SEMICONDUCTOR

TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B

KN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR

FEATURES
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KN2907/2907A.
K D E G N

Low Leakage Current

MAXIMUM RATING (Ta=25

CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range

)
KN2222 KN2222A 60 30 5 600 625 150 -55 150 75 40 6
L

SYMBOL VCBO VCEO VEBO IC PC Tj Tstg

RATING

UNIT V V V mA mW

DIM A B C D E F G H J K L M N

MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00

1. EMITTER 2. BASE 3. COLLECTOR

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KN2222/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KN2222A KN2222 KN2222A KN2222A KN2222 KN2222A KN2222 KN2222A KN2222 KN2222A V(BR)CBO IC=10 A, IE=0 SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 V(BR)CEO IE=10mA, IB=0 30 40 5 6 35 50 75 100 30 40 0.6 250 300 TYP. MAX. 10 10 10 10 300 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 8 MHz pF V V V UNIT nA nA nA V

V(BR)EBO hFE(1)

IE=10 A, IC=0 IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V

KN2222 KN2222A DC Current Gain * KN2222 KN2222A KN2222 Collector-Emitter Saturation Voltage * KN2222A KN2222 KN2222A KN2222 Base-Emitter Saturation Voltage * KN2222A KN2222 KN2222A Transition Frequency Collector Output Capacitance * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. KN2222 KN2222A

hFE(2) hFE(3) hFE(4) hFE(5)

VCE(sat)1

IC=150mA, IB=15mA

VCE(sat)2

IC=500mA, IB=50mA

VBE(sat)1

IC=150mA, IB=15mA

VBE(sat)2

IC=500mA, IB=50mA IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=1.0MHz

fT Cob

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KN2222/A

h FE - IC
1k DC CURRENT GAIN h FE CAPACITANCE C ob (pF) 500 300
VCE =10V

C ob - V CB
12 10 8 6 4 2 0
I E =0 f=1MHz

100 50 30

10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)

10

30

100

200

COLLECTOR-BASE VOLTAGE VCB (V)

V BE(sat) , V CE(sat) - I C
5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
VCE(sat) I C /I B =10

Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C)

10 SATURATION VOLTAGE VBE(sat) ,VCE(sat) (V)

VBE(sat)

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