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  • C2060 Datasheet

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    This document provides product specifications for a TO-92L plastic-encapsulated NPN transistor. Key specifications include: 1. It has a maximum power dissipation of 0.75W and low saturation voltage of 0.15V at 500mA. 2. It can operate with temperatures from -55°C to 150°C and has a maximum collector current of 1A and collector power dissipation of 750mW. 3. Electrical characteristics include a DC current gain of 80, collector-emitter saturation voltage of 0.15V at 500mA, and transition frequency of 50-400MHz.

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    C2060 Datasheet

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    This document provides product specifications for a TO-92L plastic-encapsulated NPN transistor. Key specifications include: 1. It has a maximum power dissipation of 0.75W and low saturation voltage of 0.15V at 500mA. 2. It can operate with temperatures from -55°C to 150°C and has a maximum collector current of 1A and collector power dissipation of 750mW. 3. Electrical characteristics include a DC current gain of 80, collector-emitter saturation voltage of 0.15V at 500mA, and transition frequency of 50-400MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    1K views1 page

    C2060 Datasheet

    Uploaded by

    realaffiliate
    This document provides product specifications for a TO-92L plastic-encapsulated NPN transistor. Key specifications include: 1. It has a maximum power dissipation of 0.75W and low saturation voltage of 0.15V at 500mA. 2. It can operate with temperatures from -55°C to 150°C and has a maximum collector current of 1A and collector power dissipation of 750mW. 3. Electrical characteristics include a DC current gain of 80, collector-emitter saturation voltage of 0.15V at 500mA, and transition frequency of 50-400MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Product specification

    TO-92L Plastic-Encapsulate Transistors

    TO-92L

    2SC2060 TRANSISTOR (NPN)

    1. EMITTER

    FEATURE
    2. COLLECTOR

    Power Dissipation PCM: 0.75

    Low Saturation Voltage (VCE(sat)=0.15V at 500mA)

    Complementary Pair with 2SA934

    W (Ta=25)

    3. BASE

    MAXIMUM RATINGS (Ta=25 unless otherwise noted)


    Symbol

    Parameter
    voltage

    Value

    Unit

    40

    VCBO

    Collector-base

    VCEO

    Collector-Emitter Voltage

    32

    VEBO

    Emitter-Base Voltage

    IC

    Collector Current -Continuous

    PC

    Collector Power Dissipation

    750

    mW

    TJ

    Junction Temperature

    150

    Tstg

    Storage Temperature

    -55-150

    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)


    Parameter

    Symbol

    Test

    conditions

    Min

    Max

    Unit

    Collector-base breakdown voltage

    V(BR)CBO

    IC= 100A , IE=0

    40

    Collector-emitter breakdown voltage

    V(BR)CEO

    IC= 1mA , IB=0

    32

    Emitter-base breakdown voltage

    V(BR)EBO

    IE= 100A, IC=0

    Collector cut-off current

    ICBO

    VCB=20V ,

    IE=0

    0.5

    Emitter cut-off current

    IEBO

    VEB=4V ,

    IC=0

    0.1

    hFE

    VCE=3V,

    DC current gain
    Collector-emitter saturation voltage
    Transition frequency
    Collector output capacitance

    http://www.twtysemi.com

    VCE(sat)
    fT
    Cob

    IC= 100mA

    80

    IC= 500m A, IB= 50mA


    VCE=5V,

    IE=-50mA

    0.4
    50

    VCB=10V,IE=0,f=1MHz

    sales@twtysemi.com

    400
    MHz
    30

    4008-318-123

    V
    pF

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