You are on page 1of 3

BC556,A,B,C BC557,A,B,C BC558,A,B,C

PNP Silicon Planar Epitaxial Transistors

TO-92 SMD Package

Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC556 DESCRIPTION VCEO 65 Collector Emitter Voltage VCES Collector Emmitter Voltage 80 VCBO Collector Base Voltage 80 VEBO 5 Emitter Base Voltage IC Collector Current Continuous ICM Peak IEM Emitter Current - Peak IBM Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature Thermal Resistance From junction to ambient Ptot Tstg Tj Rth(j-a)

BC557 45 50 50 5 100 200 200 200 500 -55 to +150 150 250

BC558 30 30 30 5

UNITS V V V V mA mA mA mW
o o

C C

C/W

www.rectron.com

1 of 3

BC556,A,B,C BC557,A,B,C BC558,A,B,C

Electrical Characteristics (Ta=25 oC unless otherwise specified) SYMBOL TEST CONDITION DESCRIPTION IC = 2mA, IB = 0 Collector Emitter Voltage VCEO
BC556 BC557 BC558 BC556 BC557 BC558

MIN TYP MAX


65 45 30 80 50 30 5 15 4
0.20 0.20 0.20

UNITS V

Collector Base Voltage

VCBO

IC = 100uA, IE = 0

V V nA uA nA nA nA uA uA uA V V V

Emitter Base Voltage Collector Cut off Current Collector Cut off Current
BC556 BC557 BC558 BC556 BC557 BC558

VEBO ICBO ICES

IE = 100uA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VCE = 80V VCE = 50V VCE = 30V VCE = 80V, Tj = 125 oC VCE = 50V, Tj = 125 oC VCE = 30V, Tj = 125 oC IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, IB = 0.5mA IC = 100mA, I B = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, I B = 5mA VCE = 5V, IC = 10uA
A B C

Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain

VBE(on) VCE(Sat) VBE(Sat) hFE

0.55

0.66 0.09 0.25 0.70 0.90 90 150 270

15 15 15 4 4 4 0.70 0.82 0.30 0.65

VCE = 5V, IC = 2mA


BC556 BC557/BC558 A B C

75 75 110 200 420

180 290 500 120 200 400

475 800 220 450 800

VCE = 5V, IC = 100mA


A B C

www.rectron.com

2 of 3

BC556,A,B,C BC557,A,B,C BC558,A,B,C

Electrical Characteristics (Ta=25 oC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION DYNAMICS CHARACTERISTICS IC = 10mA, V CE = 5V, f = 100MHZ fT Transition Frequency VCB = 10V, f = 1MHZ Ccbo Collector output Capacitance Noise Figure Small Signal Current Gain NF hfe
VCE = 5V, IC = 0.2mA
RS= 2k ohm, f = 1KH Z, B= 200HZ

MIN TYP MAX


150

UNITS MHZ

6
2

10

pF dB

VCE = 5V, IC = 2mA, f= 1kH Z


A B C 220 330 600

Input Impedance

hie

VCE = 5V, IC = 2mA, f= 1kH Z


A B C

1.6 3.2 6.0

2.7 4.5 8.7 1.5 2.0 3.0 18 30 60

4.5 8.5 15

k ohm

Voltage Feedback

hre

VCE = 5V, IC = 2mA, f= 1kH Z


A B C

x10

Output Admittance

hoe

VCE = 5V, IC = 2mA, f= 1kH Z


A B C

30 60 110

u MHO

www.rectron.com

3 of 3

You might also like