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  • INCHANGE 2SD2581 High Power Transistor Spec

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    Mariana Torres
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    This document provides the product specification for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581. It has a high breakdown voltage of 1500V minimum and is intended for applications like color TV horizontal deflection output. Key electrical characteristics include a collector-emitter saturation voltage of 5V maximum at 8A collector current and 1.6A base current, and a DC current gain of 20-35 at 1A collector current. The transistor also has a fall time of 0.3 microseconds maximum.

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    This document provides the product specification for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581. It has a high breakdown voltage of 1500V minimum and is intended for applications like color TV horizontal deflection output. Key electrical characteristics include a collector-emitter saturation voltage of 5V maximum at 8A collector current and 1.6A base current, and a DC current gain of 20-35 at 1A collector current. The transistor also has a fall time of 0.3 microseconds maximum.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    8 views3 pages

    INCHANGE 2SD2581 High Power Transistor Spec

    Uploaded by

    Mariana Torres
    This document provides the product specification for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581. It has a high breakdown voltage of 1500V minimum and is intended for applications like color TV horizontal deflection output. Key electrical characteristics include a collector-emitter saturation voltage of 5V maximum at 8A collector current and 1.6A base current, and a DC current gain of 20-35 at 1A collector current. The transistor also has a fall time of 0.3 microseconds maximum.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 3

    INCHANGE Semiconductor

    isc Product Specification

    isc Silicon NPN Power Transistor

    2SD2581

    DESCRIPTION High Breakdown Voltage: VCBO= 1500V (Min) High Switching Speed High Reliability

    APPLICATIONS Color TV horizontal deflection output applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25)


    SYMBOL PARAMETER VALUE UNIT

    VCBO

    Collector-Base Voltage

    1500

    VCEO

    Collector-Emitter Voltage

    800

    VEBO

    Emitter-Base Voltage

    IC

    Collector Current- Continuous

    10

    ICP

    Collector Current-Pulse

    30

    Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25

    3.0 W 70

    TJ

    Junction Temperature

    150

    Tstg

    Storage Temperature Range

    -55~150

    isc Websitewww.iscsemi.cn

    INCHANGE Semiconductor

    isc Product Specification

    isc Silicon NPN Power Transistor


    ELECTRICAL CHARACTERISTICS
    TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

    2SD2581

    TYP.

    MAX

    UNIT

    VCEO(SUS)

    Collector-Emitter Sustaining Voltage

    IC= 100mA; IB= 0

    800

    VCE(sat)

    Collector-Emitter Saturation Voltage

    IC= 8A; IB= 1.6A


    B

    5.0

    VBE(sat)

    Base-Emitter Saturation Voltage

    IC= 8A; IB= 1.6A


    B

    1.5

    ICBO

    Collector Cutoff Current

    VCB= 800V ; IE= 0

    10

    ICES

    Collector Cutoff Current

    VCE= 1500V ; RBE= 0

    1.0

    mA

    IEBO

    Emitter Cutoff Current

    VEB= 4V ; IC= 0

    1.0

    mA

    hFE-1

    DC Current Gain

    IC= 1A ; VCE= 5V

    20

    35

    hFE-2

    DC Current Gain

    IC= 8A ; VCE= 5V IC= 6A , IB1= 1.2A ; IB2= -2.4A PW=20s; Duty Cycle1%

    tf

    Fall Time

    0.3

    isc Websitewww.iscsemi.cn

    INCHANGE Semiconductor

    isc Product Specification

    isc Silicon NPN Power Transistor

    2SD2581

    isc Websitewww.iscsemi.cn

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