isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

2SB541

DESCRIPTION
Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)
High Power Dissipation: PC= 100W(Max)@TC=25
Complement to Type 2SD388

APPLICATIONS
Designed for audio frequency power amplifier applications.
Suitable for output stage of 40~50 watts audio amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-110

VCEO

Collector-Emitter Voltage

-100

VEBO

Emitter-Base Voltage

-6

IC

Collector Current-Continuous

-8

ICM

Collector Current-Pulse

-12

PC

Collector Power Dissipation

@TC=25

80

TJ

Junction Temperature

150

Tstg

Storage Temperature

-65~150

isc Websitewww.iscsemi.cn

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

2SB541

ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

PARAMETER

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

MAX

UNIT

IC= -5A; IB= -1A

-2.0

Base-Emitter Saturation Voltage

IC= -5A; IB= -1A

-2.0

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1

mA

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

40

hFE-2

DC Current Gain

IC= -4A; VCE= -5V

20

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

Current-GainBandwidth Product

IC= -0.2A; VCE= -10V

fT

hFE-1 Classifications
S

40-80

60-120

100-200

isc Websitewww.iscsemi.cn

CONDITIONS

MIN

TYP.

200

320

pF

MHz