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2SK3528-01R
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series Outline Drawings
Features TO-3PF

High speed switching

Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 600 V
VDSX *5 600 V
Continuous drain current ID ±17 A Equivalent circuit schematic
Pulsed drain current ID(puls] ±68 A
Gate-source voltage VGS ±30 V Drain(D)
Repetitive or non-repetitive IAR *2 17 A
Maximum Avalanche Energy EAS *1 412 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Gate(G)
Max. power dissipation PD Ta=25°C 3.125 W
Tc=25°C 120 Source(S)

Operating and storage Tch +150 °C

temperature range Tstg -55 to +150 °C
Isolation Voltage VISO *6 2 kVrms
*1 L=2.62mH, Vcc=60V *2 Tch <
=150°C *3 I F <
= -I D, -di/dt=50A/µs, Vcc <
= BVDSS , Tch <
= 150°C
*4 VDS<= 600V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 600 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=600V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=480V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=8.5A VGS=10V 0.29 0.37 Ω
Forward transcondutance gfs ID=8.5A VDS=25V 10 20 S
Input capacitance Ciss VDS =25V 2280 3420 pF
Output capacitance Coss VGS=0V 290 435
Reverse transfer capacitance Crss f=1MHz 16 24
Turn-on time ton td(on) VCC=300V ID=8.5A 26 39 ns
tr VGS=10V 37 56
Turn-off time toff td(off) RGS=10 Ω 78 117
tf 13 19
Total Gate Charge QG V CC=300V 54 81 nC
Gate-Source Charge QGS ID=17A 15 23
Gate-Drain Charge QGD VGS=10V 20 30
Avalanche capability IAV L=2.62mH Tch=25°C 17 A
Diode forward on-voltage V SD IF=17A VGS=0V Tch=25°C 0.93 1.50 V
Reverse recovery time t rr IF=17A VGS=0V 0.7 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 10.0 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.042 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 40.0 °C/W
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2SK3528-01R FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

PD=f(Tc) ID=f(VDS):80µs Pulse test,Tch=25°C
140 45
20V
10V
40 8V
120
7.0V
35
100
30
6.5V
80

ID [A]
25
PD [W]

60 20

15
40 6.0V

10
20
5 VGS=5.5V

0 0
0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20
Tc [°C] VDS [V]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100 100

10 10
ID[A]

gfs [S]

1 1

0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

0.8
RDS(on)=f(ID):80µs Pulse test, Tch=25°C RDS(on)=f(Tch):ID=8.5A,VGS=10V
1.0
VGS=
5.5V 6.0V 6.5V 0.9
0.7

0.8
0.6
0.7
RDS(on) [ Ω ]

RDS(on) [ Ω ]

0.5 7.0V 8V 0.6

10V
0.4 20V 0.5 max.

0.3 0.4

0.3
0.2 typ.
0.2
0.1
0.1

0.0 0.0
0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

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2SK3528-01R FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=17A, Tch=25°C
7.0 24
6.5 22 Vcc= 300V
6.0
20
5.5
18
5.0 max.
Vcc= 120V Vcc= 480V
VGS(th) [V]

16
4.5
4.0 14

VGS [V]
3.5 12
3.0 10
2.5 min.
8
2.0
6
1.5
4
1.0
0.5 2

0.0 0
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120
Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

1 C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80µs Pulse test,Tch=25°C
10 100

Ciss

0
10
10
IF [A]
C [nF]

10
-1 Coss

1
-2 Crss
10

-3
10 0.1
10
-1
10
0
10
1
10
2
10
3 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3 t=f(ID):Vcc=300V, VGS=10V, RG=10Ω E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A
10 500

450

400

2 td(off) 350
10
300
EAV [mJ]

td(on)
t [ns]

250

200
1
10 tr tf
150

100

50

0
10 0
-1 0 1 2
10 10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

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2SK3528-01R FUJI POWER MOSFET

Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=t/T,D=0
10

0
10
Zth(ch-c) [ C/W]
o

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
t [sec]

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25°C. Vcc=60V
2
10
Avalanche current IAV [A]

1
10
Single Pulse

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10

tAV [sec]