SEMICONDUCTOR

BC327

TECHNICAL DATA

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B

FEATURES
A

High Current : IC=-800mA.

DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA).
For Complementary with NPN type BC337.

N
E

MAXIMUM RATING (Ta=25)

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-45

Emitter-Base Voltage

VEBO

-5

Collector Current

IC

-800

mA

Emitter Current

IE

800

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Tstg

-55150

Storage Temperature Range

H
F

RATING

MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00

SYMBOL

CHARACTERISTIC

DIM
A
B
C
D
E
F
G
H
J
K
L
M
N

1. COLLECTOR
2. BASE
3. EMITTER

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

-100

nA

Collector Cut-off Current

ICBO

VCB=-45V, IE=0

DC Current Gain (Note)

hFE

VCE=-1V, IC=-100mA

100

630

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.7

Base-Emitter Voltage

VBE(ON)

VCE=-1V, IC=-300mA

-1.2

Transition Frequency

fT

VCE=-5V, IC=-10mA, f=100MHz

100

MHz

VCB=-10V, f=1MHz, IE=0

16

pF

Cob

Collector Output Capacitance

Note : hFE Classification none:100630,

2000. 2. 28

16:100250,

Revision No : 2

25:160400,

40:250630

1/2

BC327

-800

CE

-600

3k

-9
-8
-7
-6

=-1

DC CURRENT GAIN h FE

-1k

h FE - I C

-5
-4

-3
-2
I B =-1mA

-400
-200

0
-0.2

COMMON

-0.4

Ta=25 C

-0.8

500
300

Ta=25 C

100

Ta=-25 C

50
30

-1

-3

-10

-30

-100

-300

-1k

COLLECTOR CURRENT I C (mA)

-0.6

-0.4

-0.2

-10

-20

-30

-40

COLLECTOR-EMITTER
VOLTAGE V CE (V)

COMMON EMITTER
Ta=25 C

-1000
-800

-8

-7
-6
-5
-4

-600

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)

-1.0
-0.8

-1200

VCE(sat) - I C
-3

COMMON EMITTER
I C/I B =25

-1
-0.3
-0.1

Ta=25 C

Ta=100 C

-0.03

Ta=-25 C

-0.01
-1

-3

-10

-1

-2

-3

-4

-5

-6

COLLECTOR-EMITTER VOLTAGE V CE (V)

500

30
10

-10
-3
-1
-0.2

-0.4

-0.6

-0.8

BASE-EMITTER VOLTAGE V BE (V)

Revision No : 2

-1.0

COLLECTOR POWER DISSIPATION

PC (mW)

C
=-2
5
Ta

Ta
=2
5 C

C
00
Ta
=1

-30

-3

-10

-30

-100

-300

-1k

COLLECTOR CURRENT I C (mA)

-300
-100

-1k

100

-1

COMMON EMITTER
VCE =-1V

-1k

-300

COMMON EMITTER
Ta=25 C
VCE =-5V

300

I C - V BE
-5k

-100

f T - IC

-2
I B =-1mA

-200

-30

COLLECTOR CURRENT I C (mA)

-3

-400

COLLECTOR CURRENT I C (mA)

Ta=100 C

10

I C -V CE (LOW VOLTAGE REGION)

COLLECTOR CURRENT I C (mA)

1k

VCE =-1V

BASE CURRENT
I B (mA)

2000. 2. 28

COMMON EMITTER
VCE =-1V

EMITTER

-0.6

TRANSITION FREQUENCY
f T (MHz)

BASE-EMITTER
VOLTAGE VBE (V)

COLLECTOR CURRENT
I C (mA)

STATIC CHARACTERISTICS

P C - Ta
700
600
500
400
300
200
100
0
0

25

50

75

100

125

150

175

AMBIENT TEMPERATURE Ta ( C)

2/2

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