SEME

2N2222A

LAB
MECHANICAL DATA
Dimensions in mm (inches)

HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR

5.84 (0.230)
5.31 (0.209)

12.7 (0.500)
min.

5.33 (0.210)
4.32 (0.170)

4.95 (0.195)
4.52 (0.178)

0.48 (0.019)
0.41 (0.016)
dia.

FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH SPEED SATURATED SWITCHING
ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE

2.54 (0.100)
Nom.

1
2

TO18 METAL PACKAGE

Underside View
PIN 1 Emitter

PIN 2 Base

PIN 3 Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)

VCBO
VCEO
VEBO
IC
PD

Collector Base Voltage

Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Device Dissipation
@ TA = 25C
Derate above 25C

PD

Total Device Dissipation

@ TC = 25C
Derate above 25C
Operating and Storage Junction Temperature Range

TJ , TSTG

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

75V
40V
6V
800mA
0.5mW
2.28mW / C
1.2W
6.85mW / C
65 to +200C
Prelim. 3/96

SEME

2N2222A

LAB
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)CEO

OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage

IC = 10mA

IB = 0

40

V(BR)CBO

Collector Base Breakdown Voltage

IC = 10A

IE = 0

75

V(BR)EBO

Emitter Base Breakdown Voltage

IE = 10A

IC = 0

ICEX

Collector Cut-off Current

VCE = 60V

VEB(off) = 3V

ICBO

Collector Base Cut-off Current

IE = 0

IEBO

Emitter Cut-off Current (IC = 0)

IBL

Base Current

10

nA

VCB = 60V

0.01

TA = 150C

10

IC = 0

VEB = 3V

10

nA

VCE = 60V

VEB(off) = 3V

20

nA

IC = 150mA

IB = 15mA

0.3

IC = 500mA

IB = 50mA

IC = 150mA

IB = 15mA

IC = 500mA

IC = 50mA

IC = 0.1mA

VCE = 10V

35

IC = 1mA

VCE = 10V

50

IC = 10mA

VCE = 10V

75

TA = 55C

35

IC = 150mA

VCE = 10V 1

100

IC = 150mA

VCE = 1V

50

IC = 500mA

VCE = 10V

40

ON CHARACTERISTICS
VCE(sat)1

Collector Emitter Saturation Voltage

VBE(sat)1

Base Emitter Saturation Voltage

hFE

DC Current Gain

0.6

1.2
2

300

fT

SMALL SIGNAL CHARACTERISTICS

Transition Frequency 2
IC = 20mA

VCE = 20V

f = 100MHz

Cob

Output Capacitance

VCB = 10V

IE = 0

f = 100kHz

Cib

Input Capacitance

VEB = 0.5V

IC = 0

f = 100kHz

25

hfe

Small Signal Current Gain

IC = 1mA

VCE = 10V

f = 1kHz

50

300

IC = 10mA

VCE = 10V

f = 1kHz

75

375

td

SWITCHING CHARACTERISTICS
Delay Time
VCC = 30V

VBE(off) = 0.5V

10

tr

Rise Time

IC = 150mA

IB1 = 15mA

25

ts

Storage Time

VCC = 30V

IC = 150mA

225

tf

Fall Time

IB1 = IB2 = 15mA

MHz

300

60

pF

ns
ns

NOTES:
1) Pulse test: tp 300s , 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 3/96