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Tri Gate Transistors
Tri Gate Transistors
TRIGATE TRANSISTOR
INTRODUCTION
Transistors
Microscopic, silicon-based switches
HISTORY
1950s- planar transistors acted as the basic building block of microprocessors. 2002 -Intel developed the worlds first CMOS tri-gate transistors. Performance improved by integrating the tri-gate design with silicon process technology
Tri- gate transistors are expected to replace the nanometer transistors in the Intel microprocessors by 2012
ARCHITECTURE
Built on an ultra-thin layer of fully depleted silicon
Raised source and drain structure Compatible with the future introduction of a high K gate dielectric Show excellent DIBL Thickness requirement of the Si layer is also relaxed by about 2-3 times
ARCHITECTURE
MOORES LAW
Moore's law describes a long-term trend in the history of computing hardware, in which the number of transistors that can be placed inexpensively on an integrated circuit has doubled approximately every two years.Moore's law 21st centuries precisely describes a driving force of technological and social change in the late 20th and early.
FABRICATION
FABRICATION DIAGRAMS
Show excellent control of short channel effects (SCE) Higher performance, in terms of drive current
ADVANTAGES
Lower leakage and consume much less power.
Faster & cooler operation. 45% increase in speed or 50x reduction in offcurrent. The basic building blocks for future microprocessors.
Moore's Law scaling can be taken well into the next decade .
APPLICATIONS
Critical part of INTEL's energy efficient performance Scaling of silicon transistors Increase battery life of mobile devices
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QUESTIONS & QUERIES