isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

2SB883

DESCRIPTION
High DC Current Gain: hFE = 2000(Min)@ IC= -7A
Wide Area of Safe Operation
Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -7A
Complement to Type 2SD1193

APPLICATIONS
Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

VCEO

Collector-Emitter Voltage

-60

VEBO

Emitter-Base Voltage

-6

IC

Collector Current-Continuous

-15

ICM

Collector Current-Peak

-20

PC

Collector Power Dissipation

TC=25

70

Tj

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

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isc & iscsemi is registered trademark

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

2SB883

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA, RBE=

-60

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -5mA, IE= 0

-70

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -7A, IB= -14mA

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -7A, IB= -14mA

-2.0

ICBO

Collector Cutoff Current

VCB= -40V, IE= 0

-100

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-3

mA

hFE

DC Current Gain

IC= -7A; VCE= -2V

Current-GainBandwidth Product

IC= -7A; VCE= -5V

fT

isc Websitewww.iscsemi.cn

CONDITIONS

MIN

TYP.

MAX

UNIT

2000

20

MHz

isc & iscsemi is registered trademark