KSP2222A

KSP2222A
General Purpose Transistor
Collector-Emitter Voltage: VCEO= 40V Collector Power Dissipation: PC (max)=625mW Refer KSP2222 for graphs
1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 75 40 6 600 625 150 -55 ~ 150 Units V V V mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=60V, IE=0 VEB=3V, IC=0 IC=0.1mA, VCE=10V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, *IC=150mA VCE=10V, *IC=500mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=20V, IC=20mA f=100MHz VCB=10V, IE=0, f=1MHz VCC=30V, IC=150mA IB1=15mA, VBE(off)=0.5V VCC=30V, IC=150mA IB1=IB2=15mA IC=100A, VCE=10V RS=IK, f=1KHz 300 8 35 285 4 0.6 35 50 75 100 40 Min. 75 40 6 0.01 10 Typ. Max. Units V V V A nA

300 0.3 1 1.2 2 V V V V MHz pF ns ns dB

VCE (sat) VBE (sat) fT Cob tON tOFF NF

* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time Noise Figure

* Pulse Test: Pulse Width300s, Duty Cycle2% * Also available as and PN2222A

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSP2222A

Package Demensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3

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