Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Circuit Design Process

Consider a CMOS inverter fabricated in a process for which Cox = 0.9 fF/m2, nCox = 50 A/V2, pCox = 20 A/V2, Vtn = - Vtp = 1 V and VDD = 5 V. The W/L ratio of QN is 4 m/2 m, and that for QP is 10 m/2 m. The gate-drain overlap capacitance is specified to be 0.5 fF/m of gate width. Further, the effective value of drain-body capacitances are Cdbn = 10 fF and Cdbp = 15 fF. The wiring capacitance Cw = 5 fF. Determine the tPHL, tPLH and tp.