.33 0.4
± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Current Vin = VCC or GND 5.5
IOZ Maximum Three−State Output in High−Impedance State 5.5 ± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Leakage Current

ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIL or VIH
Vout = VCC or GND
µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 5.5 4.0 40 160
Current (per Package) Iout  0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
∆ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
Additional Quiescent Supply

ÎÎÎÎÎÎÎ
ÎÎÎ
Vin = 2.4 V, Any One Input
Vin = VCC or GND,
lout = 0 µA
GND Other Inputs
5.5
≥ – 55C

2.9
25C to 125C

2.4 mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
370
MC74HCT573A

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input D to Output Q 30 38 45 ns
tPHL (Figures 1 and 5)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Latch Enable to Q

ÎÎÎÎ
ÎÎÎ
(Figures 2 and 5)
30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TPLZ,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TPHZ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Propagation Delay, Output Enable to Q

ÎÎÎÎ
ÎÎÎ
(Figures 3 and 6)
28 35 42 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTZL, Maximum Propagation Delay, Output Enable to Q 28 35 42 ns
tTZH (Figures 3 and 6)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Output Transition Time, any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1 and 5)
12 15 18 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Cin
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Input Capacitance

ÎÎÎÎ
ÎÎÎ
Maximum Three−State Output Capacitance
10
15
10
15
10
15
pF
pF

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Output in High−Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 48 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
– 55 to 25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
Symbol Parameter Fig. Min Max Min Max Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
tsu Minimum Setup Time, Input D to Latch Enable 4 10 13 15 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
th Minimum Hold Time, Latch Enable to Input D 4 5.0 5.0 5.0 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
tw Minimum Pulse Width, Latch Enable 2 15 19 22 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
tr, tf Maximum Input Rise and Fall Times 1 500 500 500 ns

http://onsemi.com
371
MC74HCT573A

SWITCHING WAVEFORMS

3.0 V
LATCH
tr tf 1.3 V
ENABLE
3.0 V
2.7 V GND
INPUT D 1.3 V
0.3 V GND tw
tPLH tPHL
90% tPLH tPHL
Q 1.3 V
10%
tTLH tTHL Q 1.3 V

Figure 1. Figure 2.

OUTPUT 3.0 V
ENABLE 1.3 V VALID
GND 3.0 V
tPZL tPLZ INPUT D 1.3 V
HIGH GND
Q 1.3 V IMPEDANCE tSU th
10% VOL 3.0 V
tPZH tPHZ LATCH 1.3 V
90% VOH GND
ENABLE
Q 1.3 V
HIGH
IMPEDANCE
Figure 3. Figure 4.

TEST POINT EXPANDED LOGIC DIAGRAM


2
OUTPUT D0 D 19
Q Q0
DEVICE LE
UNDER 3
CL* D1 D 18
TEST Q Q1
LE
4
D2 D 17
Q Q2
LE
*Includes all probe and jig capacitance 5
D3 D 16
Q Q3
Figure 5. Test Circuit LE
6
D4 D 15
Q Q4
LE
7
D5 D 14
TEST POINT Q Q5
LE
CONNECT TO VCC WHEN 8
OUTPUT 1 kΩ D6
TESTING tPLZ AND tPZL. D 13
Q Q6
DEVICE CONNECT TO GND WHEN LE
UNDER TESTING tPHZ AND tPZH. 9
TEST CL* D7 D 12
Q Q7
LE

11
LATCH ENABLE
*Includes all probe and jig capacitance

1
OUTPUT ENABLE
Figure 6. Test Circuit

http://onsemi.com
372
MC74HCT574A

Octal 3−State Noninverting


D Flip−Flop with
LSTTL−Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT574A is identical in pinout to the LS574. This http://onsemi.com
device may be used as a level converter for interfacing TTL or NMOS MARKING
outputs to High Speed CMOS inputs. DIAGRAMS
Data meeting the setup time is clocked to the outputs with the rising 20
edge of the Clock. The Output Enable input does not affect the states PDIP−20
of the flip−flops, but when Output Enable is high, all device outputs MC74HCT574AN
N SUFFIX
AWLYYWW
are forced to the high−impedance state. Thus, data may be stored even 20 CASE 738
when the outputs are not enabled. 1 1
The HCT574A is identical in function to the HCT374A but has the 20
flip−flop inputs on the opposite side of the package from the outputs to SOIC WIDE−20
20 DW SUFFIX HCT574A
facilitate PC board layout. 1 AWLYYWW
CASE 751D
• Output Drive Capability: 15 LSTTL Loads 1
• TTL NMOS Compatible Input Levels A = Assembly Location
• Outputs Directly Interface to CMOS, NMOS and TTL WL = Wafer Lot
• Operating Voltage Range: 4.5 to 5.5 V
YY
WW
= Year
= Work Week
• Low Input Current: 1.0 µA
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A ORDERING INFORMATION
• Chip Complexity: 286 FETs or 71.5 Equivalent Gates Device Package Shipping
MC74HCT574AN PDIP−20 1440 / Box
MC74HCT574ADW SOIC−WIDE 38 / Rail
MC74HCT574ADWR2 SOIC−WIDE 1000 / Reel

 Semiconductor Components Industries, LLC, 2000 373 Publication Order Number:


March, 2000 − Rev. 8 MC74HCT574A/D
MC74HCT574A

LOGIC DIAGRAM PIN ASSIGNMENT


2 19 OUTPUT 1 20 VCC
D0 Q0
ENABLE
3 18
D1 Q1 D0 2 19 Q0
4 17
D2 Q2 D1 3 18 Q1
DATA 5 16 NON−
D3 Q3 D2 4 17 Q2
INPUTS 6 15 INVERTING
D4 Q4 OUTPUTS
7 14 D3 5 16 Q3
D5 Q5
8 13 D4 6 15 Q4
D6 Q6
9 12 D5 7 14 Q5
D7 Q7
D6 8 13 Q6
11
CLOCK
D7 9 12 Q7
PIN 20 = VCC
1 PIN 10 = GND GND 10 11 CLOCK
OUTPUT ENABLE

FUNCTION TABLE
Inputs Output
OE Clock D Q
L H H
L L L
L L,H, X No Change
H X X Z
X = don’t care

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Z = high impedance

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Design Criteria Value Units

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Count*

ÎÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay
71.5

1.5
ea

ns

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0 µW

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Speed Power Product
*Equivalent to a two−input NAND gate.
0.0075 pJ

http://onsemi.com
374
MC74HCT574A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 75 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature – 65 to + 150 C Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds C
(Plastic DIP or SOIC Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
Î ÎÎ
ÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
tr, tf Input Rise and Fall Time (Figure 1) 0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 0.8 0.8 0.8 V
|Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4
Voltage |Iout|  20 µA 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 3.98 3.84 3.7
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VIH or VIL 4.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage |Iout|  20 µA 5.5 0.1 0.1 0.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  6.0 mA 4.5 0.26 0.33 0.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Input Leakage

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Current
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
1. Output in high−impedance state.
Vin = VCC or GND
Iout = 0 µA 5.5 4.0 40 160 µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
375
MC74HCT574A

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IOZ Maximum Three−State Vin = VIL or VIH (Note 1) 5.5 − 0.5 – 5.0 – 10 µA
Leakage Vout = VCC or GND

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
∆ICC

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎ
Current ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Additional Quiescent Supply

ÎÎÎÎÎ
ÎÎÎ
Vin = 2.4 V, Any One Input
Vin
i = VCC or GND
lout = 0 µA
GND, Other Inputs
5.5
≥ – 55C

2.9
25C to 125C

2.4 mA
1. Output in high−impedance state.

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
– 55 to
 85C  125C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
fMAX Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 30 24 20 MHz
tPLH, Maximum Propagation Delay, Clock to Q 30 38 45 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tPHL
tPLZ, ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
(Figures 1 and 4)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Output Enable to Q 28 35 42 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPHZ (Figures 2 and 5)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPZH, Maximum Propagation Delay Time, Output Enable to Q 28 35 42 ns
tPZL (Figures 2 and 5)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH,

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎ
ÎÎÎ
(Figures 1, 2 and 4)
12 15 18 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTHL
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Flip−Flop)* 58 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎ – 55 to 25C
Guaranteed Limit
 85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
ÎÎÎ
ÎÎ
Parameter
Minimum Setup Time, Data to Clock
Fig.
3
Min
10
Max Min
13
Max Min
15
Max Unit
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
th
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎ
Minimum Hold Time, Clock to Data

ÎÎÎ
ÎÎ
Minimum Pulse Width, Clock
3
1
5.0
15
5.0
19
5.0
22
ns
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, If
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
Maximum Input Rise and Fall Times 1 500 500 500 ns

http://onsemi.com
376
MC74HCT574A

EXPANDED LOGIC DIAGRAM

D0 D1 D2 D3 D4 D5 D6 D7
2 3 4 5 6 7 8 9

11
CLOCK

D D D D D D D D
C C C C C C C C
Q Q Q Q Q Q Q Q

ENABLE 1
OUTPUT

19 18 17 16 15 14 13 12
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7

SWITCHING WAVEFORMS
tr tf
3.0 V 3.0 V
2.7 V OUTPUT
CLOCK 1.3 V 1.3 V
0.3 V GND ENABLE GND
tw tPZL tPLZ
HIGH
1/fmax
1.3 V IMPEDANCE
tPLH tPHL Q
10% VOL
90% tPZH tPHZ
Q 1.3 V 90% VOH
10% Q 1.3 V HIGH
tTLH tTHL IMPEDANCE

Figure 1. Figure 2.

TEST POINT

VALID OUTPUT
3.0 V DEVICE
1.3 V UNDER
DATA GND TEST CL*
tsu th
3.0 V
1.3 V
CLOCK GND
*Includes all probe and jig capacitance

Figure 3. Figure 4. Test Circuit

TEST POINT
CONNECT TO VCC WHEN
OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE CONNECT TO GND WHEN
UNDER TESTING tPHZ AND tPZH.
TEST CL*

*Includes all probe and jig capacitance

Figure 5. Test Circuit

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377
MC74HCT74A

Dual D Flip−Flop with Set


and Reset with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
http://onsemi.com
The MC74HCT74A is identical in pinout to the LS74. This device
may be used as a level converter for interfacing TTL or NMOS outputs MARKING
to High Speed CMOS inputs. DIAGRAMS
This device consists of two D flip−flops with individual Set, Reset, 14
and Clock inputs. Information at a D−input is transferred to the PDIP−14
N SUFFIX MC74HCT74AN
corresponding Q output on the next positive going edge of the clock CASE 646 AWLYYWW
input. Both Q and Q outputs are available from each flip−flop. The Set
1
and Reset inputs are asynchronous. 14
• Output Drive Capability: 10 LSTTL Loads SOIC−14
HCT74A
• TTL NMOS Compatible Input Levels D SUFFIX
CASE 751A
AWLYWW
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
• Operating Voltage Range: 4.5 to 5.5 V A = Assembly Location
• Low Input Current: 1.0 µA WL or L = Wafer Lot
YY or Y = Year
• In Compliance with the Requirements Defined by JEDEC Standard WW or W = Work Week
No. 7A PIN ASSIGNMENT
• Chip Complexity: 136 FETs or 34 Equivalent Gates
RESET 1 1 14 VCC
LOGIC DIAGRAM DATA 1 2 13 RESET 2
1 CLOCK 1 3 12 DATA 2
RESET 1
SET 1 4 11 CLOCK 2
2 5
DATA 1 Q1 Q1 5 10 SET 2
3 6 Q1 6 9 Q2
CLOCK 1 Q1
GND 7 8 Q2
4
SET 1
PIN 14 = VCC FUNCTION TABLE
13 PIN 7 = GND Inputs Outputs
RESET 2
Set Reset Clock Data Q Q
12 9
DATA 2 Q2 L H X X H L
8 H L X X L H
11
CLOCK 2 Q2 L L X X H* H*
H H H H L
10 H H L L H

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
SET 2
H H L X No Change

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
H H H X No Change
Design Criteria Value Units
H H X No Change

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Internal Gate Count*

ÎÎÎÎ
ÎÎÎ
34 ea. *Both outputs will remain high as long as Set and
Reset are low, but the output states are unpredict-

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Propagation Delay 1.5 ns able if Set and Reset go high simultaneously.

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Internal Gate Power Dissipation 5.0 µW

ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ORDERING INFORMATION
Speed Power Product .0075 pJ
Device Package Shipping
*Equivalent to a two−input NAND gate.
MC74HCT74AN PDIP−14 2000 / Box
MC74HCT74AD SOIC−14 55 / Rail
MC74HCT74ADR2 SOIC−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 378 Publication Order Number:


March, 2000 − Rev. 8 MC74HCT74A/D
MC74HCT74A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature – 65 to + 150 C Unused outputs must be left open.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds C
(Plastic DIP or SOIC Package) 260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: –10mW/C from 65 to 125C
SOIC Package: –7mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
4.5
0
5.5
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA
ÎÎÎ
ÎÎ
ÎÎÎ
Operating Temperature, All Package Types – 55 + 125 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise and Fall Time (Figure 1)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
0 500 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.1 V or VCC – 0.1 V
|Iout|  20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VIL Maximum Low−Level Input Vout = 0.1 V or VCC – 0.1 V 4.5 0.8 0.8 0.8 V
|Iout|  20 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Voltage 5.5 0.8 0.8 0.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOH Minimum High−Level Output Vin = VIH or VIL 4.5 4.4 4.4 4.4 V
Voltage |Iout|  20 µA 5.5 5.4 5.4 5.4

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA 4.5 3.98 3.84 3.7

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOL

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Low−Level Output

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Voltage

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = VIH or VIL
|Iout|  4.0 mA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.26 0.33 0.4
± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 5.5
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
5.5 2.0 20 80 µA

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
∆ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND,
GND Other Inputs
≥ −55C 25C to 125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ lout = 0 µA 5.5 2.9 2.4 mA

http://onsemi.com
379
MC74HCT74A

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).

http://onsemi.com
380
MC74HCT74A

AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)


Guaranteed Limit
– 55 to

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter 25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 30 24 20 MHz
(Figures 1 and 4)

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tPLH,
tPHL ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Clock to Q or Q
(Figures 1 and 4)
24 30 36 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tPLH,
tPHL ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Set or Reset to Q or Q

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figures 2 and 4)
24 30 36 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
tTLH,
tTHL ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Maximum Output Transition Time, Any Output

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(Figures 1 and 4)
15 19 22 ns

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Cin Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Enabled Output)* 32 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎ
ÎÎÎÎÎ
– 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
25C  85C  125C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
Symbol Parameter Fig. Min Max Min Max Min Max Units

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
tsu Minimum Setup Time, Data to Clock 3 15 19 22 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
th Minimum Hold Time, Clock to Data 3 3 3 3 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
trec Minimum Recovery Time, Set or Reset Inactive to Clock 2 6 8 9 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
tw Minimum Pulse Width, Clock 1 15 19 22 ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
tw Minimum Pulse Width, Set or Reset 2 15 19 22 ns
tr, tf Maximum Input Rise and Fall Times 1 500 500 500 ns

http://onsemi.com
381
MC74HCT74A

SWITCHING WAVEFORMS

tw
tr tf 3V
SET OR 1.3 V
2.7 V 3V GND
CLOCK RESET
1.3 V tPHL
0.3 V GND
tw Q OR Q 1.3 V

1/fmax tPLH

tPLH tPHL 1.3 V


Q OR Q
90% trec
Q OR Q 1.3 V
10% 3V
CLOCK 1.3 V
tTLH tTHL GND

Figure 1. Figure 2.

VALID
3V TEST POINT

DATA 1.3 V
OUTPUT
GND
DEVICE
tsu th UNDER
TEST CL*
3V
1.3 V GND
CLOCK

*Includes all probe and jig capacitance

Figure 3. Figure 4.

EXPANDED LOGIC DIAGRAM


4, 10
SET

2, 12 5, 9
DATA Q

3, 11
CLOCK

6, 8
Q

1, 13
RESET

http://onsemi.com
382
MC74HCU04A

Hex Unbuffered Inverter


High−Performance Silicon−Gate CMOS
The MC74HCU04A is identical in pinout to the LS04 and the
MC14069UB. The device inputs are compatible with standard CMOS
outputs; with pullup resistors, they are compatible with LSTTL
outputs. http://onsemi.com
This device consists of six single−stage inverters. These inverters MARKING
are well suited for use as oscillators, pulse shapers, and in many other DIAGRAMS
applications requiring a high−input impedance amplifier. For digital 14
applications, the HC04A is recommended. PDIP−14
MC74HCU04AN
• Output Drive Capability: 10 LSTTL Loads N SUFFIX
CASE 646 AWLYYWW
• Outputs Directly Interface to CMOS, NMOS, and TTL 1
• Operating Voltage Range: 2 to 6 V; 2.5 to 6 V in Oscillator 14
Configurations SOIC−14
HCU04A
• Low Input Current: 1 µA D SUFFIX
CASE 751A
AWLYWW
• High Noise Immunity Characteristic of CMOS Devices 1
• In Compliance with the Requirements Defined by JEDEC Standard 14
No. 7A HCU
TSSOP−14
• Chip Complexity: 12 FETs or 3 Equivalent Gates DT SUFFIX 04A
CASE 948G ALYW
LOGIC DIAGRAM
1
1 2 A = Assembly Location
A1 Y1
WL or L = Wafer Lot
YY or Y = Year
3 4 WW or W = Work Week
A2 Y2

5 6 PIN ASSIGNMENT
A3 Y3
Y=A A1 1 14 VCC
9 8 Y1 2 13 A6
A4 Y4
A2 3 12 Y6
11 10 Y2 4 11 A5
A5 Y5
A3 5 10 Y5
PIN 14 = VCC
13 12 PIN 7 = GND Y3 6 9 A4
A6 Y6
GND 7 8 Y4

FUNCTION TABLE

Inputs Outputs
A Y
ORDERING INFORMATION
L H
H L Device Package Shipping
MC74HCU04AN PDIP−14 2000 / Box
MC74HCU04AD SOIC−14 55 / Rail
MC74HCU04ADR2 SOIC−14 2500 / Reel
MC74HCU04ADT TSSOP−14 96 / Rail
MC74HCU04ADTR2 TSSOP−14 2500 / Reel

 Semiconductor Components Industries, LLC, 2000 383 Publication Order Number:


March, 2000 − Rev. 2 MC74HCU04A/D
MC74HCU04A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎ
Parameter Value Unit This device contains protection

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage
due to high static voltages or electric

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V fields. However, precautions must

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
be taken to avoid applications of any
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
voltage higher than maximum rated

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Iin DC Input Current, per Pin ± 20 mA voltages to this high−impedance cir-

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 25 mA
Vout should be constrained to the

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ICC DC Supply Current, VCC and GND Pins ± 50 mA range GND  (Vin or Vout)  VCC.

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air Plastic DIP† 750 mW tied to an appropriate logic voltage

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
SOIC Package† 500 level (e.g., either GND or VCC).
TSSOP Package† 450

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 C

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL

ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Lead Temperature, 1 mm from case for 10 Seconds

ÎÎÎÎÎ
ÎÎÎ
Plastic DIP, SOIC or TSSOP Package 260
*Maximum Ratings are those values beyond which damage to the device may occur.
C

Functional operation should be restricted to the Recommended Operating Conditions.


†Derating — Plastic DIP: –10mW/C from 65 to 125C
SOIC Package: –7mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
ÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎ
ÎÎÎ Parameter Min Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC

ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎ
ÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)

ÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎ
ÎÎÎÎÎÎ
Operating Temperature, All Package Types

ÎÎ
ÎÎÎ
Input Rise and Fall Time (Figure 1)
– 55

+ 125
No
C
ns

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎ
Limit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIH
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = 0.5 V*
|Iout|  20 µA
2.0
3.0
1.7
2.5
1.7
2.5
l.7
2.5
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 3.6 3.6 3.6
6.0 4.8 4.8 4.8

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VIL
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Low−Level Input

ÎÎÎÎ
ÎÎÎ
Vout = VCC – 0.5 V*
|Iout|  20 µA
2.0
3.0
0.3
0.5
0.3
0.5
0.3
0.5
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 0.8 0.8 0.8
6.0 1.1 1.1 1.1

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH

ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Voltage ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Minimum High−Level Output

ÎÎÎÎ
ÎÎÎ
Vin = GND
|Iout|  20 µA
2.0
4.5
6.0
1.8
4.0
5.5
1.8
4.0
5.5
1.8
4.0
5.5
V

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Vin = GND |Iout|  2.4 mA
|Iout|  4.0 mA
3.0
4.5
2.36
3.86
2.26
3.76
2.20
3.70

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  5.2 mA 6.0 5.36 5.26 5.20

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VOL Maximum Low−Level Output Vin = VCC 2.0 0.2 0.2 0.2 V
Voltage |Iout|  20 µA 4.5 0.5 0.5 0.5

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ Vin = VCC |Iout|  2.4 mA
6.0
3.0
0.5
0.32
0.5
0.32
0.5
0.32

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
|Iout|  4.0 mA 4.5 0.32 0.37 0.40
|Iout|  5.2 mA 6.0 0.32 0.37 0.40

http://onsemi.com
384
MC74HCU04A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Guaranteed Limit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
VCC – 55 to

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25C  85C  125C Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Iin Maximum Input Leakage Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA
Current

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Maximum Quiescent Supply

ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 1 10 40 µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*For VCC = 2.0 V, Vout = 0.2 V or VCC − 0.2 V.

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Symbol ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter
VCC
V
– 55 to
25C  85C  125C Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, Input A to Output Y 2.0 70 90 105 ns
tPHL (Figures 1 and 2) 3.0 40 45 50

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5
6.0
14
12
18
15
21
18

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 75 95 110 ns
tTHL (Figures 1 and 2) 3.0 27 32 36

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
4.5 15 19 22

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
6.0 13 16 19
Cin Maximum Input Capacitance — 10 10 10 pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

CPD Power Dissipation Capacitance (Per Inverter)* 15 pF


* Used to determine the no−load dynamic power consumption: PD = CPD VCC 2 f + I V
CC CC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).

http://onsemi.com
385
MC74HCU04A

TEST POINT
tr tf
VCC OUTPUT
90% DEVICE
INPUT A 50%
10% GND UNDER
TEST CL*
tPHL tPLH
90%
OUTPUT Y 50%
10%
tTHL tTLH *Includes all probe and jig capacitance

Figure 1. Switching Waveforms Figure 2. Test Circuit

LOGIC DETAIL
(1/6 of Device Shown)

VCC

A Y

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386
MC74HCU04A

TYPICAL APPLICATIONS

Crystal Oscillator Stable RC Oscillator

R2 1/6 HCU04A 1/6 HCU04A 1/6 HCU04A


Vout
R2 > > R1
C1 < C2
1/6 HCU04A C
R1

R2 R1

C1 C2

Vout

Schmitt Trigger High Input Impedance Single−Stage Amplifier


with a 2 to 6 V Supply Range

R2 VCC

R2 > 6R1 1 M 1/6 HCU04A


1/6 HCU04A 1/6 HCU04A
R1 INPUT OUTPUT
Vin Vout

1M

Multi−Stage Amplifier LED Driver

VCC +V

1/6 HCU04A 1/6 HCU04A 1/6 HCU04A 1/6 HCU04A


INPUT OUTPUT

For reduced power supply current, use high−efficiency LEDs


such as the Hewlett−Packard HLMP series or equivalent.

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387
CHAPTER 3
Case Outlines and Package Dimensions

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388
CASE OUTLINES AND PACKAGE DIMENSIONS

PDIP−14
CASE 646−06
ISSUE N
DATE 04 MAY 2004
1
SCALE 1:1

NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
14 8 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
B WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
1 7 MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.

A INCHES MILLIMETERS
DIM MIN MAX MIN MAX
F L A 0.715 0.770 18.16 18.80
B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
N D 0.015 0.021 0.38 0.53
C F 0.040 0.070 1.02 1.78
G 0.100 BSC 2.54 BSC
−T− H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38
SEATING
PLANE K 0.115 0.135 2.92 3.43
K J L 0.290 0.310 7.37 7.87
H G D 14 PL M M −−− 10  −−− 10 
N 0.015 0.039 0.38 1.01
0.13 (0.005) M

GENERIC
MARKING DIAGRAM*

14
XXXXXXXXXXXX
XXXXXXXXXXXX
STYLES ON NEXT PAGE AWLYYWWG
1

XXXXX = Specific Device Code


A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package

*This information is generic. Please refer to


device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.

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389
PDIP−14
CASE 646−06
ISSUE N
DATE 04 MAY 2004
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. COLLECTOR CANCELLED CANCELLED PIN 1. DRAIN
2. BASE 2. SOURCE
3. EMITTER 3. GATE
4. NO 4. NO
CONNECTION CONNECTION
5. EMITTER 5. GATE
6. BASE 6. SOURCE
7. COLLECTOR 7. DRAIN
8. COLLECTOR 8. DRAIN
9. BASE 9. SOURCE
10. EMITTER 10. GATE
11. NO 11. NO
CONNECTION CONNECTION
12. EMITTER 12. GATE
13. BASE 13. SOURCE
14. COLLECTOR 14. DRAIN

STYLE 5: STYLE 6: STYLE 7: STYLE 8:


PIN 1. GATE PIN 1. COMMON CATHODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION
2. DRAIN 2. ANODE/CATHODE 2. ANODE 2. CATHODE
3. SOURCE 3. ANODE/CATHODE 3. ANODE 3. CATHODE
4. NO CONNECTION 4. NO CONNECTION 4. NO CONNECTION 4. NO CONNECTION
5. SOURCE 5. ANODE/CATHODE 5. ANODE 5. CATHODE
6. DRAIN 6. NO CONNECTION 6. NO CONNECTION 6. NO CONNECTION
7. GATE 7. ANODE/CATHODE 7. ANODE 7. CATHODE
8. GATE 8. ANODE/CATHODE 8. ANODE 8. CATHODE
9. DRAIN 9. ANODE/CATHODE 9. ANODE 9. CATHODE
10. SOURCE 10. NO CONNECTION 10. NO CONNECTION 10. NO CONNECTION
11. NO CONNECTION 11. ANODE/CATHODE 11. ANODE 11. CATHODE
12. SOURCE 12. ANODE/CATHODE 12. ANODE 12. CATHODE
13. DRAIN 13. NO CONNECTION 13. NO CONNECTION 13. NO CONNECTION
14. GATE 14. COMMON ANODE 14. COMMON 14. COMMON ANODE
CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12:


PIN 1. COMMON CATHODE PIN 1. COMMON PIN 1. CATHODE PIN 1. COMMON CATHODE
2. ANODE/CATHODE CATHODE 2. CATHODE 2. COMMON ANODE
3. ANODE/CATHODE 2. ANODE/CATHODE 3. CATHODE 3. ANODE/CATHODE
4. NO CONNECTION 3. ANODE/CATHODE 4. CATHODE 4. ANODE/CATHODE
5. ANODE/CATHODE 4. ANODE/CATHODE 5. CATHODE 5. ANODE/CATHODE
6. ANODE/CATHODE 5. ANODE/CATHODE 6. CATHODE 6. COMMON ANODE
7. COMMON ANODE 6. NO CONNECTION 7. CATHODE 7. COMMON CATHODE
8. COMMON ANODE 7. COMMON ANODE 8. ANODE 8. ANODE/CATHODE
9. ANODE/CATHODE 8. COMMON 9. ANODE 9. ANODE/CATHODE
10. ANODE/CATHODE CATHODE 10. ANODE 10. ANODE/CATHODE
11. NO CONNECTION 9. ANODE/CATHODE 11. ANODE 11. ANODE/CATHODE
12. ANODE/CATHODE 10. ANODE/CATHODE 12. ANODE 12. ANODE/CATHODE
13. ANODE/CATHODE 11. ANODE/CATHODE 13. ANODE 13. ANODE/CATHODE
14. COMMON CATHODE 12. ANODE/CATHODE 14. ANODE 14. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE

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390
PDIP−16
CASE 648−08
ISSUE T
16 DATE 04 MAY 2004
1
SCALE 1:1

NOTES:
−A− 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
16 9 3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
B 4. DIMENSION B DOES NOT INCLUDE
1 8 MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.

F INCHES MILLIMETERS
C L DIM MIN MAX MIN MAX
A 0.740 0.770 18.80 19.55
S B 0.250 0.270 6.35 6.85
C 0.145 0.175 3.69 4.44
−T− SEATING D 0.015 0.021 0.39 0.53
PLANE F 0.040 0.70 1.02 1.77
G 0.100 BSC 2.54 BSC
H K M H 0.050 BSC 1.27 BSC
J
G J 0.008 0.015 0.21 0.38
D 16 PL K 0.110 0.130 2.80 3.30
L 0.295 0.305 7.50 7.74
0.25 (0.010) M T A M M 0 10  0 10 
S 0.020 0.040 0.51 1.01
STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. COMMON DRAIN
2. CATHODE 2. COMMON DRAIN GENERIC
3. CATHODE 3. COMMON DRAIN
4. CATHODE 4. COMMON DRAIN MARKING DIAGRAM*
5. CATHODE 5. COMMON DRAIN
6. CATHODE 6. COMMON DRAIN
7. CATHODE 7. COMMON DRAIN 16
8. CATHODE 8. COMMON DRAIN XXXXXXXXXXXX
9. ANODE 9. GATE
10. ANODE 10. SOURCE XXXXXXXXXXXX
11. ANODE 11. GATE AWLYYWWG
12. ANODE 12. SOURCE
13. ANODE 13. GATE
1
14. ANODE 14. SOURCE
15. ANODE 15. GATE
16. ANODE 16. SOURCE
XXXXX = Specific Device Code
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package

*This information is generic. Please refer to


device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.

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391
PDIP
CASE 724−03
ISSUE D DATE 07/15/1987

SCALE 1:1

−A− NOTES:
1. CHAMFERED CONT OUR OPT IONA L .
24 13 2. DIMENS ION L T O CENT ER OF L EA DS W HEN
F ORME D PARALLEL.
−B− 3. DIME NSIONING A ND T OL E RA NCING PE R A NSI
1 12 Y 14. 5M, 1982.
4. CONT ROL L ING DIME NSION: INCH.

INCHES MILLIMETERS
L DIM MIN MAX MIN MAX
C A 1.2301.26531.2532.13
B 0.2500.270 6.35 6.85
C 0.1450.175 3.69 4.44
−T− K NOTE 1 D 0.0150.020 0.38 0.51
SEATING E 0.050 BSC 1.27 BSC
PLANE N M F 0.0400.060 1.02 1.52
E G 0.100 BSC 2.54 BSC
G F J 24 PL J 0.0070.012 0.18 0.30
K 0.110 0.140 2.80 3.55
0.25 (0.010) M T B M L 0.300 BSC 7.62 BSC
D 24 PL
0 15 0 15 
M  
0.25 (0.010) M T A M N 0.0200.040 0.51 1.01

PDIP
CASE 738−03
ISSUE E DATE 06/26/1987

SCALE 1:1

−A−
NOTES:
1. DIMENSIONING A ND T OL ERA NCING PER
20 11 A NSI Y 14. 5M, 1982.
2. CONT ROL L ING DIME NSION: INCH.
B 3. DIMENSION L T O CENT ER OF L EA D WHEN
1 10 F ORME D PARALLEL.
4. DIME NSION B DOE S NOT INCL UDE MOL D
FLASH.
C L
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 1.010 1.070 25.6627.17
B 0.2400.260 6.10 6.60
−T− C 0.1500.180 3.81 4.57
K D 0.0150.022 0.39 0.55
SEATING
PLANE E 0.050 BSC 1.27 BSC
M
F 0.0500.070 1.27 1.77
E N G 0.100 BSC 2.54 BSC
J 0.0080.015 0.21 0.38
G F K 0.110 0.140 2.80 3.55
J 20 PL
L 0.300 BSC 7.62 BSC
D 20 PL 0.25 (0.010) M T B M 0 15
M  0 15 
0.25 (0.010) M T A M N 0.0200.040 0.51 1.01

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392
SOIC−8 NB
8 CASE 751−07
ISSUE AD
1
DATE 18 NOV 2004
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
−X− ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
4 MAXIMUM MATERIAL CONDITION.
−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.

G MILLIMETERS INCHES
DIM MIN MAX MIN MAX
C N X 45  A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
SEATING
PLANE C 1.35 1.75 0.053 0.069
−Z− D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
0.10 (0.004) H 0.10 0.25 0.004 0.010
H M J J 0.19 0.25 0.007 0.010
D K 0.40 1.27 0.016 0.050
M 0  8  0  8 
N 0.25 0.50 0.010 0.020
0.25 (0.010) M Z Y S X S
S 5.80 6.20 0.228 0.244

GENERIC
MARKING DIAGRAM*
RECOMMENDED FOOTPRINT
8 8
XXXXXX XXXXXX
ALYWX AYWWX
1.52  
0.060 1 1
IC Discrete
7.0 4.0
0.275 XXXXX = Specific Device Code
0.155
A = Assembly Location
L = Wafer Lot
Y = Year
W, WW = Work Week
 = Pb−Free Package
0.6 1.270
0.024 0.050
*This information is generic. Please refer
SCALE 6:1  mm
inches
 to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.

STYLES ON NEXT PAGE

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393
SOIC−8 NB
CASE 751−07
ISSUE AD
DATE 18 NOV 2004

STYLE 1: STYLE 2: STYLE 3: STYLE 4:


PIN 1. EMITTER PIN 1. COLLECTOR, DIE, #1 PIN 1. DRAIN, DIE #1 PIN 1. ANODE
2. COLLECTOR 2. COLLECTOR, #1 2. DRAIN, #1 2. ANODE
3. COLLECTOR 3. COLLECTOR, #2 3. DRAIN, #2 3. ANODE
4. EMITTER 4. COLLECTOR, #2 4. DRAIN, #2 4. ANODE
5. EMITTER 5. BASE, #2 5. GATE, #2 5. ANODE
6. BASE 6. EMITTER, #2 6. SOURCE, #2 6. ANODE
7. BASE 7. BASE, #1 7. GATE, #1 7. ANODE
8. EMITTER 8. EMITTER, #1 8. SOURCE, #1 8. COMMON CATHODE

STYLE 5: STYLE 6: STYLE 7: STYLE 8:


PIN 1. DRAIN PIN 1. SOURCE PIN 1. INPUT PIN 1. COLLECTOR, DIE #1
2. DRAIN 2. DRAIN 2. EXTERNAL BYPASS 2. BASE, #1
3. DRAIN 3. DRAIN 3. THIRD STAGE SOURCE 3. BASE, #2
4. DRAIN 4. SOURCE 4. GROUND 4. COLLECTOR, #2
5. GATE 5. SOURCE 5. DRAIN 5. COLLECTOR, #2
6. GATE 6. GATE 6. GATE 3 6. EMITTER, #2
7. SOURCE 7. GATE 7. SECOND STAGE Vd 7. EMITTER, #1
8. SOURCE 8. SOURCE 8. FIRST STAGE Vd 8. COLLECTOR, #1

STYLE 9: STYLE 10: STYLE 11: STYLE 12:


PIN 1. EMITTER, COMMON PIN 1. GROUND PIN 1. SOURCE 1 PIN 1. SOURCE
2. COLLECTOR, DIE #1 2. BIAS 1 2. GATE 1 2. SOURCE
3. COLLECTOR, DIE #2 3. OUTPUT 3. SOURCE 2 3. SOURCE
4. EMITTER, COMMON 4. GROUND 4. GATE 2 4. GATE
5. EMITTER, COMMON 5. GROUND 5. DRAIN 2 5. DRAIN
6. BASE, DIE #2 6. BIAS 2 6. DRAIN 2 6. DRAIN
7. BASE, DIE #1 7. INPUT 7. DRAIN 1 7. DRAIN
8. EMITTER, COMMON 8. GROUND 8. DRAIN 1 8. DRAIN

STYLE 13: STYLE 14: STYLE 15: STYLE 16:


PIN 1. N.C. PIN 1. N−SOURCE PIN 1. ANODE 1 PIN 1. EMITTER, DIE #1
2. SOURCE 2. N−GATE 2. ANODE 1 2. BASE, DIE #1
3. SOURCE 3. P−SOURCE 3. ANODE 1 3. EMITTER, DIE #2
4. GATE 4. P−GATE 4. ANODE 1 4. BASE, DIE #2
5. DRAIN 5. P−DRAIN 5. CATHODE, COMMON 5. COLLECTOR, DIE #2
6. DRAIN 6. P−DRAIN 6. CATHODE, COMMON 6. COLLECTOR, DIE #2
7. DRAIN 7. N−DRAIN 7. CATHODE, COMMON 7. COLLECTOR, DIE #1
8. DRAIN 8. N−DRAIN 8. CATHODE, COMMON 8. COLLECTOR, DIE #1

STYLE 17: STYLE 18: STYLE 19: STYLE 20:


PIN 1. VCC PIN 1. ANODE PIN 1. SOURCE 1 PIN 1. SOURCE (N)
2. V2OUT 2. ANODE 2. GATE 1 2. GATE (N)
3. V1OUT 3. SOURCE 3. SOURCE 2 3. SOURCE (P)
4. TXE 4. GATE 4. GATE 2 4. GATE (P)
5. RXE 5. DRAIN 5. DRAIN 2 5. DRAIN
6. VEE 6. DRAIN 6. MIRROR 2 6. DRAIN
7. GND 7. CATHODE 7. DRAIN 1 7. DRAIN
8. ACC 8. CATHODE 8. MIRROR 1 8. DRAIN

STYLE 21: STYLE 22: STYLE 23: STYLE 24:


PIN 1. CATHODE 1 PIN 1. I/O LINE 1 PIN 1. LINE 1 IN PIN 1. BASE
2. CATHODE 2 2. COMMON CATHODE/VCC 2. COMMON ANODE/GND 2. EMITTER
3. CATHODE 3 3. COMMON CATHODE/VCC 3. COMMON ANODE/GND 3. COLLECTOR/ANODE
4. CATHODE 4 4. I/O LINE 3 4. LINE 2 IN 4. COLLECTOR/ANODE
5. CATHODE 5 5. COMMON ANODE/GND 5. LINE 2 OUT 5. CATHODE
6. COMMON ANODE 6. I/O LINE 4 6. COMMON ANODE/GND 6. CATHODE
7. COMMON ANODE 7. I/O LINE 5 7. COMMON ANODE/GND 7. COLLECTOR/ANODE
8. CATHODE 6 8. COMMON ANODE/GND 8. LINE 1 OUT 8. COLLECTOR/ANODE

STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT

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394
SOIC−14
CASE 751A−03
ISSUE G
14
DATE 30 APR 2004
1
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−A− 3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
14 8 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
−B− P 7 PL DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
0.25 (0.010) M B M DIMENSION AT MAXIMUM MATERIAL
CONDITION.
1 7 MILLIMETERS INCHES
DIM MIN MAX MIN MAX
G R X 45  F A 8.55 8.75 0.337 0.344
C B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
−T− G 1.27 BSC 0.050 BSC
K M J
SEATING D 14 PL J 0.19 0.25 0.008 0.009
PLANE K 0.10 0.25 0.004 0.009
0.25 (0.010) MA T B S S M 0 7 0 7
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019

GENERIC
MARKING DIAGRAM*
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
14
PIN 1. COMMON CATHODE CANCELLED PIN 1. NO CONNECTION PIN 1. NO CONNECTION
2. ANODE/CATHODE 2. ANODE 2. CATHODE XXXXXXXXXX
3. ANODE/CATHODE 3. ANODE 3. CATHODE
4. NO CONNECTION 4. NO CONNECTION 4. NO CONNECTION AWLYWWG
5. ANODE/CATHODE 5. ANODE 5. CATHODE
6. NO CONNECTION 6. NO CONNECTION 6. NO CONNECTION 1
7. ANODE/CATHODE 7. ANODE 7. CATHODE
8. ANODE/CATHODE 8. ANODE 8. CATHODE
9. ANODE/CATHODE 9. ANODE 9. CATHODE XXXXX = Specific Device Code
10. NO CONNECTION 10. NO CONNECTION 10. NO CONNECTION A = Assembly Location
11. ANODE/CATHODE 11. ANODE 11. CATHODE
12. ANODE/CATHODE 12. ANODE 12. CATHODE WL = Wafer Lot
13. NO CONNECTION 13. NO CONNECTION 13. NO CONNECTION Y = Year
14. COMMON ANODE 14. COMMON CATHODE 14. COMMON ANODE
WW = Work Week
G = Pb−Free Package
STYLE 5: STYLE 6: STYLE 7: STYLE 8:
PIN 1. COMMON CATHODE PIN 1. CATHODE PIN 1. ANODE/CATHODE PIN 1. COMMON CATHODE *This information is generic. Please refer to
2. ANODE/CATHODE 2. CATHODE 2. COMMON ANODE 2. ANODE/CATHODE
3. ANODE/CATHODE 3. CATHODE 3. COMMON CATHODE 3. ANODE/CATHODE device data sheet for actual part marking.
4. ANODE/CATHODE 4. CATHODE 4. ANODE/CATHODE 4. NO CONNECTION Pb−Free indicator, “G” or microdot “ ”,
5. ANODE/CATHODE 5. CATHODE 5. ANODE/CATHODE 5. ANODE/CATHODE may or may not be present.
6. NO CONNECTION 6. CATHODE 6. ANODE/CATHODE 6. ANODE/CATHODE
7. COMMON ANODE 7. CATHODE 7. ANODE/CATHODE 7. COMMON ANODE
8. COMMON CATHODE 8. ANODE 8. ANODE/CATHODE 8. COMMON ANODE
9. ANODE/CATHODE 9. ANODE 9. ANODE/CATHODE 9. ANODE/CATHODE
10. ANODE/CATHODE 10. ANODE 10. ANODE/CATHODE 10. ANODE/CATHODE
11. ANODE/CATHODE 11. ANODE 11. COMMON CATHODE 11. NO CONNECTION
12. ANODE/CATHODE 12. ANODE 12. COMMON ANODE 12. ANODE/CATHODE
13. NO CONNECTION 13. ANODE 13. ANODE/CATHODE 13. ANODE/CATHODE
14. COMMON ANODE 14. ANODE 14. ANODE/CATHODE 14. COMMON CATHODE

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395
SOIC
CASE 751B−05
ISSUE J DATE 04/28/1993

SCALE 1:1

−A−
NOTES:
1. DIMENSIONING A ND T OL ERA NCING PER
A NSI Y 14. 5M, 1982.
16 9 2. CONT ROL L ING DIME NSION: MIL L IME T E R.
3. DIMENSIONS A A ND B DO NOT INCL UDE
−B− P MOL D PR OT R USION.
8 PL
4. MA XIMUM MOL D PROT RUSION 0. 15 (0. 006)
1 8
0.25 (0.010) M B S PER S IDE.
5. DIME NSION D DOE S NOT INCL UDE DA MB A R
PROT RUSION. A L L OWA B LE DA MB A R
PROT RUSION SHA L L B E 0. 127 (0. 005) T OTAL
IN EXCES S OF T HE D DIMENS ION A T
MA XIMUM MA T ERIA L CONDIT ION.
G
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 9.8010.00 0.386 0.393
K R X 45  B 3.80 4.000.1500.157
C 1.35 1.750.0540.068
D 0.35 0.490.0140.019
C F 0.40 1.250.0160.049
−T− SEATING G 1.27 BSC 0.050 BSC
PLANE J J 0.19 0.250.0080.009
M
K 0.10 0.250.0040.009
D 16 PL M 0 7 0 7  
P 5.80 6.200.2290.244
0.25 (0.010) MA T B S S R 0.25 0.500.0100.019

STYLES ON NEXT PAGE

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396
SOIC
CASE 751B−05
ISSUE J DATE 04/28/1993

TSY LE :1 TSY LE :2 TSY LE :3 TSY LE :4


PIN 1. COLLECTOR PIN 1. CA THODE PIN 1. C OL L ECTOR, DY E #
1 PIN 1. C OL L ECTOR, DY E #
1
2. BASE 2. ANODE 2. BAE S, # 1 2. COL L ECT OR, #
1
3. EMITTER 3. NO CONNE CT ION 3. EMITTER, # 1 3. COL L ECT OR, #
2
4. NO CONNE CT ION 4. CATHODE 4. COL L ECT OR, #
1 4. COL L ECT OR, #
2
5. EMITTER 5. CATHODE 5. COL L ECT OR, #
2 5. COL L ECT OR, #
3
6. BASE 6. NO CONNE CT ION 6. BAE S, # 2 6. COL L ECT OR, #
3
7. COLLECTOR 7. ANODE 7. EMITTER, # 2 7. COL L ECT OR, #
4
8. COLLECTOR 8. CATHODE 8. COL L ECT OR, #
2 8. COL L ECT OR, #
4
9. BASE 9. CATHODE 9. COL L ECT OR, #
3 9. BAE S, # 4
10. EMITTER 10. ANODE 10. BAE S, # 3 10. EMITTER, # 4
11. NO CONNE CT ION 11. NO CONNE CT ION 11. EMITTER, # 3 11. BAE S, # 3
12. EMITTER 12. CATHODE 12. COL L ECT OR, #
3 12. EMITTER, # 3
13. BASE 13. CATHODE 13. COL L ECT OR, #
4 13. BAE S, # 2
14. COLLECTOR 14. NO CONNE CT ION 14. BAE S, # 4 14. EMITTER, # 2
15. EMITTER 15. ANODE 15. EMITTER, # 4 15. BAE S, # 1
16. COLLECTOR 16. CATHODE 16. COL L ECT OR, #
4 16. EMITTER, # 1

TSY LE :5 TSY LE :6 TSY LE :7


PIN 1. D RA IN, DY E #
1 PIN 1. CA THODE PIN 1. S OUR C E N-C H
2. DRA IN, #1 2. CATHODE 2. COMMON DRA IN (OUT PUT )
3. DRA IN, #2 3. CATHODE 3. COMMON DRA IN (OUT PUT )
4. DRA IN, #2 4. CATHODE 4. GAT E PCH
-
5. DRA IN, #3 5. CATHODE 5. COMMON DRA IN (OUT PUT )
6. DRA IN, #3 6. CATHODE 6. COMMON DRA IN (OUT PUT )
7. DRA IN, #4 7. CATHODE 7. COMMON DRA IN (OUT PUT )
8. DRA IN, #4 8. CATHODE 8. SOUR C E P-C H
9. GATE, # 4 9. ANODE 9. SOUR C E P-C H
10. SOURCE , #4 10. ANODE 10. COMMON DRA IN (OUT PUT )
11. GATE, # 3 11. ANODE 11. COMMON DRA IN (OUT PUT )
12. SOURCE , #3 12. ANODE 12. COMMON DRA IN (OUT PUT )
13. GATE, # 2 13. ANODE 13. GAT E N-CH
14. SOURCE , #2 14. ANODE 14. COMMON DRA IN (OUT PUT )
15. GATE, # 1 15. ANODE 15. COMMON DRA IN (OUT PUT )
16. SOURCE , #1 16. ANODE 16. SOUR C E N-C H

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397
SO−20 WB
CASE 751D−05
ISSUE G
DATE 30 APR 2004
SCALE 1:1

D
A 
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
20 11 2. INTERPRET DIMENSIONS AND TOLERANCES
M

PER ASME Y14.5M, 1994.


B

X 45 
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
H
M

PROTRUSION.
E
10X

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.


0.25

h
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
1 10 DIMENSION AT MAXIMUM MATERIAL
CONDITION.

MILLIMETERS
20X B B DIM MIN MAX
A 2.35 2.65
0.25 M T A S B S A1 0.10 0.25
B 0.35 0.49
C 0.23 0.32
D 12.6512.95
E 7.40 7.60
A e 1.27 BSC
H 10.0510.55

L
h 0.25 0.75
SEATING L 0.50 0.90
PLANE
18X e A1  0 7 
T C
GENERIC
MARKING DIAGRAM*
20

XXXXXXXXXXX
XXXXXXXXXXX
AWLYYWWG

XXXXX = Specific Device Code


A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to de-
vice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.

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398
SOIC
CASE 751E−04
ISSUE E DATE 06/18/1993

SCALE 1:1

−A−

24 13 NOTES:
1. DIMENSIONING A ND T OL ERA NCING PER
A NSI Y 14. 5M, 1982.
2. CONT ROL L ING DIME NSION: MIL L IME T E R.
3. DIMENSIONS A A ND B DO NOT INCL UDE
−B− 12X P MOL D PR OT R USION.
4. MA XIMUM MOL D PROT RUSION 0. 15 (0. 006)
0.010 (0.25) M B M
PER S IDE.
5. DIME NSION D DOE S NOT INCL UDE DA MB A R
1 12 PROT RUSION. A L L OW A B LE DA MB A R
PROT RUSION SHA L L B E 0. 13 (0. 005) T OTAL IN
E XCE S OF D DIME NSION A T MA XIMUM
MAT ERIA L CONDIT ION.
24X D J
MILLIMETERS INCHES
0.010 (0.25) MB T A S S
DIM MIN MAX MIN MAX
A 15.2515.54 0.601 0.612
F B 7.40 7.600.2920.299
C 2.35 2.650.0930.104
R X 45  D 0.35 0.490.0140.019
F 0.41 0.900.0160.035
G 1.27 BSC 0.050 BSC
C J 0.23 0.320.0090.013
K 0.13 0.290.0050.01 1
−T− M 0 8 0 8  
SEATING M P 10.0510.550.3950.415
PLANE 22X G K R 0.25 0.750.0100.029

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399
TSSOP−20
CASE 948E−02
ISSUE B DATE 16 JUN 2003

SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
20X K REF 3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
0.15 (0.006) T U S 0.10 (0.004) MV T U S S
BURRS. MOLD FLASH OR GATE BURRS
K SHALL NOT EXCEED 0.15 (0.006) PER

ÍÍÍÍ
SIDE.
K1 4. DIMENSION B DOES NOT INCLUDE
20 11 INTERLEAD FLASH OR PROTRUSION.

ÍÍÍÍ
2X L/2 INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER
J J1

ÍÍÍÍ
B SIDE.
5. DIMENSION K DOES NOT INCLUDE
L −U− DAMBAR PROTRUSION. ALLOWABLE
PIN 1 DAMBAR PROTRUSION SHALL BE 0.08
IDENT SECTION N−N (0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
1 10 CONDITION.
6. TERMINAL NUMBERS ARE SHOWN
N 0.25 (0.010) FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
0.15 (0.006) T U S DETERMINED AT DATUM PLANE −W−.

A M
MILLIMETERS INCHES
−V− DIM MIN MAX MIN MAX
A 6.40 6.600.252 0.260
N B 4.30 4.500.1690.177
C −−− −−−
1.20 0.047
F D 0.05 0.150.0020.006
F 0.50 0.750.0200.030
DETAIL E G 0.65 BSC 0.026 BSC
H 0.27 0.370.01 1 0.015
J 0.09 0.200.0040.008
−W− J1 0.09 0.160.0040.006
C K 0.19 0.300.0070.012
K1 0.19 0.250.0070.010
L 6.40 BSC 0.252 BSC
D G
H M 0 8 0 8 
DETAIL E
0.100 (0.004)
GENERIC
−T− SEATING
PLANE MARKING DIAGRAM*

XXXX
XXXX
ALYW

*This infomration is generic. Please refer


to device data sheet for actual part
marking.

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400
TSSOP
CASE 948F−01
ISSUE O DATE 12/20/1994

SCALE 2:1

16X K REF

0.10 (0.004) MV T U S S

0.15 (0.006) T U S
K

ÏÏÏ
ÎÎÎ
K1
NOTES:

ÎÎÎ
ÏÏÏ
16 9 1.DIMENSIONING A ND T OL ERA NCING PER
2X L/2 J1 A NSI Y 14. 5M, 1982.
2.C ONT ROL L ING DIME NS ION: MIL L IME T E R.
3.D IME NSION A DOE S NOT INCL UDE MOL D
B F L A SH. PROT RUSIONS OR G A TE B URRS .
SECTION N−N MOL D F L A S H OR G A TE B URRS H SA L L NOT
L −U− E XCE E D 0. 15 (0. 006) PE R SIDE .
J 4.D IME NSION B DOE S NOT INCL UDE
PIN 1
INT ERL EA D F L A S H OR PROT RUS ION.
IDENT. INT ERL EA D F L A S H OR PROT RUS ION SHA L L
1 8 NOT EXCEED
0. 25 (0. 010) PE R SIDE .
N 5.D IME NSION K DOE S NOT INCL UDE DA MB A R
0.25 (0.010) PROT RUSION. A L L OW A B LE DA MB A R
PROT RUSION SHA L L B E 0. 08 (0. 003) T OTAL IN
0.15 (0.006) T U S
A M E XCE S OF T HE K DIME NS ION A T MA XIMUM
MAT ERIA L CONDIT ION.
−V− 6.T ERMINA L NUMB ERS A RE S HOWN F OR
REF ERENCE ONLY.
N 7.D IMENSION A A ND B A RE TO B E
DET ERMINED A T DATUM PLA NE − W −.
F MILLIMETERS INCHES
DIM MIN MAX MIN MAX
DETAIL E A 4.90 5.10 0.193 0.200
B 4.30 4.500.1690.177
C −−− 1.20 −−− 0.047
D 0.05 0.150.0020.006

C −W− GF 0.50 0.750.0200.030


0.65 BSC 0.026 BSC
H 0.18 0.280.0070.01 1
J 0.09 0.200.0040.008
0.10 (0.004) J1 0.09 0.160.0040.006
−T− SEATING H DETAIL E K 0.19 0.300.0070.012
PLANE D G K1 0.19 0.250.0070.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8

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401
TSSOP
CASE 948G−01
ISSUE O DATE 12/07/1994

SCALE 2:1

14X K REF NOTES:


1.DIMENSIONING A ND T OL ERA NCING PER
0.10 (0.004) MV T U S S A NSI Y 14. 5M, 1982.
2.C ONT ROL L ING DIME NS ION: MIL L IME T E R.
0.15 (0.006) T U S 3.D IME NSION A DOE S NOT INCL UDE MOL D
F L A SH, PROT RUSIONS OR G A TE B URRS .
MOL D F L A S H OR G A TE B URRS H SA L L NOT
N E XCE E D 0. 15 (0. 006) PE R SIDE .
0.25 (0.010)
14 8 4.D IME NSION B DOE S NOT INCL UDE
2X L/2 INT ERL EA D F L A S H OR PROT RUS ION.
M INT ERL EA D F L A S H OR PROT RUS ION SHA L L
NOT EXCEED
B 0. 25 (0. 010) PE R SIDE .
L 5.D IME NSION K DOE S NOT INCL UDE DA MB A R
PIN 1
−U− N
PROT RUSION. A L L OW A B LE DA MB A R
IDENT. F PROT RUSION SHA L L B E 0. 08 (0. 003) T OTAL IN
E XCE S OF T HE K DIME NS ION A T MA XIMUM
1 7 MAT ERIA L CONDIT ION.
DETAIL E
6.T ERMINA L NUMB ERS A RE S HOWN F OR
REF ERENCE ONLY.
7.D IMENSION A A ND B A RE TO B E

ÎÎÎ
ÏÏ
0.15 (0.006) T U S
A K DET ERMINED A T DATUM PLA NE − W −.
MILLIMETERS INCHES
−V− K1 DIM MIN MAX MIN MAX

ÎÎÎ
ÏÏ
A 4.90 5.10 0.193 0.200
B 4.30 4.500.1690.177

ÎÎÎ
ÏÏ
J J1 C −−− 1.20 −−− 0.047
D 0.05 0.150.0020.006
F 0.50 0.750.0200.030
SECTION N−N G 0.65 BSC 0.026 BSC
H 0.50 0.600.0200.024
J 0.09 0.200.0040.008
J1 0.09 0.160.0040.006
C −W− K 0.19 0.300.0070.012
K1 0.19 0.250.0070.010
0.10 (0.004) L 6.40 BSC 0.252 BSC
M 0 8 0 8
−T− SEATING D G H DETAIL E
PLANE

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402
SOEIAJ−14
CASE 965−01
ISSUE O DATE 01/19/1994

SCALE 2:1 NOTES:


1.DIMENSIONING A ND T OL ERA NCING PER
A NSI Y 14. 5M, 1982.
2.C ONT ROL L ING DIME NS ION: MIL L IME T E R.
3.D IME NSIONS D A ND E DO NOT INCL UDE
MOL D F L A SH OR PROT RUSIONS A ND A RE
14 8 LE MEA S URED A T THE PA RTING L INE. MOL D
F L A SH OR PROT RUSIONS SHA L L NOT E XCE E D
Q1 0. 15 (0. 006) PE R SIDE .
4.T ERMINA L NUMB ERS A RE S HOW
N F OR
E HE M REF ERENCE ONLY.
5.T HE L E A D W IDT H DIME NSION (b ) DOE S NOT
INCL UDE DA MB A R PROT RUS ION. A L L OWABLE
DA MB A R PROT RUS ION S HA L L B E 0. 08 (0. 003)
1 7 L TOTA L IN EXCES S OF THE L EA D W IDTH
DIME NSION A T MA XIMUM MA TERIAL
DETAIL P CONDITION. DA MB A R CA NNOT B E L OCA T E D ON
Z T HE L OW ER RA DIUS OR T HE F OOT. MINIMUM
SPA CE B E T W E E N PROT RUSIONS A ND
D A DJ A CENT L EA D TO B E 0. 46 ( 0. 018).

VIEW P MILLIMETERS INCHES


A DIM MIN MAX MIN MAX
e A −−− 2.05 −−− 0.081
c A1 0.05 0.200.0020.008
b 0.35 0.500.0140.020
c 0.18 0.270.0070.01 1
D 9.9010.500.3900.413
b A1 E 5.10 5.450.2010.215
e 1.27 BSC 0.050 BSC
0.13 (0.005) M 0.10 (0.004) HE 7.40 8.200.2910.323
0.50 0.50 0.850.0200.033
LE 1.10 1.500.0430.059
M 0 10  0 10 
Q1 0.70 0.900.0280.035
Z −−− 1.42 −−− 0.056
XXXXXXXXXX
AWLYWW

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403
SOEIAJ−16
CASE 966−01
ISSUE O DATE 01/19/1994

SCALE 1:1

NOTES:
1.DIMENSIONING A ND T OL ERA NCING PER
A NSI Y 14. 5M, 1982.
2.C ONT ROL L ING DIME NS ION: MIL L IME T E R.
3.D IME NSIONS D A ND E DO NOT INCL UDE
16 9 LE MOL D F L A SH OR PROT RUSIONS A ND A RE
MEA S URED A T THE PA RTING L INE. MOL D
Q1 F L A SH OR PROT RUSIONS SHA L L NOT E XCE E D
0. 15 (0. 006) PE R SIDE .
E HE M 4.T ERMINA L NUMB ERS A RE S HOW
N F OR
REF ERENCE ONLY.
5.T HE L E A D W IDT H DIME NSION (b ) DOE S NOT
INCL UDE DA MB A R PROT RUS ION. A L L OWABLE
1 8 L DA MB A R PROT RUS ION S HA L L B E 0. 08 (0. 003)
TOTA L IN EXCES S OF THE L EA D W IDTH
DETAIL P DIME NSION A T MA XIMUM MA TERIAL
Z CONDITION. DA MB A R CA NNOT B E L OCA T E D ON
D T HE L OW ER RA DIUS OR T HE F OOT. MINIMUM
SPA CE B E T W E E N PROT RUSIONS A ND
A DJ A CENT L EA D TO B E 0. 46 ( 0. 018).
VIEW P
e A MILLIMETERS INCHES
c DIM MIN MAX MIN MAX
A −−− 2.05 −−− 0.081
A1 0.05 0.200.0020.008
b 0.35 0.500.0140.020
c 0.18 0.270.0070.01 1
A1 D 9.9010.500.3900.413
b E 5.10 5.450.2010.215
e 1.27 BSC 0.050 BSC
0.13 (0.005) M 0.10 (0.004) HE 7.40 8.200.2910.323
L 0.50 0.850.0200.033
LE 1.10 1.500.0430.059
M 0 10  0 10 
Q1 0.70 0.900.0280.035
Z −−− 0.78 −−− 0.031

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404
SOEIAJ−20
CASE 967−01
ISSUE O DATE 01/19/1990

SCALE 2:1
NOTES:
1.DIMENSIONING A ND T OL ERA NCING PER
A NSI Y 14. 5M, 1982.
2.C ONT ROL L ING DIME NS ION: MIL L IME T E R.
3.D IME NSIONS D A ND E DO NOT INCL UDE
LE MOL D F L A SH OR PROT RUSIONS A ND A RE
20 11
MEA S URED A T THE PA RTING L INE. MOL D
Q1 F L A SH OR PROT RUSIONS SHA L L NOT E XCE E D
0. 15 (0. 006) PE R SIDE .
4.T ERMINA L NUMB ERS A RE S HOW
N F OR
E HE M REF ERENCE ONLY.
5.T HE L E A D W IDT H DIME NSION (b ) DOE S NOT
INCL UDE DA MB A R PROT RUS ION. A L L OWABLE
L DA MB A R PROT RUS ION S HA L L B E 0. 08 (0. 003)
1 10 TOTA L IN EXCES S OF THE L EA D W IDTH
DIME NSION A T MA XIMUM MA TERIAL
Z DETAIL P CONDITION. DA MB A R CA NNOT B E L OCA T E D ON
T HE L OW ER RA DIUS OR T HE F OOT. MINIMUM
D SPA CE B E T W E E N PROT RUSIONS A ND
A DJ A CENT L EA D TO B E 0. 46 ( 0. 018).
VIEW P MILLIMETERS INCHES
e A DIM MIN MAX MIN MAX
c A −−− 2.05 −−− 0.081
A1 0.05 0.200.0020.008
b 0.35 0.500.0140.020
c 0.18 0.270.0070.01 1
D 12.3512.800.4860.504
b A1 E 5.10 5.450.2010.215
e 1.27 BSC 0.050 BSC
0.13 (0.005) M 0.10 (0.004) HE 7.40 8.200.2910.323
L 0.50 0.850.0200.033
LE 1.10 1.500.0430.059
M 0 10  0 10 
Q1 0.70 0.900.0280.035
Z −−− 0.81 −−− 0.032

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405
CHAPTER 4
Index

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406
High−Speed CMOS Device Index

Device Number Page Device Number Page Device Number Page


MC74HC00A 27 MC74HC132AD 51 MC74HC175AD 104
MC74HC00AD 27 MC74HC132ADG 51 MC74HC175ADR2 104
MC74HC00ADG 27 MC74HC132ADR2 51 MC74HC175ADT 104
MC74HC00ADR2 27 MC74HC132ADR2G 51 MC74HC175ADTR2 104
MC74HC00ADR2G 27 MC74HC132ADT 51 MC74HC175AN 104
MC74HC00ADT 27 MC74HC132ADTR2 51 MC74HC1G00 110
MC74HC00ADTR2 27 MC74HC132AN 51 MC74HC1G00DFT1 110
MC74HC00AN 27 MC74HC132ANG 51 MC74HC1G00DFT1G 110
MC74HC00ANG 27 MC74HC138A 58 MC74HC1G00DFT2 110
MC74HC02A 31 MC74HC138AD 58 MC74HC1G00DFT2G 110
MC74HC02AD 31 MC74HC138ADR2 58 MC74HC1G00DTT1 110
MC74HC02ADG 31 MC74HC138ADT 58 MC74HC1G00DTT1G 110
MC74HC02ADR2 31 MC74HC138ADTR2 58 MC74HC1G02 114
MC74HC02ADR2G 31 MC74HC138AN 58 MC74HC1G02DFT1 114
MC74HC02ADT 31 MC74HC139A 63 MC74HC1G02DFT1G 114
MC74HC02ADTR2 31 MC74HC14A 69 MC74HC1G02DFT2 114
MC74HC02AN 31 MC74HC14AD 69 MC74HC1G02DFT2G 114
MC74HC02ANG 31 MC74HC14ADG 69 MC74HC1G02DTT1 114
MC74HC03A 35 MC74HC14ADR2 69 MC74HC1G02DTT1G 114
MC74HC03AD 35 MC74HC14ADR2G 69 MC74HC1G04 118
MC74HC03ADR2 35 MC74HC14ADT 69 MC74HC1G04DFT1 118
MC74HC03ADT 35 MC74HC14ADTR2 69 MC74HC1G04DFT1G 118
MC74HC03ADTR2 35 MC74HC14AN 69 MC74HC1G04DFT2 118
MC74HC03AN 35 MC74HC14ANG 69 MC74HC1G04DFT2G 118
MC74HC04A 39 MC74HC157A 74 MC74HC1G04DTT1 118
MC74HC04ADR2 39 MC74HC157AD 74 MC74HC1G04DTT1G 118
MC74HC04ADR2G 39 MC74HC157ADR2 74 MC74HC1G08 122
MC74HC04ADT 39 MC74HC157ADT 74 MC74HC1G08DFT1 122
MC74HC04ADTR2 39 MC74HC157ADTR2 74 MC74HC1G08DFT1G 122
MC74HC04AN 39 MC74HC157AN 74 MC74HC1G08DFT2 122
MC74HC04ANG 39 MC74HC161A 79 MC74HC1G08DFT2G 122
MC74HC08A 43 MC74HC163A 79 MC74HC1G08DTT1 122
MC74HC08AD 43 MC74HC164A 92 MC74HC1G08DTT1G 122
MC74HC08ADR2 43 MC74HC164AD 92 MC74HC1G14 126
MC74HC08ADT 43 MC74HC164ADR2 92 MC74HC1G14DFT1 126
MC74HC08ADTR2 43 MC74HC164ADT 92 MC74HC1G14DFT1G 126
MC74HC08AN 43 MC74HC164ADTR2 92 MC74HC1G14DFT2 126
MC74HC125A 47 MC74HC164AN 92 MC74HC1G14DFT2G 126
MC74HC126A 47 MC74HC174A 98 MC74HC1G14DTT1 126
MC74HC12xAD 47 MC74HC174AD 98 MC74HC1G14DTT1G 126
MC74HC12xADR2 47 MC74HC174ADR2 98 MC74HC1G32 130
MC74HC12xADT 47 MC74HC174ADT 98 MC74HC1G32DFT1 130
MC74HC12xADTR2 47 MC74HC174ADTR2 98 MC74HC1G32DFT1G 130
MC74HC12xAN 47 MC74HC174AN 98 MC74HC1G32DFT2 130
MC74HC132A 51 MC74HC175A 104 MC74HC1G32DTT1 130

http://onsemi.com
407
High−Speed CMOS Device Index

Device Number Page Device Number Page Device Number Page


MC74HC1G32DTT1G 130 MC74HC373AFEL 166 MC74HC4051ADWR2 213
MC74HC1GU04 134 MC74HC373AN 166 MC74HC4051AF 213
MC74HC1GU04DFT1 134 MC74HC373ANG 166 MC74HC4051AFEL 213
MC74HC1GU04DFT1G 134 MC74HC374A 170 MC74HC4051AN 213
MC74HC1GU04DFT2 134 MC74HC374ADT 170 MC74HC4052A 213
MC74HC1GU04DFT2G 134 MC74HC374ADTR2 170 MC74HC4052AD 213
MC74HC1GU04DTT1 134 MC74HC374ADW 170 MC74HC4052ADR2 213
MC74HC1GU04DTT1G 134 MC74HC374ADWR2 170 MC74HC4052ADT 213
MC74HC240A 138 MC74HC374AN 170 MC74HC4052ADTR2 213
MC74HC240ADT 138 MC74HC390A 175 MC74HC4052ADW 213
MC74HC240ADTR2 138 MC74HC390AD 175 MC74HC4052ADWR2 213
MC74HC240ADW 138 MC74HC390ADR2 175 MC74HC4052AF 213
MC74HC240ADWR2 138 MC74HC390ADT 175 MC74HC4052AFEL 213
MC74HC240AN 138 MC74HC390ADTR2 175 MC74HC4052AN 213
MC74HC244A 143 MC74HC390AN 175 MC74HC4053A 213
MC74HC244ADT 143 MC74HC393A 181 MC74HC4053AD 213
MC74HC244ADTR2 143 MC74HC393AD 181 MC74HC4053ADR2 213
MC74HC244ADW 143 MC74HC393ADR2 181 MC74HC4053ADT 213
MC74HC244ADWR2 143 MC74HC393ADT 181 MC74HC4053ADTR2 213
MC74HC244AN 143 MC74HC393ADTR2 181 MC74HC4053ADW 213
MC74HC245A 148 MC74HC393AN 181 MC74HC4053ADWR2 213
MC74HC245ADT 148 MC74HC4020A 187 MC74HC4053AF 213
MC74HC245ADTR2 148 MC74HC4020AD 187 MC74HC4053AFEL 213
MC74HC245ADW 148 MC74HC4020ADR2 187 MC74HC4053AN 213
MC74HC245ADWR2 148 MC74HC4020ADT 187 MC74HC4060A 226
MC74HC245AN 148 MC74HC4020ADTR2 187 MC74HC4060AD 226
MC74HC273A 154 MC74HC4020AN 187 MC74HC4060ADR2 226
MC74HC273ADT 154 MC74HC4040A 193 MC74HC4060ADT 226
MC74HC273ADTR2 154 MC74HC4040AD 193 MC74HC4060ADTR2 226
MC74HC273ADW 154 MC74HC4040ADR2 193 MC74HC4060AN 226
MC74HC273ADWR2 154 MC74HC4040ADT 193 MC74HC4066A 235
MC74HC273AN 154 MC74HC4040ADTR2 193 MC74HC4066ADR2 235
MC74HC32A 160 MC74HC4040AN 193 MC74HC4066ADT 235
MC74HC32AD 160 MC74HC4046A 199 MC74HC4066ADTR2 235
MC74HC32ADR2 160 MC74HC4046AD 199 MC74HC4066AN 235
MC74HC32ADT 160 MC74HC4046ADR2 199 MC74HC4316A 246
MC74HC32ADTR2 160 MC74HC4046AF 199 MC74HC4316AD 246
MC74HC32AN 160 MC74HC4046AFEL 199 MC74HC4316ADR2 246
MC74HC373A 164 MC74HC4046AN 199 MC74HC4316AFEL 246
MC74HC373ADT 166 MC74HC4051A 213 MC74HC4316AN 246
MC74HC373ADTR2 166 MC74HC4051AD 213 MC74HC4316ANG 246
MC74HC373ADW 166 MC74HC4051ADR2 213 MC74HC4538A 257
MC74HC373ADWR2 166 MC74HC4051ADT 213 MC74HC4538AD 257
MC74HC373ADWR2G 166 MC74HC4051ADTR2 213 MC74HC4538ADR2 257
MC74HC373AF 166 MC74HC4051ADW 213 MC74HC4538ADT 257

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408
High−Speed CMOS Device Index

Device Number Page Device Number Page Device Number Page


MC74HC4538ADTR2 257 MC74HC595ADR2 313 MC74HCT273A 349
MC74HC4538AN 257 MC74HC595ADT 313 MC74HCT273ADW 349
MC74HC4851A 270 MC74HC595ADTR2 313 MC74HCT273ADWR2 349
MC74HC4851AD 270 MC74HC595AN 313 MC74HCT273AN 349
MC74HC4851ADR2 270 MC74HC74A 321 MC74HCT373A 353
MC74HC4851ADT 270 MC74HC74AD 321 MC74HCT373ADT 353
MC74HC4851ADTR2 270 MC74HC74ADR2 321 MC74HCT373ADTR2 353
MC74HC4851ADW 270 MC74HC74ADR2G 321 MC74HCT373ADW 353
MC74HC4851ADWR2 270 MC74HC74ADT 321 MC74HCT373ADWR2 353
MC74HC4851AN 270 MC74HC74ADTR2 321 MC74HCT373AN 353
MC74HC4852A 270 MC74HC74AN 321 MC74HCT374A 359
MC74HC4852AD 270 MC74HC74ANG 321 MC74HCT374ADT 359
MC74HC4852ADR2 270 MC74HCT04A 326 MC74HCT374ADTR2 359
MC74HC4852ADTR2 270 MC74HCT04AD 326 MC74HCT374ADW 359
MC74HC4852ADW 270 MC74HCT04ADR2 326 MC74HCT374ADWR2 359
MC74HC4852ADWR2 270 MC74HCT04ADT 326 MC74HCT374AN 359
MC74HC4852AN 270 MC74HCT04ADTR2 326 MC74HCT541A 364
MC74HC540A 280 MC74HCT04AN 326 MC74HCT541ADW 364
MC74HC541A 286 MC74HCT138A 330 MC74HCT541ADWR2 364
MC74HC541ADT 286 MC74HCT138AD 330 MC74HCT541AN 364
MC74HC541ADTR2 286 MC74HCT138ADR2 330 MC74HCT573A 368
MC74HC541ADW 286 MC74HCT138ADT 330 MC74HCT573ADT 368
MC74HC541ADWR2 286 MC74HCT138ADTR2 330 MC74HCT573ADTR2 368
MC74HC541AN 286 MC74HCT138AN 330 MC74HCT573ADW 368
MC74HC573A 292 MC74HCT14A 335 MC74HCT573ADWR2 368
MC74HC573ADT 292 MC74HCT14AD 335 MC74HCT573AN 368
MC74HC573ADTR2 292 MC74HCT14ADR2 335 MC74HCT574A 373
MC74HC573ADW 292 MC74HCT14ADTR2 335 MC74HCT574ADW 373
MC74HC573ADWG 292 MC74HCT14AFEL 335 MC74HCT574ADWR2 373
MC74HC573ADWR2 292 MC74HCT14AN 335 MC74HCT574AN 373
MC74HC573ADWR2G 292 MC74HCT244A 340 MC74HCT74A 378
MC74HC573AN 292 MC74HCT244ADT 340 MC74HCT74AD 378
MC74HC573ANG 292 MC74HCT244ADTR2 340 MC74HCT74ADR2 378
MC74HC574A 298 MC74HCT244ADW 340 MC74HCT74AN 378
MC74HC574ADT 298 MC74HCT244ADWR2 340 MC74HCU04A 383
MC74HC574ADTR2 298 MC74HCT244AN 340 MC74HCU04AD 383
MC74HC574ADW 298 MC74HCT245A 344 MC74HCU04ADR2 383
MC74HC574ADWR2 298 MC74HCT245ADT 344 MC74HCU04ADT 383
MC74HC574AN 298 MC74HCT245ADTR2 344 MC74HCU04ADTR2 383
MC74HC589A 304 MC74HCT245ADW 344 MC74HCU04AN 383
MC74HC595A 313 MC74HCT245ADWR2 344
MC74HC595AD 313 MC74HCT245AN 344

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