2SC1306 Silicon NPN Transistor Final RF Power Output

Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
WINTransceiver

B C E

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)

Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC 3A Continuous Peak 5A Collector Power Dissipation (TA = +25C), PD 1.2W Collector Power Dissipation (TC = +50C), PD 10W Operating Junction Temperature, TJ +150C Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)

Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency Symbol Test Conditions Min Typ Max Unit 80 75 5 25 25 4.0 60 0.9 10 10 200 V V MHz W % 1.2 V V V A A V(BR)CBO IC = 100A, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICBO IEBO hFE VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm

VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT Cob PO VCE = 10V, IC = 0.1A VCB = 10V, f = 1MHz VCC = 12V, Pin = 0.2W, f = 27MHz

0.15 0.60

100 150

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