SEMICONDUCTOR

MJE13009F

TECHNICAL DATA

TRIPLE DIFFUSED NPN TRANSISTOR

SWITCHING REGULATOR APPLICATION.

HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A
High Collector Voltage : VCBO=700V.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)
SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

700

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

DC

IC

12

Pulse

ICP

24

IB

PC

50

Tj

150

Tstg

-55 150

Collector Current

Base Current
Collector Power Dissipation
(Tc=25

Junction Temperature
Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL
IEBO

Emitter Cut-off Current

TEST CONDITION
VEB=9V, IC=0

MIN.

TYP.

MAX.

UNIT

mA

hFE(1) (Note)

VCE=5V, IC=5A

14

28

hFE(2)

VCE=5V, IC=8A

IC=5A, IB=1A

IC=8A, IB=1.6A

1.5

IC=12A, IB=3A

IC=5A, IB=1A

1.5

IC=8A, IB=1.6A

1.6

VCB=10V, f=0.1MHz, IE=0

180

pF

MHz

1.1

0.7

DC Current Gain

VCE(sat)

Saturation Voltage

Base-Emitter Saturation Voltage

VBE(sat)
Cob

Collector Output Capacitance

Transition Frequency

fT

VCE=10V, IC=0.5A

Turn-On Time

ton

300S

OUTPUT
INPUT

tstg

Storage Time

tf

Note : hFE Classification O:14

2008. 3. 26

I B1

IB1
IB2

Fall Time

15

Collector-Emitter

IB1=I B2 =1.6A
DUTY CYCLE <
= 2%

I B2

VCC =125V

28

Revision No : 6

1/2

MJE13009F

2008. 3. 26

Revision No : 6

2/2