MPS2222A

New Product

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (NPN)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT2222A.

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Bottom View

Maximum Ratings & Thermal Characteristics

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation TA = 25C Derate above 25C TC = 25C Derate above 25C Symbol VCBO VCEO VEBO IC Ptot Ptot RJA RJC Tj TS

Ratings at 25C ambient temperature unless otherwise specified.

Value 75 40 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150

Unit V V V mA mW mW/C W mW/C C/W C/W C C

Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range

Document Number 88231 10-May-02

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MPS2222A
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter

= 25C unless otherwise noted)

Symbol

Test Condition VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55C VCE = 10 V, IC = 150 mA(1) VCE = 1.0 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) IC = 10 A, IE = 0 IC = 10 mA, IB = 0 IE = 10 A, IC = 0 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 3 V, VCE = 60 V VCB = 60 V, IE = 0 VCB = 50V,IE =0,TA =125C VEB = 3 V, IC = 0 VCE = 60 V, VEB = 3.0 V VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz

Min 35 50 75 35 100 50 40 75 40 6.0 0.6 2.0 0.25 300

Typ

Max 300 0.3 1.0 1.2 2.0 10 0.01 10 100 20 8.0

Unit

DC Current Gain

hFE

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base Cut-off Current
(1)

V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV ICBO IEBO IBL

V V V V V nA A nA nA

Input Impedance

hie

k 1.25 8 10-4 4 10 8.0 25

-4

Voltage Feedback Ratio

hre

Current Gain-Bandwidth Product Output Capacitance Input Capacitance

Note: (1) Pulse test: pulse width 300 s, cycle 2%

fT COBO CIBO

VCE = 20 V, IC = 20 mA f = 100 MHz VCB = 10 V, f = 1 MHz, IE = 0 VEB = 0.5 V, f = 1 MHz, IC = 0

MHz pF pF

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Document Number 88231 10-May-02

MPS2222A
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter

= 25C unless otherwise noted)

Symbol

Test Condition VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz

Min 5.0 25 50 75

Typ

Max 35

Unit S

Output Admittance

hoe

200 300 375 150 4.0 10 25 225 60 ps dB ns ns ns ns

Small Signal Current Gain

hfe

Collector Base Time Constant Noise Figure Delay Time (see Fig. 1) Rise Time (see Fig. 1) Storage Time (see Fig. 2) Fall Time (see Fig. 2)

rbCC NF td tr ts tf

IE = 20 mA, VCB = 20 V, f = 31.8 MHz VCE = 10 V, IC = 100 A, RS = 1 k, f = 1 kHz IB1 = 15 mA, IC = 150 mA VCC = 30 V VBE = 0.5 V IB1 = 15 mA, IC = 150 mA VCC = 30 V VBE = 0.5 V IB1 = IB2 =15 mA, IC =150 mA VCC = 30 V IB1 = IB2 = 1 mA, IC = 10 mA VCC = 30 V

Switching Time Equivalent Test Circuit

Figure 1 - Turn-On Time
1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -2 V < 2 ns 1k C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +30V 200 +16 V 0 -14 V < 20 ns -4 V 1k C S* < 10 pF

Figure 2 - Turn-Off Time

1.0 to 100 s, DUTY CYCLE 2% +30V 200

Document Number 88231 10-May-02

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.