isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SA843

DESCRIPTION
Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
DC Current Gain
: hFE= 60-200@ IC= -0.4A
Complement to Type 2SC1683

APPLICATIONS
Audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

VCEO

Collector-Emitter Voltage

-150

VEBO

Emitter-Base Voltage

-5

-0.5

IC

Collector Current-Continuous

ICM

Collector Current-Peak

-2

PC

Total Power Dissipation

@ TC=25

20

TJ

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

isc websitewww.iscsemi.cn

isc & iscsemi is registered trademark

isc Product Specification

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

2SA843

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -5mA; IB= 0

-150

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -0.5mA; IE= 0

-200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -0.5mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -0.4A; VCE= -10V

-1.0

ICBO

Collector Cutoff Current

VCB= -200V; IE= 0

-50

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-50

hFE

DC Current Gain

IC= -0.4A; VCE= -10V

CONDITIONS

MIN

60

TYP.

MAX

UNIT

200

hFE Classifications
P

60-140

85-200

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isc & iscsemi is registered trademark