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2SK2645-01MR: FAP-IIS Series
2SK2645-01MR: FAP-IIS Series
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
600V
1,2
9A
50W
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=600V Tch =25C VGS=0V Tch=125C VGS =30V VDS=0V ID=4A VGS =10V ID=4A VDS=25V VDS=25V VGS =0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 Tch =25C L = 100H IF=2xI DR VGS =0V T ch =25C IF=IDR V GS =0V -dI F/dt=100A/s T ch =25C
Max. 4,5 500 1,0 100 1,2 1400 230 110 40 110 90 60 1,5
2,5
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
Min.
Typ.
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
600V
1,2
2SK2645-01MR
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=4A; VGS=10V
9A
50W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
ID [A]
RDS(ON) []
2
ID [A]
VDS [V]
Tch [C]
VGS [V]
RDS(ON) []
gfs [S]
5
VGS(th) [V]
ID [A]
ID [A]
Tch [C]
C [F]
VDS [V]
VGS [V]
IF [A]
VDS [V]
Qg [nC]
VSD [V]
Zth(ch-c) [K/W]
Eas [mJ]
10
ID [A]
12
VDS [V]
t [s]
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