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Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC
2N6058 2N6059 80 100 80 100 5.0 0.2 12 150 75 -55 to +175 Max. 1.0
Units
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
0
TO-3* (TO-204AA)
*See appendix A for package outline
1) Derate linearly at 1.0 W/0C above TC > +250C ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N6058 2N6059 2N6058 2N6059 2N6058 2N6059 V(BR)CEO 80 100 1.0 1.0 0.5 0.5 2.0 Vdc
ICEO
mAdc
ICEX
mAdc
IEBO
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 3.0 Vdc IC = 6.0 Adc, VCE = 3.0 Vdc IC = 12 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 12 Adc, IB = 120 mAdc IC = 6.0 Adc, IB = 24 mAdc Base-Emitter Saturation Voltage IC = 12 Adc, IB = 120 mAdc Base-Emitter Voltage IC = 6.0 Adc, VCE = 3.0 Vdc 1,000 1,000 150 18,000
hFE
VCE(sat)
Vdc
VBE(sat) VBE
Vdc Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 5.0Adc, VCE = 3.0 Vdc, f = 1.0 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe hfe Cobo 10 1,000 300 pF 250
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc; IB = 20 mAdc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc; IB1 = IB2 = 20 mAdc
t
on
2.0 10
s s
off
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
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